The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices sh...The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices showed the reliability degradation after irradiation,including turn-on voltage Von,on-resistance Ron,ideality factor n,and the reverse leakage current density Jr.In addition,the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×10^(6)-1.3×10^(7)cm^(-1).Latent tracks induced by swift heavy ions were observed visually in the wholeβ-Ga2O3 matrix.Furthermore,crystal structure of tracks was amorphized completely.The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration.Eventually,these defects caused the degradation of electrical characteristics of the devices.In terms of the carrier removal rates,theβ-Ga_(2)O_(3) SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.展开更多
基金the National Natural Science Foundation of China(Grant Nos.12035019,11690041,and 12075290)China National Postdoctoral Program for Innovative Talents(Grant No.BX20200340)+1 种基金China Postdoctoral Science Foundation(Grant No.2020M673539)CAS"Light of West China"Program,and the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS)(Grant No.2020412).
文摘The electrical characteristics and microstructures ofβ-Ga_(2)O_(3) Schottky barrier diode(SBD)devices irradiated with swift heavy ions(2096 MeV Ta ions)have been studied.It was found thatβ-Ga_(2)O_(3) SBD devices showed the reliability degradation after irradiation,including turn-on voltage Von,on-resistance Ron,ideality factor n,and the reverse leakage current density Jr.In addition,the carrier concentration of the drift layer was decreased significantly and the calculated carrier removal rates were 5×10^(6)-1.3×10^(7)cm^(-1).Latent tracks induced by swift heavy ions were observed visually in the wholeβ-Ga2O3 matrix.Furthermore,crystal structure of tracks was amorphized completely.The latent tracks induced by Ta ions bombardments were found to be the reason for the decrease in carrier mobility and carrier concentration.Eventually,these defects caused the degradation of electrical characteristics of the devices.In terms of the carrier removal rates,theβ-Ga_(2)O_(3) SBD devices were more sensitive to swift heavy ions irradiation than SiC and GaN devices.
