The influence of self-heating on the millimeter-wave(mm-wave)and terahertz(THz)performance of double-drift region(DDR)impact avalanche transit time(IMPATT)sources based on silicon(Si)has been investigated in this pape...The influence of self-heating on the millimeter-wave(mm-wave)and terahertz(THz)performance of double-drift region(DDR)impact avalanche transit time(IMPATT)sources based on silicon(Si)has been investigated in this paper.The dependences of static and large-signal parameters on junction temperature are estimated using a non-sinusoidal voltage excited(NSVE)large-signal simulation technique developed by the authors,which is based on the quantum-corrected drift-diffusion(QCDD)model.Linear variations of static parameters and non-linear variations of large-signal parameters with temperature have been observed.Analytical expressions representing the temperature dependences of static and large-signal parameters of the diodes are developed using linear and 2nd degree polynomial curve fitting techniques,which will be highly useful for optimizing the thermal design of the oscillators.Finally,the simulated results are found to be in close agreement with the experimentally measured data.展开更多
Simulation studies are made on the large-signal RF performance and avalanche noise properties ofhet- erojunction double-drift region （DDR） impact avalanche transit time （IMPATT） diodes based on AlxGal-xN/GaN mater...Simulation studies are made on the large-signal RF performance and avalanche noise properties ofhet- erojunction double-drift region （DDR） impact avalanche transit time （IMPATT） diodes based on AlxGal-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al0.4Ga0.6N/p-GaN and n-GaN/p-Al0.4Ga0.6N are proposed in this study. The large-signal output power, con- version efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al0.4Ga0.6N. The results show that the n-Al0.4Ga0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al0.4Ga0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al0.4Ga0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.展开更多
Simulation studies are carried out on the large signal and noise properties of heterojunction（HT）Al_xGa_（1-x）As/GaAs double drift region（DDR） IMPATT devices at V-band（60 GHz）.The dependence of Al mole fraction...Simulation studies are carried out on the large signal and noise properties of heterojunction（HT）Al_xGa_（1-x）As/GaAs double drift region（DDR） IMPATT devices at V-band（60 GHz）.The dependence of Al mole fraction on the aforementioned properties of the device has been investigated.A full simulation software package has been indigenously developed for this purpose.The large signal simulation is based on a non-sinusoidal voltage excitation model.Three mole fractions of Al and two complementary HT DDR structures for each mole fraction i.e.,six DDR structures are considered in this study.The purpose is to discover the most suitable structure and corresponding mole fraction at which high power,high efficiency and low noise are obtained from the device.The noise spectral density and noise measure of all six HT DDR structures are obtained from a noise model and simulation method.Similar studies are carried out on homojunction（HM） DDR GaAs IMPATTs at 60 GHz to compare their RF properties with those of HT DDR devices.The results show that the HT DDR device based on N-Al_xGa_（1-x）As/p-GaAs with 30%mole fraction of Al is the best one so far as large signal power output,DC to RF conversion efficiency and noise level are concerned.展开更多
文摘The influence of self-heating on the millimeter-wave(mm-wave)and terahertz(THz)performance of double-drift region(DDR)impact avalanche transit time(IMPATT)sources based on silicon(Si)has been investigated in this paper.The dependences of static and large-signal parameters on junction temperature are estimated using a non-sinusoidal voltage excited(NSVE)large-signal simulation technique developed by the authors,which is based on the quantum-corrected drift-diffusion(QCDD)model.Linear variations of static parameters and non-linear variations of large-signal parameters with temperature have been observed.Analytical expressions representing the temperature dependences of static and large-signal parameters of the diodes are developed using linear and 2nd degree polynomial curve fitting techniques,which will be highly useful for optimizing the thermal design of the oscillators.Finally,the simulated results are found to be in close agreement with the experimentally measured data.
文摘Simulation studies are made on the large-signal RF performance and avalanche noise properties ofhet- erojunction double-drift region （DDR） impact avalanche transit time （IMPATT） diodes based on AlxGal-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al0.4Ga0.6N/p-GaN and n-GaN/p-Al0.4Ga0.6N are proposed in this study. The large-signal output power, con- version efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al0.4Ga0.6N. The results show that the n-Al0.4Ga0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al0.4Ga0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al0.4Ga0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.
文摘Simulation studies are carried out on the large signal and noise properties of heterojunction（HT）Al_xGa_（1-x）As/GaAs double drift region（DDR） IMPATT devices at V-band（60 GHz）.The dependence of Al mole fraction on the aforementioned properties of the device has been investigated.A full simulation software package has been indigenously developed for this purpose.The large signal simulation is based on a non-sinusoidal voltage excitation model.Three mole fractions of Al and two complementary HT DDR structures for each mole fraction i.e.,six DDR structures are considered in this study.The purpose is to discover the most suitable structure and corresponding mole fraction at which high power,high efficiency and low noise are obtained from the device.The noise spectral density and noise measure of all six HT DDR structures are obtained from a noise model and simulation method.Similar studies are carried out on homojunction（HM） DDR GaAs IMPATTs at 60 GHz to compare their RF properties with those of HT DDR devices.The results show that the HT DDR device based on N-Al_xGa_（1-x）As/p-GaAs with 30%mole fraction of Al is the best one so far as large signal power output,DC to RF conversion efficiency and noise level are concerned.
