In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-...In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) film.Ultrahigh responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were obtained.The detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak signals.Moreover,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of 105.These results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.展开更多
High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power devices.In this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrat...High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power devices.In this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrates was prepared by the mist-CVD method.The growth rate and phase control mechanisms were systematically investigated. The growth rate of the α-Ga_(2)O_(3) films was limited by the evaporation of the microdroplets containing gallium acetylacetonate. By adjusting the substrate position(z) from 80 to 50 mm, the growth rate was increased from 307 nm/h to 1.45 μm/h when the growth temperature was fixed at 520 °C.When the growth temperature exceeded 560 °C, ε-Ga_(2)O_(3) was observed to form at the edges of 2-inch sapphire substrate.Phase control was achieved by adjusting the growth temperature. When the growth temperature was 540 °C and the substrate position was 50 mm, the full-width at half maximum(FWHM) of the rocking curves for the(0006) and(10-14) planes were 0.023° and 1.17°. The screw and edge dislocations were 2.3 × 10~6 and 3.9 × 10~(10)cm~(-2), respectively. Furthermore, the bandgaps and optical transmittance of α-Ga_(2)O_(3) films grown under different conditions were characterized utilizing UV-visible and near-IR scanning spectra.展开更多
This study explores the epitaxial relationship and electrical properties of α-Ga_(2)O_(3) thin films deposited on a-plane, mplane, and r-plane sapphire substrates. We characterize the thin films by X-ray diffraction ...This study explores the epitaxial relationship and electrical properties of α-Ga_(2)O_(3) thin films deposited on a-plane, mplane, and r-plane sapphire substrates. We characterize the thin films by X-ray diffraction and Raman spectroscopy, and elucidate thin film epitaxial relationships with the underlying sapphire substrates. The oxygen vacancy concentration of α-Ga_(2)O_(3) thin films on m-plane and r-plane sapphire substrates are higher than α-Ga_(2)O_(3) thin film on a-plane sapphire substrates. All three thin films have a high transmission of over 80% in the visible and near-ultraviolet regions, and their optical bandgaps stay around 5.02–5.16 eV. Hall measurements show that the α-Ga_(2)O_(3) thin film grown on r-plane sapphire has the highest conductivity of 2.71 S/cm, which is at least 90 times higher than the film on a-plane sapphire. A similar orientation-dependence is seen in their activation energy as revealed by temperature-dependent conductivity measurements, with 0.266, 0.079, and 0.075eV for the film on a-, m-, r-plane, respectively. The origin of the distinct transport behavior of films on differently oriented substrates is suggested to relate with the distinct evolution of oxygen vacancies at differently oriented substrates. This study provides insights for the substrate selection when growing α-Ga_(2)O_(3) films with tunable transport properties.展开更多
Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth ...Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy.展开更多
The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this study.The electrical properties of both P-GaN and N-GaN,separated fro...The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this study.The electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental analysis.It was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line model.Specifically,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased significantly.Additionally,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin film.The effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.展开更多
Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron s...Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga_(2)O_(3) films changed from amorphous to β-Ga_(2)O_(3) after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm.The β-Ga_(2)O_(3) had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm.The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga_(2)O_(3) thin film annealed in N_2 has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA,the photo dark current ratio is 1.7 × 10~6, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10~3%, the specific detection rate is 2.61 × 10~(12) Jones, the response time and recovery time are 378 and 90 ms, respectively.展开更多
We investigated the influence of the growth temperature, O_(2) flow, molar ratio between Ga_(2)O_(3) powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire(0001) substrat...We investigated the influence of the growth temperature, O_(2) flow, molar ratio between Ga_(2)O_(3) powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire(0001) substrates by a carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga_(2)O_(3) illustrate that β-Ga_(2)O_(3) growth by the carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050 °C. The fastest growth rate of β-Ga_(2)O_(3) films was produced when the O_(2) flow was 20 sccm. To guarantee that β-Ga_(2)O_(3) films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga_(2)O_(3) powder should be set at 10 : 1.展开更多
基金This work was supported by the National Key Research and Development Program of China(Grant No.2020YFB2206103)。
文摘In this work,a two-step metal organic chemical vapor deposition(MOCVD)method was applied for growingβ-Ga_(2)O_(3) film on c-plane sapphire.Optimized buffer layer growth temperature(T_(B))was found at 700℃ and theβ-Ga_(2)O_(3) film with full width at half maximum(FWHM)of 0.66°was achieved.A metal−semiconductor−metal(MSM)solar-blind photodetector(PD)was fabricated based on theβ-Ga_(2)O_(3) film.Ultrahigh responsivity of 1422 A/W@254 nm and photo-to-dark current ratio(PDCR)of 10^(6) at 10 V bias were obtained.The detectivity of 2.5×10^(15) Jones proved that the photodetector has outstanding performance in detecting weak signals.Moreover,the photodetector exhibited superior wavelength selectivity with rejection ratio(R_(250 nm)/R_(400 nm))of 105.These results indicate that the two-step method is a promising approach for preparation of high-qualityβ-Ga_(2)O_(3)films for high-performance solar-blind photodetectors.
基金National Natural Science Foundation of China (Grant Nos. 52002219, 51932004 and 61975098)Key-Area Research and Development Program of Guangdong Province (Grant No. 2020B010174002)+2 种基金Shenzhen Fundamental Research Program (Grant No. JCYJ20210324132014038)Natural Science Foundation of Shandong (Grant No. ZR202105230005)the 111 Project 2.0 (Grant No. BP2018013)。
文摘High thickness uniformity and large-scale films of α-Ga_(2)O_(3) are crucial factors for the development of power devices.In this work, a high-quality 2-inch α-Ga_(2)O_(3) epitaxial film on c-plane sapphire substrates was prepared by the mist-CVD method.The growth rate and phase control mechanisms were systematically investigated. The growth rate of the α-Ga_(2)O_(3) films was limited by the evaporation of the microdroplets containing gallium acetylacetonate. By adjusting the substrate position(z) from 80 to 50 mm, the growth rate was increased from 307 nm/h to 1.45 μm/h when the growth temperature was fixed at 520 °C.When the growth temperature exceeded 560 °C, ε-Ga_(2)O_(3) was observed to form at the edges of 2-inch sapphire substrate.Phase control was achieved by adjusting the growth temperature. When the growth temperature was 540 °C and the substrate position was 50 mm, the full-width at half maximum(FWHM) of the rocking curves for the(0006) and(10-14) planes were 0.023° and 1.17°. The screw and edge dislocations were 2.3 × 10~6 and 3.9 × 10~(10)cm~(-2), respectively. Furthermore, the bandgaps and optical transmittance of α-Ga_(2)O_(3) films grown under different conditions were characterized utilizing UV-visible and near-IR scanning spectra.
基金supported by the Zhejiang Provincial Natural Science Foundation under (Grant No. LZ21F040001)the Pioneer Hundred Talents Program of Chinese Academy of Sciencesthe Ningbo Yongjiang Talent Introduction Programme and the Ningbo Key Scientific and Technological Project (Grant No. 2022Z016)。
文摘This study explores the epitaxial relationship and electrical properties of α-Ga_(2)O_(3) thin films deposited on a-plane, mplane, and r-plane sapphire substrates. We characterize the thin films by X-ray diffraction and Raman spectroscopy, and elucidate thin film epitaxial relationships with the underlying sapphire substrates. The oxygen vacancy concentration of α-Ga_(2)O_(3) thin films on m-plane and r-plane sapphire substrates are higher than α-Ga_(2)O_(3) thin film on a-plane sapphire substrates. All three thin films have a high transmission of over 80% in the visible and near-ultraviolet regions, and their optical bandgaps stay around 5.02–5.16 eV. Hall measurements show that the α-Ga_(2)O_(3) thin film grown on r-plane sapphire has the highest conductivity of 2.71 S/cm, which is at least 90 times higher than the film on a-plane sapphire. A similar orientation-dependence is seen in their activation energy as revealed by temperature-dependent conductivity measurements, with 0.266, 0.079, and 0.075eV for the film on a-, m-, r-plane, respectively. The origin of the distinct transport behavior of films on differently oriented substrates is suggested to relate with the distinct evolution of oxygen vacancies at differently oriented substrates. This study provides insights for the substrate selection when growing α-Ga_(2)O_(3) films with tunable transport properties.
基金supported in part by the National Basic Research Program of China (Grant No. 2021YFB3600202)Key Laboratory Construction Project of Nanchang (Grant No. 2020-NCZDSY-008)Suzhou Science and Technology Foundation (Grant No. SYG202027)。
文摘Homoepitaxial growth of Si-doped β-Ga_(2)O_(3) films on semi-insulating(100) β-Ga_(2)O_(3) substrates by metalorganic chemical vapor deposition(MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in(100) β-Ga_(2)O_(3) films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped β-Ga_(2)O_(3) film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the(400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance–voltage characteristics, the effective net doping concentrations of the films are 5.41 × 10~(15) – 1.74 × 10~(20) cm~(-3). Hall measurements demonstrate a high electron mobility value of 51cm~2/(V·s), corresponding to a carrier concentration of 7.19 × 10~(18) cm~(-3) and a high activation efficiency of up to 61.5%. Transmission line model(TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 × 10~(-4) Ω·cm~2 for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 × 10~(19) cm~(-3), confirming the effective Si doing in the MOCVD epitaxy.
文摘The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this study.The electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental analysis.It was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line model.Specifically,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased significantly.Additionally,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin film.The effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.
基金supported by the National Natural Science Foundation of China (Grant No. 62204203)the Shaanxi Natural Science Basic Research Program (Grant No. 2022JQ-701)。
文摘Sn doping is an effective way to improve the response rate of Ga_(2)O_(3) film based solar-blind detectors. In this paper,Sn-doped Ga_(2)O_(3) films were prepared on a sapphire substrate by radio frequency magnetron sputtering. The films were characterized by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and ultraviolet visible spectroscopy, and the effect of annealing atmosphere on the properties of films was studied. The Ga_(2)O_(3) films changed from amorphous to β-Ga_(2)O_(3) after annealing at 900 °C. The films were composed of micro crystalline particles with a diameter of about 5–20 nm.The β-Ga_(2)O_(3) had high transmittance for wavelengths above 300 nm, and obvious absorption for solar-blind signals at 200–280 nm.The metal semiconductor metal type solar-blind detectors were prepared. The detector based on Sn-doped β-Ga_(2)O_(3) thin film annealed in N_2 has the best response performance to 254 nm light. The photo-current is 10 μA at 20 V, the dark-current is 5.76 pA,the photo dark current ratio is 1.7 × 10~6, the response rate is 12.47 A/W, the external quantum efficiency is 6.09 × 10~3%, the specific detection rate is 2.61 × 10~(12) Jones, the response time and recovery time are 378 and 90 ms, respectively.
基金supported by the National Natural Science Foundation of China under Grant 62104024, Grant 11875097, Grant 12075045, Grant 11975257, Grant 11961141014, and Grant 62074146the Fundamental Research Funds for the Central Universities under Grant DUT19RC (3)074the Natural Science Foundation of Liaoning Province under Grant 2021MS124, Grant 2022020474JH2/1013。
文摘We investigated the influence of the growth temperature, O_(2) flow, molar ratio between Ga_(2)O_(3) powder and graphite powder on the structure and morphology of the films grown on the c-plane sapphire(0001) substrates by a carbothermal reduction method. Experimental results for the heteroepitaxial growth of β-Ga_(2)O_(3) illustrate that β-Ga_(2)O_(3) growth by the carbothermal reduction method can be controlled. The optimal result was obtained at a growth temperature of 1050 °C. The fastest growth rate of β-Ga_(2)O_(3) films was produced when the O_(2) flow was 20 sccm. To guarantee that β-Ga_(2)O_(3) films with both high-quality crystal and morphology properties, the ideal molar ratio between graphite powder and Ga_(2)O_(3) powder should be set at 10 : 1.
