针对COB-LED(Chip on Board-Light Emitting Diode)散热问题,文中基于二维热传导方程建立了一个可快速计算COB-LED散热器表面热分布的数学模型。为了便于模型求解,采用有限差分法求解该数学模型并选择交替方向隐格式作为其差分格式。根...针对COB-LED(Chip on Board-Light Emitting Diode)散热问题,文中基于二维热传导方程建立了一个可快速计算COB-LED散热器表面热分布的数学模型。为了便于模型求解,采用有限差分法求解该数学模型并选择交替方向隐格式作为其差分格式。根据模型中的边界条件和初始条件设计COB-LED常温点亮实验,并基于ANSYS有限元分析软件进行仿真分析。通过比较求解结果、仿真结果和实验结果验证该数学模型的合理性。结果表明,求解结果与实验结果中最高温度相对误差约23.57%,且两者的温度变化趋势一致。求解结果与仿真结果中最高温度相对误差约34.84%,且温度分布较为接近,证明了该数学模型的合理性与正确性。展开更多
240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge ef...240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.展开更多
基金Supported by the National Natural Science Foundation of China(NSFC)(62174166,11991063,U2241219)Shanghai Municipal Science and Technology Major Project(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB43010200)。
基金Supported by the National Natural Science Foundation of China(NSFC)(62174166,11991063,U2241219)Shanghai Municipal Science and Technology Major Project(2019SHZDZX01,22JC1402902)the Strategic Priority Research Program of Chinese Academy of Sciences(XDB43010200)。
文摘针对COB-LED(Chip on Board-Light Emitting Diode)散热问题,文中基于二维热传导方程建立了一个可快速计算COB-LED散热器表面热分布的数学模型。为了便于模型求解,采用有限差分法求解该数学模型并选择交替方向隐格式作为其差分格式。根据模型中的边界条件和初始条件设计COB-LED常温点亮实验,并基于ANSYS有限元分析软件进行仿真分析。通过比较求解结果、仿真结果和实验结果验证该数学模型的合理性。结果表明,求解结果与实验结果中最高温度相对误差约23.57%,且两者的温度变化趋势一致。求解结果与仿真结果中最高温度相对误差约34.84%,且温度分布较为接近,证明了该数学模型的合理性与正确性。
基金Key Discipline of Materials Science and Engineering,Bureau of Education of Guangzhou (No. 202255464)“2+5” Significant Academic Hubs and Platforms of Guangzhou University (PT252022016)。
基金This work was supported by National Key R&D Program of China(2022YFB3605103)the National Natural Science Foundation of China(62204241,U22A2084,62121005,and 61827813)+3 种基金the Natural Science Foundation of Jilin Province(20230101345JC,20230101360JC,and 20230101107JC)the Youth Innovation Promotion Association of CAS(2023223)the Young Elite Scientist Sponsorship Program By CAST(YESS20200182)the CAS Talents Program(E30122E4M0).
文摘240 nm AlGaN-based micro-LEDs with different sizes are designed and fabricated.Then,the external quantum efficiency(EQE)and light extraction efficiency(LEE)are systematically investigated by comparing size and edge effects.Here,it is revealed that the peak optical output power increases by 81.83%with the size shrinking from 50.0 to 25.0μm.Thereinto,the LEE increases by 26.21%and the LEE enhancement mainly comes from the sidewall light extraction.Most notably,transversemagnetic(TM)mode light intensifies faster as the size shrinks due to the tilted mesa side-wall and Al reflector design.However,when it turns to 12.5μm sized micro-LEDs,the output power is lower than 25.0μm sized ones.The underlying mechanism is that even though protected by SiO2 passivation,the edge effect which leads to current leakage and Shockley-Read-Hall(SRH)recombination deteriorates rapidly with the size further shrinking.Moreover,the ratio of the p-contact area to mesa area is much lower,which deteriorates the p-type current spreading at the mesa edge.These findings show a role of thumb for the design of high efficiency micro-LEDs with wavelength below 250 nm,which will pave the way for wide applications of deep ultraviolet(DUV)micro-LEDs.
