This article presents an 8-element dual-polarized phased-array transceiver(TRX)front-end IC for millimeter-wave(mm-Wave)5G new radio(NR).Power enhancement technologies for power amplifiers(PA)in mm-Wave 5G phased-arra...This article presents an 8-element dual-polarized phased-array transceiver(TRX)front-end IC for millimeter-wave(mm-Wave)5G new radio(NR).Power enhancement technologies for power amplifiers(PA)in mm-Wave 5G phased-array TRX are discussed.A four-stage wideband high-power class-AB PA with distributed-active-transformer(DAT)power combining and multi-stage second-harmonic traps is proposed,ensuring the mitigated amplitude-to-phase(AM-PM)distortions across wide carrier frequencies without degrading transmitting(TX)power,gain and efficiency.TX and receiving(RX)switching is achieved by a matching network co-designed on-chip T/R switch.In each TRX element,6-bit 360°phase shifting and 6-bit 31.5-dB gain tuning are respectively achieved by the digital-controlled vector-modulated phase shifter(VMPS)and differential attenuator(ATT).Fabricated in 65-nm bulk complementary metal oxide semiconductor(CMOS),the proposed TRX demonstrates the measured peak TX/RX gains of 25.5/21.3 dB,covering the 24−29.5 GHz band.The measured peak TX OP1dB and power-added efficiency(PAE)are 20.8 dBm and 21.1%,respectively.The measured minimum RX NF is 4.1 dB.The TRX achieves an output power of 11.0−12.4 dBm and error vector magnitude(EVM)of 5%with 400-MHz 5G NR FR2 OFDM 64-QAM signals across 24−29.5 GHz,covering 3GPP 5G NR FR2 operating bands of n257,n258,and n261.展开更多
Millimeter-wave systems with high integration level have been rapidly developed to enable modern wireless communication,sensing,and imaging.The millimeter-wave power amplifier(PA)is one of the most challenging and cri...Millimeter-wave systems with high integration level have been rapidly developed to enable modern wireless communication,sensing,and imaging.The millimeter-wave power amplifier(PA)is one of the most challenging and critical components in a millimeter-wave transceiver,it is the last active stage in a transmitter amplifying spectrally efficient complex modulation signal for radiation with high output power.展开更多
南京电子器件研究所首次成功研制了2~18 GHz超宽带大功率固态功率放大器(Solid-state power amplifier,SSPA)。该固态功率放大器以本所研制的0.2μm GaN HEMT超宽带功率MMIC为基础,在2~18 GHz频段内单芯片的输出功率≥16 W,通过采用新...南京电子器件研究所首次成功研制了2~18 GHz超宽带大功率固态功率放大器(Solid-state power amplifier,SSPA)。该固态功率放大器以本所研制的0.2μm GaN HEMT超宽带功率MMIC为基础,在2~18 GHz频段内单芯片的输出功率≥16 W,通过采用新型全空气超宽带高效合成结构,实现了30路高效功率合成。该合成结构相比现有合成技术,具有合成效率更高、散热布局更好的优点。实现的超宽带固态功率放大器饱和输出功率在2~18 GHz频段内大于300 W。展开更多
基金This work was supported in part by the National Key Research and Development Program of China under Grant 2019YFB1803000in part by the Major Key Project of Peng Cheng Laboratory,Shenzhen,China,under Project PCL2021A01-2.
文摘This article presents an 8-element dual-polarized phased-array transceiver(TRX)front-end IC for millimeter-wave(mm-Wave)5G new radio(NR).Power enhancement technologies for power amplifiers(PA)in mm-Wave 5G phased-array TRX are discussed.A four-stage wideband high-power class-AB PA with distributed-active-transformer(DAT)power combining and multi-stage second-harmonic traps is proposed,ensuring the mitigated amplitude-to-phase(AM-PM)distortions across wide carrier frequencies without degrading transmitting(TX)power,gain and efficiency.TX and receiving(RX)switching is achieved by a matching network co-designed on-chip T/R switch.In each TRX element,6-bit 360°phase shifting and 6-bit 31.5-dB gain tuning are respectively achieved by the digital-controlled vector-modulated phase shifter(VMPS)and differential attenuator(ATT).Fabricated in 65-nm bulk complementary metal oxide semiconductor(CMOS),the proposed TRX demonstrates the measured peak TX/RX gains of 25.5/21.3 dB,covering the 24−29.5 GHz band.The measured peak TX OP1dB and power-added efficiency(PAE)are 20.8 dBm and 21.1%,respectively.The measured minimum RX NF is 4.1 dB.The TRX achieves an output power of 11.0−12.4 dBm and error vector magnitude(EVM)of 5%with 400-MHz 5G NR FR2 OFDM 64-QAM signals across 24−29.5 GHz,covering 3GPP 5G NR FR2 operating bands of n257,n258,and n261.
文摘Millimeter-wave systems with high integration level have been rapidly developed to enable modern wireless communication,sensing,and imaging.The millimeter-wave power amplifier(PA)is one of the most challenging and critical components in a millimeter-wave transceiver,it is the last active stage in a transmitter amplifying spectrally efficient complex modulation signal for radiation with high output power.
文摘南京电子器件研究所首次成功研制了2~18 GHz超宽带大功率固态功率放大器(Solid-state power amplifier,SSPA)。该固态功率放大器以本所研制的0.2μm GaN HEMT超宽带功率MMIC为基础,在2~18 GHz频段内单芯片的输出功率≥16 W,通过采用新型全空气超宽带高效合成结构,实现了30路高效功率合成。该合成结构相比现有合成技术,具有合成效率更高、散热布局更好的优点。实现的超宽带固态功率放大器饱和输出功率在2~18 GHz频段内大于300 W。
