[ Objective ]The aim of this study was to discuss the feasibility of breeding cabbage with high Vc by 532 nm laser.[ Method ] With the material of cabbage, the embryo of cabbage seeds was irradiated by frequency doubl...[ Objective ]The aim of this study was to discuss the feasibility of breeding cabbage with high Vc by 532 nm laser.[ Method ] With the material of cabbage, the embryo of cabbage seeds was irradiated by frequency doubled Nd ：YAG laser with different power densities and time, and the effects of laser mode on functional leaf area, chlorophyll and Vc contents in cabbage seedlings were also studied. [Result] The results showed that functional leaf area and chlorophyll content were related to laser power density and time when laser power density was 2 -20 mW/mm^2, while the optimal effect was observed at 14 mW/mm^2 for 1 min. The content of Vc in cabbage seedlings was related to dosage of laser irradiation when irradiating time ranged from 1 to 5 min, and the optimal effect was observed at 2.8 J （20 mW/mm^2, 3 min）. [Conclusion] Irradiating the embryo of cabbage seeds with proper irradiation dosage of 532 nm laser can increase its effect on the Vc content significantly.展开更多
The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradati...The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradations on ir- radiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation （STI）. The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.展开更多
Sulfur hexafluoride （SF6） is known as one of the most powerful greenhouse gases in the atmosphere. Reductive photodegradation of SF6 by styrene has been studied with the purpose of developing a novel remediation for...Sulfur hexafluoride （SF6） is known as one of the most powerful greenhouse gases in the atmosphere. Reductive photodegradation of SF6 by styrene has been studied with the purpose of developing a novel remediation for sulfur hexafluoride pollution. Effects of reaction conditions on the destruction and removal efficiency （DRE） of SF6 are examined in this study. Both initial styrene-to-SF6 ratio and initial oxygen concentration exert a significant influence on DRE. SF6 removal efficiency reaches a maximum value at the initial styrene-to-SF6 ratio of 0.2. It is found that DRE increases with oxygen concentration over the range of 0 to 0.09 mol/m^3 and then decreases with increasing oxygen concentration. When water vapor is fed into the gas mixture, DRE is slightly enhanced over the whole studied time scale. The X-ray Photoelectron Spectroscopy （XPS） analysis, together with gas chromatography-mass spectrometry （GC-MS） and Fourier Transform Infrared spectroscopy （FT-IR） analysis, prove that nearly all the initial fluorine residing in the gas phase is in the form of SiF4, whereas, the initial sulfur is deposited in the form of elemental sulfur, after photodegradation. Free from toxic byproducts, photodegradation in the presence of styrene may serve as a promising technique for SF6 abatement.展开更多
Damage points induced by 355 nm laser irradiation increase more quickly on the surface of fused silica in vacuum of about 10^-3 Pa than in atmospheric air at the same fluence. The larger concentration of point defects...Damage points induced by 355 nm laser irradiation increase more quickly on the surface of fused silica in vacuum of about 10^-3 Pa than in atmospheric air at the same fluence. The larger concentration of point defects in vacuum is confirmed by photoluminescence intensity. X-ray photoelectron spectroscopy and infrared absorption indicate the formation of sub-stoichiometric silica on the surface. The degradation mechanism of fused silica in vacuum is discussed.展开更多
基金Supported by Fund from Jilin Provincial Science & Technology Department(20090541)Project from Department of Education ofJilin Province(200828)~~
文摘[ Objective ]The aim of this study was to discuss the feasibility of breeding cabbage with high Vc by 532 nm laser.[ Method ] With the material of cabbage, the embryo of cabbage seeds was irradiated by frequency doubled Nd ：YAG laser with different power densities and time, and the effects of laser mode on functional leaf area, chlorophyll and Vc contents in cabbage seedlings were also studied. [Result] The results showed that functional leaf area and chlorophyll content were related to laser power density and time when laser power density was 2 -20 mW/mm^2, while the optimal effect was observed at 14 mW/mm^2 for 1 min. The content of Vc in cabbage seedlings was related to dosage of laser irradiation when irradiating time ranged from 1 to 5 min, and the optimal effect was observed at 2.8 J （20 mW/mm^2, 3 min）. [Conclusion] Irradiating the embryo of cabbage seeds with proper irradiation dosage of 532 nm laser can increase its effect on the Vc content significantly.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11475255,U1532261 and 11505282
文摘The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor field- effect transistors （nMOSFETs） is investigated. Experimental results show that hot-carrier degradations on ir- radiated narrow channel nMOSFETs are greater than those without irradiation. The reason is attributed to radiation-induced charge trapping in shallow trench isolation （STI）. The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI, resulting in a more severe hot-carrier effect.
基金This work was supported by the National Natural Science Foundation of China （No. 20177004, 20507004）.
文摘Sulfur hexafluoride （SF6） is known as one of the most powerful greenhouse gases in the atmosphere. Reductive photodegradation of SF6 by styrene has been studied with the purpose of developing a novel remediation for sulfur hexafluoride pollution. Effects of reaction conditions on the destruction and removal efficiency （DRE） of SF6 are examined in this study. Both initial styrene-to-SF6 ratio and initial oxygen concentration exert a significant influence on DRE. SF6 removal efficiency reaches a maximum value at the initial styrene-to-SF6 ratio of 0.2. It is found that DRE increases with oxygen concentration over the range of 0 to 0.09 mol/m^3 and then decreases with increasing oxygen concentration. When water vapor is fed into the gas mixture, DRE is slightly enhanced over the whole studied time scale. The X-ray Photoelectron Spectroscopy （XPS） analysis, together with gas chromatography-mass spectrometry （GC-MS） and Fourier Transform Infrared spectroscopy （FT-IR） analysis, prove that nearly all the initial fluorine residing in the gas phase is in the form of SiF4, whereas, the initial sulfur is deposited in the form of elemental sulfur, after photodegradation. Free from toxic byproducts, photodegradation in the presence of styrene may serve as a promising technique for SF6 abatement.
文摘Damage points induced by 355 nm laser irradiation increase more quickly on the surface of fused silica in vacuum of about 10^-3 Pa than in atmospheric air at the same fluence. The larger concentration of point defects in vacuum is confirmed by photoluminescence intensity. X-ray photoelectron spectroscopy and infrared absorption indicate the formation of sub-stoichiometric silica on the surface. The degradation mechanism of fused silica in vacuum is discussed.
