The characteristics of a blue light-emitting diode （LED） with an AIlnN/GaN superlattice （SL） electron-blocking layer （EBL） are analyzed numerically. The carder concentrations in the quantum wells, energy band di...The characteristics of a blue light-emitting diode （LED） with an AIlnN/GaN superlattice （SL） electron-blocking layer （EBL） are analyzed numerically. The carder concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results suggest that the LED with an AIInN/GaN SL EBL has better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region than the LED with a conventional rectangular AIGaN EBL or a A1GaN/GaN SL EBL. The results also indicate that the efficiency droop is markedly improved when an AlInN/GaN SL EBL is used.展开更多
A model predicting the behavior of various parameters, such as 2DEG sheet charge density and thresh- old voltage, with the variation of barrier thickness and oxide thickness considering interface density of states is ...A model predicting the behavior of various parameters, such as 2DEG sheet charge density and thresh- old voltage, with the variation of barrier thickness and oxide thickness considering interface density of states is presented. The mathematical dependence of these parameters is derived in conjunction with the interface density of states. The dependence of sheet charge density with the barrier thickness and with the oxide thickness is plotted and an insight into the barrier scaling properties of AIInN based MOSHEMTs is presented. The threshold voltage is also plotted with respect to barrier thickness and oxide thickness, which reveals the possibility of the enhance- ment mode operation of the device at low values of the interface DOS. The results are in good agreement with the fabricated device available in the literature.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 61176043)the Special Funds for Provincial Strategic and Emerging Industries Projects of Guangdong, China (Grant Nos. 2010A081002005, 2011A081301003, and 2012A080304016)
文摘The characteristics of a blue light-emitting diode （LED） with an AIlnN/GaN superlattice （SL） electron-blocking layer （EBL） are analyzed numerically. The carder concentrations in the quantum wells, energy band diagrams, electrostatic fields, and internal quantum efficiency are investigated. The results suggest that the LED with an AIInN/GaN SL EBL has better hole injection efficiency, lower electron leakage, and smaller electrostatic fields in the active region than the LED with a conventional rectangular AIGaN EBL or a A1GaN/GaN SL EBL. The results also indicate that the efficiency droop is markedly improved when an AlInN/GaN SL EBL is used.
文摘A model predicting the behavior of various parameters, such as 2DEG sheet charge density and thresh- old voltage, with the variation of barrier thickness and oxide thickness considering interface density of states is presented. The mathematical dependence of these parameters is derived in conjunction with the interface density of states. The dependence of sheet charge density with the barrier thickness and with the oxide thickness is plotted and an insight into the barrier scaling properties of AIInN based MOSHEMTs is presented. The threshold voltage is also plotted with respect to barrier thickness and oxide thickness, which reveals the possibility of the enhance- ment mode operation of the device at low values of the interface DOS. The results are in good agreement with the fabricated device available in the literature.
