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Al掺杂ZnO纳米线阵列紫外光探测器特性
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作者 袁兆林 许庆鹏 +3 位作者 谢志文 何剑锋 游胜玉 汪雪元 《光子学报》 EI CAS CSCD 北大核心 2024年第7期116-124,共9页
采用简便水热法,在具有叉指图案的氟掺杂氧化锡导电玻璃基底上,生长出几种Al掺杂浓度ZnO纳米线阵列,Al/Zn原子比分别为0%(未掺杂)、0.5%、1%、2%和4%。实验结果显示:所有样品均为六方纤锌矿结构,Al掺杂ZnO纳米线沿近似垂直基底表面方向... 采用简便水热法,在具有叉指图案的氟掺杂氧化锡导电玻璃基底上,生长出几种Al掺杂浓度ZnO纳米线阵列,Al/Zn原子比分别为0%(未掺杂)、0.5%、1%、2%和4%。实验结果显示:所有样品均为六方纤锌矿结构,Al掺杂ZnO纳米线沿近似垂直基底表面方向生长,形成良好取向阵列。并且用这些Al掺杂ZnO纳米线阵列作为光敏层,制备了五种紫外光探测器,系统研究了器件性能。经分析,所有器件对365 nm紫外光表现出良好响应。1%Al掺杂ZnO纳米线阵列紫外光探测器具有最佳性能,在365 nm波长处,该探测器响应度、比探测率、灵敏度、外量子效率、响应时间和衰减时间分别为6180 mA/W、1.51×10^(12)Jones、83.2、6090%、4.12 s和14.45 s。该研究证实在ZnO纳米线阵列中进行适量Al掺杂,可有效提高其紫外光探测器性能。 展开更多
关键词 紫外光探测器 氧化锌 al掺杂 掺杂浓度 水热法 光响应
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Design,preparation,and characterization of a novel ZnO/CuO/Al energetic diode with dual functionality:Logic and destruction
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作者 Jialu Yang Jiaheng Hu +3 位作者 Yinghua Ye Jianbing Xu Yan Hu Ruiqi Shen 《Defence Technology(防务技术)》 SCIE EI CAS CSCD 2024年第4期57-68,共12页
Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemi... Self-destructing chips have promising applications for securing data.This paper proposes a new concept of energetic diodes for the first time,which can be used for self-destructive chips.A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode,in which N-type ZnO and P-type CuO are constricted to a PN junction.This paper comprehensively discusses the material properties,morphology,semiconductor characteristics,and exploding performances of the energetic diode.Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3×10^(-4)A.When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s,the loaded power can excite the energetic diode exploding and the current rises to about100 A.Due to the unique performance of the energetic diode,it has a double function of rectification and explosion.The energetic diode can be used as a logic element in the normal chip to complete the regular operation,and it can release energy to destroy the chip accurately. 展开更多
关键词 Energetic diode zno—CuO—al thermite zno/CuO PN junction Electrical explosion performance Self-destructing chips
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Structure distortion, optical and electrical properties of ZnO thin films co-doped with Al and Sb by sol-gel spin coating 被引量:1
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作者 钟文武 刘发民 +3 位作者 蔡鲁刚 周传仓 丁芃 张嬛 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第10期515-519,共5页
ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-r... ZnO thin films co-doped with A1 and Sb with different concentrations and a fixed molar ratio of AlCl3 to SbCl3 at 1:2, are prepared by a sol-gel spin-coating method on glass annealed at 550 ℃ for 2 h in air. The x-ray diffraction results confirm that the ZnO thin films co-doped with Al distortion, and the biaxial stresses are 1.03× 10^8. 3.26× 10^8 and Sb are of wurtzite hexagonal ZnO with a very small 5.23 × 10^8, and 6.97× 10^8 Pa, corresponding to those of the ZnO thin films co-doped with Al and Sb in concentrations of 1.5, 3.0, 4.5, 6.0 at% respectively. The optical properties reveal that the ZnO thin films co-doped with Al and Sb have obviously enhanced transmittance in the visible region. The electrical properties show that ZnO thin film co-doped with Al and Sb in a concentration of 1.5 at% has a lowest resistivity of 2.5 Ω·cm. 展开更多
关键词 zno thin films co-doped with al and Sb sol-gel spin-coating method structure distortion optical and electrical properties
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Structural and Optical Properties of Cu2+ + Ce3+ Co-Doped ZnO by Solution Combustion Method 被引量:3
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作者 S. López-Romero M. J. Quiroz Jiménez M. García-Hipólito 《World Journal of Condensed Matter Physics》 CAS 2016年第4期300-309,共10页
In this work, ZnO, Ce<sup>3+</sup> doped ZnO (ZnO/Ce<sup>3+</sup>) and Cu<sup>2+</sup> + Ce<sup>3+</sup> co-doped ZnO (ZnO/Cu<sup>2+</sup> + Ce<sup>3+&... In this work, ZnO, Ce<sup>3+</sup> doped ZnO (ZnO/Ce<sup>3+</sup>) and Cu<sup>2+</sup> + Ce<sup>3+</sup> co-doped ZnO (ZnO/Cu<sup>2+</sup> + Ce<sup>3+</sup> ) solid solutions powders were synthesized by a solution combustion method maintaining the Ce<sup>3+</sup> ion concentration constant in 3%Wt while the Cu<sup>2+</sup> ion concentration was varied in 1, 2, 3, 10 and 20%Wt. After its synthesis, all the samples were annealed at 900?C by 24 h. The ZnO, ZnO/Ce<sup>3+</sup> and ZnO/Cu<sup>2+</sup> + Ce<sup>3+</sup> powders were structurally characterized using X-ray diffraction (XRD) technique, and the XRD patterns showed that for pure ZnO, Cu<sup>2+</sup> undoped ZnO/Ce<sup>3</sup><sup>+</sup> and ZnO/Ce<sup>3+</sup> doped with the Cu<sup>2+</sup> ion, the three samples exhibited the hexagonal wurtzite ZnO crystalline structure. However, the morphology and particle size of both samples were observed by means of a scanning electron microscopy (SEM);from SEM image, it is observed that the crystallites of both samples are agglomerated forming bigger amorphous particles with an approximate average size of 1 μm. In addition, the photoluminescence of the ZnO, Ce<sup>3+</sup> doped ZnO and Cu<sup>2+</sup> + Ce<sup>3+</sup> doped ZnO samples was measurement under an illumination of 209 nm wavelength (UV region): for the ZnO/Ce<sup>3+</sup> sample, your emission spectrum is in the visible region from blue color until red color;the UV band of the ZnO is suppressed. The multicolor emission visible is attributed to the Ce<sup>3+</sup> ion photoluminescence, while for the ZnO/Cu<sup>2+</sup> + Ce<sup>3+</sup>, its emission PL spectrum is quenching by the Cu<sup>2+</sup> ion, present in the ZnO crystalline. 展开更多
关键词 Structural and Optical Properties of Cu2+ + Ce3+ co-doped zno by Solution Combustion Method
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Structural, ferromagnetic, and optical properties of Fe and Al co-doped ZnO diluted magnetic semiconductor nanoparticles synthesized under high magnetic field
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作者 Muhammad Tariq Ying Li +8 位作者 Wen-Xian Li Zhong-Rui Yu Jia-Mei Li Ye-Min Hu Ming-Yuan Zhu Hong-Ming Jin Yang Liu Yi-Bing Li Katerina Skotnicova 《Advances in Manufacturing》 SCIE CAS CSCD 2019年第2期248-255,共8页
In this study, 2% Fe and 3% Al co-doped ZnO nanoparticles were synthesized using a hydrothermal method under high magnetic field (HMF). The influences of HMF on the structural, optical, and ferromagnetic properties of... In this study, 2% Fe and 3% Al co-doped ZnO nanoparticles were synthesized using a hydrothermal method under high magnetic field (HMF). The influences of HMF on the structural, optical, and ferromagnetic properties of Fe and Al co-doped ZnO nanoparticles were characterized and analyzed. The single-phase wurtzite structure of the synthesized samples was confirmed using X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and Raman spectroscopy analysis. The application of HMF decreases the particle size of the spherical nanocrystal as observed by scanning electron microscopy (SEM). Optical analysis indicated that the absoqjtion edge shifted towards a higher wavelength (red shift). The nanoparticles synthesized under the HMF exhibited high room temperature ferromagnetism (RTFM) performance because of the high oxygen vacancy (VO) content as revealed by X-ray photoelectron spectroscopy (XPS), which was in agreement with the prediction of the bound magnetic polarons theory. 展开更多
关键词 FE and al co-doped zno NANOPARTICLES Room temperature FERROMAGNETISM (RTFM) High magnetic field Hydrothermal OPTICal property
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Influence of reducing anneal on the ferromagnetism in single crystalline Co-doped ZnO thin films
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作者 路忠林 邹文琴 +1 位作者 徐明祥 张凤鸣 《Chinese Physics B》 SCIE EI CAS CSCD 2010年第5期406-411,共6页
This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagn... This paper reports that the high-quality Co-doped ZnO single crystalline films have been grown on a-plane sapphire substrates by using molecular-beam epitaxy. The as-grown films show high resistivity and non-ferromagnetism at room temperature, while they become more conductive and ferromagnetic after annealing in the reducing atmosphere either in the presence or absence of Zn vapour. The x-ray absorption studies indicate that all Co ions in these samples actually substituted into the ZnO lattice without formatting any detectable secondary phase. Compared with weak ferromagnetism (0.16 μB/Co2+) in the Zno.95 Co0.05 O single crystalline film with reducing annealing in the absence of Zn vapour, the films annealed in the reducing atmosphere with Zn vapour are found to have much stronger ferromagnetism (0.65 μB/Co2+) at room temperature. This experimental studies clearly indicate that Zn interstitials are more effective than oxygen vacancies to activate the high-temperature ferromagnetism in Co-doped ZnO films, and the corresponding ferromagnetic mechanism is discussed. 展开更多
关键词 co-doped zno diluted magnetic semiconductors x-ray absorption fine structure single crystalline thin films
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ZnO∶(Al,La)/纤维素气凝胶/涤棉织物红外隐身复合材料的制备及性能 被引量:1
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作者 王益敏 张琳萍 +2 位作者 钟毅 徐红 毛志平 《化工新型材料》 CAS CSCD 北大核心 2023年第3期275-279,共5页
以纤维素纳米纤维(CNF)为原料合成了纤维素凝胶,将纤维素凝胶平铺在涤棉织物上,低温冷冻再高温干燥得到纤维素气凝胶复合涤棉的隔热材料。采用溶胶-凝胶法合成了低发射率掺杂铝、镧的氧化锌粉末[ZnO∶(Al,La)],球磨后制成涂料,粘附在纤... 以纤维素纳米纤维(CNF)为原料合成了纤维素凝胶,将纤维素凝胶平铺在涤棉织物上,低温冷冻再高温干燥得到纤维素气凝胶复合涤棉的隔热材料。采用溶胶-凝胶法合成了低发射率掺杂铝、镧的氧化锌粉末[ZnO∶(Al,La)],球磨后制成涂料,粘附在纤维素气凝胶/涤棉表面形成涂层,得到了低发射率兼具隔热性能的红外隐身复合材料ZnO∶(Al,La)/纤维素气凝胶/涤棉。通过IR-2双波段发射率测试仪研究了不同ZnO∶(Al,La)涂层厚度对复合材料发射率的影响,通过红外热像仪对复合材料的持续隐身性能进行了表征。结果表明:当涂层厚度为400μm时,发射率最低为0.673;纤维素气凝胶厚度为4mm的复合材料可维持90min的红外隐身效果,在红外隐身领域具有广阔的应用前景。 展开更多
关键词 掺铝、镧氧化锌 纤维素气凝胶 隔热 低发射率 红外隐身
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Difference in magnetic properties between Co-doped ZnO powder and thin film 被引量:3
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作者 刘学超 施尔畏 +3 位作者 陈之战 张华伟 张涛 宋力昕 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第6期1770-1775,共6页
This paper reports that the Zn0.95Co0.05O polycrystalline powder and thin film were prepared by sol-gel technique under the similar preparation conditions. The former does not show typical ferromagnetic behaviour, whi... This paper reports that the Zn0.95Co0.05O polycrystalline powder and thin film were prepared by sol-gel technique under the similar preparation conditions. The former does not show typical ferromagnetic behaviour, while the latter exhibits obvious ferromagnetic properties at 5 K and room temperature. The UV-vis spectra and x-ray absorption spectra show that Co2+ ions are homogeneously incorporated into ZnO lattice without forming secondary phases.The distinct difference between film and powder sample is the c-axis (002) preferential orientation indicated by the x-ray diffraction pattern and field emission scanning electron microscopy measurement, which may be the reason why Zn0.95Co0.05O film shows ferromagnetic behaviour. 展开更多
关键词 zno co-doped crystalline orientation MAGNETISM
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Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO 被引量:1
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作者 翁臻臻 张健敏 +1 位作者 黄志高 林文雄 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第2期422-427,共6页
The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations. It is suggested that oxygen vacancy and its location play crucial roles on the magnetic prop... The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations. It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO. The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom. The oxygen vacancy (doping electrons) might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms. 展开更多
关键词 co-doped zno oxygen vacancy FERROMAGNETISM
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Infrared emissivities of Mn,Co co-doped ZnO powders 被引量:1
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作者 姚银华 曹全喜 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第12期263-268,共6页
Infrared emissivities of Zn0.99-xMn0.01CoxO (x = 0.00, 0.01, 0.03, 0.05) powders synthesized at different calcination temperatures by solid-state reaction are investigated. Their phases, morphologies, UV absorption ... Infrared emissivities of Zn0.99-xMn0.01CoxO (x = 0.00, 0.01, 0.03, 0.05) powders synthesized at different calcination temperatures by solid-state reaction are investigated. Their phases, morphologies, UV absorption spectra, and infrared emissivities are studied by XRD, SEM, UV spectrophotometer, and an IR-2 dual-band infrared emissometer in a range of 8 μm-14 μm. Doped ZnO still has a wurtzite structure, and no peaks of other phases originating from impurities are detected. The optical band-gap decreases as the Co content and calcination temperature ascend, and of which the smallest optical band gap is 2.19 eV. The lowest infrared emissivity, 0.754, is observed in Zn0.98Mn0.01Co0.01O with the increase in Co concentration. The infrared emissivity experiences fluctuations as the calcination temperature increases, and its minimum value is 0.762 at 1100 ℃. 展开更多
关键词 co-doped zno optical band gap infrared emissivity solid-state reaction
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Effects of Heat-treatment Temperature on Eu^(3+) and Li^+ Co-doped ZnO Photoluminescence by Sol-gel Process 被引量:1
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作者 卢忠远 HE +5 位作者 Fangfang 许丕池 TENG Yuancheng WANG Bing 《Journal of Wuhan University of Technology(Materials Science)》 SCIE EI CAS 2008年第1期20-23,共4页
The photoluminescence (PL) characteristics of Eu^3+ and Li^+ co-doped ZnO PL materials against heat-treatment temperature were discussed. The PL xerogel and powder samples were prepared by solgel process. The emis... The photoluminescence (PL) characteristics of Eu^3+ and Li^+ co-doped ZnO PL materials against heat-treatment temperature were discussed. The PL xerogel and powder samples were prepared by solgel process. The emission spectra of all samples showed two broad bands peaking at 590 nm and 620 nm under UV-Vis excitation. But the relative intensity of red PL (620 nm) was much greater than that of green PL (590 nm) of the same sample, that s to say, the red color was the main luminescence. With heat-treatment temperature increase, the two kinds of colors PL intensity decreased, and both the red and green PL intensity of the xerogel samples was much greater than those of powder samples respectively. The XRD patterns revealed that Eu^3+ ions were successfully incorporated in ZnO crystals in xerogel samples. When heat-treatment temperature reached 350 ℃, the Eu^3+ began to separate out of the ZnO crystals and Eu2O3 crystals came into being. When the powder sample was subjected to UV-Vis excitation, the energy transfered from the host ZnO emission to Eu^3+ became weaker than the xerogel sample. 展开更多
关键词 PHOTOLUMINESCENCE Eu^3+ and Li^+ co-doped zno UV-Vis excitation xerogel powder
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Room Temperature Ferromagnetismin Co-doped ZnO Bulks
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作者 Long Peng Huai-Wu Zhang +1 位作者 Qi-Ye Wen John Q- Xiao 《Journal of Electronic Science and Technology of China》 2007年第4期293-295,共3页
Pure single phase of Zn0.95Co0.05O bulks were successfully prepared by solid-state reaction method. The effects of annealing atmosphere and temperature on the room temperature ferromagnetic behavior were investigated.... Pure single phase of Zn0.95Co0.05O bulks were successfully prepared by solid-state reaction method. The effects of annealing atmosphere and temperature on the room temperature ferromagnetic behavior were investigated. The results show that the air-annealed samples has similar weak ferromagnetic behavior with the as-sintered samples, but the obvious ferromagnetic behavior is observed for the samples annealed in vacuum or Ar/H2 gas, indicating that the strong ferromagnetism is associated with high oxygen vacancies density. High saturation magnetization Ms=0.73 μB/Co and coercivity Hc=233.8Oe are obtained for the Ar/H2 annealed samples with pure single phase structure when annealing temperature is 600℃. 展开更多
关键词 co-doped zno diluted magnetic semiconductors FERROMAGNETISM spin electronics.
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溶胶-凝胶法制备的ZnO:Al薄膜的微观结构及光学、电学性能 被引量:18
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作者 周宏明 易丹青 +3 位作者 余志明 肖来荣 李荐 王斌 《金属学报》 SCIE EI CAS CSCD 北大核心 2006年第5期505-510,共6页
采用溶胶-凝胶法制备了ZnO:Al(AZO)透明导电薄膜.通过X射线衍射(XRD)、紫外-可见分光光度计 (UV-Vis)、扫描电镜(SEM)和电阻测量装置,考察了Al掺杂量、退火温度及镀膜层数等工艺参数对薄膜的微观结构和光电性能的影响.结果表明,退火... 采用溶胶-凝胶法制备了ZnO:Al(AZO)透明导电薄膜.通过X射线衍射(XRD)、紫外-可见分光光度计 (UV-Vis)、扫描电镜(SEM)和电阻测量装置,考察了Al掺杂量、退火温度及镀膜层数等工艺参数对薄膜的微观结构和光电性能的影响.结果表明,退火温度越高,多晶AZO薄膜的(001)晶面择优取向生长的趋势越强,并且随退火温度升高,薄膜的晶粒尺寸增大,透光率增加.薄膜晶体结构为纯ZnO的六角纤锌矿结构.在掺杂浓度1%(摩尔分数)、退火温度500℃及镀膜层数10的条件下,得到了电阻率为3.2×10-3Ω·cm、可见光区的平均透射率超过90%的AZO薄膜. 展开更多
关键词 zno:al(AZO)薄膜 溶胶-凝胶法 微观结构 光学 电学性能
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透明导电薄膜ZnO:Al(ZAO)的性能及其在有机发光二极管中的应用 被引量:9
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作者 曹鸿涛 裴志亮 +4 位作者 孙超 黄荣芳 闻立时 白峰 邓振波 《金属学报》 SCIE EI CAS CSCD 北大核心 2003年第3期332-336,共5页
研究了ZAO透明导电薄膜的微观组织结构、化学成分及其电学光学特性.结果表明,多晶ZAO薄膜呈柱状晶并具有(002)面择优取向, c轴晶格常数大于0.52000 nm;ZAO薄膜不同微区之问的成分不均匀导致了电学性能的不均匀; ZAO薄膜的电阻率和在可... 研究了ZAO透明导电薄膜的微观组织结构、化学成分及其电学光学特性.结果表明,多晶ZAO薄膜呈柱状晶并具有(002)面择优取向, c轴晶格常数大于0.52000 nm;ZAO薄膜不同微区之问的成分不均匀导致了电学性能的不均匀; ZAO薄膜的电阻率和在可见光区的平均透射率分别为1.39×10-4 Ω·cm和80.8%.其透射率和吸收率曲线均具有明显的波动性,该波动性影响以ZAO为阳极的有机发光二极管的发射光谱,在5.38 A/m2电流密度下二极管的发光效率大于2 cd/A. 展开更多
关键词 zno:al薄膜 电学 光学性能 电致发光 有机发光二极管
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气溶胶辅助化学气相沉积制备Al掺杂ZnO透明导电薄膜 被引量:9
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作者 秦秀娟 韩司慧智 +2 位作者 赵琳 左华通 宋士涛 《无机材料学报》 SCIE EI CAS CSCD 北大核心 2011年第6期607-612,共6页
采用气溶胶辅助化学气相沉积(AACVD)法在玻璃衬底上制备了Al掺杂ZnO(AZO)薄膜.研究了Al掺杂(2at%~8at%)对ZnO薄膜结构及光电性能的影响.利用XRD、SEM、EDAX、紫外可见分光光度计等手段对样品进行测试.结果表明,制备的所有AZO薄膜均具... 采用气溶胶辅助化学气相沉积(AACVD)法在玻璃衬底上制备了Al掺杂ZnO(AZO)薄膜.研究了Al掺杂(2at%~8at%)对ZnO薄膜结构及光电性能的影响.利用XRD、SEM、EDAX、紫外可见分光光度计等手段对样品进行测试.结果表明,制备的所有AZO薄膜均具有纤锌矿结构,不具有沿c轴方向的择优取向,XRD图谱中未观察出Al的相关分相.在可见光范围内,AZO薄膜的平均透过率大于72%,光学禁带宽度随Al掺杂量的增加而变窄.同时根据四探针技术所得的数据得知:Al的掺杂导致薄膜方块电阻的变化,随着Al掺杂量的增加,方块电阻有明显变小的现象,掺杂6at%Al的AZO薄膜具有最低方块电阻(18Ω/□). 展开更多
关键词 气溶胶 化学气相沉积法 al:zno 透明导电薄膜
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孪生对靶直流磁控溅射制备ZnO:Al薄膜及其特性研究 被引量:10
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作者 李微 孙云 +2 位作者 何青 刘芳芳 李凤岩 《人工晶体学报》 EI CAS CSCD 北大核心 2006年第4期761-764,815,共5页
本文以ZnO:A l(ZAO)陶瓷为靶材,采用孪生对靶直流磁控溅射工艺在玻璃衬底上制备出高质量的铝掺杂氧化锌透明导电膜,研究了该薄膜的结构、光电及力学特性。采用孪生对靶制备ZAO薄膜可使样品避开等离子体直接轰击,减少基底薄膜的损伤。制... 本文以ZnO:A l(ZAO)陶瓷为靶材,采用孪生对靶直流磁控溅射工艺在玻璃衬底上制备出高质量的铝掺杂氧化锌透明导电膜,研究了该薄膜的结构、光电及力学特性。采用孪生对靶制备ZAO薄膜可使样品避开等离子体直接轰击,减少基底薄膜的损伤。制备的薄膜具有结晶程度高、电阻率低、迁移率高等优点。ZAO薄膜的最低电阻率达到了4.47×10-4Ω.cm,在可见光区的平均透过率达到85%以上,非常适合做为铜铟硒(C IS)薄膜太阳电池窗口层。 展开更多
关键词 孪生对靶 磁控溅射 zno:al
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背入射Au/ZnO/Al结构肖特基紫外探测器 被引量:13
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作者 赵延民 张吉英 +7 位作者 张希艳 单崇新 姚斌 赵东旭 张振中 李炳辉 申德振 范希武 《发光学报》 EI CAS CSCD 北大核心 2010年第4期527-530,共4页
设计制作了一种Au/ZnO/Al结构的紫外探测器,光的入射方式采用背入射式。ZnO薄膜是用磁控溅射在蓝宝石衬底上制备的。I-V测试表明:Au与ZnO形成了肖特基接触。得到探测器的光响应峰值在352nm,截止边为382nm,可见抑制比达一个量级。由于... 设计制作了一种Au/ZnO/Al结构的紫外探测器,光的入射方式采用背入射式。ZnO薄膜是用磁控溅射在蓝宝石衬底上制备的。I-V测试表明:Au与ZnO形成了肖特基接触。得到探测器的光响应峰值在352nm,截止边为382nm,可见抑制比达一个量级。由于该探测器是一种垂直结构器件,对于进一步实现ZnO紫外探测器阵列及单光子探测有很好的研究价值。 展开更多
关键词 紫外探测器 背入射 Au/zno/al垂直结构
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膜厚对Zr,Al共掺杂ZnO透明导电薄膜结构和光电性能的影响 被引量:12
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作者 袁玉珍 王辉 +2 位作者 张化福 刘汉法 刘云燕 《人工晶体学报》 EI CAS CSCD 北大核心 2010年第1期169-173,共5页
采用直流磁控溅射法在玻璃衬底上制备出Zr,Al共掺杂ZnO(AZZO)透明导电薄膜。用XRD和SEM分析和观察了薄膜样品的组织结构和表面形貌。研究表明:制备的AZZO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。另外还研究了薄膜... 采用直流磁控溅射法在玻璃衬底上制备出Zr,Al共掺杂ZnO(AZZO)透明导电薄膜。用XRD和SEM分析和观察了薄膜样品的组织结构和表面形貌。研究表明:制备的AZZO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。另外还研究了薄膜的结构、光学和电学性质随薄膜厚度的变化关系。当薄膜厚度为843nm时,电阻率具有最小值1.18×10-3Ω.cm,在可见光区(500~800nm)平均透过率超过93%。 展开更多
关键词 磁控溅射 Zr al共掺杂zno 膜厚 透明导电薄膜
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掺Al对ZnO薄膜结构和光电性能的影响 被引量:9
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作者 徐自强 邓宏 +1 位作者 谢娟 李燕 《液晶与显示》 CAS CSCD 北大核心 2005年第6期503-507,共5页
采用溶胶-凝胶工艺在普通玻璃片上制备了ZnO∶Al薄膜。通过XRD、UV透射谱和电学测试等分析方法研究了掺Al对薄膜的组织结构和光电性能的影响。分析表明:所制备的薄膜具有c轴择优取向,随着掺Al浓度的增加,(002)峰向低角度移动,峰强逐渐... 采用溶胶-凝胶工艺在普通玻璃片上制备了ZnO∶Al薄膜。通过XRD、UV透射谱和电学测试等分析方法研究了掺Al对薄膜的组织结构和光电性能的影响。分析表明:所制备的薄膜具有c轴择优取向,随着掺Al浓度的增加,(002)峰向低角度移动,峰强逐渐减弱。薄膜电阻率随掺Al浓度变化,当掺Al浓度为1.5%(摩尔分数),薄膜电阻率降至6.2×10-4Ω·cm。掺Al量的增加同时使得薄膜的禁带宽度变大,光吸收边出现蓝移现象。 展开更多
关键词 zno薄膜 溶胶-凝胶法 al掺杂 光学特性 电学特性
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N-Al共掺ZnO薄膜的p型传导特性 被引量:11
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作者 吕建国 叶志镇 +3 位作者 诸葛飞 曾昱嘉 赵炳辉 朱丽萍 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第4期730-734,共5页
利用直流反应磁控溅射技术制得N Al共掺的p型ZnO薄膜,N2O为生长气氛.利用X射线衍射(XRD),Hall实验,X射线光电子能谱(XPS)和光学透射谱对共掺ZnO薄膜的性能进行研究.结果表明,薄膜中Al的存在显著提高了N的掺杂量,N以N Al键的形式存在.N A... 利用直流反应磁控溅射技术制得N Al共掺的p型ZnO薄膜,N2O为生长气氛.利用X射线衍射(XRD),Hall实验,X射线光电子能谱(XPS)和光学透射谱对共掺ZnO薄膜的性能进行研究.结果表明,薄膜中Al的存在显著提高了N的掺杂量,N以N Al键的形式存在.N Al共掺ZnO薄膜具有优良的p型传导特性.当Al含量为0.15wt%时,共掺ZnO薄膜的电学性能取得最优值,载流子浓度为2.52×1017cm-3,电阻率为57.3Ω·cm,Hall迁移率为0.43cm2/(V·s).N Al共掺p型ZnO薄膜具有高度c轴取向,在可见光区域透射率高达90%. 展开更多
关键词 N—al共掺zno薄膜 P型传导 N2O生长气氛 直流反应磁控溅射
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