Bi 0.5 Sb 1.5 Te 3/polyaniline composites were prepared by mechanical blending and in situ polymerization, and their transport properties were measured. It was found that for the composites with 1%, 3%, 5% and 7% poly...Bi 0.5 Sb 1.5 Te 3/polyaniline composites were prepared by mechanical blending and in situ polymerization, and their transport properties were measured. It was found that for the composites with 1%, 3%, 5% and 7% polyaniline (mass fraction) respectively, which were prepared by mechanical blending, the power factors decrease by about 30%, 50%, 55% and 65% compared with the Bi 0.5 Sb 1.5 Te 3 samples, which is mainly due to the remarkable decreases of the electrical conductivity. The electrical conductivity and power factor of the composites samples with 7% polyaniline prepared by in situ polymerization are higher by about 65% and 60%, respectively, than that of the corresponding samples prepared by mechanical blending.展开更多
Bi_（0.5）Sb_（1.5）Te_3/Cu core/shell powders were prepared by electroless plating and hydrogen reduction, and then sintered into bulk by spark plasma sintering. After electroless plating, with increasing the Cu cont...Bi_（0.5）Sb_（1.5）Te_3/Cu core/shell powders were prepared by electroless plating and hydrogen reduction, and then sintered into bulk by spark plasma sintering. After electroless plating, with increasing the Cu content, the electrical conductivity keeps enhancing significantly. The highest electrical conductivity reaches 3341 S/cm at room temperature in Bi0.5Sb1.5Te3 with 0.67 wt% Cu bulk sample. Moreover, the lowest lattice thermal conductivity reaches 0.32 W/m·K at 572.2 K in Bi0.5Sb1.5Te3 with 0.67 wt% Cu bulk sample, which is caused by the scattering of the rich-copper particles with different dimensions and massive grain boundaries. According to the results, the ZT values of all Bi0.5Sb1.5Te3/Cu bulk samples have improved in a high temperature range. In Bi0.5Sb1.5Te3 with 0.15 wt% Cu bulk sample, the highest ZT value at 573.4 K is 0.81. When the Cu content increases to 0.67 wt%, the highest ZT value reaches 0.85 at 622.2 K. Meanwhile, the microhardness increases with increasing the Cu content.展开更多
For zone-melted （ZM） bismuth telluride-based alloys, which are widely commercially available for solidstate cooling and low-temperature power generation around room temperature, introducing point defects is the chie...For zone-melted （ZM） bismuth telluride-based alloys, which are widely commercially available for solidstate cooling and low-temperature power generation around room temperature, introducing point defects is the chief approach to improve their thermoelectric performance. Herein, we report the multiple effects of Se doping on thermoelectric performance of p-type Bi0.5Sb1,5Te3-xSex ＋ 3 wt% Te ZM ingots, which increases carrier concentration, reduces lattice thermal conductivity and deteriorates the carrier mobility. As a result, the peak figure of merit （ZT） is shifted to a higher temperature and a high ZT 1.2 at 350 K is obtained, due to the reduced thermal conductivity and suppressed intrinsic conduction. Further, decreasing Sb content is followed to optimize the room temperature performance and a ZT - 1.1 at 300 K is obtained. These results are significant for designing and optimizing the thermoelectric performance of commercial Bi0.5Sb1.5Te3＋ 3 wt% Te ZM alloys.展开更多
In this work, micro/nano-structured Bi0.5Sb1.5Te3bulk thermoelectric materials were synthesized by mechanical alloying from elemental shots of Bi, Sb, and Te. Cold pressing and subsequent heat treatments with hydrogen...In this work, micro/nano-structured Bi0.5Sb1.5Te3bulk thermoelectric materials were synthesized by mechanical alloying from elemental shots of Bi, Sb, and Te. Cold pressing and subsequent heat treatments with hydrogen reduction were used to form bulk solid samples with good thermoelectric properties in the temperature range around 75℃to 100℃. In comparison to crystal growth methods and chemical solution synthesis, the reported technique can be readily implemented for mass production with relatively low cost.展开更多
In this paper, PbTe nanocubes are assembled on Bi_(0.5)Sb_(1.5)Te_3 substrates with both ordered and disordered structures through a straightforward method to form a P-N section. The work function of such semiconducto...In this paper, PbTe nanocubes are assembled on Bi_(0.5)Sb_(1.5)Te_3 substrates with both ordered and disordered structures through a straightforward method to form a P-N section. The work function of such semiconductor system is then measured by the ultraviolet photoelectron spectroscopy. This results show that the work function of orderly arrayed PbTe deposition is much lower than the disordered assemblies. Such change of the work function provides the possibility to tune it in a P-N section system. The change of the work function is attributed to the less surface roughness and easier electron escaping in the ordered structures.展开更多
文摘Bi 0.5 Sb 1.5 Te 3/polyaniline composites were prepared by mechanical blending and in situ polymerization, and their transport properties were measured. It was found that for the composites with 1%, 3%, 5% and 7% polyaniline (mass fraction) respectively, which were prepared by mechanical blending, the power factors decrease by about 30%, 50%, 55% and 65% compared with the Bi 0.5 Sb 1.5 Te 3 samples, which is mainly due to the remarkable decreases of the electrical conductivity. The electrical conductivity and power factor of the composites samples with 7% polyaniline prepared by in situ polymerization are higher by about 65% and 60%, respectively, than that of the corresponding samples prepared by mechanical blending.
基金the National Natural Science Foundation of China(No.51371073)
文摘Bi_（0.5）Sb_（1.5）Te_3/Cu core/shell powders were prepared by electroless plating and hydrogen reduction, and then sintered into bulk by spark plasma sintering. After electroless plating, with increasing the Cu content, the electrical conductivity keeps enhancing significantly. The highest electrical conductivity reaches 3341 S/cm at room temperature in Bi0.5Sb1.5Te3 with 0.67 wt% Cu bulk sample. Moreover, the lowest lattice thermal conductivity reaches 0.32 W/m·K at 572.2 K in Bi0.5Sb1.5Te3 with 0.67 wt% Cu bulk sample, which is caused by the scattering of the rich-copper particles with different dimensions and massive grain boundaries. According to the results, the ZT values of all Bi0.5Sb1.5Te3/Cu bulk samples have improved in a high temperature range. In Bi0.5Sb1.5Te3 with 0.15 wt% Cu bulk sample, the highest ZT value at 573.4 K is 0.81. When the Cu content increases to 0.67 wt%, the highest ZT value reaches 0.85 at 622.2 K. Meanwhile, the microhardness increases with increasing the Cu content.
基金National Natural Science Foundation of China(11834012,51620105014,51572210,51521001)National Key Research and Development Plan of China(2018YFB0703600)
基金supported by the National Natural Science Foundation of China (Nos. 61534001 and 11574267)the National Science Fund for Distinguished Young Scholars (No.51725102)
文摘For zone-melted （ZM） bismuth telluride-based alloys, which are widely commercially available for solidstate cooling and low-temperature power generation around room temperature, introducing point defects is the chief approach to improve their thermoelectric performance. Herein, we report the multiple effects of Se doping on thermoelectric performance of p-type Bi0.5Sb1,5Te3-xSex ＋ 3 wt% Te ZM ingots, which increases carrier concentration, reduces lattice thermal conductivity and deteriorates the carrier mobility. As a result, the peak figure of merit （ZT） is shifted to a higher temperature and a high ZT 1.2 at 350 K is obtained, due to the reduced thermal conductivity and suppressed intrinsic conduction. Further, decreasing Sb content is followed to optimize the room temperature performance and a ZT - 1.1 at 300 K is obtained. These results are significant for designing and optimizing the thermoelectric performance of commercial Bi0.5Sb1.5Te3＋ 3 wt% Te ZM alloys.
文摘In this work, micro/nano-structured Bi0.5Sb1.5Te3bulk thermoelectric materials were synthesized by mechanical alloying from elemental shots of Bi, Sb, and Te. Cold pressing and subsequent heat treatments with hydrogen reduction were used to form bulk solid samples with good thermoelectric properties in the temperature range around 75℃to 100℃. In comparison to crystal growth methods and chemical solution synthesis, the reported technique can be readily implemented for mass production with relatively low cost.
基金supported by the 1000 Young Talents Programthe National Natural Science Foundation of China (21422507, 21321003, 215032337)Institute of Chemistry, Chinese Academy of Sciences
文摘In this paper, PbTe nanocubes are assembled on Bi_(0.5)Sb_(1.5)Te_3 substrates with both ordered and disordered structures through a straightforward method to form a P-N section. The work function of such semiconductor system is then measured by the ultraviolet photoelectron spectroscopy. This results show that the work function of orderly arrayed PbTe deposition is much lower than the disordered assemblies. Such change of the work function provides the possibility to tune it in a P-N section system. The change of the work function is attributed to the less surface roughness and easier electron escaping in the ordered structures.
