A 3-dimensional(3D)micromagnetic model combined with Fast Fourier Transform(FFT)method was built up to study the writability in the L1_(0)FePt perpendicular medium.The effects of controllable grain size distributions ...A 3-dimensional(3D)micromagnetic model combined with Fast Fourier Transform(FFT)method was built up to study the writability in the L1_(0)FePt perpendicular medium.The effects of controllable grain size distributions were studied by grain growth simulation.It is found that the cross-track-averaged magnetization changes little between the L1_(0)FePt medium with uniform or non-uniform grain size distribution.展开更多
We study the high order equilibrium distributions of a counting random variable. Properties such as moments, the probability generating function, the stop--loss transform and the mean residual lifetime, are derived. E...We study the high order equilibrium distributions of a counting random variable. Properties such as moments, the probability generating function, the stop--loss transform and the mean residual lifetime, are derived. Expressions are obtained for higher order equilibrium distribution functions under mixtures and convolutions of a counting distribution. Recursive formulas for higher order equilibrium distribution functions of the (a,b,0) -family of distributions are given.展开更多
For a better understanding of the deposition mechanism of thin films in SiCl4 source gas, we have measured the spatial distributions of SiCln （n=0-2） radicals in SICl4 radio frequency glow discharge plasma utilizing...For a better understanding of the deposition mechanism of thin films in SiCl4 source gas, we have measured the spatial distributions of SiCln （n=0-2） radicals in SICl4 radio frequency glow discharge plasma utilizing a mass spectrometer equipped with a movable gas sampling apparatus. The experimental results demonstrate that the relative densities of SiCln （n=0-2） radicals have peak values at the position of 10 mm above the powered electrode along the axial direction; the relative densities of the Si and SiCIn （n=1, 2） radicals have peak values at the positions of 27mm and 7 mm away from the axis along the radial direction, respectively. Generally speaking, in the whole SICl4 plasma bulk region, the relative density of Si is one order of magnitude higher than that of SICl, and the relative density of SiCl is several times higher than that of SICl2. This reveals that Si and SiCl may be the primary growth precursors in forming thin films.展开更多
文摘A 3-dimensional(3D)micromagnetic model combined with Fast Fourier Transform(FFT)method was built up to study the writability in the L1_(0)FePt perpendicular medium.The effects of controllable grain size distributions were studied by grain growth simulation.It is found that the cross-track-averaged magnetization changes little between the L1_(0)FePt medium with uniform or non-uniform grain size distribution.
文摘We study the high order equilibrium distributions of a counting random variable. Properties such as moments, the probability generating function, the stop--loss transform and the mean residual lifetime, are derived. Expressions are obtained for higher order equilibrium distribution functions under mixtures and convolutions of a counting distribution. Recursive formulas for higher order equilibrium distribution functions of the (a,b,0) -family of distributions are given.
文摘For a better understanding of the deposition mechanism of thin films in SiCl4 source gas, we have measured the spatial distributions of SiCln （n=0-2） radicals in SICl4 radio frequency glow discharge plasma utilizing a mass spectrometer equipped with a movable gas sampling apparatus. The experimental results demonstrate that the relative densities of SiCln （n=0-2） radicals have peak values at the position of 10 mm above the powered electrode along the axial direction; the relative densities of the Si and SiCIn （n=1, 2） radicals have peak values at the positions of 27mm and 7 mm away from the axis along the radial direction, respectively. Generally speaking, in the whole SICl4 plasma bulk region, the relative density of Si is one order of magnitude higher than that of SICl, and the relative density of SiCl is several times higher than that of SICl2. This reveals that Si and SiCl may be the primary growth precursors in forming thin films.
