In the present study,a simple method for the preparation of a luminescent flexible gallium doped zinc oxide(GZO)/polystyrene nanocomposite film was developed.The prepared GZO powder was characterized through different...In the present study,a simple method for the preparation of a luminescent flexible gallium doped zinc oxide(GZO)/polystyrene nanocomposite film was developed.The prepared GZO powder was characterized through different optical and structural techniques.The XRD study revealed the existence of a wurtzite structure with no extra oxide peaks.Elemental-mapping,EDX,FTIR and XPS analyses were used to confirm the presence of elements and the several groups present in the structure.Under excitations of UV,the prepared hybrid nanocomposite showed a strong cyan emission with narrow full width at half the maximum value(20 nm)that has not been reported before.X-ray and laser-induced luminescence results of the hy-brid film revealed novel blue-green emission at room temperature.The prepared composite film showed a strong scintillation re-sponse to ionizing radiation.The strong emissions,very weak deep-level emissions,and low FWHM of composite indicate the de-sirable optical properties with low-density structural defects in the GZO composite structure.Therefore,the prepared hybrid film can be considered to be a suitable candidate for the fabrication of optoelectronic devices.展开更多
Ga doped ZnO （GZO）/Cu grid double layer structures were prepared at room temperature （RT）. We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid sp...Ga doped ZnO （GZO）/Cu grid double layer structures were prepared at room temperature （RT）. We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit （ФTC = 6.19 × 10^-3 Ω^-1） was obtained. In this case, the transmittance, resistivity and filling factor （FF） of the GZO/Cu grid double layer are 83.74%, 1.10 ×10^-4Ω.cm and 0.173, respectively.展开更多
Ga doped ZnO （OZO）/Cu grid/GZO transparent conductive electrode （TCE） structures were fabricated at room temperature （RT） by using electron beam evaporation （EBE） for the Cu grids and RF magnetron sputtering f...Ga doped ZnO （OZO）/Cu grid/GZO transparent conductive electrode （TCE） structures were fabricated at room temperature （RT） by using electron beam evaporation （EBE） for the Cu grids and RF magnetron sputtering for the GZO layers. In this work, we investigated the electrical and optical characteristics of GZO/Cu grid/GZO multilayer electrode for thin film solar cells by using evaporated Cu grid and sputtered GZO thin films to enhance the optical transparency without significantly affecting their conductivity. The optical transmittance and sheet resistance of GZO/Cu grid/GZO multilayer are higher than those of GZO/Cu film/GZO multilayer independent of Cu grid separation distance and increase with increasing Cu grid separation distances. The calculation of both transmittance and sheet resistance of GZO/Cu grid] GZO multilayer was based on Cu filling factor correlated with the geometry of Cu grid. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid/GZO multilayer were similar to the experimentally observed ones. The highest figure of merit ФTc is 5.18× 10^-3Ω^-1 for the GZO/Cu grid] GZO multilayer with Cu grid separation distance of 1 mm was obtained, in this case, the transmittance and resistivity were 82.72% and 2.17 × 10 ^-4Ωcm, respectively. The transmittance and resistivity are accentahle for nractical thin film snlar cell annlicatinn~展开更多
High quality epitaxial single phase（Ga_（0.96）Mn_（0.04））_2O_3 and Ga_2O_3 thin films have been prepared on sapphire substrates by using laser molecular b（eam）epitaxy（L-MBE）. X-ray diffraction results indicate...High quality epitaxial single phase（Ga_（0.96）Mn_（0.04））_2O_3 and Ga_2O_3 thin films have been prepared on sapphire substrates by using laser molecular b（eam）epitaxy（L-MBE）. X-ray diffraction results indicate that the thin films have the monoclinic structure with a 201 preferable orientation. Room temperature（RT） ferromagnetism appears and the magnetic properties of β-（Ga_（0.96）Mn_（0.04））_2O_3 thin film are enhanced compared with our previous works. Experiments as well as the first principle method are used to explain the role of Mn dopant on the structure and magnetic properties of the thin films. The ferromagnetic properties are explained based on the concentration of transition element and the defects in the thin films.展开更多
The structural properties, band structures and densities of states of Sn-doped Ga1.375In0.625O3 with a Sn atom substituting for the Ga atom or a Sn atom substituting for the In atom are calculated by using the firstpr...The structural properties, band structures and densities of states of Sn-doped Ga1.375In0.625O3 with a Sn atom substituting for the Ga atom or a Sn atom substituting for the In atom are calculated by using the firstprinciples method. The substitution of the Sn atom for the Ga atom in Ga1.375In0.625O3（Ga1.25In0.625Sn0.125O3/has larger lattice parameters and stronger Sn–O ionic bonds than that of the substitutional doping of the Sn atom for the In atom in Ga1.375In0.625O3（Ga1.375In0.5Sn0.125O3/. Results show that the Sn atom is preferentially substituted for the In atom in Sn-doped Ga1.375In0.625O3. Sn-doped Ga1.375In0.625O3 exhibits n-type metallic conductivity,and the impurity bands are mainly provided by the Sn 5s states. The optical band gap of Ga1.375In0.5Sn0.125O3is larger than that of Ga1.25In0.625Sn0.125O3. Ga1.25In0.625Sn0.125O3 has a smaller electron effective mass and a slightly larger mobility. However, Ga1.375In0.5Sn0.125O3 has a larger relative electron number and a slightly higher conductivity.展开更多
基金the Iranian National Elites Foundation for the financial support of this research
文摘In the present study,a simple method for the preparation of a luminescent flexible gallium doped zinc oxide(GZO)/polystyrene nanocomposite film was developed.The prepared GZO powder was characterized through different optical and structural techniques.The XRD study revealed the existence of a wurtzite structure with no extra oxide peaks.Elemental-mapping,EDX,FTIR and XPS analyses were used to confirm the presence of elements and the several groups present in the structure.Under excitations of UV,the prepared hybrid nanocomposite showed a strong cyan emission with narrow full width at half the maximum value(20 nm)that has not been reported before.X-ray and laser-induced luminescence results of the hy-brid film revealed novel blue-green emission at room temperature.The prepared composite film showed a strong scintillation re-sponse to ionizing radiation.The strong emissions,very weak deep-level emissions,and low FWHM of composite indicate the de-sirable optical properties with low-density structural defects in the GZO composite structure.Therefore,the prepared hybrid film can be considered to be a suitable candidate for the fabrication of optoelectronic devices.
基金supported by the Key Project of the National Natural Science Foundation of China(No.91333203)the Program for Innovative Research Team in University of Ministry of Education of China(No.IRT13037)+1 种基金the National Natural Science Foundation of China(No.51172204)the Zhejiang Provincial Department of Science and Technology of China(No.2010R50020)
文摘Ga doped ZnO （GZO）/Cu grid double layer structures were prepared at room temperature （RT）. We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit （ФTC = 6.19 × 10^-3 Ω^-1） was obtained. In this case, the transmittance, resistivity and filling factor （FF） of the GZO/Cu grid double layer are 83.74%, 1.10 ×10^-4Ω.cm and 0.173, respectively.
基金support of the key project of the National Natural Science Foundation of China under Grant Nos.91333203 and 51172204the Program for Innovative Research Team in University of Ministry of Education of China under Grant No.IRT13037the Zhejiang Provincial Department of Science and Technology of China under Grant No.2010R50020
文摘Ga doped ZnO （OZO）/Cu grid/GZO transparent conductive electrode （TCE） structures were fabricated at room temperature （RT） by using electron beam evaporation （EBE） for the Cu grids and RF magnetron sputtering for the GZO layers. In this work, we investigated the electrical and optical characteristics of GZO/Cu grid/GZO multilayer electrode for thin film solar cells by using evaporated Cu grid and sputtered GZO thin films to enhance the optical transparency without significantly affecting their conductivity. The optical transmittance and sheet resistance of GZO/Cu grid/GZO multilayer are higher than those of GZO/Cu film/GZO multilayer independent of Cu grid separation distance and increase with increasing Cu grid separation distances. The calculation of both transmittance and sheet resistance of GZO/Cu grid] GZO multilayer was based on Cu filling factor correlated with the geometry of Cu grid. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid/GZO multilayer were similar to the experimentally observed ones. The highest figure of merit ФTc is 5.18× 10^-3Ω^-1 for the GZO/Cu grid] GZO multilayer with Cu grid separation distance of 1 mm was obtained, in this case, the transmittance and resistivity were 82.72% and 2.17 × 10 ^-4Ωcm, respectively. The transmittance and resistivity are accentahle for nractical thin film snlar cell annlicatinn~
基金Project supported by the National Natural Science Foundation of China(Nos.11404029,51572033,51172208)the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT)
文摘High quality epitaxial single phase（Ga_（0.96）Mn_（0.04））_2O_3 and Ga_2O_3 thin films have been prepared on sapphire substrates by using laser molecular b（eam）epitaxy（L-MBE）. X-ray diffraction results indicate that the thin films have the monoclinic structure with a 201 preferable orientation. Room temperature（RT） ferromagnetism appears and the magnetic properties of β-（Ga_（0.96）Mn_（0.04））_2O_3 thin film are enhanced compared with our previous works. Experiments as well as the first principle method are used to explain the role of Mn dopant on the structure and magnetic properties of the thin films. The ferromagnetic properties are explained based on the concentration of transition element and the defects in the thin films.
基金Project supported by the National Natural Science Foundation of China(No.10974077)the Innovation Project of Shandong Graduate Education,China(No.SDYY13093)
文摘The structural properties, band structures and densities of states of Sn-doped Ga1.375In0.625O3 with a Sn atom substituting for the Ga atom or a Sn atom substituting for the In atom are calculated by using the firstprinciples method. The substitution of the Sn atom for the Ga atom in Ga1.375In0.625O3（Ga1.25In0.625Sn0.125O3/has larger lattice parameters and stronger Sn–O ionic bonds than that of the substitutional doping of the Sn atom for the In atom in Ga1.375In0.625O3（Ga1.375In0.5Sn0.125O3/. Results show that the Sn atom is preferentially substituted for the In atom in Sn-doped Ga1.375In0.625O3. Sn-doped Ga1.375In0.625O3 exhibits n-type metallic conductivity,and the impurity bands are mainly provided by the Sn 5s states. The optical band gap of Ga1.375In0.5Sn0.125O3is larger than that of Ga1.25In0.625Sn0.125O3. Ga1.25In0.625Sn0.125O3 has a smaller electron effective mass and a slightly larger mobility. However, Ga1.375In0.5Sn0.125O3 has a larger relative electron number and a slightly higher conductivity.
