Classical Mechanics using Einstein’s theories of relativity places a limit on speed as the speed of light. Quantum Mechanics has no such limitation. To understand space accelerating faster than the speed of light and...Classical Mechanics using Einstein’s theories of relativity places a limit on speed as the speed of light. Quantum Mechanics has no such limitation. To understand space accelerating faster than the speed of light and information being exchanged instantaneously between two entangled electrons separated by huge distances, one uses Planck’s length, Planck’s time, and Planck’s mass to indicate that space and time are discrete and therefore along with masses smaller than Planck’s mass are Quantum Mechanical in nature. Faster than the speed of light c = 3 × 10<sup>8</sup> m/s is a classical effect only in dimensions of space lower than our 3-D Universe, but it is a Quantum effect in all dimensions of space. Because space can oscillate sending out ripples from the source, it is the medium used for transporting light waves and gravity waves.展开更多
The wave equation of the electron, recently improved, allows physics to obtain all the quantum numbers and other results explaining the hydrogen spectrum. The Pauli exclusion principle then gives the description of el...The wave equation of the electron, recently improved, allows physics to obtain all the quantum numbers and other results explaining the hydrogen spectrum. The Pauli exclusion principle then gives the description of electron clouds used in chemistry. The relativistic wave equation is associated with a Lagrangian density, thus also with an energy-momentum tensorial density. The wave of an electron cloud adds these energy-momentum densities, while photons in light are precisely those differences between such energy-momentum densities.展开更多
In the study of Terrestrial Gamma-ray Flashes (TGFs) and Sonoluminescence, we observe parallels with larger cosmic events. Specifically, sonoluminescence involves the rapid collapse of bubbles, which closely resembles...In the study of Terrestrial Gamma-ray Flashes (TGFs) and Sonoluminescence, we observe parallels with larger cosmic events. Specifically, sonoluminescence involves the rapid collapse of bubbles, which closely resembles gravitational collapse in space. This observation suggests the potential formation of low-density quantum black holes. These entities, which might be related to dark matter, are thought to experience a kind of transient evaporation similar to Hawking radiation seen in cosmic black holes. Consequently, sonoluminescence could be a valuable tool for investigating phenomena typically linked to cosmic scale events. Furthermore, the role of the Higgs boson is considered in this context, possibly connecting it to both TGFs and sonoluminescence. This research could enhance our understanding of the quantum mechanics of black holes and their relation to dark matter on Earth.展开更多
The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especiall...The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.展开更多
In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport laye...In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively.Moreover,it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel.As a result,the maximum external quantum efficiency of blue QLED was increased from 2.55%to 4.60%,and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device.Our work indicates that election injection plays an important role in blue QLED efficiency and stability.展开更多
The performance of an InGaN/GaN multiple quantum well（MQW） based visible-light Schottky photodiode（PD）is improved by optimizing the source flow of TEGa during In Ga N QW growth. The samples with five-pair InGaN/Ga...The performance of an InGaN/GaN multiple quantum well（MQW） based visible-light Schottky photodiode（PD）is improved by optimizing the source flow of TEGa during In Ga N QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the In GaN QWs with using lower TEGa flow. A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow. Analysis results show that the lower TEGa flow used for depositing In Ga N may lead to superior crystalline quality with improved InGaN/GaN interface, and less structural defects related non-radiative recombination centers formed in the MQWs.展开更多
InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by me...InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy （MOVPE）, which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.展开更多
InGaN based light-emitting diodes （LEDs） with dip-shaped quantum wells and conventional rectangular quantum ~lls are numerically investigated by using the APSYS simulation software. It is found that the structure wi...InGaN based light-emitting diodes （LEDs） with dip-shaped quantum wells and conventional rectangular quantum ~lls are numerically investigated by using the APSYS simulation software. It is found that the structure with dip- aped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on Lmerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed ainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells （MQWs）.展开更多
This paper reviews the recent progress in the synthesis of near-infrared(NIR) lead chalcogenide(PbX;PbX = PbS,PbSe, PbTe) quantum dots(QDs) and their applications in NIR QDs based light emitting diodes(NIR-QLEDs). It ...This paper reviews the recent progress in the synthesis of near-infrared(NIR) lead chalcogenide(PbX;PbX = PbS,PbSe, PbTe) quantum dots(QDs) and their applications in NIR QDs based light emitting diodes(NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance Pb X based NIR-QLEDs.展开更多
BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric...BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric thin film are studied. The photolumineseence （PL） of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence （EL） spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L＇Eclairage （CIE） coordinate of EL is （0.2139, 0.1627）. EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures （200 ℃-400 ℃）. It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.展开更多
Under the condition of two different cases, the absorption of a pulsed probe field and its slow propagation in a triple semiconductor quantum well are investigated. The result shows that semiconductor medium becomes t...Under the condition of two different cases, the absorption of a pulsed probe field and its slow propagation in a triple semiconductor quantum well are investigated. The result shows that semiconductor medium becomes transparent due to the action of control field. Another result shows that by choosing appropriate physical parameters, the slow propagation of the input field can be achieved. The proposed scheme has some potential applications and may lead to the development of the controlled technique of optical buffers and optical delay lines.展开更多
The InGaN/GaN blue light emitting diode（LED） is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wav...The InGaN/GaN blue light emitting diode（LED） is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wave functions,radiative recombination rate,and internal quantum efficiency.The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions（above 90%） under the polarization field.Consequently,the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells,which is three times lower than that in a conventional LED.展开更多
Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in ...Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multiquantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy.展开更多
We reviewed the key advantages and development of the QD-display and other light applications based on their color purity,stability,and solution processisibility.Analysis of quantum dot based LEDs and the main challen...We reviewed the key advantages and development of the QD-display and other light applications based on their color purity,stability,and solution processisibility.Analysis of quantum dot based LEDs and the main challenges facing in this field,such as QD luminescence quenching,QD charging in thin films,and the external quantum efficiency was presented in detail.The description about how different optical down-conversion and structures enabled researchers to overcome these challenges and to commercialize the products to achieve the desirable CRI and color temperature was presented.The recent developments about how to overcome these difficulties have also been discussed in this article.展开更多
A brief introduction of semiconductor self-assembled quantum dots (QDs) applied in single-photon sources is given. Single QDs in confined quantum optical microcavity systems are reviewed along with their optical prope...A brief introduction of semiconductor self-assembled quantum dots (QDs) applied in single-photon sources is given. Single QDs in confined quantum optical microcavity systems are reviewed along with their optical properties and coupling characteristics. Subsequently, the recent progresses in In(Ga)As QDs systems are summarized including the preparation of quantum light sources, multiple methods for embedding single QDs into different microcavities and the scalability of single-photon emitting wavelength. Particularly, several In(Ga)As QD single-photon devices are surveyed including In(Ga)As QDs coupling with nanowires, InAs QDs coupling with distributed Bragg reflection microcavity and the In(Ga)As QDs coupling with micropillar microcavities. Furthermore, applications in the field of single QDs technology are illustrated, such as the entangled photon emission by spontaneous parametric down conversion, the single-photon quantum storage, the chip preparation of single-photon sources as well as the single-photon resonance-fluorescence measurements.展开更多
Surface plasmonic effects of metallic particles have been known to be an effective method to improve the perfor- mances of light emitting didoes. In this work, we report the sputtered Au nanoparticles enhanced electro...Surface plasmonic effects of metallic particles have been known to be an effective method to improve the perfor- mances of light emitting didoes. In this work, we report the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes （ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT：PSS/A1）. By combining the time- resolved photoluminescence, transient electroluminescence, and ultraviolet photoelectron spectrometer measurements, the enhancement of the internal field enhanced exciton coupling to surface plasmons and the electron injection rate increasing with Au nanoparticles＇ incorporation can be explained. Phenomenological numerical calculations indicate that the electron mobility of the electron transport layer increases from 1.39 ×10-5 cm2/V-s to 1.91 ×10-5 cm2/V-s for Au NPs modified device. As a result, the maximum device luminescence is enhanced by 1.41 fold （from 14600 cd/cm2 to 20720 cd/cm2） and maximum current efficiency is improved by 1.29 fold （from 3.12 cd/A to 4.02 cd/A）.展开更多
The dependence of the directions of polarization of exciton emissions, fine structure splittings （FSS）, and polarization anisotropy on the light- and heavy-hole （LH-HH） mixing in semiconductor quantum dots （QDs）...The dependence of the directions of polarization of exciton emissions, fine structure splittings （FSS）, and polarization anisotropy on the light- and heavy-hole （LH-HH） mixing in semiconductor quantum dots （QDs） is investigated using a mesoscopic model. In general, all QDs have a four-fold exciton ground state. Two exciton states have directions of polarization in the growth-plane, while the other two are along the growth direction of the QD. The LH-HH mixing does affect the FSS and polarization anisotropy of bright exciton states in the growth-plane in the low symmetry QDs （e.g., C2v, CS, C1 ）, while it has no effect on the FSS and polarization anisotropy in high symmetry QDs （e.g., C3V, D2d）. When the hole ground state is pure HH or LH, the bright exciton states in the growth-plane are normal to each other. The LH-HH mixing affects the relative intensities and directions of bright exciton states in the growth-plane of the QD. The polarization anisotropy of exciton emissions in the growth-plane of the QD is independent of the phase angle of LH-HH mixing but strongly depends on the magnitude of LH-HH mixing in low symmetry QDs.展开更多
Gallium nitride （GaN） based light-emitting diodes （LEDs） with chirped multiple quantum well （MQW） structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs wit...Gallium nitride （GaN） based light-emitting diodes （LEDs） with chirped multiple quantum well （MQW） structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells （QWs）, LEDs with chirped MQW structures have better internal quantum efficiency （IQE） and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 mA/mm2, reduced down from 28.6% （conventional uniform LEDs） to 23.7% （chirped MQWs-a） and 18.6% （chirped MQWs-b）, respectively. Meanwhile, the peak IQE increases from 76.9% （uniform LEDs） to 83.7% （chirped MQWs-a） and 88.6% （chirped MQWs-b）. The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.展开更多
文摘Classical Mechanics using Einstein’s theories of relativity places a limit on speed as the speed of light. Quantum Mechanics has no such limitation. To understand space accelerating faster than the speed of light and information being exchanged instantaneously between two entangled electrons separated by huge distances, one uses Planck’s length, Planck’s time, and Planck’s mass to indicate that space and time are discrete and therefore along with masses smaller than Planck’s mass are Quantum Mechanical in nature. Faster than the speed of light c = 3 × 10<sup>8</sup> m/s is a classical effect only in dimensions of space lower than our 3-D Universe, but it is a Quantum effect in all dimensions of space. Because space can oscillate sending out ripples from the source, it is the medium used for transporting light waves and gravity waves.
文摘The wave equation of the electron, recently improved, allows physics to obtain all the quantum numbers and other results explaining the hydrogen spectrum. The Pauli exclusion principle then gives the description of electron clouds used in chemistry. The relativistic wave equation is associated with a Lagrangian density, thus also with an energy-momentum tensorial density. The wave of an electron cloud adds these energy-momentum densities, while photons in light are precisely those differences between such energy-momentum densities.
文摘In the study of Terrestrial Gamma-ray Flashes (TGFs) and Sonoluminescence, we observe parallels with larger cosmic events. Specifically, sonoluminescence involves the rapid collapse of bubbles, which closely resembles gravitational collapse in space. This observation suggests the potential formation of low-density quantum black holes. These entities, which might be related to dark matter, are thought to experience a kind of transient evaporation similar to Hawking radiation seen in cosmic black holes. Consequently, sonoluminescence could be a valuable tool for investigating phenomena typically linked to cosmic scale events. Furthermore, the role of the Higgs boson is considered in this context, possibly connecting it to both TGFs and sonoluminescence. This research could enhance our understanding of the quantum mechanics of black holes and their relation to dark matter on Earth.
基金Project supported by the National High Technology Research and Development Program of China(Grant No.2006AA03A121)the National Basic Research Program of China(Grant No.2006CB604900)
文摘The reasons for low output power of AlGalnP Light Emitting Diodes （LEDs） have been analysed. LEDs with AlGaInP material have high internal but low external quantum efficiency and much heat generated inside especially at a large injected current which would reduce both the internal and external quantum efficiencies. Two kinds of LEDs with the same active region but different window layers have been fabricated. The new window layer composed of textured 0.5 μm GaP and thin Indium-Tin-Oxide film has shown that low external quantum efficiency （EQE） has serious impaction on the internal quantum efficiency （IQE）, because the carrier distribution will change with the body temperature increasing due to the heat inside, and the test results have shown the evidence of LEDs with lower output power and bigger wavelength red shift.
基金Project supported by the National Key R&D Program of China(Grant Nos.2016YFB0401702 and 2017YFE0120400)the National Natural Science Foundation of China(Grant Nos.62005114,62005115,and 61875082)+5 种基金Key-Area Research and Development Program of Guangdong Province,China(Grant Nos.2019B010925001 and 2019B010924001)Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting(Grant No.2017KSYS007)Natural Science Foundation of Guangdong Province,China(Grant No.2017B030306010)Guangdong Basic and Applied Basic Research Foundation,China(Grant No.2019A1515110437)Shenzhen Peacock Team Project(Grant No.KQTD2016030111203005)High Level University Fund of Guangdong Province,China(Grant No.G02236004).
文摘In blue quantum dot light emitting diodes(QLEDs),electron injection is insufficient,which would degrade device efficiency and stability.Herein,we employ chlorine passivated ZnO nanoparticles as electron transport layer to facilitate electron injection into QDs effectively.Moreover,it suppresses exciton quenching at the QD/ZnO interface by blocking charge transfer channel.As a result,the maximum external quantum efficiency of blue QLED was increased from 2.55%to 4.60%,and the operation lifetime of blue QLED was nearly 4 times longer than that of the control device.Our work indicates that election injection plays an important role in blue QLED efficiency and stability.
基金supported by the Science and Technology Major Project of Guangdong Province,China(Grant Nos.2014B010119003 and 2015B010112001)
文摘The performance of an InGaN/GaN multiple quantum well（MQW） based visible-light Schottky photodiode（PD）is improved by optimizing the source flow of TEGa during In Ga N QW growth. The samples with five-pair InGaN/GaN MQWs are grown on sapphire substrates by metal organic chemical vapor deposition. From the fabricated Schottky-barrier PDs, it is found that the smaller the TEGa flow, the lower the reverse-bias leakage is. The photocurrent can also be enhanced by depositing the In GaN QWs with using lower TEGa flow. A high responsivity of 1.94 A/W is obtained at 470 nm and -3-V bias in the PD grown with optimized TEGa flow. Analysis results show that the lower TEGa flow used for depositing In Ga N may lead to superior crystalline quality with improved InGaN/GaN interface, and less structural defects related non-radiative recombination centers formed in the MQWs.
基金Project supported by the National Basic Research Program of China(Grant Nos.2013CB632804,2011CB301900,and 2012CB3155605)the National Natural Science Foundation of China(Grant Nos.61176015,61210014,51002085,61321004,61307024,and 61176059)the High Technology Research and Development Program of China(Grant No.2012AA050601)
文摘InGaN quantum dot is a promising optoelectronic material, which combines the advantages of low-dimensional and wide-gap semiconductors. The growth of InGaN quantum dots is still not mature, especially the growth by metal--organic- vapor phase epitaxy （MOVPE）, which is challenge due to the lack of, itin-situ monitoring tool. In this paper, we reviewed the development of InGaN quantum dot growth by MOVPE, including our work on growth of near-UV, green, and red InGaN quantum dots. In addition, we also introduced the applications of InGaN quantum dots on visible light emitting diodes.
基金supported by the National Natural Science Foundation of China (Grant No. 50602018)the Science and Technology Program of Guangdong Province of China (Grant Nos. 2010B090400456, 2009B011100003, and 2010A081002002)the Scienceand Technology Program of Guangzhou City, China (Grant No. 2010U1-D00191)
文摘InGaN based light-emitting diodes （LEDs） with dip-shaped quantum wells and conventional rectangular quantum ~lls are numerically investigated by using the APSYS simulation software. It is found that the structure with dip- aped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on Lmerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed ainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells （MQWs）.
基金Project supported by the National Key Research and Development Program,China(Grant Nos.2016YFB0401702 and 2017YFE0120400)the National Natural Science Foundation of China(Grant Nos.61875082 and 61405089)+6 种基金the Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,China(Grant No.2017KSYS007)the Natural Science Foundation of Guangdong,China(Grant No.2017B030306010)the Guangdong Province’s 2018–2019 Key R&D Program:Environmentally Friendly Quantum Dots Luminescent Materials,China(Grant No.2019B010924001)the Shenzhen Innovation Project,China(Grant Nos.JCYJ20160301113356947 and JSGG20170823160757004)the Shenzhen Peacock Team Project,China(Grant No.KQTD2016030111203005)the Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,China(Grant No.ZDSYS201707281632549)the Tianjin New Materials Science and Technology Key Project,China(Grant No.16ZXCLGX00040)
文摘This paper reviews the recent progress in the synthesis of near-infrared(NIR) lead chalcogenide(PbX;PbX = PbS,PbSe, PbTe) quantum dots(QDs) and their applications in NIR QDs based light emitting diodes(NIR-QLEDs). It summarizes the strategies of how to synthesize high efficiency PbX QDs and how to realize high performance Pb X based NIR-QLEDs.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61076042 and 60607006)the Special Project on Development of National Key Scientific Instruments and Equipment of China (Grant No. 2011YQ16000205)the National High Technology Research and Development Program of China (Grant No. 2011AA03A106)
文摘BaTiO3 （BTO） ferroelectric thin films are prepared by the sol,el method. The fabrication and the optical properties of an InGaN/GaN multiple quantum well light emitting diode （LED） with amorphous BTO ferroelectric thin film are studied. The photolumineseence （PL） of the BTO ferroelectric film is attributed to the structure. The ferroeleetric film which annealed at 673 K for 8 h has the better PL property. The peak width is about 30 nm from 580 nm to 610 nm, towards the yellow region. The mixed electroluminescence （EL） spectrum of InGaN/GaN multiple quantum well LED with 150-nm thick amorphous BTO ferroelectric thin film displays the blue-white light. The Commission Internationale De L＇Eclairage （CIE） coordinate of EL is （0.2139, 0.1627）. EL wavelength and intensity depends on the composition, microstructure and thickness of the ferroelectric thin film. The transmittance of amorphous BTO thin film is about 93% at a wavelength of 450 nm-470 nm. This means the amorphous ferroelectrie thin films can output more blue-ray and emission lights. In addition, the amorphous ferroelectric thin films can be directly fabricated without a binder and used at higher temperatures （200 ℃-400 ℃）. It is very favourable to simplify the preparation process and reduce the heat dissipation requirements of an LED. This provides a new way to study LEDs.
基金Project supported by the National Basic Research Program of China (Grant No. 2005CB724508)the National Natural Science Foundation of China (Grant No. 11065007)+1 种基金the Scientific Research Foundation of Jiangxi Provincial Department of Education,China (Grant No. GJJ10133)the Foundation of Talent of Jinggang of Jiangxi Province,China (Grant No. 2008DQ00400)
文摘Under the condition of two different cases, the absorption of a pulsed probe field and its slow propagation in a triple semiconductor quantum well are investigated. The result shows that semiconductor medium becomes transparent due to the action of control field. Another result shows that by choosing appropriate physical parameters, the slow propagation of the input field can be achieved. The proposed scheme has some potential applications and may lead to the development of the controlled technique of optical buffers and optical delay lines.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013,51102003,and 60990313)the National Basic Research Program of China (Grant No. 2012CB619304)the Specialized Research Fund for the Doctoral Program of Higher Education,China (Grant No. 20100001120014)
文摘The InGaN/GaN blue light emitting diode（LED） is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wave functions,radiative recombination rate,and internal quantum efficiency.The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions（above 90%） under the polarization field.Consequently,the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells,which is three times lower than that in a conventional LED.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400302 and 2016YFB0400603)the National Natural Science Foundation of China(Grant Nos.11574362,61210014,and 11374340)the Innovative Clean-Energy Research and Application Program of Beijing Municipal Science and Technology Commission,China(Grant No.Z151100003515001)
文摘Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multiquantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy.
基金supported by National Key Basic Research Program 973(2010CB327705)National Natural Science Foundation Project(51120125001,51002031,60801002,60971017)+1 种基金Foundation of Doctoral Program of Ministry of Education(20100092110015)the Research Fund for International Young Scientists from NSFC(51050110142,61150110167,51150110160)
文摘We reviewed the key advantages and development of the QD-display and other light applications based on their color purity,stability,and solution processisibility.Analysis of quantum dot based LEDs and the main challenges facing in this field,such as QD luminescence quenching,QD charging in thin films,and the external quantum efficiency was presented in detail.The description about how different optical down-conversion and structures enabled researchers to overcome these challenges and to commercialize the products to achieve the desirable CRI and color temperature was presented.The recent developments about how to overcome these difficulties have also been discussed in this article.
基金supported by the National Key Technologies R&D Program of China(Grant No.2018YFA0306101)the Key R&D Program of Guangdong Province(Grant No.2018B030329001)+1 种基金the Scientific instrument developing project of the Chinese Academy of Science(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant No.61505196)
文摘A brief introduction of semiconductor self-assembled quantum dots (QDs) applied in single-photon sources is given. Single QDs in confined quantum optical microcavity systems are reviewed along with their optical properties and coupling characteristics. Subsequently, the recent progresses in In(Ga)As QDs systems are summarized including the preparation of quantum light sources, multiple methods for embedding single QDs into different microcavities and the scalability of single-photon emitting wavelength. Particularly, several In(Ga)As QD single-photon devices are surveyed including In(Ga)As QDs coupling with nanowires, InAs QDs coupling with distributed Bragg reflection microcavity and the In(Ga)As QDs coupling with micropillar microcavities. Furthermore, applications in the field of single QDs technology are illustrated, such as the entangled photon emission by spontaneous parametric down conversion, the single-photon quantum storage, the chip preparation of single-photon sources as well as the single-photon resonance-fluorescence measurements.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.21603012,61735004,and 61722502)
文摘Surface plasmonic effects of metallic particles have been known to be an effective method to improve the perfor- mances of light emitting didoes. In this work, we report the sputtered Au nanoparticles enhanced electroluminescence in inverted quantum dot light emitting diodes （ITO/Au NPs/ZnMgO/QDs/TFB/PEDOT：PSS/A1）. By combining the time- resolved photoluminescence, transient electroluminescence, and ultraviolet photoelectron spectrometer measurements, the enhancement of the internal field enhanced exciton coupling to surface plasmons and the electron injection rate increasing with Au nanoparticles＇ incorporation can be explained. Phenomenological numerical calculations indicate that the electron mobility of the electron transport layer increases from 1.39 ×10-5 cm2/V-s to 1.91 ×10-5 cm2/V-s for Au NPs modified device. As a result, the maximum device luminescence is enhanced by 1.41 fold （from 14600 cd/cm2 to 20720 cd/cm2） and maximum current efficiency is improved by 1.29 fold （from 3.12 cd/A to 4.02 cd/A）.
文摘The dependence of the directions of polarization of exciton emissions, fine structure splittings （FSS）, and polarization anisotropy on the light- and heavy-hole （LH-HH） mixing in semiconductor quantum dots （QDs） is investigated using a mesoscopic model. In general, all QDs have a four-fold exciton ground state. Two exciton states have directions of polarization in the growth-plane, while the other two are along the growth direction of the QD. The LH-HH mixing does affect the FSS and polarization anisotropy of bright exciton states in the growth-plane in the low symmetry QDs （e.g., C2v, CS, C1 ）, while it has no effect on the FSS and polarization anisotropy in high symmetry QDs （e.g., C3V, D2d）. When the hole ground state is pure HH or LH, the bright exciton states in the growth-plane are normal to each other. The LH-HH mixing affects the relative intensities and directions of bright exciton states in the growth-plane of the QD. The polarization anisotropy of exciton emissions in the growth-plane of the QD is independent of the phase angle of LH-HH mixing but strongly depends on the magnitude of LH-HH mixing in low symmetry QDs.
基金supported by the National High Technology Research and Development Program of China(Grant No.2014AA032608)the Key Laboratory for Mechanical Behavior of Material of Xi’an Jiaotong University,China(Grant No.20121201)the Fundamental Research Funds for the Central Universities,China
文摘Gallium nitride （GaN） based light-emitting diodes （LEDs） with chirped multiple quantum well （MQW） structures have been investigated experimentally and numerically in this paper. Compared to conventional LEDs with uniform quantum wells （QWs）, LEDs with chirped MQW structures have better internal quantum efficiency （IQE） and carrier injection efficiency. The droop ratios of LEDs with chirped MQW structures show a remarkable improvement at 600 mA/mm2, reduced down from 28.6% （conventional uniform LEDs） to 23.7% （chirped MQWs-a） and 18.6% （chirped MQWs-b）, respectively. Meanwhile, the peak IQE increases from 76.9% （uniform LEDs） to 83.7% （chirped MQWs-a） and 88.6% （chirped MQWs-b）. The reservoir effect of chirped MQW structures is the significant reason as it could increase hole injection efficiency and radiative recombination. The leakage current and Auger recombination of chirped MQW structures can also be suppressed. Furthermore, the chirped MQWs-b structure with lower potential barriers can enhance the reservoir effect and obtain further improvement of the carrier injection efficiency and radiative recombination, as well as further suppressing efficiency droop.
