An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one p...An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 I^m antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below i ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.展开更多
We demonstrate the growth of terahertz quantum cascade laser （THz QCL） by gas source molecular beam epitaxy. X-ray diffraction and cross-sectional transmission electron microscopic measurements show the high crystal...We demonstrate the growth of terahertz quantum cascade laser （THz QCL） by gas source molecular beam epitaxy. X-ray diffraction and cross-sectional transmission electron microscopic measurements show the high crystalline quality of the THz QCL active region, From the cross-sectional transmission electron microscopy image, sharp interfaces are observed and the deduced cascade period thickness is consistent with the result of x-ray diffraction. The test device is lasing at 3.39THz and operating up to lOOK in pulsed mode. At IOK, the maximum output power is greater than 1 mW with a threshold current density of 738 A/cm^2.展开更多
We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well str...We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well structure tensile AlInGaAs are used as barriers to partially compensate for the significant compressive strain in the wells, the strain compensation effects are confirmed by x-ray measurement. The photoluminescence spectra of the sample are dominated by the excitonic recombination peak in the whole temperature range. The thermal quenching, peak energy shift and line-width broadening of the PL spectra are analysed in detail, the mechanisms are discussed.展开更多
Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of ...Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of Yb^3＋ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb^3＋ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb^3＋ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.展开更多
PbS-doped glasses are prepared. Absorption and luminescence spectra show that both the absorption and infrared emission can be tuned widely by thermal treatment conditions. Optical amplification at 1300 nm is observed...PbS-doped glasses are prepared. Absorption and luminescence spectra show that both the absorption and infrared emission can be tuned widely by thermal treatment conditions. Optical amplification at 1300 nm is observed, and amplified spontaneous emission （ASE） spectrum is also measured to confirm the optical gain from PbS quantum dots.展开更多
A modulation frequency multiplexed dual diode-laser system is developed for simultaneous detection of the two most common fire gas products CO and CO2. Simultaneous detection is achieved by modulating each laser at di...A modulation frequency multiplexed dual diode-laser system is developed for simultaneous detection of the two most common fire gas products CO and CO2. Simultaneous detection is achieved by modulating each laser at different frequencies, demodulating the signal by a pair of lock-in amplifiers for each gas. Laser beams are combined and detected by one detector after passing through an identical optical path. The experimental results show little performance degradation associated with modulation frequency multiplexing, and no cross-talk between the two multiplexed detection channels is measured.展开更多
An efficient and high-power diode-laser single-end-pumped Nd：YVO4 laser with cw emission at 1342nm is presented. With a crystal single-end-pumped by a fibre-coupled diode laser, an output power of 7.36 W is obtained ...An efficient and high-power diode-laser single-end-pumped Nd：YVO4 laser with cw emission at 1342nm is presented. With a crystal single-end-pumped by a fibre-coupled diode laser, an output power of 7.36 W is obtained from the laser cavity of concave-convex, eorresponding to an optical-to-optical conversion efficiency of 32.8%. The laser is operated in TEM00 mode with small rms noise amplitude of 0.3%. This represents, to the best of our knowledge, the highest power obtained from a diode-laser single-end-pumped Nd：YVO4 cw laser at 1342nm 80 far.展开更多
We study a femtosecond Ti：sapphire laser pumped optical parametric amplifier （OPA） at 1053nm. The OPA Generates stable signal pulses with duration smaller than l OOfs, wavelength drift smaller than 0.5 nm, and puls...We study a femtosecond Ti：sapphire laser pumped optical parametric amplifier （OPA） at 1053nm. The OPA Generates stable signal pulses with duration smaller than l OOfs, wavelength drift smaller than 0.5 nm, and pulseto-pulse fluctuation of about ±4%, by employinG an external seeder. In a terawatt laser pumped large-aperture LiNbOa OPA, pulse energy at signal has been scaled up to 4mJ. This m J-class femtosecond OPA at 1053nm presents a feasible alternative to optical parametric chirped-pulse amplification, and is ready to be applied to petawatt lasers.展开更多
An erbium-doped phosphate glass fibre has been drawn by the rod-in-tube technique in our laboratory. The gain for the Er^3＋-doped phosphate glass fibre with different pump powers and with different input signal wavel...An erbium-doped phosphate glass fibre has been drawn by the rod-in-tube technique in our laboratory. The gain for the Er^3＋-doped phosphate glass fibre with different pump powers and with different input signal wavelengths is investigated. The 2.2-cm-long fibre, pumped by a single-mode 980-nm fibre-pigtailed laser diode, can provide a net gain per unit length greater than 1.SdB/cm. The pump threshold is about 50mW at the wavelength of 1534nm, and below 70roW at 1550nm. The gain linewidth of the Er^3＋-doped phosphate glass fibre is greater than 34 nm and can cover the C band in optical communication networks.展开更多
We theoretically investigate the additional correction to the Casimir effect due to the change of dielectric constant with temperature, which is different from the previous research that have widely taken dielectric c...We theoretically investigate the additional correction to the Casimir effect due to the change of dielectric constant with temperature, which is different from the previous research that have widely taken dielectric constants of materials as a value independent of temperature. It is found that such a correction can go beyond 20% for some cases and it should not be ignored. Due to the prominent correction, it is possible to tune the Casimir force by such an effect.展开更多
Detection wavelength is one of the key performance indices of infrared photodetectors. We study the character of detection wavelength of the strained InxGa1-xAs/GaAs very-long-wavelength （〉 12 μm） quantum well inf...Detection wavelength is one of the key performance indices of infrared photodetectors. We study the character of detection wavelength of the strained InxGa1-xAs/GaAs very-long-wavelength （〉 12 μm） quantum well infrared photodetectors （VLW-QWIPs） characterized by the photoluminescence （PL） and photocurrent （PC） measurements. Based on the theoretical calculation and experimental data, we have built a practical model for the Inx Ga1-xAs/GaAs strained VLW-QWIPs, from which the interband transitions, intersubband transition and peak detection wavelength can be determined. Afterwards, the dependences of detection wavelength and device operation mode on the In mole fraction and InxGa1-xAs well width are presented, which will be helpful for device design and optimization.展开更多
The self-assembled InAs quantum dots （QDs） on GaAs substrates with low density （5×10^8 cm^-2） are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemic...The self-assembled InAs quantum dots （QDs） on GaAs substrates with low density （5×10^8 cm^-2） are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition. The macro-PL spectra exhibit three emission peaks at 1361, 1280 and 1204nm, corresponding to the ground level （GS）, the first excited state （ES1） and the second excited state （ES2） of the QDs, respectively, which are obtained when the GaAs capping layer is grown using triethylgallium and tertiallybutylarsine. As a result of micro-PL, only a few peaks from individual dots have been observed. The exciton-biexciton behaviour was clearly observed at low temperature.展开更多
We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60μm re...We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60μm respectively, a peak output power more than 500mW is achieved in pulsed mode operation. A low threshold current density Jth = 2.6 kA/cm^2 gives the devices good lasing characteristics. In a drive frequency of i kHz, the laser operates up to 20% duty cycle.展开更多
We present a detailed study of λ- 9.75 μm GaAs/AlGaAs quantum cascade lasers. For a coated 2-rmm-long and 40-μm-wide laser, an optical power of 85 μ W is observed at 95% duty cycle at 80K. At a moderate driving pu...We present a detailed study of λ- 9.75 μm GaAs/AlGaAs quantum cascade lasers. For a coated 2-rmm-long and 40-μm-wide laser, an optical power of 85 μ W is observed at 95% duty cycle at 80K. At a moderate driving pulse （1 kHz and 1% duty cycle）,the device presents a peak power more than 20mW even at 120K. At 80K, the fitted result of threshold current densities shows evidence of potential cw operation.展开更多
We report the low threshold current density operation of strain-compensated In0.64 Ga0.36As/In0.3sAl0.62As quantum cascade lasers emitting near 4.94 μm. By employing an enlarged strain-compensated structure and optim...We report the low threshold current density operation of strain-compensated In0.64 Ga0.36As/In0.3sAl0.62As quantum cascade lasers emitting near 4.94 μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57kA/cm^2 at 80 K is achieved/or an uncoated 20-μm-wide and 2.5-mm-long laser.展开更多
We investigate a silica-based thulium-doped fibre amplifier, which is a promising candidate for an amplifying device in the S band, in detail using a single wavelength upconversion pumping scheme centred at 1064nm. Ou...We investigate a silica-based thulium-doped fibre amplifier, which is a promising candidate for an amplifying device in the S band, in detail using a single wavelength upconversion pumping scheme centred at 1064nm. Our experimental results show that in terms of gain and noise figure, the bi-directional pumping scheme is the best one in the three pumping schemes, named forward, backward and hi-directional pumping schemes. The amplifier has a gain not only in the S band, but also in the C band, even in the L band. The gain is above 3dB from 1525nm to 1580nm with a peak of 7.SdB.展开更多
文摘An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one photodiode is used to catch both absorption and reference signals by time division multiplexing. The detection of nitrous oxide adopting this scheme using a 2.1 I^m antimonide laser and an InGaAs photodiode has been demonstrated experimentally with detection limit below i ppm. Using this on chip reference scheme the fluctuations from the optical path and devices can be compensated effectively; the sensor system is simplified distinctly.
文摘We demonstrate the growth of terahertz quantum cascade laser （THz QCL） by gas source molecular beam epitaxy. X-ray diffraction and cross-sectional transmission electron microscopic measurements show the high crystalline quality of the THz QCL active region, From the cross-sectional transmission electron microscopy image, sharp interfaces are observed and the deduced cascade period thickness is consistent with the result of x-ray diffraction. The test device is lasing at 3.39THz and operating up to lOOK in pulsed mode. At IOK, the maximum output power is greater than 1 mW with a threshold current density of 738 A/cm^2.
文摘We investigate the properties of symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice, which is grown by gas source molecular beam epitaxy via digital alloy method. In the quantum well structure tensile AlInGaAs are used as barriers to partially compensate for the significant compressive strain in the wells, the strain compensation effects are confirmed by x-ray measurement. The photoluminescence spectra of the sample are dominated by the excitonic recombination peak in the whole temperature range. The thermal quenching, peak energy shift and line-width broadening of the PL spectra are analysed in detail, the mechanisms are discussed.
文摘Intense room-temperature near infrared （NIR） photoluminescence （980 nm and 1032 nm） is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the ^2F5/2 and ^2F7/2 levels of Yb^3＋ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb^3＋ in SiO2. Photoluminescence excitation spectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb^3＋ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminescence of rare-earth ions in SiO2 is very effective.
基金Supported by the National Natural Science Foundation of China under Grant No 60778039, the National Basic Research Programme of China under Grant No 2006CB806007, and the Programme for Changjiang Scholars and Innovative Research Team in University （IRT0651）.
文摘PbS-doped glasses are prepared. Absorption and luminescence spectra show that both the absorption and infrared emission can be tuned widely by thermal treatment conditions. Optical amplification at 1300 nm is observed, and amplified spontaneous emission （ASE） spectrum is also measured to confirm the optical gain from PbS quantum dots.
基金Supported by the National Natural Science Foundation of China under Grant No 50534050, and the National High Technology Research and Development Programme of China under Grant No 2005AA641010.
文摘A modulation frequency multiplexed dual diode-laser system is developed for simultaneous detection of the two most common fire gas products CO and CO2. Simultaneous detection is achieved by modulating each laser at different frequencies, demodulating the signal by a pair of lock-in amplifiers for each gas. Laser beams are combined and detected by one detector after passing through an identical optical path. The experimental results show little performance degradation associated with modulation frequency multiplexing, and no cross-talk between the two multiplexed detection channels is measured.
文摘An efficient and high-power diode-laser single-end-pumped Nd：YVO4 laser with cw emission at 1342nm is presented. With a crystal single-end-pumped by a fibre-coupled diode laser, an output power of 7.36 W is obtained from the laser cavity of concave-convex, eorresponding to an optical-to-optical conversion efficiency of 32.8%. The laser is operated in TEM00 mode with small rms noise amplitude of 0.3%. This represents, to the best of our knowledge, the highest power obtained from a diode-laser single-end-pumped Nd：YVO4 cw laser at 1342nm 80 far.
基金Supported by the Science and Technology Commission Foundation of Shanghai （Nos 05JC14005, 05SG02）, and the National Natural Science Foundation of China under Grant Nos 60538010, 10376009 and 10576009.
文摘We study a femtosecond Ti：sapphire laser pumped optical parametric amplifier （OPA） at 1053nm. The OPA Generates stable signal pulses with duration smaller than l OOfs, wavelength drift smaller than 0.5 nm, and pulseto-pulse fluctuation of about ±4%, by employinG an external seeder. In a terawatt laser pumped large-aperture LiNbOa OPA, pulse energy at signal has been scaled up to 4mJ. This m J-class femtosecond OPA at 1053nm presents a feasible alternative to optical parametric chirped-pulse amplification, and is ready to be applied to petawatt lasers.
文摘An erbium-doped phosphate glass fibre has been drawn by the rod-in-tube technique in our laboratory. The gain for the Er^3＋-doped phosphate glass fibre with different pump powers and with different input signal wavelengths is investigated. The 2.2-cm-long fibre, pumped by a single-mode 980-nm fibre-pigtailed laser diode, can provide a net gain per unit length greater than 1.SdB/cm. The pump threshold is about 50mW at the wavelength of 1534nm, and below 70roW at 1550nm. The gain linewidth of the Er^3＋-doped phosphate glass fibre is greater than 34 nm and can cover the C band in optical communication networks.
基金Supported by the National Natural Science Foundation of China under Grant No 10374009, the National Key Basic Research Special Foundation of China under Grant No 2001CB610402, the NCET, the RFDP, and Beijing Normal University.
文摘We theoretically investigate the additional correction to the Casimir effect due to the change of dielectric constant with temperature, which is different from the previous research that have widely taken dielectric constants of materials as a value independent of temperature. It is found that such a correction can go beyond 20% for some cases and it should not be ignored. Due to the prominent correction, it is possible to tune the Casimir force by such an effect.
基金Supported by the National Natural Science Foundation of China under Grant Nos 10234040, 60476031 and 10474108.
文摘Detection wavelength is one of the key performance indices of infrared photodetectors. We study the character of detection wavelength of the strained InxGa1-xAs/GaAs very-long-wavelength （〉 12 μm） quantum well infrared photodetectors （VLW-QWIPs） characterized by the photoluminescence （PL） and photocurrent （PC） measurements. Based on the theoretical calculation and experimental data, we have built a practical model for the Inx Ga1-xAs/GaAs strained VLW-QWIPs, from which the interband transitions, intersubband transition and peak detection wavelength can be determined. Afterwards, the dependences of detection wavelength and device operation mode on the In mole fraction and InxGa1-xAs well width are presented, which will be helpful for device design and optimization.
文摘The self-assembled InAs quantum dots （QDs） on GaAs substrates with low density （5×10^8 cm^-2） are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition. The macro-PL spectra exhibit three emission peaks at 1361, 1280 and 1204nm, corresponding to the ground level （GS）, the first excited state （ES1） and the second excited state （ES2） of the QDs, respectively, which are obtained when the GaAs capping layer is grown using triethylgallium and tertiallybutylarsine. As a result of micro-PL, only a few peaks from individual dots have been observed. The exciton-biexciton behaviour was clearly observed at low temperature.
基金Supported by the National Natural Science Foundation of China under Grant Nos 60525406, 90101002 and 60136010, the Special Funds for Major State Basic Research Project under Grant No G20000683-2, and the National High Technology Programme of China under Grant Nos 2001AA311140 and 2005AA31G040.
文摘We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60μm respectively, a peak output power more than 500mW is achieved in pulsed mode operation. A low threshold current density Jth = 2.6 kA/cm^2 gives the devices good lasing characteristics. In a drive frequency of i kHz, the laser operates up to 20% duty cycle.
基金Supported by the National Natural Science Foundation of China for Distinguished Young Scholars （60525406）, the General Programme and Key Programme of the National Natural Since Foundation of China （90101002 and 60136010）, the Special Fund for Major State Basics Research Project of China （G20000683-2）, and National High Technology Programs of China （2001AA311140 and 2005AA31G040）.
文摘We present a detailed study of λ- 9.75 μm GaAs/AlGaAs quantum cascade lasers. For a coated 2-rmm-long and 40-μm-wide laser, an optical power of 85 μ W is observed at 95% duty cycle at 80K. At a moderate driving pulse （1 kHz and 1% duty cycle）,the device presents a peak power more than 20mW even at 120K. At 80K, the fitted result of threshold current densities shows evidence of potential cw operation.
基金Supported by the National Science Fund for Distinguished Young Scholars under Grant No 60525406, the National Basic Research Programme of China under Grant No 2006CB604903, and Key Project of the National Natural Science Foundation of China under Grant No 60136010.
文摘We report the low threshold current density operation of strain-compensated In0.64 Ga0.36As/In0.3sAl0.62As quantum cascade lasers emitting near 4.94 μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57kA/cm^2 at 80 K is achieved/or an uncoated 20-μm-wide and 2.5-mm-long laser.
文摘We investigate a silica-based thulium-doped fibre amplifier, which is a promising candidate for an amplifying device in the S band, in detail using a single wavelength upconversion pumping scheme centred at 1064nm. Our experimental results show that in terms of gain and noise figure, the bi-directional pumping scheme is the best one in the three pumping schemes, named forward, backward and hi-directional pumping schemes. The amplifier has a gain not only in the S band, but also in the C band, even in the L band. The gain is above 3dB from 1525nm to 1580nm with a peak of 7.SdB.
