A low-power,high-frequency CMOS peak detector is proposed. This detector can detect RF signal and base-band signal peaks. The circuit is designed using SMIC 0.35μm standard CMOS technology. Both theoretical calculati...A low-power,high-frequency CMOS peak detector is proposed. This detector can detect RF signal and base-band signal peaks. The circuit is designed using SMIC 0.35μm standard CMOS technology. Both theoretical calculations and post simulations show that the detection error is no more than 2% for various temperatures and processes when the input amplitude is larger than 400mV. The detection bandwidth is up to 10GHz, and its static current dissipation is less than 20μA.展开更多
In this paper full-energy peak (photopeak) efficiency and photopeak attenuation coefficient of 3'' × 3'' NaI(Tl) well-type scintillation detector were calculated using gamma-rayisotropic radiating...In this paper full-energy peak (photopeak) efficiency and photopeak attenuation coefficient of 3'' × 3'' NaI(Tl) well-type scintillation detector were calculated using gamma-rayisotropic radiating point sources (with photon energy: 0.245, 0.344, 0.662, 0.779, 0.964, 1.1732, 1.333 and 1.408 MeV) placed outside the detector well. These energies were obtained from <sup>152</sup>Eu, <sup>137</sup>Cs and <sup>60</sup>Co. The relations between the full energy peak efficiency and photopeak attenuation coefficients, were plotted vs. photon energy at different sources to detector distance, and it found that the full energy peak efficiency decreased by increasing the distance between the source and the detector.展开更多
Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such...Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such as cadmium telluride and cadmium zinc telluride. The consistency of peak position in radiation detection devices is important to practical applications. In this paper, we have characterized a CdZnTeSe planar detector for bias voltages in the range of -20 V to -200 V and amplifier shaping time of 2, 3 and 6 μs. The peak position of the 59.6-keV gamma line of <sup>241</sup>Am becomes more stable as the absolute value of the applied voltage increases. The best energy resolution of 8.5% was obtained for the 59.6-keV gamma peak at -160 V bias voltage and 3-μs shaping time. The energy resolution was relatively stable in the -120 V to -200 V range for a 6-μs shaping time. Future work will be focused on the study of the peak position and energy resolution over time.展开更多
A 10 Gbit/s burst-mode preamplifier is designed for passive optical networks （PONs）. To achieve a high dynamic range and fast response, the circuit is DC coupled, and a feed-back type peak detector is designed to pe...A 10 Gbit/s burst-mode preamplifier is designed for passive optical networks （PONs）. To achieve a high dynamic range and fast response, the circuit is DC coupled, and a feed-back type peak detector is designed to perform auto-gaincontrol and threshold extraction. Regulated cascade （RGC） architecture is exploited as the input stage to reduce the input impedance of the circuit and isolate the large parasitic capacitance including the photodiode capacitance from the determination pole, thus increasing the bandwidth. This preamplifier is implemented using the low-cost 0. 13 ixm CMOS technology. The die area is 425 μm × 475 μm and the total power dissipation is 23.4 mW. The test results indicate that the preamplifier can work at a speed from 1.25 to 10.312 5 Gbit/s, providing a high transimpedance gain of 64.0 dBΩ and a low gain of 54. 6 dBl2 with a dynamic input range of over 22.9 dB. The equivalent input noise current is 23. 4 pA/ Hz1/2. The proposed burst amplifier satisfies related specifications defined in 10G-EPON and XG-PON standards.展开更多
文摘A low-power,high-frequency CMOS peak detector is proposed. This detector can detect RF signal and base-band signal peaks. The circuit is designed using SMIC 0.35μm standard CMOS technology. Both theoretical calculations and post simulations show that the detection error is no more than 2% for various temperatures and processes when the input amplitude is larger than 400mV. The detection bandwidth is up to 10GHz, and its static current dissipation is less than 20μA.
文摘In this paper full-energy peak (photopeak) efficiency and photopeak attenuation coefficient of 3'' × 3'' NaI(Tl) well-type scintillation detector were calculated using gamma-rayisotropic radiating point sources (with photon energy: 0.245, 0.344, 0.662, 0.779, 0.964, 1.1732, 1.333 and 1.408 MeV) placed outside the detector well. These energies were obtained from <sup>152</sup>Eu, <sup>137</sup>Cs and <sup>60</sup>Co. The relations between the full energy peak efficiency and photopeak attenuation coefficients, were plotted vs. photon energy at different sources to detector distance, and it found that the full energy peak efficiency decreased by increasing the distance between the source and the detector.
文摘Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such as cadmium telluride and cadmium zinc telluride. The consistency of peak position in radiation detection devices is important to practical applications. In this paper, we have characterized a CdZnTeSe planar detector for bias voltages in the range of -20 V to -200 V and amplifier shaping time of 2, 3 and 6 μs. The peak position of the 59.6-keV gamma line of <sup>241</sup>Am becomes more stable as the absolute value of the applied voltage increases. The best energy resolution of 8.5% was obtained for the 59.6-keV gamma peak at -160 V bias voltage and 3-μs shaping time. The energy resolution was relatively stable in the -120 V to -200 V range for a 6-μs shaping time. Future work will be focused on the study of the peak position and energy resolution over time.
基金The Key Technology Research and Development Program of Jiangsu Province ( No. BE2008128)
文摘A 10 Gbit/s burst-mode preamplifier is designed for passive optical networks （PONs）. To achieve a high dynamic range and fast response, the circuit is DC coupled, and a feed-back type peak detector is designed to perform auto-gaincontrol and threshold extraction. Regulated cascade （RGC） architecture is exploited as the input stage to reduce the input impedance of the circuit and isolate the large parasitic capacitance including the photodiode capacitance from the determination pole, thus increasing the bandwidth. This preamplifier is implemented using the low-cost 0. 13 ixm CMOS technology. The die area is 425 μm × 475 μm and the total power dissipation is 23.4 mW. The test results indicate that the preamplifier can work at a speed from 1.25 to 10.312 5 Gbit/s, providing a high transimpedance gain of 64.0 dBΩ and a low gain of 54. 6 dBl2 with a dynamic input range of over 22.9 dB. The equivalent input noise current is 23. 4 pA/ Hz1/2. The proposed burst amplifier satisfies related specifications defined in 10G-EPON and XG-PON standards.
