Titanium-aluminum-nitride(TiAlN) films were grown by plasma-enhanced atomic layer deposition(PEALD)on 316 L stainless steel at a deposition temperature of 200 °C. A supercycle, consisting of one AlN and ten TiN s...Titanium-aluminum-nitride(TiAlN) films were grown by plasma-enhanced atomic layer deposition(PEALD)on 316 L stainless steel at a deposition temperature of 200 °C. A supercycle, consisting of one AlN and ten TiN subcycles, was used to prepare TiAlN films with a chemical composition of Ti_(0.25)Al_(0.25)N_(0.50). The addition of AlN to TiN resulted in an increased electrical resistivity of TiAlN films of 2800 μΩ cm, compared with 475 μΩ cm of TiN films, mainly due to the high electrical resistivity of AlN and the amorphous structure of TiAlN. However, potentiostatic polarization measurements showed that amorphous TiAlN films exhibited excellent corrosion resistance with a corrosion current density of 0.12 μA/cm^2, about three times higher than that of TiN films, and about 12.5 times higher than that of 316 L stainless steel.展开更多
Among nitride fibers,aluminum nitride(AlN)fibers have been developed for various advanced applications due to their mechanical flexibility,high thermal conductivity,and excellent electrical insulation and chemical sta...Among nitride fibers,aluminum nitride(AlN)fibers have been developed for various advanced applications due to their mechanical flexibility,high thermal conductivity,and excellent electrical insulation and chemical stability.This article presents an overview on the recent progress of AlN fibers.The properties of AlN,particularly the thermal conductivity of AlN in polymer matrix composites are introduced.Afterward,two major approaches,carbothermal reduction and nitriding polycrystalline alumina fiber,for the preparation of AlN fibers are discussed.The carbothermal reduction includes electrospinning,solution blow spinning,and chemical vapor deposition.Furthermore,some perspectives on the future directions for the preparation and application of fibrous AlN are highlighted.This review is expected to provide readers with valuable guidance on the preparation of AlN fibers and inspire researchers to explore more potential applications.展开更多
Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen...Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N展开更多
Silver nanoparticle thin films with different average particle diameters are grown on silicon substrates. Boron nitride thin films are then deposited on the silver nanoparticle interlayers by radio frequency(RF) magne...Silver nanoparticle thin films with different average particle diameters are grown on silicon substrates. Boron nitride thin films are then deposited on the silver nanoparticle interlayers by radio frequency(RF) magnetron sputtering. The boron nitride thin films are characterized by Fourier transform infrared spectra. The average particle diameters of silver nanoparticle thin films are 126.6, 78.4, and 178.8 nm. The results show that the sizes of the silver nanoparticles have effects on the intensities of infrared spectra of boron nitride thin films. An enhanced infrared absorption is detected for boron nitride thin film grown on silver nanoparticle thin film. This result is helpful to study the growth mechanism of boron nitride thin film.展开更多
The optical properties of hexagonal boron nitride(h-BN) thin films were studied in this paper.The films were characterized by Fourier transform infrared spectroscopy,UV-visible transmittance and reflection spectra.h-B...The optical properties of hexagonal boron nitride(h-BN) thin films were studied in this paper.The films were characterized by Fourier transform infrared spectroscopy,UV-visible transmittance and reflection spectra.h-BN thin films with a wide optical band gap Eg(5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency(RF) bias magnetron sputtering and post-deposition annealing at 970 K.The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model.The annealed film shows satisfactory structure stability.However,high temperature still has a significant effect on the optical absorption properties,refractive index n,and optical conductivity σ of h-BN thin films.The blue-shift of the optical absorption edge and the increase of Eg probably result from stress relaxation in the film under high temperatures.In addition,it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions.Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.展开更多
Diamond films were successfully synthesized on aluminum nitride(AlN) ceramic substrates by hot filament chemical vapor deposition(HFCVD) method. It is notices that the thermal conductivity of the diamond film/aluminum...Diamond films were successfully synthesized on aluminum nitride(AlN) ceramic substrates by hot filament chemical vapor deposition(HFCVD) method. It is notices that the thermal conductivity of the diamond film/aluminum nitride ceramic(DF/AlN) composite has reached 2.04 W/cm·K, 73%greater than that of AlN ceramic. Compared with the measurement of scanning electron microscopy(SEM) and Raman spectroscopy, the influence of diamond films on the thermal conductivity of the composites was pointed out. The adhesion and the stresses of diamond films were also studied. The unusual stability and very good adhesion of diamond films on AlN ceramic substrates obtained are attributed to the formation of aluminum carbide.展开更多
Under far from equilibrium conditions, the formation mechanism of solid can be studied in terms of the dynamic scaling theory. The roughness and dynamic scaling behavior of the Fe-N thin films were studied by atomic f...Under far from equilibrium conditions, the formation mechanism of solid can be studied in terms of the dynamic scaling theory. The roughness and dynamic scaling behavior of the Fe-N thin films were studied by atomic force microscopy and grazing incidence X-ray scattering. The results indicate that the roughness of the surface increases with increasing sputtering time during the course of magnetron sputtering, and the surface exhibits a fractal characteristic. While the Fe-N films prepared by compound technology—combining magnetron sputtering with plasma based ion implantation are not in agreement with the fractal theory.展开更多
CN x /SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF\|PECVD ). As a buffer layer, SiCN ensured the adhesion of the CN x thin fi...CN x /SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF\|PECVD ). As a buffer layer, SiCN ensured the adhesion of the CN x thin films on Ti substrates. X\|ray diffraction ( XRD) measurement revealed that the composite films possessed α\|C 3 N 4 structure. The microhardness of the films was 48 to 50 GPa. In order to test the characteristics of wear and corrosion resistances, we prepared Ti alloy samples with and without CN x /SiCN composite films. Also for strengthening the effect of wear and corrosion, the wear tests were carried out under high load (12 MPa) and in 0.9% NaCl solution. Results of the wear tests and the corrosive electrochemical measurements showed that the samples coated with CN x films had excellent characteristics of wear and corrosion resistances compared with Ti alloy substrate samples.展开更多
Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasma-enhanced chemical vapour deposition. It was found that the introduction of O 2 into the deposition system ...Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasma-enhanced chemical vapour deposition. It was found that the introduction of O 2 into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B 2 H 6 concentration of 2.5% during film deposition, the critical O 2 concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4%, while that for the growth of cubic boron nitride was higher than 2.1%. Moreover, the infrared absorption peak observed at around 1230-1280 cm-1 , frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.展开更多
AlN thin films have been grown on R((1-12) surface-cut)-Al2O3, SiO2-glass and C((001) surface-cut)-Al2O3 substrates, by using a reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN film has (1...AlN thin films have been grown on R((1-12) surface-cut)-Al2O3, SiO2-glass and C((001) surface-cut)-Al2O3 substrates, by using a reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN film has (110) orientation of wurtzite crystal structure for R-Al2O3 and (001) orientation for SiO2-glass and C-Al2O3 substrates. The film thickness was analyzed by Rutherford backscattering spectroscopy (RBS) and it appears that XRD intensity does not show a linear increase with the film thickness but a correlation with the stress, i.e., deviation of the lattice parameter of the film from that of bulk. The film composition and impurities have been analyzed by ion beam techniques. Effects of high-energy ion beams are briefly presented on atomic structure (whether stress relaxation occurs or not), surface morphology and optical properties.展开更多
Hydrogen is a promising renewable energy source for fossil-free transportation and electrical energy generation.However,leaking hydrogen in high-temperature production processes can cause an explosion,which endangers ...Hydrogen is a promising renewable energy source for fossil-free transportation and electrical energy generation.However,leaking hydrogen in high-temperature production processes can cause an explosion,which endangers production workers and surrounding areas.To detect leaks early,we used a sensor material based on a wide bandgap aluminum nitride(AlN)that can withstand a high-temperature environment.Three unique AlN morphologies(rod-like,nest-like,and hexagonal plate-like)were synthesized by a direct nitridation method at 1400℃usingγ-AlOOH as a precursor.The gas-sensing performance shows that a hexagonal plate-like morphology exhibited p-type sensing behavior and showed good repeatability as well as the highest response(S=58.7)toward a 750 ppm leak of H2 gas at high temperature(500°C)compared with the rod-like and nest-like morphologies.Furthermore,the hexagonal plate-like morphology showed fast response and recovery times of 40 and 82 s,respectively.The surface facet of the hexagonal morphology of AlN might be energetically favorable for gas adsorption–desorption for enhanced hydrogen detection.展开更多
An experimental study on the heating of a mixture of aluminum and lithium hydroxide(LiOH) powders in a reductive bed under air atmosphere is reported. The formation of aluminum nitride(AlN) during this process was the...An experimental study on the heating of a mixture of aluminum and lithium hydroxide(LiOH) powders in a reductive bed under air atmosphere is reported. The formation of aluminum nitride(AlN) during this process was the focus of this study. The formation of Al N was achieved using LiOH as an additive and heating the sample in a resistance furnace in a specially designed double crucible within a bed of a mixture of coke and filamentous calcium. The temperature range of the reaction was between 700°C and 1100°C. The optimum temperature of 1100°C and the optimum Li OH amount(5wt%) required to achieve maximum yield were determined by powder X-ray diffraction(XRD) analysis. Scanning electron microscopy(SEM) micrographs clearly indicated the transformation of grain structures from rods(700°C) to cauliflower shapes(1100°C).展开更多
The anodizing oxidation process on 2024 aluminum alloy was researched in the mixed electrolyte with the composition of 30 g/L boric acid, 2 g/L sulfosalicylic acid and 8 g/L phosphate. The results reveal that the pre-...The anodizing oxidation process on 2024 aluminum alloy was researched in the mixed electrolyte with the composition of 30 g/L boric acid, 2 g/L sulfosalicylic acid and 8 g/L phosphate. The results reveal that the pre-treatment and the composition of the mixed electrolyte have influence on the properties of the films and the anodizing oxidation process. Under the condition of controlled potential, the anodizing oxidation current—time response curve displays "saddle" shape. First, the current density reaches a peak value of 8-20 A/dm2 and then decreases rapidly, finally maintains at 1-2 A/dm2. The film prepared in the mixed electrolyte is of porous-type with 20 nm in pore size and 500 μm-2 in porosity. Compared with the conventional anodic film obtained in sulfuric acid, the pore wall of the porous layer prepared in this work is not continuous, which seems to be deposited by small spherical grains. This porous structure of the anodic film may result from the characteristics of the mixed electrolyte and the special anodizing oxidation process. The surface analysis displays that the anodic film is amorphous and composed of O, Al, C, P, S, Si and no copper element is detected.展开更多
Nano cerium oxide films were applied on AA7020-T6 aluminum alloy and the effects of acetic acid concentration on the microstructure and electrochemical properties of the coated samples were investigated by using scann...Nano cerium oxide films were applied on AA7020-T6 aluminum alloy and the effects of acetic acid concentration on the microstructure and electrochemical properties of the coated samples were investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), and potentiodynamic polarization methods. It has been found that by increasing the acetic acid/CeCl3-7H2O molar ratio, high uniform and crack-free films with well-developed grains were obtained and grain sizes of the films decreased. Elimination of cracks and decreasing grain size of the nano cerium oxide films caused corrosion resistance to increase.展开更多
Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon...Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m ? 1·K? 1 versus 1.4 W·m? 1·K? 1). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electri-cal characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the appli-cations of SOI to high temperature conditions.展开更多
Thermal stabilities of diethylaluminum azide were studied by means of theoretical analysis and expriments.The results have shown that diethylaluminum and azid be heated to vigorous refluxing under vacuum(400 Pa) at te...Thermal stabilities of diethylaluminum azide were studied by means of theoretical analysis and expriments.The results have shown that diethylaluminum and azid be heated to vigorous refluxing under vacuum(400 Pa) at temperature as high as 420℃ without incident of explosion and decomposes smoothly during 460 ～580℃ to form nanometric particles of aluminum nitride in the aerosol synthesis reactor. A new way of preparing nanometric parties of aluminum nitrideis found.展开更多
Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position （MPCVD） technique. The N/C atomic ratio is close to the stoichiometric value 1.33 o...Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position （MPCVD） technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C3N4. The experimental X-ray diffraction spectra contain all the strong peaks of α-C3N4 and β -C3N4. The films are a mixture of α-C3N4 and β -C3N4. The observed Raman and FT- IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa.展开更多
TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were mea...TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were measured. The surface roughness of the TiN films diposited at –30 V and –80 V respectively and at different nitrogen gas pressure was measured also. The mass loss of TiN films deposited at 0 V, –30 V and –80 V respectively were analyzed in dry sand rubber wheel abrasive wear tests and wet ones in comparison with uncoated Al alloy and austenitic stainless steel (AISI 316L). It is revealed that the highest hardness of the TiN film is obtained at a bias voltage of –30 V and a N2 gas pressure of 0.5 Pa. The surface roughness of the film is larger at –80 V than that at –30 V and reduces as the increase of the N2 gas pressure. The mass loss of TiN-film coated 2A12 aluminum alloy is remarkably less than that of uncoated Al alloy and also that of AISI 316L, which indicates that the abrasive wear rate is greatly reduced by the application of TiN coating. TiN coating deposited by arc ion plating (AIP) technique on aluminum alloy can be a potential coating for machine parts requiring preciseness and lightness.展开更多
Aluminum Nitride films were grown on and Si (100) substrate by D.C. reactive magnetron sputtering at room temperature. Influence of sputter deposition time on properties of the AlN films was studied. Structural optica...Aluminum Nitride films were grown on and Si (100) substrate by D.C. reactive magnetron sputtering at room temperature. Influence of sputter deposition time on properties of the AlN films was studied. Structural optical and electrical properties of the film were investigated. XRD measurements showed the presence of hexagonal wurtzite structure. The optical reflectance spectra of the film were taken and the band gap calculated varied from 4.35 to 5.3 eV. Finally MIS capacitors were fabricated on silicon substrates and variation of dielectric parameter with deposition time was reported.展开更多
基金supported by the Global Frontier R&D Program (2013M3A6B1078874) on Center for Hybrid Interface Materials (HIM) funded by the Ministry of Science, ICT & Future Planning, Republic of Koreasupported by a grant from the Industrial R&D Program for Core Technology of Materials funded by the Ministry of Industry and Energy (10060331), Republic of Korea
文摘Titanium-aluminum-nitride(TiAlN) films were grown by plasma-enhanced atomic layer deposition(PEALD)on 316 L stainless steel at a deposition temperature of 200 °C. A supercycle, consisting of one AlN and ten TiN subcycles, was used to prepare TiAlN films with a chemical composition of Ti_(0.25)Al_(0.25)N_(0.50). The addition of AlN to TiN resulted in an increased electrical resistivity of TiAlN films of 2800 μΩ cm, compared with 475 μΩ cm of TiN films, mainly due to the high electrical resistivity of AlN and the amorphous structure of TiAlN. However, potentiostatic polarization measurements showed that amorphous TiAlN films exhibited excellent corrosion resistance with a corrosion current density of 0.12 μA/cm^2, about three times higher than that of TiN films, and about 12.5 times higher than that of 316 L stainless steel.
基金National Natural Science Foundation of China(No.52173059)。
文摘Among nitride fibers,aluminum nitride(AlN)fibers have been developed for various advanced applications due to their mechanical flexibility,high thermal conductivity,and excellent electrical insulation and chemical stability.This article presents an overview on the recent progress of AlN fibers.The properties of AlN,particularly the thermal conductivity of AlN in polymer matrix composites are introduced.Afterward,two major approaches,carbothermal reduction and nitriding polycrystalline alumina fiber,for the preparation of AlN fibers are discussed.The carbothermal reduction includes electrospinning,solution blow spinning,and chemical vapor deposition.Furthermore,some perspectives on the future directions for the preparation and application of fibrous AlN are highlighted.This review is expected to provide readers with valuable guidance on the preparation of AlN fibers and inspire researchers to explore more potential applications.
文摘Cubic C3N4 compound in the C-N thin films on Si and NaCl substrates was prepared by ion beam sputtering of a pure graphite target with discharge gas of pure N2. X-ray photoelectron spectroscopy indicated that nitrogen atoms combined with sp2- and sp3- coordinated C atoms in the film, respectively. X-ray diffraction, selected area electron diffraction and high-resolution electron microscopy were used to identify the cubic C3N4 phase. The results reconfirm the ab initio calculations on metastable structure in C-N
基金Project supported by the Natural Science Foundation of Beijing,China(Grant No.4072007)the National Natural Science Foundation of China(Grant Nos.60876006 and 60376007)
文摘Silver nanoparticle thin films with different average particle diameters are grown on silicon substrates. Boron nitride thin films are then deposited on the silver nanoparticle interlayers by radio frequency(RF) magnetron sputtering. The boron nitride thin films are characterized by Fourier transform infrared spectra. The average particle diameters of silver nanoparticle thin films are 126.6, 78.4, and 178.8 nm. The results show that the sizes of the silver nanoparticles have effects on the intensities of infrared spectra of boron nitride thin films. An enhanced infrared absorption is detected for boron nitride thin film grown on silver nanoparticle thin film. This result is helpful to study the growth mechanism of boron nitride thin film.
基金supported by the National Natural Science Foundation of China (Grants Nos 60876006 and 60376007)the Natural Science Foundation of Beijing (Grants No 4072007)
文摘The optical properties of hexagonal boron nitride(h-BN) thin films were studied in this paper.The films were characterized by Fourier transform infrared spectroscopy,UV-visible transmittance and reflection spectra.h-BN thin films with a wide optical band gap Eg(5.86 eV for the as-deposited film and 5.97 eV for the annealed film) approaching h-BN single crystal were successfully prepared by radio frequency(RF) bias magnetron sputtering and post-deposition annealing at 970 K.The optical absorption behaviour of h-BN films accords with the typical optical absorption characteristics of amorphous materials when fitting is made by the Urbach tail model.The annealed film shows satisfactory structure stability.However,high temperature still has a significant effect on the optical absorption properties,refractive index n,and optical conductivity σ of h-BN thin films.The blue-shift of the optical absorption edge and the increase of Eg probably result from stress relaxation in the film under high temperatures.In addition,it is found that the refractive index clearly exhibits different trends in the visible and ultraviolet regions.Previous calculational results of optical conductivity of h-BN films are confirmed in our experimental results.
文摘Diamond films were successfully synthesized on aluminum nitride(AlN) ceramic substrates by hot filament chemical vapor deposition(HFCVD) method. It is notices that the thermal conductivity of the diamond film/aluminum nitride ceramic(DF/AlN) composite has reached 2.04 W/cm·K, 73%greater than that of AlN ceramic. Compared with the measurement of scanning electron microscopy(SEM) and Raman spectroscopy, the influence of diamond films on the thermal conductivity of the composites was pointed out. The adhesion and the stresses of diamond films were also studied. The unusual stability and very good adhesion of diamond films on AlN ceramic substrates obtained are attributed to the formation of aluminum carbide.
文摘Under far from equilibrium conditions, the formation mechanism of solid can be studied in terms of the dynamic scaling theory. The roughness and dynamic scaling behavior of the Fe-N thin films were studied by atomic force microscopy and grazing incidence X-ray scattering. The results indicate that the roughness of the surface increases with increasing sputtering time during the course of magnetron sputtering, and the surface exhibits a fractal characteristic. While the Fe-N films prepared by compound technology—combining magnetron sputtering with plasma based ion implantation are not in agreement with the fractal theory.
文摘CN x /SiCN composite films were prepared on titanium ( Ti ) alloy substrates by Radio Frequency Plasma Enhanced Chemical Vapor Deposition ( RF\|PECVD ). As a buffer layer, SiCN ensured the adhesion of the CN x thin films on Ti substrates. X\|ray diffraction ( XRD) measurement revealed that the composite films possessed α\|C 3 N 4 structure. The microhardness of the films was 48 to 50 GPa. In order to test the characteristics of wear and corrosion resistances, we prepared Ti alloy samples with and without CN x /SiCN composite films. Also for strengthening the effect of wear and corrosion, the wear tests were carried out under high load (12 MPa) and in 0.9% NaCl solution. Results of the wear tests and the corrosive electrochemical measurements showed that the samples coated with CN x films had excellent characteristics of wear and corrosion resistances compared with Ti alloy substrate samples.
基金Project supported by the National Natural Science Foundation of China (Grant No. 50772096)the Educational Department of Zhejiang Province, China (Grant No. 20061365)
文摘Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasma-enhanced chemical vapour deposition. It was found that the introduction of O 2 into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B 2 H 6 concentration of 2.5% during film deposition, the critical O 2 concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4%, while that for the growth of cubic boron nitride was higher than 2.1%. Moreover, the infrared absorption peak observed at around 1230-1280 cm-1 , frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.
文摘AlN thin films have been grown on R((1-12) surface-cut)-Al2O3, SiO2-glass and C((001) surface-cut)-Al2O3 substrates, by using a reactive-RF-sputter-deposition method. X-ray diffraction (XRD) shows that AlN film has (110) orientation of wurtzite crystal structure for R-Al2O3 and (001) orientation for SiO2-glass and C-Al2O3 substrates. The film thickness was analyzed by Rutherford backscattering spectroscopy (RBS) and it appears that XRD intensity does not show a linear increase with the film thickness but a correlation with the stress, i.e., deviation of the lattice parameter of the film from that of bulk. The film composition and impurities have been analyzed by ion beam techniques. Effects of high-energy ion beams are briefly presented on atomic structure (whether stress relaxation occurs or not), surface morphology and optical properties.
基金This work was financially support by the Japan Society for the Promotion of Science(JSPS)Grant-in-Aid for Scientific Research(KAKENHI)(No.20H00297 and Innovative Areas No.JP16H06439)the Cooperative Research Program of Dynamic Alliance for Open Innovations Bridging Human,Environment and Materials in the“Network Joint Research Center for Materials and Devices”.
文摘Hydrogen is a promising renewable energy source for fossil-free transportation and electrical energy generation.However,leaking hydrogen in high-temperature production processes can cause an explosion,which endangers production workers and surrounding areas.To detect leaks early,we used a sensor material based on a wide bandgap aluminum nitride(AlN)that can withstand a high-temperature environment.Three unique AlN morphologies(rod-like,nest-like,and hexagonal plate-like)were synthesized by a direct nitridation method at 1400℃usingγ-AlOOH as a precursor.The gas-sensing performance shows that a hexagonal plate-like morphology exhibited p-type sensing behavior and showed good repeatability as well as the highest response(S=58.7)toward a 750 ppm leak of H2 gas at high temperature(500°C)compared with the rod-like and nest-like morphologies.Furthermore,the hexagonal plate-like morphology showed fast response and recovery times of 40 and 82 s,respectively.The surface facet of the hexagonal morphology of AlN might be energetically favorable for gas adsorption–desorption for enhanced hydrogen detection.
文摘An experimental study on the heating of a mixture of aluminum and lithium hydroxide(LiOH) powders in a reductive bed under air atmosphere is reported. The formation of aluminum nitride(AlN) during this process was the focus of this study. The formation of Al N was achieved using LiOH as an additive and heating the sample in a resistance furnace in a specially designed double crucible within a bed of a mixture of coke and filamentous calcium. The temperature range of the reaction was between 700°C and 1100°C. The optimum temperature of 1100°C and the optimum Li OH amount(5wt%) required to achieve maximum yield were determined by powder X-ray diffraction(XRD) analysis. Scanning electron microscopy(SEM) micrographs clearly indicated the transformation of grain structures from rods(700°C) to cauliflower shapes(1100°C).
基金Project(06JJ4005) supported by the Natural Science Foundation of Hunan Province, China
文摘The anodizing oxidation process on 2024 aluminum alloy was researched in the mixed electrolyte with the composition of 30 g/L boric acid, 2 g/L sulfosalicylic acid and 8 g/L phosphate. The results reveal that the pre-treatment and the composition of the mixed electrolyte have influence on the properties of the films and the anodizing oxidation process. Under the condition of controlled potential, the anodizing oxidation current—time response curve displays "saddle" shape. First, the current density reaches a peak value of 8-20 A/dm2 and then decreases rapidly, finally maintains at 1-2 A/dm2. The film prepared in the mixed electrolyte is of porous-type with 20 nm in pore size and 500 μm-2 in porosity. Compared with the conventional anodic film obtained in sulfuric acid, the pore wall of the porous layer prepared in this work is not continuous, which seems to be deposited by small spherical grains. This porous structure of the anodic film may result from the characteristics of the mixed electrolyte and the special anodizing oxidation process. The surface analysis displays that the anodic film is amorphous and composed of O, Al, C, P, S, Si and no copper element is detected.
文摘Nano cerium oxide films were applied on AA7020-T6 aluminum alloy and the effects of acetic acid concentration on the microstructure and electrochemical properties of the coated samples were investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), and potentiodynamic polarization methods. It has been found that by increasing the acetic acid/CeCl3-7H2O molar ratio, high uniform and crack-free films with well-developed grains were obtained and grain sizes of the films decreased. Elimination of cracks and decreasing grain size of the nano cerium oxide films caused corrosion resistance to increase.
基金Supported by the Special Funds for Major State Basic Research Projects (No.G2000036506)the National Natural Science Foundation of China (No. 60476006)
文摘Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advan-tages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal – oxide – silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (AlN), which has a thermal conductivity that is about 200 times higher than that of SiO2 (320 W·m ? 1·K? 1 versus 1.4 W·m? 1·K? 1). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electri-cal characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AlN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the appli-cations of SOI to high temperature conditions.
文摘Thermal stabilities of diethylaluminum azide were studied by means of theoretical analysis and expriments.The results have shown that diethylaluminum and azid be heated to vigorous refluxing under vacuum(400 Pa) at temperature as high as 420℃ without incident of explosion and decomposes smoothly during 460 ～580℃ to form nanometric particles of aluminum nitride in the aerosol synthesis reactor. A new way of preparing nanometric parties of aluminum nitrideis found.
文摘Carbon nitride thin films have been synthesized on polycrystalline Pt substrates using microwave plasma chemical vapor de- position （MPCVD） technique. The N/C atomic ratio is close to the stoichiometric value 1.33 of C3N4. The experimental X-ray diffraction spectra contain all the strong peaks of α-C3N4 and β -C3N4. The films are a mixture of α-C3N4 and β -C3N4. The observed Raman and FT- IR spectra support the existence of C-N covalent bond in carbon nitride compound. The bulk modulus detected by Nano II nanoindentor is up to 349 GPa.
文摘TiN films were deposited on 2A12 aluminum alloy by arc ion plating (AIP). The Vickers hardness of the films deposited at different bias voltages and different nitrogen gas pressures, and that of the substrate were measured. The surface roughness of the TiN films diposited at –30 V and –80 V respectively and at different nitrogen gas pressure was measured also. The mass loss of TiN films deposited at 0 V, –30 V and –80 V respectively were analyzed in dry sand rubber wheel abrasive wear tests and wet ones in comparison with uncoated Al alloy and austenitic stainless steel (AISI 316L). It is revealed that the highest hardness of the TiN film is obtained at a bias voltage of –30 V and a N2 gas pressure of 0.5 Pa. The surface roughness of the film is larger at –80 V than that at –30 V and reduces as the increase of the N2 gas pressure. The mass loss of TiN-film coated 2A12 aluminum alloy is remarkably less than that of uncoated Al alloy and also that of AISI 316L, which indicates that the abrasive wear rate is greatly reduced by the application of TiN coating. TiN coating deposited by arc ion plating (AIP) technique on aluminum alloy can be a potential coating for machine parts requiring preciseness and lightness.
文摘Aluminum Nitride films were grown on and Si (100) substrate by D.C. reactive magnetron sputtering at room temperature. Influence of sputter deposition time on properties of the AlN films was studied. Structural optical and electrical properties of the film were investigated. XRD measurements showed the presence of hexagonal wurtzite structure. The optical reflectance spectra of the film were taken and the band gap calculated varied from 4.35 to 5.3 eV. Finally MIS capacitors were fabricated on silicon substrates and variation of dielectric parameter with deposition time was reported.
