Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs)for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Alq3)-based organic light-emitting diodes(OLEDs)are presented in this work.The ...Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs)for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Alq3)-based organic light-emitting diodes(OLEDs)are presented in this work.The holeblocking properties of these Zn Pc layers slowed the hole injection process into the Alq3 emissive layer greatly and thus reduced the production of unstable cationic Alq3(Alq3^+)species.This led to the enhanced brightness and efficiency when compared with the corresponding properties of OLEDs based on the popular poly-(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)buffer layer.Furthermore,because of the high thermal and chemical stabilities of these Zn Pcs,a nonaqueous film fabrication process was realized together with improved charge balance in the OLEDs and enhanced OLED lifetimes.展开更多
Efficient white-polymer-light-emitting devices (WPLEDs) have been fabricated with a single emitting layer containing a hole-transporting host polymer,poly(N-vinylcarbzole),and an electron-transporting auxiliary,1,3-bi...Efficient white-polymer-light-emitting devices (WPLEDs) have been fabricated with a single emitting layer containing a hole-transporting host polymer,poly(N-vinylcarbzole),and an electron-transporting auxiliary,1,3-bis[(4-tert-butylphenyl)-1,3,4-oxadiazolyl]-phenylene,codoped with two phosphorescent dyes:Iridium(III)bis (2-(4,6-difluorophenyl)-pyridinato-N,C2') picolinate (FIrpic) and home-made Ir-G2 for blue and red emission,respectively.With the structure of ITO/PEDOT:PSS 4083(40 nm)/emission layer(80 nm)/Ba(4 nm)/Al(120 nm),the device showed a maximal luminous efficiency (LE) of 13.5 cd A-1(corresponding to an external quantum efficiency (EQE) of 6.8%),and a peak power efficiency (PE) of 6.5 lm W-1 at 6.0 V.Meanwhile,the device exhibited pure white emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.34,0.35) at a current density of 12 mA cm-2,which is very close to the equi-energy white point with CIE coordinates of (0.33,0.33).The device performance can be further optimized when more balanced hole/electron injection is achieved by incorporating a lower conducting type anode buffer layer (PEDOT:PSS) and incorporating poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorenene)-alt-2,7-(9,9-dioctyfluorene)] (PFN) as an electron injection layer at the cathode.The optimized device showed an LE of 24.6 cd A-1 (with an EQE of 14.1%),while the peak power efficiency reached 12.66 lm W-1.Moreover,the WPLEDs showed good electroluminescence (EL) stability over a wide range of operating current density and luminance.展开更多
A new static induction thyristor （SITH） with a strip anode region and p- buffer layer structure （SAP-B） has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly do...A new static induction thyristor （SITH） with a strip anode region and p- buffer layer structure （SAP-B） has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly doped n- regions embedded in the p＋-emitter. Compared with the conventional structure of a buffed-gate with a diffused source region （DSR buffed-gate）, besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-offtime decreased from 0.8 to 0.4μs.展开更多
基金Project supported by the Shenzhen Personal Maker Project,China(Grant No.GRCK2017082316173208)the Shenzhen Overseas High-level Talents Innovation Plan of Technical Innovation,China(Grant No.KQJSCX20180323140712012)the Special Funds for the Development of Strategic Emerging Industries in Shenzhen,China(Grant No.JCJY20170818154457845)
文摘Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs)for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Alq3)-based organic light-emitting diodes(OLEDs)are presented in this work.The holeblocking properties of these Zn Pc layers slowed the hole injection process into the Alq3 emissive layer greatly and thus reduced the production of unstable cationic Alq3(Alq3^+)species.This led to the enhanced brightness and efficiency when compared with the corresponding properties of OLEDs based on the popular poly-(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)buffer layer.Furthermore,because of the high thermal and chemical stabilities of these Zn Pcs,a nonaqueous film fabrication process was realized together with improved charge balance in the OLEDs and enhanced OLED lifetimes.
基金Fund of Ministry of Education of China (20090172120012)the National Basic Research Program of Chima (2009CB623602)+4 种基金the National Natural Science Foundation of China (60906032)the Fundamental Research Funds for the Central Universities for the financial support. Wong W.-Y. thanks the Hong Kong Research Grants Council (HKBU202709)the University Grants Committee of HKSAR,China (AoE/P-03/08)Hong Kong Baptist University (FRG2/08-09/111)the Croucher Foundation for the Croucher Senior Research Fellowship
文摘Efficient white-polymer-light-emitting devices (WPLEDs) have been fabricated with a single emitting layer containing a hole-transporting host polymer,poly(N-vinylcarbzole),and an electron-transporting auxiliary,1,3-bis[(4-tert-butylphenyl)-1,3,4-oxadiazolyl]-phenylene,codoped with two phosphorescent dyes:Iridium(III)bis (2-(4,6-difluorophenyl)-pyridinato-N,C2') picolinate (FIrpic) and home-made Ir-G2 for blue and red emission,respectively.With the structure of ITO/PEDOT:PSS 4083(40 nm)/emission layer(80 nm)/Ba(4 nm)/Al(120 nm),the device showed a maximal luminous efficiency (LE) of 13.5 cd A-1(corresponding to an external quantum efficiency (EQE) of 6.8%),and a peak power efficiency (PE) of 6.5 lm W-1 at 6.0 V.Meanwhile,the device exhibited pure white emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.34,0.35) at a current density of 12 mA cm-2,which is very close to the equi-energy white point with CIE coordinates of (0.33,0.33).The device performance can be further optimized when more balanced hole/electron injection is achieved by incorporating a lower conducting type anode buffer layer (PEDOT:PSS) and incorporating poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorenene)-alt-2,7-(9,9-dioctyfluorene)] (PFN) as an electron injection layer at the cathode.The optimized device showed an LE of 24.6 cd A-1 (with an EQE of 14.1%),while the peak power efficiency reached 12.66 lm W-1.Moreover,the WPLEDs showed good electroluminescence (EL) stability over a wide range of operating current density and luminance.
基金supported by the Scientific and Technological Development Plan of Lanzhou City of China(No.2009-1-1).
文摘A new static induction thyristor （SITH） with a strip anode region and p- buffer layer structure （SAP-B） has been successfully designed and fabricated. This structure is composed of a p- buffer layer and lightly doped n- regions embedded in the p＋-emitter. Compared with the conventional structure of a buffed-gate with a diffused source region （DSR buffed-gate）, besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-offtime decreased from 0.8 to 0.4μs.
