An algorithm has been introduced to calculate molecular bond polarizabilities of thiourea, which supply essential electronic information about the nonresonant Raman excited virtual states. The main dynamical behaviour...An algorithm has been introduced to calculate molecular bond polarizabilities of thiourea, which supply essential electronic information about the nonresonant Raman excited virtual states. The main dynamical behaviour of the excited virtual states of thiourea is that the Raman excited electrons tend to flow to the N-H bonds and C-N bonds from the S-C bonds because of the electronic repulsion effect. The difference in Raman excited electron relaxation time of thiourea under 514.5-nm and 325-nm excitations has been observed, which quantitatively shows that the Raman scattering process is dependent on the wavelength of the pumping laser. Finally, the distribution of the electrons at the final stage of relaxation is given out through the comparison between the bond electronic densities of the ground states and the bond polarizabilities after deexcitation.展开更多
The Raman mode intensities are used to extract the bond polarizabilities which are the indication of the charge disturbance/excitation of the Raman virtual state. A classical formula based on the electric and magnetic...The Raman mode intensities are used to extract the bond polarizabilities which are the indication of the charge disturbance/excitation of the Raman virtual state. A classical formula based on the electric and magnetic dipolar coupling among the charges on the atoms is developed which relates the charges and vibrational amplitudes of the atoms in a normal mode to the Raman optical activity(ROA) mode signatures. By fitting with the experimental ROA signatures, we are able to elucidate the scaling parameter which relates the bond polarizability to the electric charge. The result shows that around40% of the charges in pinane are involved in the Raman process under 532 nm laser excitation.展开更多
基金supported by the National Science and Technology Major Project (Grant No. ZX06901)
文摘An algorithm has been introduced to calculate molecular bond polarizabilities of thiourea, which supply essential electronic information about the nonresonant Raman excited virtual states. The main dynamical behaviour of the excited virtual states of thiourea is that the Raman excited electrons tend to flow to the N-H bonds and C-N bonds from the S-C bonds because of the electronic repulsion effect. The difference in Raman excited electron relaxation time of thiourea under 514.5-nm and 325-nm excitations has been observed, which quantitatively shows that the Raman scattering process is dependent on the wavelength of the pumping laser. Finally, the distribution of the electrons at the final stage of relaxation is given out through the comparison between the bond electronic densities of the ground states and the bond polarizabilities after deexcitation.
基金supported by the National Natural Science Foundation of China (Grant No. 21872097)Scientific Research Base Development Program of the Beijing Municipal Commission of Education。
文摘The Raman mode intensities are used to extract the bond polarizabilities which are the indication of the charge disturbance/excitation of the Raman virtual state. A classical formula based on the electric and magnetic dipolar coupling among the charges on the atoms is developed which relates the charges and vibrational amplitudes of the atoms in a normal mode to the Raman optical activity(ROA) mode signatures. By fitting with the experimental ROA signatures, we are able to elucidate the scaling parameter which relates the bond polarizability to the electric charge. The result shows that around40% of the charges in pinane are involved in the Raman process under 532 nm laser excitation.
