A carrier stored trench-gate bipolar transistor（CSTBT） with a p-floating layer（PF-CSTBT） is proposed. Due to the p-floating layer,the thick and highly doped carrier stored layer can be induced,and the conductivity...A carrier stored trench-gate bipolar transistor（CSTBT） with a p-floating layer（PF-CSTBT） is proposed. Due to the p-floating layer,the thick and highly doped carrier stored layer can be induced,and the conductivity modulation effect will be enhanced near the emitter.The accumulation resistance and the spreading resistance are reduced.The on-state loss will be much lower than in a conventional CSTBT.With the p-floating layer,the distribution of electric fields of the conventional IGBT is reformed,and the breakdown voltage is remarkably improved.The simulation results have shown that the forward voltage drop（VCE-on）） of the novel structure is reduced by 20%and 17%respectively, compared with the conventional trench IGBT（TIGBT） and CSTBT under the same conditions.Moreover,an increment of more than 100 V of the breakdown voltage is achieved without sacrificing the SCSOA（short circuit safety operation area） compared with the conventional TIGBT.展开更多
This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, know...This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, known as an enhanced planar IGBT of the 4500 V voltage class is investigated. With the adoption of a soft punch through （SPT） concept as the vertical structure and an enhanced planar concept as the top structure, signed as SPT＋ IGBT, the simulation results indicate the turn-off switching waveform of the 4500 V SPT＋ IGBT is soft and also realizes an improved trade-off relationship between on-state voltage drop （Von） and turn-off loss （Eoff） in comparison with the SPT IGBT. Attention is also paid to the influences caused by different carrier stored layer doping dose on static and dynamic performances, to optimize on-state and switching losses of SPT＋ IGBT.展开更多
A novel advanced soft punch through（SPT） IGBT signed as SPTC-IGBT is investigated.Static and dynamic characteristics are simulated based on the 1200 V device structure and adopted technology.Extensive research on th...A novel advanced soft punch through（SPT） IGBT signed as SPTC-IGBT is investigated.Static and dynamic characteristics are simulated based on the 1200 V device structure and adopted technology.Extensive research on the structure optimization of SPTC-IGBT is presented and discussed.Compared with the structure of conventional IGBT,SPTC-IGBT has a much lower collector-emitter saturation voltage and better switching characteristics.Therefore it is very suitable for applications blocking a voltage higher than 3000 V.In addition,due to the improvement of switching speed achieved by using a thinner chip,SPTC-IGBT is also very competitive in 1200 V and 1700 V applications.展开更多
文摘A carrier stored trench-gate bipolar transistor（CSTBT） with a p-floating layer（PF-CSTBT） is proposed. Due to the p-floating layer,the thick and highly doped carrier stored layer can be induced,and the conductivity modulation effect will be enhanced near the emitter.The accumulation resistance and the spreading resistance are reduced.The on-state loss will be much lower than in a conventional CSTBT.With the p-floating layer,the distribution of electric fields of the conventional IGBT is reformed,and the breakdown voltage is remarkably improved.The simulation results have shown that the forward voltage drop（VCE-on）） of the novel structure is reduced by 20%and 17%respectively, compared with the conventional trench IGBT（TIGBT） and CSTBT under the same conditions.Moreover,an increment of more than 100 V of the breakdown voltage is achieved without sacrificing the SCSOA（short circuit safety operation area） compared with the conventional TIGBT.
基金Project supported by the National Major Science and Technology Special Project of China(No.2011ZX02504-002)
文摘This paper concerns the need for improving the static and dynamic performance of the high voltage insulated gate bipolar transistor （HV IGBTs）. A novel structure with a carrier stored layer on the cathode side, known as an enhanced planar IGBT of the 4500 V voltage class is investigated. With the adoption of a soft punch through （SPT） concept as the vertical structure and an enhanced planar concept as the top structure, signed as SPT＋ IGBT, the simulation results indicate the turn-off switching waveform of the 4500 V SPT＋ IGBT is soft and also realizes an improved trade-off relationship between on-state voltage drop （Von） and turn-off loss （Eoff） in comparison with the SPT IGBT. Attention is also paid to the influences caused by different carrier stored layer doping dose on static and dynamic performances, to optimize on-state and switching losses of SPT＋ IGBT.
基金Project supported by the National Major Science and Technology Special Project of China (Nos.2011ZX02504-002,2011ZX02603-002)
文摘A novel advanced soft punch through（SPT） IGBT signed as SPTC-IGBT is investigated.Static and dynamic characteristics are simulated based on the 1200 V device structure and adopted technology.Extensive research on the structure optimization of SPTC-IGBT is presented and discussed.Compared with the structure of conventional IGBT,SPTC-IGBT has a much lower collector-emitter saturation voltage and better switching characteristics.Therefore it is very suitable for applications blocking a voltage higher than 3000 V.In addition,due to the improvement of switching speed achieved by using a thinner chip,SPTC-IGBT is also very competitive in 1200 V and 1700 V applications.
