In order to solve the problems of local maximum modulus extraction and threshold selection in the edge detection of finite resolution digital images, a new wavelet transform based adaptive dual threshold edge detec...In order to solve the problems of local maximum modulus extraction and threshold selection in the edge detection of finite resolution digital images, a new wavelet transform based adaptive dual threshold edge detection algorithm is proposed. The local maximum modulus is extracted by linear interpolation in wavelet domain. With the analysis on histogram, the image is filtered with an adaptive dual threshold method, which effectively detects the contours of small structures as well as the boundaries of large objects. A wavelet domain's propagation function is used to further select weak edges. Experimental results have shown the self adaptivity of the threshold to images having the same kind of histogram, and the efficiency even in noise tampered images.展开更多
As an important model for explaining the seismic rupture mode,the asperity model plays an important role in studying the stress accumulation of faults and the location of earthquake initiation.Taking Qilian-Haiyuan fa...As an important model for explaining the seismic rupture mode,the asperity model plays an important role in studying the stress accumulation of faults and the location of earthquake initiation.Taking Qilian-Haiyuan fault as an example,this paper combines geodetic method and b-value method to propose a multi-source observation data fusion detection method that accurately determines the asperity boundary named dual threshold search method.The method is based on the criterion that the b-value asperity boundary should be most consistent with the slip deficit rate asperity boundary.Then the optimal threshold combination of slip deficit rate and b-value is obtained through threshold search,which can be used to determine the boundary of the asperity.Based on this method,the study finds that there are four potential asperities on the Qilian-Haiyuan fault:two asperities(A1 and A2)are on the Tuolaishan segment and the other two asperities(B and C)are on Lenglongling segment and Jinqianghe segment,respectively.Among them,the lengths of asperities A1 and A2 on Tuolaishan segment are 17.0 km and 64.8 km,respectively.And the lower boundaries are 5.5 km and 15.5 km,respectively;The length of asperity B on Lenglongling segment is 70.7 km,and the lower boundary is 10.2 km.The length of asperity C on Jinqianghe segment is 42.3 km,and the lower boundary is 8.3 km.展开更多
In this paper, we consider the dual of the generalized Erlang (n) risk model under a threshold dividend strategy. We derive an integrodifferential equation satisfied by the expectation of the discounted dividends unti...In this paper, we consider the dual of the generalized Erlang (n) risk model under a threshold dividend strategy. We derive an integrodifferential equation satisfied by the expectation of the discounted dividends until ruin. The case when profits follow an exponential distribution is solved.展开更多
SEM microfractography of near-threshold fatigue crack propagation were carried out in the dual-phase steels of 3 martensite morphologies and 6 volume fractions of martensite (V_m). All of them are featured by cyclic c...SEM microfractography of near-threshold fatigue crack propagation were carried out in the dual-phase steels of 3 martensite morphologies and 6 volume fractions of martensite (V_m). All of them are featured by cyclic cleavage characteristics in near-threshold region,i.e.,main- ly controlled by mode Ⅱ stress.In the higher ΔK regions,the fracture surfaces are character- ized by mixed modes including cyclic cleavage facets,two types of secondary cracks and striations,etc..The roughness-induced crack closure of fracture surface is attributed primarily to extreme high fatigue crack growth threshold values.展开更多
In this paper, we consider the dual risk model in which periodic taxation are paid according to a loss-carry-forward system and dividends are paid under a threshold strategy. We give an analytical approach to derive t...In this paper, we consider the dual risk model in which periodic taxation are paid according to a loss-carry-forward system and dividends are paid under a threshold strategy. We give an analytical approach to derive the expression of gδ(u) (i.e. the Laplace transform of the first upper exit time). We discuss the expected discounted tax payments for this model and obtain its corresponding integro-differential equations. Finally, for Erlang (2) inter-innovation distribution, closedform expressions for the expected discounted tax payments are given.展开更多
An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented...An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.展开更多
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor ...Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor （PMOSFET）, analytical expressions of the threshold voltages for buried channel and surface channel are presented. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel （compressive strained SiGe） than in the surface channel （tensile strained Si）, because the hole mobility in the buried channel is higher than that in the surface channel. Thus they offer a good accuracy as compared with the results of device simulator ISE. With this model, the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted, such as Ge fraction, layer thickness, and doping concentration. This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si1-yGey metal-oxide-semiconductor field-effect transistor （MOSFET） designs.展开更多
文摘In order to solve the problems of local maximum modulus extraction and threshold selection in the edge detection of finite resolution digital images, a new wavelet transform based adaptive dual threshold edge detection algorithm is proposed. The local maximum modulus is extracted by linear interpolation in wavelet domain. With the analysis on histogram, the image is filtered with an adaptive dual threshold method, which effectively detects the contours of small structures as well as the boundaries of large objects. A wavelet domain's propagation function is used to further select weak edges. Experimental results have shown the self adaptivity of the threshold to images having the same kind of histogram, and the efficiency even in noise tampered images.
基金This work is supported by the National Key Research and Development Plan of China under Grants No.2018YFC1503604the National Natural Science Foundation of China under Grants No.41721003,No.42074007the Key Laboratory of Geospace Environment and Geodesy,Ministry of Education,Wuhan University,No.19-01-08。
文摘As an important model for explaining the seismic rupture mode,the asperity model plays an important role in studying the stress accumulation of faults and the location of earthquake initiation.Taking Qilian-Haiyuan fault as an example,this paper combines geodetic method and b-value method to propose a multi-source observation data fusion detection method that accurately determines the asperity boundary named dual threshold search method.The method is based on the criterion that the b-value asperity boundary should be most consistent with the slip deficit rate asperity boundary.Then the optimal threshold combination of slip deficit rate and b-value is obtained through threshold search,which can be used to determine the boundary of the asperity.Based on this method,the study finds that there are four potential asperities on the Qilian-Haiyuan fault:two asperities(A1 and A2)are on the Tuolaishan segment and the other two asperities(B and C)are on Lenglongling segment and Jinqianghe segment,respectively.Among them,the lengths of asperities A1 and A2 on Tuolaishan segment are 17.0 km and 64.8 km,respectively.And the lower boundaries are 5.5 km and 15.5 km,respectively;The length of asperity B on Lenglongling segment is 70.7 km,and the lower boundary is 10.2 km.The length of asperity C on Jinqianghe segment is 42.3 km,and the lower boundary is 8.3 km.
文摘In this paper, we consider the dual of the generalized Erlang (n) risk model under a threshold dividend strategy. We derive an integrodifferential equation satisfied by the expectation of the discounted dividends until ruin. The case when profits follow an exponential distribution is solved.
文摘SEM microfractography of near-threshold fatigue crack propagation were carried out in the dual-phase steels of 3 martensite morphologies and 6 volume fractions of martensite (V_m). All of them are featured by cyclic cleavage characteristics in near-threshold region,i.e.,main- ly controlled by mode Ⅱ stress.In the higher ΔK regions,the fracture surfaces are character- ized by mixed modes including cyclic cleavage facets,two types of secondary cracks and striations,etc..The roughness-induced crack closure of fracture surface is attributed primarily to extreme high fatigue crack growth threshold values.
文摘In this paper, we consider the dual risk model in which periodic taxation are paid according to a loss-carry-forward system and dividends are paid under a threshold strategy. We give an analytical approach to derive the expression of gδ(u) (i.e. the Laplace transform of the first upper exit time). We discuss the expected discounted tax payments for this model and obtain its corresponding integro-differential equations. Finally, for Erlang (2) inter-innovation distribution, closedform expressions for the expected discounted tax payments are given.
文摘An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain （DMG-LDD） metal-oxide-semiconductor field-effect transistor （MOSFET） is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects （SCEs） and the drain induced barrier lowering （DIBL） more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLASTM 2D device simulator.
基金Project supported by the National Defence Pre-research Foundation of China (Grant Nos. 51308040203,9140A08060407DZ0103,and 6139801)
文摘Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGex/relaxd Si1-yGey（s-Si/s-SiGe/Si1-yGey） metal-oxide-semiconductor field-effect transistor （PMOSFET）, analytical expressions of the threshold voltages for buried channel and surface channel are presented. And the maximum allowed thickness of s-Si is given, which can ensure that the strong inversion appears earlier in the buried channel （compressive strained SiGe） than in the surface channel （tensile strained Si）, because the hole mobility in the buried channel is higher than that in the surface channel. Thus they offer a good accuracy as compared with the results of device simulator ISE. With this model, the variations of threshold voltage and maximum allowed thickness of s-Si with design parameters can be predicted, such as Ge fraction, layer thickness, and doping concentration. This model can serve as a useful tool for p-channel s-Si/s-SiGe/Si1-yGey metal-oxide-semiconductor field-effect transistor （MOSFET） designs.
