Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status,which offers another degree of freedom in infrared remote sensing.However,to ...Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status,which offers another degree of freedom in infrared remote sensing.However,to scale up by monolithically integrating grating-based polarizers onto a focal plane array(FPA)of infrared detectors,fundamental technical obstacles must be overcome,including reductions of the extinction ratio by the misalignment between the polarizer and the detector,grating line width fluctuations,the line edge roughness,etc.This paper reports the authors’latest achievements in overcoming those problems by solving key technical issues regarding the integration of large-scale polarizers onto the chips of FPAs with individual indium gallium arsenide/indium phosphide(In Ga As/In P)sensors as the basic building blocks.Polarimetric and photovoltaic chips with divisions of the focal plane of 540×4 pixels and 320×256 superpixels have been successfully manufactured.Polarimetric imaging with enhanced contrast has been demonstrated.The progress made in this work has opened up a broad avenue toward industrialization of high quality polarimetric imaging in infrared wavelengths.展开更多
A high injection, large dynamic range, stable detector bias, small area and low power consumption CMOS readout circuit with background current suppression and correlated double sampling (CDS) for a high-resolution inf...A high injection, large dynamic range, stable detector bias, small area and low power consumption CMOS readout circuit with background current suppression and correlated double sampling (CDS) for a high-resolution infrared focal plane array applications is proposed. The detector bias error in this structure is less than 0.1 mV. The input resistance is ideally zero, which is important to obtain high injection efficiency. Unit-cell occupies 10 μm× 15 μm area and consumes less than 0.4 mW power. Charge storage capacity is 3 × 108 electrons. The function and performance of the proposed readout circuit have been verified by experimental results.展开更多
On the basis of opto-mechanical effect and micro electromechanical system(MEMS)technology,a novel substrate-free focal plane array(FPA)with the thermal isolated structure for uncooled infrared imaging is developed,eve...On the basis of opto-mechanical effect and micro electromechanical system(MEMS)technology,a novel substrate-free focal plane array(FPA)with the thermal isolated structure for uncooled infrared imaging is developed,even as alternate evaporated Au on SiN cantilever is used for thermal isolation.A human thermal image is obtained successfully by using the infrared imaging system composed of the FPA and optical detecting system.The experiment results show that the realization of thermal isolation structure in substrate-free FPA increases the temperature rise of the deflecting leg effectively,whereas the noise equivalent temperature difference(NETD)is about 200 mK.展开更多
The main characteristics of millimeter-wave(MM-wave)image detector were simulated by means of accurate numerical modeling of thermophysical processes in a metamaterial MM-to-IR converter.The converter represents a mul...The main characteristics of millimeter-wave(MM-wave)image detector were simulated by means of accurate numerical modeling of thermophysical processes in a metamaterial MM-to-IR converter.The converter represents a multilayer structure consisting of an ultra thin resonant metamaterial absorber and a perfect emissive layer.The absorber consists of a dielectric self-supporting film that is metallized from both sides.A micropattern is fabricated from one side.Resonant absorption of the MM waves induces the converter heating that yields enhancement of IR emission from the emissive layer.IR emission is detected by IR camera.In this contribution an accurate numerical model for simulation of the thermal processes in the converter structure was created by using COMSOL Multiphysics software.The simulation results are in a good agreement with experimental results that validates the model.The simulation shows that the real-time operation is provided for the converter thickness less than 3µm and time response can be improved by decreasing of the converter thickness.The energy conversion efficiency of MM waves into IR radiation is over 80%.The converter temperature increase is a linear function of a MM-wave radiation power within three orders of the dynamic range.The blooming effect and ways of its reducing are also discussed.The model allows us to choose the ways of converter structure optimization and improvement of image detector parameters.展开更多
基金financially supported by the following projects:Open project of SITP(Project Number:IIMDKFJJ-18-09)National Natural Science Foundation of China(Project Number:61927820)+2 种基金The STCSM2019-11-20 funding(Project Number:19142202700)National Natural Science Foundation of China(Project Number:NSF No.U1732104)Zhejiang Lab’s International Talent Fund for Young Professionals。
文摘Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status,which offers another degree of freedom in infrared remote sensing.However,to scale up by monolithically integrating grating-based polarizers onto a focal plane array(FPA)of infrared detectors,fundamental technical obstacles must be overcome,including reductions of the extinction ratio by the misalignment between the polarizer and the detector,grating line width fluctuations,the line edge roughness,etc.This paper reports the authors’latest achievements in overcoming those problems by solving key technical issues regarding the integration of large-scale polarizers onto the chips of FPAs with individual indium gallium arsenide/indium phosphide(In Ga As/In P)sensors as the basic building blocks.Polarimetric and photovoltaic chips with divisions of the focal plane of 540×4 pixels and 320×256 superpixels have been successfully manufactured.Polarimetric imaging with enhanced contrast has been demonstrated.The progress made in this work has opened up a broad avenue toward industrialization of high quality polarimetric imaging in infrared wavelengths.
文摘A high injection, large dynamic range, stable detector bias, small area and low power consumption CMOS readout circuit with background current suppression and correlated double sampling (CDS) for a high-resolution infrared focal plane array applications is proposed. The detector bias error in this structure is less than 0.1 mV. The input resistance is ideally zero, which is important to obtain high injection efficiency. Unit-cell occupies 10 μm× 15 μm area and consumes less than 0.4 mW power. Charge storage capacity is 3 × 108 electrons. The function and performance of the proposed readout circuit have been verified by experimental results.
基金supported by the National Natural Science Foundation of China(Grant No.60236010)the National Technology Research Development Program of China(No.2005AA404210).
文摘On the basis of opto-mechanical effect and micro electromechanical system(MEMS)technology,a novel substrate-free focal plane array(FPA)with the thermal isolated structure for uncooled infrared imaging is developed,even as alternate evaporated Au on SiN cantilever is used for thermal isolation.A human thermal image is obtained successfully by using the infrared imaging system composed of the FPA and optical detecting system.The experiment results show that the realization of thermal isolation structure in substrate-free FPA increases the temperature rise of the deflecting leg effectively,whereas the noise equivalent temperature difference(NETD)is about 200 mK.
文摘The main characteristics of millimeter-wave(MM-wave)image detector were simulated by means of accurate numerical modeling of thermophysical processes in a metamaterial MM-to-IR converter.The converter represents a multilayer structure consisting of an ultra thin resonant metamaterial absorber and a perfect emissive layer.The absorber consists of a dielectric self-supporting film that is metallized from both sides.A micropattern is fabricated from one side.Resonant absorption of the MM waves induces the converter heating that yields enhancement of IR emission from the emissive layer.IR emission is detected by IR camera.In this contribution an accurate numerical model for simulation of the thermal processes in the converter structure was created by using COMSOL Multiphysics software.The simulation results are in a good agreement with experimental results that validates the model.The simulation shows that the real-time operation is provided for the converter thickness less than 3µm and time response can be improved by decreasing of the converter thickness.The energy conversion efficiency of MM waves into IR radiation is over 80%.The converter temperature increase is a linear function of a MM-wave radiation power within three orders of the dynamic range.The blooming effect and ways of its reducing are also discussed.The model allows us to choose the ways of converter structure optimization and improvement of image detector parameters.
