The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a ...The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/（V-s） and -4.6 V, respectively.展开更多
We report a simple hole-blocking material （biphenyl-3,3＇-diyl）bis（diphenylphosphine oxide） （BiPh-m-BiDPO） based on our recent advance. The bis（phosphine oxide） compound shows HOMO/LUMO levels of ∽-6.71/- 2.5...We report a simple hole-blocking material （biphenyl-3,3＇-diyl）bis（diphenylphosphine oxide） （BiPh-m-BiDPO） based on our recent advance. The bis（phosphine oxide） compound shows HOMO/LUMO levels of ∽-6.71/- 2.51 eV. Its phosphorescent spectrum in a solid film features two major emission bands peaking at 2.69 and 2.4eV, corresponding to 0-0 and 01 vibronic transitions, respectively. The measurement of the electron-only devices reveals that BiPh-m-BiDPO possesses electron mobility of 2.28 × 10^-9-3.22× 10^-8cm2 V-1s-1 at E = 2- 5 × 10^5 V/cm. The characterization of the sky blue fluorescent and red phosphorescent pin organic light-emitting diodes （OLEDs） utilizing BiPh-m-BiDPO as the hole blocker shows that its shallow LUMO level as well as the low electron mobility affects significantly the power efficiency and hence operational stability, relative to the luminous efficiency, especially at high luminance. In combination with our recent results, the present study provides an indepth insight on the molecular structure-property correlation in the organic phosphinyl-containing hole-blocking materials.展开更多
基金supported by the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412)the National Natural Science Foundation of China (Grant Nos 10774013 and 10804006)+4 种基金the Excellent Doctor’s Science and Technology Innovation Foundation of Beijing Jiaotong University (Grant No 48024)the Foundation of Beijing Jiaotong University (Grant No 2005SM057)the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031)the Beijing NOVA program (Grant No 2007A024)Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars,State Education Ministry
文摘The properties of top-contact organic thin-film transistors （TC-OTFTs） using ultra-thin 2, 9-dimethyl-4, 7- diphenyl-1, 10-phenanthroline （BCP） as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers arc limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = --20 V showed excellent hole mobility μFE and threshold voltage VTH of 0.58 cm^2/（V-s） and -4.6 V, respectively.
基金Supported by the National Natural Science Foundation of China under Grant No U1301243the National Key Research and Development Program of China under Grant No 2016YFB0400701
文摘We report a simple hole-blocking material （biphenyl-3,3＇-diyl）bis（diphenylphosphine oxide） （BiPh-m-BiDPO） based on our recent advance. The bis（phosphine oxide） compound shows HOMO/LUMO levels of ∽-6.71/- 2.51 eV. Its phosphorescent spectrum in a solid film features two major emission bands peaking at 2.69 and 2.4eV, corresponding to 0-0 and 01 vibronic transitions, respectively. The measurement of the electron-only devices reveals that BiPh-m-BiDPO possesses electron mobility of 2.28 × 10^-9-3.22× 10^-8cm2 V-1s-1 at E = 2- 5 × 10^5 V/cm. The characterization of the sky blue fluorescent and red phosphorescent pin organic light-emitting diodes （OLEDs） utilizing BiPh-m-BiDPO as the hole blocker shows that its shallow LUMO level as well as the low electron mobility affects significantly the power efficiency and hence operational stability, relative to the luminous efficiency, especially at high luminance. In combination with our recent results, the present study provides an indepth insight on the molecular structure-property correlation in the organic phosphinyl-containing hole-blocking materials.
