An experimental setup was built up to carry out radio frequency (RF) inductively coupled plasma (ICP) and dielectric barrier discharge (DBD), and to depict the optical emission spectra (OES) of the discharges. OES fro...An experimental setup was built up to carry out radio frequency (RF) inductively coupled plasma (ICP) and dielectric barrier discharge (DBD), and to depict the optical emission spectra (OES) of the discharges. OES from argon ICP and DBD plasmas in visible and near ultraviolet region were measured. For argon ICP, the higher RF power input (higher than 500 W for our machine), the higher degree of argon plasma ionization. But that doesn't mean a higher mean electron energy. With the increase in the power input, the mean electron energy increases slightly, whereas the density of electron increases apparently On the contrary, argon DBD discharge behaves in the manner of a pulsed DC discharge on optical emission spectroscopy and V-I characteristics. DBD current is composed of a series of pulses equally spaced in temporal domain. The Kinetics of DBD emission strength is mainly governed by the frequency of the current pulse.展开更多
The ion line of 434.8 nm and atom line of 419.8 nm of Ar plasma produced by an inductively coupled plasma （ICP） were measured by optical emission spectroscopy and the influences from the working gas pressure, radio-...The ion line of 434.8 nm and atom line of 419.8 nm of Ar plasma produced by an inductively coupled plasma （ICP） were measured by optical emission spectroscopy and the influences from the working gas pressure, radio-frequency （RF） power and different positions in the discharge chamber on the line intensities were investigated in this study. It was found that the intensity of Ar atom line increased firstly and then saturated with the increase of the pressure. The line intensity of Ar^＋, on the other hand, reached a maximum value and then decreased along with the pressure. The intensity of the line in an RF discharge also demonstrated a jumping mode and a hysteresis phenomenon with the RF power. When the RF power increased to 400 W, the discharge jumped from the E-mode to the H-mode where the line intensity of Ar atom demonstrated a sudden increase, while the intensity of Ar^＋ ion only changed slightly. If the RF power decreased from a high value, e.g., 1000 W, the discharge would jump from the H-mode back to the E-mode at a power of 300 W. At this time the intensities of Ar and Ar^＋ lines would also decrease sharply. It was also noticed in this paper that the intensity of the ion line depended on the detective location in the chamber, namely at the bottom of the chamber the line was more intense than that in the middle of the chamber, but less intense than at the top, which is considered to be related to the capacitance coupling ability of the ICP plasma in different discharge areas.展开更多
Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） wer...Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy （OES） was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency （LF） source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films＇ deposition, and reduce surface residues.展开更多
Low pressure argon dual-frequency （DF） capacitively coupled plasma （CCP） is generated by using different frequency configurations, such as 13.56/2, 27/2, 41/2, and 60/2 MHz. Characteristics of the plasma are inves...Low pressure argon dual-frequency （DF） capacitively coupled plasma （CCP） is generated by using different frequency configurations, such as 13.56/2, 27/2, 41/2, and 60/2 MHz. Characteristics of the plasma are investigated by using a floating double electrical probe and optical emission spectroscopy （OES）. It is shown that in the DF-CCPs, the electron temperature Te decreases with the increase in exciting frequency, while the onset of 2 MHz induces a sudden increase in Te and the electron density increases basically with the increase in low frequency （LF） power. The intensity of 750.4 nm emission line increases with the LF power in the case of 13.56/2 MHz, while different tendencies of line intensity with the LF power appear for other configurations. The reason for this is also discussed.展开更多
This paper proposes a simple collisional-radiative model to characterise capacitively coupled argon plasmas driven by conventional radio frequency in combination with optical emission spectroscopy and Langmuir probe m...This paper proposes a simple collisional-radiative model to characterise capacitively coupled argon plasmas driven by conventional radio frequency in combination with optical emission spectroscopy and Langmuir probe measurements. Two major processes are considered in this model, electron-impact excitation and the spontaneous radiative decay. The diffusion loss term, which is found to be important for the two metastable states （4s[3/2]2, 4s＇[1/2]0）, is also taken into account. Behaviours of representative metastable and radiative states are discussed. Two emission lines （located at 696.5 nm and 750.4 nm） are selected and intensities are measured to obtain populated densities of the corresponding radiative states in the argon plasma. The calculated results agree well with that measured by Langmuir probe, indicating that the current model combined with optical emission spectroscopy is a candidate tool for electron density and temperature measurement in radio frequency capacitively coupled discharges.展开更多
In this work,we investigated the discharge characteristics and heating mechanisms of argon helicon plasma in different wave coupled modes with and without blue core.Spatially resolved spectroscopy and emission intensi...In this work,we investigated the discharge characteristics and heating mechanisms of argon helicon plasma in different wave coupled modes with and without blue core.Spatially resolved spectroscopy and emission intensity of argon atom and ion lines were measured via local optical emission spectroscopy,and electron density was measured experimentally by an RFcompensated Langmuir probe.The relation between the emission intensity and the electron density was obtained and the wavenumbers of helicon and’Trivelpiece-Gould’(TG)waves were calculated by solving the dispersion relation in wave modes.The results show that at least two distinct wave coupled modes appear in argon helicon plasma at increasing RF power,i.e.blue core(or BC)mode with a significant bright core of blue lights and a normal wave(NW)mode without blue core.The emission intensity of atom line 750.5 nm(lArⅠ750.5nm)is related to the electron density and tends to be saturated in wave coupled modes due to the neutral depletion,while the intensity of ion line 480.6 nm(IArⅡ480.6nm)is a function of the electron density and temperature,and increases dramatically as the RF power is increased.Theoretical analysis shows that TG waves are strongly damped at the plasma edge in NW and/or BC modes,while helicon waves are the dominant mechanism of power deposition or central heating of electrons in both modes.The formation of BC column mainly depends on the enhanced central electron heating by helicon waves rather than TG waves since the excitation of TG waves would be suppressed in this special anti-resonance region.展开更多
基金This work is supported by the National Science Foundation of China No.19835030.
文摘An experimental setup was built up to carry out radio frequency (RF) inductively coupled plasma (ICP) and dielectric barrier discharge (DBD), and to depict the optical emission spectra (OES) of the discharges. OES from argon ICP and DBD plasmas in visible and near ultraviolet region were measured. For argon ICP, the higher RF power input (higher than 500 W for our machine), the higher degree of argon plasma ionization. But that doesn't mean a higher mean electron energy. With the increase in the power input, the mean electron energy increases slightly, whereas the density of electron increases apparently On the contrary, argon DBD discharge behaves in the manner of a pulsed DC discharge on optical emission spectroscopy and V-I characteristics. DBD current is composed of a series of pulses equally spaced in temporal domain. The Kinetics of DBD emission strength is mainly governed by the frequency of the current pulse.
基金supported by National Natural Science Foundation of China (Nos.50277003,10505005)
文摘The ion line of 434.8 nm and atom line of 419.8 nm of Ar plasma produced by an inductively coupled plasma （ICP） were measured by optical emission spectroscopy and the influences from the working gas pressure, radio-frequency （RF） power and different positions in the discharge chamber on the line intensities were investigated in this study. It was found that the intensity of Ar atom line increased firstly and then saturated with the increase of the pressure. The line intensity of Ar^＋, on the other hand, reached a maximum value and then decreased along with the pressure. The intensity of the line in an RF discharge also demonstrated a jumping mode and a hysteresis phenomenon with the RF power. When the RF power increased to 400 W, the discharge jumped from the E-mode to the H-mode where the line intensity of Ar atom demonstrated a sudden increase, while the intensity of Ar^＋ ion only changed slightly. If the RF power decreased from a high value, e.g., 1000 W, the discharge would jump from the H-mode back to the E-mode at a power of 300 W. At this time the intensities of Ar and Ar^＋ lines would also decrease sharply. It was also noticed in this paper that the intensity of the ion line depended on the detective location in the chamber, namely at the bottom of the chamber the line was more intense than that in the middle of the chamber, but less intense than at the top, which is considered to be related to the capacitance coupling ability of the ICP plasma in different discharge areas.
基金supported by National Natural Science Foundation of China （Nos. 10975105, 11275136, 10975106, 11175126, 11204266 and 11075114） the National Magnetic Confinement Fusion Science Program of China （Nos. 2010GB106000, 2010GB106009）, the Open Project of State Key Laboratory of Functional Materials for Information and Qing Lan Project, a Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions and the Program for graduates Research ＆ Innovation in University of Jiangsu Province, China （No. CX10B-031Z）
文摘Dry etching of 6H silicon carbide （6H-SiC） wafers in a C4Fs/Ar dual-frequency capacitively coupled plasma （DF-CCP） was investigated. Atomic force microscopy （AFM） and X-ray photoelectron spectroscopy （XPS） were used to measure the SiC surface structure and compositions, respectively. Optical emission spectroscopy （OES） was used to measure the relative concentration of F radicals in the plasma. It was found that the roughness of the etched SiC surface and the etching rate are directly related to the power of low-frequency （LF） source. At lower LF power, a smaller surface roughness and a lower etching rate are obtained due to weak bombardment of low energy ions on the SiC wafers. At higher LF power the etching rate can be efficiently increased, but the surface roughness increases too. Compared with other plasma dry etching methods, the DF-CCP can effectively inhibit CχFγ films＇ deposition, and reduce surface residues.
基金supported by National Natural Science Foundation of China (Nos. 10635010, 10775103)
文摘Low pressure argon dual-frequency （DF） capacitively coupled plasma （CCP） is generated by using different frequency configurations, such as 13.56/2, 27/2, 41/2, and 60/2 MHz. Characteristics of the plasma are investigated by using a floating double electrical probe and optical emission spectroscopy （OES）. It is shown that in the DF-CCPs, the electron temperature Te decreases with the increase in exciting frequency, while the onset of 2 MHz induces a sudden increase in Te and the electron density increases basically with the increase in low frequency （LF） power. The intensity of 750.4 nm emission line increases with the LF power in the case of 13.56/2 MHz, while different tendencies of line intensity with the LF power appear for other configurations. The reason for this is also discussed.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.10635010 and 10775103)
文摘This paper proposes a simple collisional-radiative model to characterise capacitively coupled argon plasmas driven by conventional radio frequency in combination with optical emission spectroscopy and Langmuir probe measurements. Two major processes are considered in this model, electron-impact excitation and the spontaneous radiative decay. The diffusion loss term, which is found to be important for the two metastable states （4s[3/2]2, 4s＇[1/2]0）, is also taken into account. Behaviours of representative metastable and radiative states are discussed. Two emission lines （located at 696.5 nm and 750.4 nm） are selected and intensities are measured to obtain populated densities of the corresponding radiative states in the argon plasma. The calculated results agree well with that measured by Langmuir probe, indicating that the current model combined with optical emission spectroscopy is a candidate tool for electron density and temperature measurement in radio frequency capacitively coupled discharges.
基金National Natural Science Foundation of China(No.11975047)。
文摘In this work,we investigated the discharge characteristics and heating mechanisms of argon helicon plasma in different wave coupled modes with and without blue core.Spatially resolved spectroscopy and emission intensity of argon atom and ion lines were measured via local optical emission spectroscopy,and electron density was measured experimentally by an RFcompensated Langmuir probe.The relation between the emission intensity and the electron density was obtained and the wavenumbers of helicon and’Trivelpiece-Gould’(TG)waves were calculated by solving the dispersion relation in wave modes.The results show that at least two distinct wave coupled modes appear in argon helicon plasma at increasing RF power,i.e.blue core(or BC)mode with a significant bright core of blue lights and a normal wave(NW)mode without blue core.The emission intensity of atom line 750.5 nm(lArⅠ750.5nm)is related to the electron density and tends to be saturated in wave coupled modes due to the neutral depletion,while the intensity of ion line 480.6 nm(IArⅡ480.6nm)is a function of the electron density and temperature,and increases dramatically as the RF power is increased.Theoretical analysis shows that TG waves are strongly damped at the plasma edge in NW and/or BC modes,while helicon waves are the dominant mechanism of power deposition or central heating of electrons in both modes.The formation of BC column mainly depends on the enhanced central electron heating by helicon waves rather than TG waves since the excitation of TG waves would be suppressed in this special anti-resonance region.
