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Seismic sedimentology of conglomeratic sandbodies in lower third member of Shahejie Formation (Palaeogene) in Shengtuo area, East China 被引量:2
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作者 袁勇 张金亮 +2 位作者 李存磊 孟宁宁 李岩 《Journal of Central South University》 SCIE EI CAS 2014年第12期4630-4639,共10页
The sand-conglomerate fans are the major depositional systems in the lower third member of Shahejie Formation in Shengtuo area, which formed in the deep lacustrine environment characterized by steep slope gradient, ne... The sand-conglomerate fans are the major depositional systems in the lower third member of Shahejie Formation in Shengtuo area, which formed in the deep lacustrine environment characterized by steep slope gradient, near sources and intensive tectonic activity. This work was focused on the sedimentary feature of the glutenite segment to conduct the seismic sedimentology research. The near-shore subaqueous fans and its relative gravity channel and slump turbidite fan depositions were identified according to observation and description of cores combining with the numerous data of seismic and logging. Then, the depositional model was built depending on the analysis of palaeogeomorphology. The seismic attributes which are related to the hydrocarbon but relative independent were chosen to conduct the analysis, the reservoir area of the glutenite segment was found performing a distribution where the amplitude value is relatively higher, and finally the RMS amplitude attribute was chosen to conduct the attribute predicting. At the same time, the horizontal distribution of the sedimentary facies was analyzed qualitatively. At last, the sparse spike inversion method was used to conduct the acoustic impedance inversion, and the inversion result can distinguish glutenite reservoir which is greater than 5 m. This method quantitatively characterizes the distribution area of the favorable reservoir sand. 展开更多
关键词 Shengtuo area near-shore subaqueous fan gravity flow channel slump turbidite fan sedimentary mode acoustic impedance inversion
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Drive current of accumulation-mode p-channel SOI-based wrap-gated Fin-FETs
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作者 张严波 杜彦东 +3 位作者 熊莹 杨香 韩伟华 杨富华 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第9期29-33,共5页
Comparisons are performed to study the drive current of accumulation-mode(AM) p-channel wrap-gated Fin-FETs.The drive current of the AM p-channel FET is 15%-26%larger than that of the inversion-mode (IM) p-channel... Comparisons are performed to study the drive current of accumulation-mode(AM) p-channel wrap-gated Fin-FETs.The drive current of the AM p-channel FET is 15%-26%larger than that of the inversion-mode (IM) p-channel FET with the same wrap-gated fin channel,because of the body current component in the AM FET, which becomes less dominative as the gate overdrive becomes larger.The drive currents of the AM p-channel wrap-gated Fin-FETs are 50%larger than those of the AM p-channel planar FETs,which arises from effective conducting surface broadening and volume accumulation in the AM wrap-gated Fin-FETs.The effective conducting surface broadening is due to wrap-gate-induced multi-surface conduction,while the volume accumulation,namely the majority carrier concentration anywhere in the fin cross section exceeding the fin doping density,is due to the coupling of electric fields from different parts of the wrap gate.Moreover,for AM p-channel wrap-gated Fin-FETs, the current in channel along 110 is larger than that in channel along 100,which arises from the surface mobility difference due to different transport directions and surface orientations.That is more obvious as the gate overdrive becomes larger,when the surface current component plays a more dominative role in the total current. 展开更多
关键词 accumulation mode inversion mode wrap gate Fin-FET volume accumulation
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INDIAN OCEAN DIPOLE AND ITS RELATIONSHIP WITH ENSO MODE 被引量:1
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作者 穆明权 李崇银 《Acta meteorologica Sinica》 SCIE 2002年第4期489-497,共9页
Near 100-year observed data sets are analyzed, and the results show that the variation of sea surface temperature(SST)in the equatorial Indian Ocean has a feature as a dipole oscillation.The situation of the dipole os... Near 100-year observed data sets are analyzed, and the results show that the variation of sea surface temperature(SST)in the equatorial Indian Ocean has a feature as a dipole oscillation.The situation of the dipole oscillation mainly shows the positive phase pattern(higher SST in the west and lower SST in the east than normal)and the negative phase pattern(higher SST in the east and lower SST in the west).The amplitude of the positive phase is larger than that of the negative phase.The dipole is stronger in September—November and weaker in January—April than in other months.It principally shows obviously inter-annual(4—5 year period)and inter-decadal variation(25—30 year period).Although the Indian Ocean dipole in the individual year seems to be independent of ENSO in the equatorial Pacific Ocean,in general,the Indian Ocean dipole has obviously negative correlation with the Pacific Ocean “dipole”(similar to the inverse phase of ENSO).The atmospheric zonal(Walker) circulation is fundamental for relating the two dipoles to each other. 展开更多
关键词 the Indian Ocean dipole the Pacific Ocean dipole(the inverse ENSO mode) Walker ciculation
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The impact of gate misalignment on the analog performance of a dual-material double gate junctionless transistor
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作者 S.Intekhab Amin R.K.Sarin 《Journal of Semiconductors》 EI CAS CSCD 2015年第9期47-53,共7页
The analog performance of gate misaligned dual material double gate junctionless transistor is demonstrated for the first time. The cases considered are where misalignment occurs towards source side and towards drain ... The analog performance of gate misaligned dual material double gate junctionless transistor is demonstrated for the first time. The cases considered are where misalignment occurs towards source side and towards drain side. The analog performance parameters analyzed are: transconductance, output conductance, intrinsic gain and cut-off frequency. These figures of merits (FOMs) are compared with a dual material double gate inversion mode transistor under same gate misalignment condition. The impacts of different length of control gate (L 1) for a given gate length (L) are also studied and the optimum lengths La under misalignment condition to have better analog FOMs and high tolerance to misalignment are presented. 展开更多
关键词 dual material double gate (DMDG) junctionless transistor inversion mode transistor gate misalign-ment analog FOMs
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