Organic semiconductor is one of the most promising luminescent and lasing materials that can be chemically synthesized with a controllable performance and possess high cross-section of stimulated emission[1].Organic s...Organic semiconductor is one of the most promising luminescent and lasing materials that can be chemically synthesized with a controllable performance and possess high cross-section of stimulated emission[1].Organic semiconductor laser diodes(OSLDs)can be prepared by simple processing technologies and integrated easily with other optoelectronic devices.As a result,OSLDs would展开更多
Starting from the data obtained recently,that the crystal yttrium aluminum borat e(NAB)is an ideal material for LD pumped microchip laser is demonstrated.Coopera ting with Material Physics Department of Autonoma Unive...Starting from the data obtained recently,that the crystal yttrium aluminum borat e(NAB)is an ideal material for LD pumped microchip laser is demonstrated.Coopera ting with Material Physics Department of Autonoma University of Madrid,Ti:sappir e laser was used to simulate laser diode to pump a NAB crystal sample of 0.3mm t hickness.For incident pump power of 375mW,laser output power at 1.064μm reach 1 57mW with optical to optical efficiency as high as 42%.The corresponding effici e ncy at 1.341μm is 25%.Output laser beams belong to TEM 00 mode.The thresho ld of laser oscillation at 1.064μm were 13,18,30,100 and 140mW for output mirr ors with transmittance of 0.36%,1%,2%,4% and 6% respectively.NAB crystal has a wide and flat absorption band with half high width of 45nm for pump light and so th e temperature shift of the laser diode wavelength will not affect the pumping effi ciency.All the advantages mentioned show the this crystal is obviously an ideal material for LD pumped microchip laser. Therefrom,the possible application of a series of self ativated laser crystal developed in the seventies years 20th century will be discussed in the case of L D lasers have been well developed.展开更多
Nd:Sr<sub>5</sub>（VO<sub>4</sub>）<sub>3</sub>F （Nd:SVAP） is a new type of laser crystal reported in recent years. L. George declared the growth of Nd:SVAP crystal for the first ...Nd:Sr<sub>5</sub>（VO<sub>4</sub>）<sub>3</sub>F （Nd:SVAP） is a new type of laser crystal reported in recent years. L. George declared the growth of Nd:SVAP crystal for the first time at MRS fall meeting in 1993. Soon after, the laser performance of Nd:SVAP pumped by a Ti:sapphire laser was reported. With the advantages of low pumping threshold and high conversion efficiency,Nd:SVAP is suitable for compact solid-state lasers pumped by laser diodes （LD） and has wide prospects in application. In this letter, we report the experimental results of an LD-pumped Nd:SVAP laser for the first time.展开更多
We report on frequency doubling of high-energy,high repetition rate ns pulses from a cryogenically gas cooled multi-slab ytterbium-doped yttrium aluminum garnet laser system,Bivoj/DiPOLE,using a type-I phase matched l...We report on frequency doubling of high-energy,high repetition rate ns pulses from a cryogenically gas cooled multi-slab ytterbium-doped yttrium aluminum garnet laser system,Bivoj/DiPOLE,using a type-I phase matched lithium triborate crystal.We achieved conversion to 515 nm with energy of 95 J at repetition rate of 10 Hz and conversion efficiency of 79%.High conversion efficiency was achieved due to successful depolarization compensation of the fundamental input beam.展开更多
基金supported by the CAS Innovation Program, the National Natural Science Foundation of China (51503196, 61775211, 61704170, 61405195 and 61774154)the financial support from the State Key Laboratory of Luminescence and Applications
文摘Organic semiconductor is one of the most promising luminescent and lasing materials that can be chemically synthesized with a controllable performance and possess high cross-section of stimulated emission[1].Organic semiconductor laser diodes(OSLDs)can be prepared by simple processing technologies and integrated easily with other optoelectronic devices.As a result,OSLDs would
文摘Starting from the data obtained recently,that the crystal yttrium aluminum borat e(NAB)is an ideal material for LD pumped microchip laser is demonstrated.Coopera ting with Material Physics Department of Autonoma University of Madrid,Ti:sappir e laser was used to simulate laser diode to pump a NAB crystal sample of 0.3mm t hickness.For incident pump power of 375mW,laser output power at 1.064μm reach 1 57mW with optical to optical efficiency as high as 42%.The corresponding effici e ncy at 1.341μm is 25%.Output laser beams belong to TEM 00 mode.The thresho ld of laser oscillation at 1.064μm were 13,18,30,100 and 140mW for output mirr ors with transmittance of 0.36%,1%,2%,4% and 6% respectively.NAB crystal has a wide and flat absorption band with half high width of 45nm for pump light and so th e temperature shift of the laser diode wavelength will not affect the pumping effi ciency.All the advantages mentioned show the this crystal is obviously an ideal material for LD pumped microchip laser. Therefrom,the possible application of a series of self ativated laser crystal developed in the seventies years 20th century will be discussed in the case of L D lasers have been well developed.
基金Project supported by the National Natural Science Foundation of China.
文摘Nd:Sr<sub>5</sub>（VO<sub>4</sub>）<sub>3</sub>F （Nd:SVAP） is a new type of laser crystal reported in recent years. L. George declared the growth of Nd:SVAP crystal for the first time at MRS fall meeting in 1993. Soon after, the laser performance of Nd:SVAP pumped by a Ti:sapphire laser was reported. With the advantages of low pumping threshold and high conversion efficiency,Nd:SVAP is suitable for compact solid-state lasers pumped by laser diodes （LD） and has wide prospects in application. In this letter, we report the experimental results of an LD-pumped Nd:SVAP laser for the first time.
基金This work was supported by the European Regional Development Fund and the state budget of the Czech Republic project HiLASE CoE(CZ.02.1.01/0.0/0.0/15_006/0000674)the Horizon 2020 Framework Programme(H2020)(739573).
文摘We report on frequency doubling of high-energy,high repetition rate ns pulses from a cryogenically gas cooled multi-slab ytterbium-doped yttrium aluminum garnet laser system,Bivoj/DiPOLE,using a type-I phase matched lithium triborate crystal.We achieved conversion to 515 nm with energy of 95 J at repetition rate of 10 Hz and conversion efficiency of 79%.High conversion efficiency was achieved due to successful depolarization compensation of the fundamental input beam.
