Biaxially oriented polypropylene(BOPP)is one of the most commonly used commercial capacitor films,but its upper operating temperature is below 105℃due to the sharply increased electrical conduction loss at high tempe...Biaxially oriented polypropylene(BOPP)is one of the most commonly used commercial capacitor films,but its upper operating temperature is below 105℃due to the sharply increased electrical conduction loss at high temperature.In this study,growing an inorganic nanoscale coating layer onto the BOPP film's surface is proposed to suppress electrical conduction loss at high temperature,as well as increase its upper operating temperature.Four kinds of inorganic coating layers that have different energy band structure and dielectric property are grown onto the both surface of BOPP films,respectively.The effect of inorganic coating layer on the high-temperature energy storage performance has been systematically investigated.The favorable coating layer materials and appropriate thickness enable the BOPP films to have a significant improvement in high-temperature energy storage performance.Specifically,when the aluminum nitride(AIN)acts as a coating layer,the AIN-BOPP-AIN sandwich-structured films possess a discharged energy density of 1.5 J cm^(-3)with an efficiency of 90%at 125℃,accompanying an outstandingly cyclic property.Both the discharged energy density and operation temperature are significantly enhanced,indicating that this efficient and facile method provides an important reference to improve the high-temperature energy storage performance of polymer-based dielectric films.展开更多
Despite the growing demand for transparent conductive films in smart and wearable electronics for electromagnetic interference(EMI)shielding,achieving a flexible EMI shielding film,while maintaining a high transmittan...Despite the growing demand for transparent conductive films in smart and wearable electronics for electromagnetic interference(EMI)shielding,achieving a flexible EMI shielding film,while maintaining a high transmittance remains a significant challenge.Herein,a flexible,transparent,and conductive copper(Cu)metal mesh film for EMI shielding is fabricated by self-forming crackle template method and electroplating technique.The Cu mesh film shows an ultra-low sheet resistance(0.18Ω□^(-1)),high transmittance(85.8%@550 nm),and ultra-high figure of merit(>13,000).It also has satisfactory stretchability and mechanical stability,with a resistance increases of only 1.3%after 1,000 bending cycles.As a stretchable heater(ε>30%),the saturation temperature of the film can reach over 110°C within 60 s at 1.00 V applied voltage.Moreover,the metal mesh film exhibits outstanding average EMI shielding effectiveness of 40.4 dB in the X-band at the thickness of 2.5μm.As a demonstration,it is used as a transparent window for shielding the wireless communication electromagnetic waves.Therefore,the flexible and transparent conductive Cu mesh film proposed in this work provides a promising candidate for the next-generation EMI shielding applications.展开更多
Doped HfO_(2)-based ferroelectric(FE)films are emerging as leading contenders for next-generation FE nonvolatile memories due to their excellent compatibility with complementary metal oxide semiconductor processes and...Doped HfO_(2)-based ferroelectric(FE)films are emerging as leading contenders for next-generation FE nonvolatile memories due to their excellent compatibility with complementary metal oxide semiconductor processes and robust ferroelectricity at nanoscale dimensions.Despite the considerable attention paid to the FE properties of HfO_(2)-based films in recent years,enhancing their polarization switching speed remains a critical research challenge.We demonstrate the strong ferroelectricity of sub-10nm Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films and show that the polarization switching speed of these thin films can be significantly affected by HZO thickness and anisotropically strained La_(0.67)Sr_(0.33)MO_(3)-buffered layer.Our observations indicate that the HZO thin film thickness and anisotropically strained La_(0.67)Sr_(0.33)MO_(3)layer influence the nucleation of reverse domains by altering the phase composition of the HZO thin film,thereby reducing the polarization switching time.Although the increase in HZO thickness and anisotropic compressive strain hinder the formation of the FE phase,they can enable faster switching.Our findings suggest that FE HZO ultrathin films with polar orthorhombic structures have broad application prospects in microelectronic devices.These insights into novel methods for increasing polarization switching speed are poised to advance the development of high-performance FE devices.展开更多
Fe_(3)GaTe_(2),as a layered ferromagnetic material,has a Curie temperature(T_(c))higher than room temperature,making it the key material in next-generation spintronic devices.To be used in practical devices,large-size...Fe_(3)GaTe_(2),as a layered ferromagnetic material,has a Curie temperature(T_(c))higher than room temperature,making it the key material in next-generation spintronic devices.To be used in practical devices,large-sized high-quality Fe_(3)GaTe_(2)thin films need to be prepared.Here,the centimeter-scale thin film samples with high crystal quality and above-room-temperature ferromagnetism with strong perpendicular magnetic anisotropy were prepared by molecular beam epitaxy technology.Furthermore,the Tc of the samples raises as the film thickness increases,and reaches 367K when the film thickness is 60 nm.This study provides material foundations for the new generation of van der Waals spintronic devices and paves the way for the commercial application of Fe_(3)GaTe_(2).展开更多
Exploring dimensionality effects on cuprates is important for understanding the nature of high-temperature superconductivity.By atomically layer-by-layer growth with oxide molecular beam epitaxy,we demonstrate that La...Exploring dimensionality effects on cuprates is important for understanding the nature of high-temperature superconductivity.By atomically layer-by-layer growth with oxide molecular beam epitaxy,we demonstrate that La_(2−x)Sr_(x)CuO_(4)(x=0.15)thin films remain superconducting down to 2 unit cells of thickness but quickly reach the maximum superconducting transition temperature at and above 4 unit cells.By fitting the critical magnetic field(μ0H_(c2)),we show that the anisotropy of the film’s superconductivity increases with decreasing film thickness,indicating that the superconductivity of the film gradually evolves from weak three-to two-dimensional character.These results are helpful to gain more insight into the nature of high-temperature superconductivity with dimensionality.展开更多
The high efficiency,solution processibility,and flexibility of perovskite solar cells make them promising candidates for the photovoltaic industry[1−8].The deposition method is one of the most critical factors that af...The high efficiency,solution processibility,and flexibility of perovskite solar cells make them promising candidates for the photovoltaic industry[1−8].The deposition method is one of the most critical factors that affect the performance of perovskite films.Various deposition methods have been developed to make perovskite films,including spin-coating,slotdie coating.展开更多
On the basis of coordinated electrodeposition of carboxylated chitosan(CCS),we presented a green method to prepare Cu NCs and Cu NCs/CCS nanocomposite films.The method shows a range of benefits,such as the convenient ...On the basis of coordinated electrodeposition of carboxylated chitosan(CCS),we presented a green method to prepare Cu NCs and Cu NCs/CCS nanocomposite films.The method shows a range of benefits,such as the convenient and eco-friendly process,mild conditions,and simple post-treatment.The experimental results reveal that a homogeneous deposited film(Cu NCs/CCS nanocomposite film)is generated on the Cu plate(the anode)after electrodeposition,which exhibits an obvious red florescence.The results from TEM observation suggest there are nanoparticles(with the average particle size of 2.3 nm)in the deposited film.Spectral analysis results both demonstrate the existence of Cu NCs in the deposited film.Moreover,the Cu NCs/CCS film modified electrode is directly created through electrodeposition of CCS,which enables promising application in the electrochemical sensing.By means of fluorescence properties of Cu NCs,the Cu NCs/CCS film also owns the potential in fluorescence detection.Therefore,this work builds a novel method for the green synthesis of Cu NCs,meanwhile it offers a convenient and new electrodeposition strategy to prepare polysaccharide-based Cu NCs nanocomposites for uses in functional nanocomposites and bioelectronic devices.展开更多
Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As...Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.展开更多
BiFeO_(3)(BFO)has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polariza-tion.However,BFO suffers from a large leakage current,resulting in poor ferroelectric p...BiFeO_(3)(BFO)has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polariza-tion.However,BFO suffers from a large leakage current,resulting in poor ferroelectric properties.Herein,the sol-gel method was used to deposit a series of BFO-based thin films on fluorine-doped tin oxide substrates,and the effects of the substitution of the elements Co,Cu,Mn(B-site)and Sm,Eu,La(A-site)on the crystal structure,ferroelectricity,and leakage current of the BFO-based thin films were invest-igated.Results confirmed that lattice distortion by X-ray diffraction can be attributed to the substitution of individual elements in the BFO-based films.Sm and Eu substitutions contribute to the lattice distortion in a pseudo-cubic structure,while La is biased toward pseudo-tet-ragonal.Piezoelectric force microscopy confirmed that reversible switching of ferroelectric domains by nearly 180°can be realized through the prepared films.The ferroelectric hysteresis loops showed that the order for the polarization contribution is as follows:Cu>Co>Mn(B-site),Sm>La>Eu(A-site).The current density voltage curves indicated that the order for leakage contribution is as follows:Mn<Cu<Co(B-site),La<Eu<Sm(A-site).Scanning electron microscopy showed that the introduction of Cu elements facilitates the formation of dense grains,and the grain size distribution statistics proved that La element promotes the reduction of grain size,leading to the increase of grain boundaries and the reduction of leakage.Finally,a Bi_(0.985)Sm_(0.045)La_(0.03)Fe_(0.96)Co_(0.02)Cu_(0.02)O_(3)(SmLa-CoCu)thin film with a qualitative leap in the remnant polarization from 25.5(Bi_(0.985)Sm_(0.075)FeO_(3))to 98.8µC/cm^(2)(SmLa-CoCu)was prepared through the syner-gistic action of Sm,La,Co,and Cu elements.The leakage current is also drastically reduced from 160 to 8.4 mA/cm^(2)at a field strength of 150 kV/cm.Thus,based on the increasing entropy strategy of chemical engineering,this study focuses on enhancing ferroelectricity and decreasing leakage current,providing a promising path for the advancement of ferroelectric devices.展开更多
Combining the mean field Pozhar-Gubbins(PG)theory and the weighted density approximation,a novel method for local thermal conductivity of inhomogeneous fluids is proposed.The correlation effect that is beyond the mean...Combining the mean field Pozhar-Gubbins(PG)theory and the weighted density approximation,a novel method for local thermal conductivity of inhomogeneous fluids is proposed.The correlation effect that is beyond the mean field treatment is taken into account by the simulation-based empirical correlations.The application of this method to confined argon in slit pore shows that its prediction agrees well with the simulation results,and that it performs better than the original PG theory as well as the local averaged density model(LADM).In its further application to the nano-fluidic films,the influences of fluid parameters and pore parameters on the thermal conductivity are calculated and investigated.It is found that both the local thermal conductivity and the overall thermal conductivity can be significantly modulated by these parameters.Specifically,in the supercritical states,the thermal conductivity of the confined fluid shows positive correlation to the bulk density as well as the temperature.However,when the bulk density is small,the thermal conductivity exhibits a decrease-increase transition as the temperature is increased.This is also the case in which the temperature is low.In fact,the decrease-increase transition in both the small-bulk-density and low-temperature cases arises from the capillary condensation in the pore.Furthermore,smaller pore width and/or stronger adsorption potential can raise the critical temperature for condensation,and then are beneficial to the enhancement of the thermal conductivity.These modulation behaviors of the local thermal conductivity lead immediately to the significant difference of the overall thermal conductivity in different phase regions.展开更多
The abuse of plastic food packaging has brought about severe white pollution issues around the world.Developing green and sustainable biomass packaging is an effective way to solve this problem.Hence,a chitosan/sodium...The abuse of plastic food packaging has brought about severe white pollution issues around the world.Developing green and sustainable biomass packaging is an effective way to solve this problem.Hence,a chitosan/sodium alginate-based multilayer film is fabricated via a layer-by-layer(LBL)self-assembly method.With the help of superior interaction between the layers,the multilayer film possesses excellent mechanical properties(with a tensile strength of 50 MPa).Besides,the film displays outstanding water retention property(blocking moisture of 97.56%)and ultraviolet blocking property.Anthocyanin is introduced into the film to detect the food quality since it is one natural plant polyphenol that is sensitive to the pH changes ranging from 1 to 13 in food when spoilage occurs.It is noted that the film is also bacteriostatic which is desired for food packaging.This study describes a simple technique for the development of advanced multifunctional and fully biodegradable food packaging film and it is a sustainable alternative to plastic packaging.展开更多
In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly impro...In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.展开更多
Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural a...Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.展开更多
NiO,an anodic electrochromic material,has applications in energy-saving windows,intelligent displays,and military camouflage.However,its electrochromic mechanism and reasons for its performance degradation in alkaline...NiO,an anodic electrochromic material,has applications in energy-saving windows,intelligent displays,and military camouflage.However,its electrochromic mechanism and reasons for its performance degradation in alkaline aqueous electrolytes are complex and poorly understood,making it challenging to improve NiO thin films.We studied the phases and electrochemical characteristics of NiO films in different states(initial,colored,bleached and after 8000 cycles)and identified three main reasons for performance degradation.First,Ni(OH)_(2)is generated during electrochromic cycling and deposited on the NiO film surface,gradually yielding a NiO@Ni(OH)_(2)core-shell structure,isolating the internal NiO film from the electrolyte,and preventing ion transfer.Second,the core-shell structure causes the mode of electrical conduction to change from first-to second-order conduction,reducing the efficiency of ion transfer to the surface Ni(OH)_(2)layer.Third,Ni(OH)_(2)and NiOOH,which have similar crystal structures but different b-axis lattice parameters,are formed during electrochromic cycling,and large volume changes in the unit cell reduce the structural stability of the thin film.Finally,we clarified the mechanism of electrochromic performance degradation of NiO films in alkaline aqueous electrolytes and provide a route to activation of NiO films,which will promote the development of electrochromic technology.展开更多
Magnesium and magnesium thin alloy films were deposited using a thermionic vacuum arc(TVA),which has multiple applications in the field of metallic electrodes for diodes and batteries or active corrosion protection.An...Magnesium and magnesium thin alloy films were deposited using a thermionic vacuum arc(TVA),which has multiple applications in the field of metallic electrodes for diodes and batteries or active corrosion protection.An improved laser-induced TVA(LTVA)method favors the crystallization processes of the deposited magnesium-based films because the interaction between laser and plasma discharge changes the thermal energy during photonic processes due to the local temperature variation.Plasma diagnosis based on current discharge measurements suggests an inelastic collision between the laser beam and the atoms from the plasma discharge.The morphology and surface properties of the obtained thin films differ between these two methods.While the amorphous character is dominant for TVA thin films,enabling a smooth surface,the LTVA method produces rough surfaces with prominent crystallinity,less hydrophobic character and lower surface energy.The smooth surfaces obtained by the TVA methods produce metallic electrodes with good electrical contact,ensuring better diodes and battery charge transport.Both methods allow uniform magnesium alloys to be obtained,but the laser used in the LTVA on the discharge plasma controls the added metal or element ratio.展开更多
The results presented here show for the first time the experimental demonstration of the fabrication of lossy mode resonance(LMR) devices based on perovskite coatings deposited on planar waveguides. Perovskite thin fi...The results presented here show for the first time the experimental demonstration of the fabrication of lossy mode resonance(LMR) devices based on perovskite coatings deposited on planar waveguides. Perovskite thin films have been obtained by means of the spin coating technique and their presence was confirmed by ellipsometry, scanning electron microscopy, and X-ray diffraction testing. The LMRs can be generated in a wide wavelength range and the experimental results agree with the theoretical simulations. Overall, this study highlights the potential of perovskite thin films for the development of novel LMR-based devices that can be used for environmental monitoring, industrial sensing, and gas detection, among other applications.展开更多
Magnetron sputtering deposition with regulated Cu target power was used for depositing Cu-containing high-entropy alloy nitride(Cu-(HEA)N)films on TC4 titanium alloy substrates.The microscopic morphologies,surface com...Magnetron sputtering deposition with regulated Cu target power was used for depositing Cu-containing high-entropy alloy nitride(Cu-(HEA)N)films on TC4 titanium alloy substrates.The microscopic morphologies,surface compositions,and thicknesses of the films were characterized using SEM+EDS;the anti-corrosion,wear resistance and antibacterial properties of the films in simulated seawater were investigated.The experimental results show that all four Cu-(HEA)N films are uniformly dense and contained nanoparticles.The film with Cu doping come into contact with oxygen in the air to form cuprous oxide.The corrosion resistance of the(HEA)N film without Cu doping on titanium alloy is better than the films with Cu doping.The Cu-(HEA)N film with Cu target power of 16 W shows the best wear resistance and antibacterial performance,which is attributed to the fact that Cu can reduce the coefficient of friction and exacerbate corrosion,and the formation of cuprous oxide has antibacterial properties.The findings of this study provide insights for engineering applications of TC4 in the marine field.展开更多
Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhi...Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.展开更多
In this article,a series of high refractive indices(1.50-1.53)thiol phenyl polysiloxane(TPS)were synthesized via hydrolytic sol-gel reaction.The Fourier transform infrared spectra(FT-IR)and nuclear magnetic resonance ...In this article,a series of high refractive indices(1.50-1.53)thiol phenyl polysiloxane(TPS)were synthesized via hydrolytic sol-gel reaction.The Fourier transform infrared spectra(FT-IR)and nuclear magnetic resonance spectra(NMR)results showed that TPS conformed to the predicted structures.Natural terpene linalool was exploited as photocrosslinker to fabricate UV-curing linalool-polysiloxane hybrid films(LPH)with TPS via photoinitiated thiol-ene reaction.LPH rapidly cured under UV irradiation at the intensity of 80 mW/cm^(2) in 30 s,exhibiting good UV-curing properties.The optical transmittance of LPH in the wavelength of 300-800 nm was over 90%,exhibiting good optical transparency.The water contact angle and water vapor permeability results showed that the introduction of phenyl groups enhance the hydrophobicity and water vapor barrier properties of LPH.The results indicated the potential of LPHs in the applications of optical functional coatings.展开更多
The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conv...The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge_2Sb_2Te_5(GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.展开更多
基金supported by the National Natural Science Foundation of China(Nos.52277024,U20A20308)Natural Science Foundation of Heilongjiang Province(No.YQ2020E031)+3 种基金China Postdoctoral Science Foundation(Nos.2021T140166,2018M640303)Heilongjiang Province Postdoctoral Science Foundation(No.LBH-Z18099)University Nursing Program for Young Scholars with Creative Talents in Heilongjiang Province(No.UNPYSCT-2020178)the support from the China Scholarship Council(CSC)
文摘Biaxially oriented polypropylene(BOPP)is one of the most commonly used commercial capacitor films,but its upper operating temperature is below 105℃due to the sharply increased electrical conduction loss at high temperature.In this study,growing an inorganic nanoscale coating layer onto the BOPP film's surface is proposed to suppress electrical conduction loss at high temperature,as well as increase its upper operating temperature.Four kinds of inorganic coating layers that have different energy band structure and dielectric property are grown onto the both surface of BOPP films,respectively.The effect of inorganic coating layer on the high-temperature energy storage performance has been systematically investigated.The favorable coating layer materials and appropriate thickness enable the BOPP films to have a significant improvement in high-temperature energy storage performance.Specifically,when the aluminum nitride(AIN)acts as a coating layer,the AIN-BOPP-AIN sandwich-structured films possess a discharged energy density of 1.5 J cm^(-3)with an efficiency of 90%at 125℃,accompanying an outstandingly cyclic property.Both the discharged energy density and operation temperature are significantly enhanced,indicating that this efficient and facile method provides an important reference to improve the high-temperature energy storage performance of polymer-based dielectric films.
基金This work was financially supported by the National Natural Science Foundation of China(Grant No.523712475,2072415 and 62101352)Shenzhen Science and Technology Program(RCBS20210706092343016).
文摘Despite the growing demand for transparent conductive films in smart and wearable electronics for electromagnetic interference(EMI)shielding,achieving a flexible EMI shielding film,while maintaining a high transmittance remains a significant challenge.Herein,a flexible,transparent,and conductive copper(Cu)metal mesh film for EMI shielding is fabricated by self-forming crackle template method and electroplating technique.The Cu mesh film shows an ultra-low sheet resistance(0.18Ω□^(-1)),high transmittance(85.8%@550 nm),and ultra-high figure of merit(>13,000).It also has satisfactory stretchability and mechanical stability,with a resistance increases of only 1.3%after 1,000 bending cycles.As a stretchable heater(ε>30%),the saturation temperature of the film can reach over 110°C within 60 s at 1.00 V applied voltage.Moreover,the metal mesh film exhibits outstanding average EMI shielding effectiveness of 40.4 dB in the X-band at the thickness of 2.5μm.As a demonstration,it is used as a transparent window for shielding the wireless communication electromagnetic waves.Therefore,the flexible and transparent conductive Cu mesh film proposed in this work provides a promising candidate for the next-generation EMI shielding applications.
基金supported by the National Key Research and Development Program of China(Grant Nos.2023YFA1406404 and 2020YFA0309100)the National Natural Science Foundation of China(Grant Nos.12074365,12374094,12304153,U2032218,and 11974326),the National Natural Science Foundation of China(Grant No.12274120)+4 种基金CAS Project for Young Scientists in Basic Research(Grant No.YSBR-084)the Fundamental Research Funds for the Central Universities(Grant Nos.WK9990000102 and WK2030000035)Anhui Provincial Natural Science Foundation(Grant No.2308085MA15)Hefei Science Center CAS Foundation(Grant Nos.2021HSC-CIP017 and 2016HSC-IU06)the China Postdoctoral Science Foundation(Grant No.2022M713060)。
文摘Doped HfO_(2)-based ferroelectric(FE)films are emerging as leading contenders for next-generation FE nonvolatile memories due to their excellent compatibility with complementary metal oxide semiconductor processes and robust ferroelectricity at nanoscale dimensions.Despite the considerable attention paid to the FE properties of HfO_(2)-based films in recent years,enhancing their polarization switching speed remains a critical research challenge.We demonstrate the strong ferroelectricity of sub-10nm Hf_(0.5)Zr_(0.5)O_(2)(HZO)thin films and show that the polarization switching speed of these thin films can be significantly affected by HZO thickness and anisotropically strained La_(0.67)Sr_(0.33)MO_(3)-buffered layer.Our observations indicate that the HZO thin film thickness and anisotropically strained La_(0.67)Sr_(0.33)MO_(3)layer influence the nucleation of reverse domains by altering the phase composition of the HZO thin film,thereby reducing the polarization switching time.Although the increase in HZO thickness and anisotropic compressive strain hinder the formation of the FE phase,they can enable faster switching.Our findings suggest that FE HZO ultrathin films with polar orthorhombic structures have broad application prospects in microelectronic devices.These insights into novel methods for increasing polarization switching speed are poised to advance the development of high-performance FE devices.
基金supported by the National Natural Science Foundation of China(Grant No.12241403)the Natural Science Foundation of Jiangsu Province of China(Grant No.BK20140054)。
文摘Fe_(3)GaTe_(2),as a layered ferromagnetic material,has a Curie temperature(T_(c))higher than room temperature,making it the key material in next-generation spintronic devices.To be used in practical devices,large-sized high-quality Fe_(3)GaTe_(2)thin films need to be prepared.Here,the centimeter-scale thin film samples with high crystal quality and above-room-temperature ferromagnetism with strong perpendicular magnetic anisotropy were prepared by molecular beam epitaxy technology.Furthermore,the Tc of the samples raises as the film thickness increases,and reaches 367K when the film thickness is 60 nm.This study provides material foundations for the new generation of van der Waals spintronic devices and paves the way for the commercial application of Fe_(3)GaTe_(2).
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1403000)the Na-tional Natural Science Foundation of China(Grant No.12250710675).
文摘Exploring dimensionality effects on cuprates is important for understanding the nature of high-temperature superconductivity.By atomically layer-by-layer growth with oxide molecular beam epitaxy,we demonstrate that La_(2−x)Sr_(x)CuO_(4)(x=0.15)thin films remain superconducting down to 2 unit cells of thickness but quickly reach the maximum superconducting transition temperature at and above 4 unit cells.By fitting the critical magnetic field(μ0H_(c2)),we show that the anisotropy of the film’s superconductivity increases with decreasing film thickness,indicating that the superconductivity of the film gradually evolves from weak three-to two-dimensional character.These results are helpful to gain more insight into the nature of high-temperature superconductivity with dimensionality.
基金We thank the National Natural Science Foundation of China(52203217 and 21961160720)the National Key Research and Development Program of China(2022YFB3803300)the open research fund of Songshan Lake Materials Laboratory(2021SLABFK02)for financial support.
文摘The high efficiency,solution processibility,and flexibility of perovskite solar cells make them promising candidates for the photovoltaic industry[1−8].The deposition method is one of the most critical factors that affect the performance of perovskite films.Various deposition methods have been developed to make perovskite films,including spin-coating,slotdie coating.
基金Funded by the National Natural Science Foundation of China(No.51873167)the Fundamental Research Funds for the Central Universities(WUT:2022-CL-A1-04)。
文摘On the basis of coordinated electrodeposition of carboxylated chitosan(CCS),we presented a green method to prepare Cu NCs and Cu NCs/CCS nanocomposite films.The method shows a range of benefits,such as the convenient and eco-friendly process,mild conditions,and simple post-treatment.The experimental results reveal that a homogeneous deposited film(Cu NCs/CCS nanocomposite film)is generated on the Cu plate(the anode)after electrodeposition,which exhibits an obvious red florescence.The results from TEM observation suggest there are nanoparticles(with the average particle size of 2.3 nm)in the deposited film.Spectral analysis results both demonstrate the existence of Cu NCs in the deposited film.Moreover,the Cu NCs/CCS film modified electrode is directly created through electrodeposition of CCS,which enables promising application in the electrochemical sensing.By means of fluorescence properties of Cu NCs,the Cu NCs/CCS film also owns the potential in fluorescence detection.Therefore,this work builds a novel method for the green synthesis of Cu NCs,meanwhile it offers a convenient and new electrodeposition strategy to prepare polysaccharide-based Cu NCs nanocomposites for uses in functional nanocomposites and bioelectronic devices.
基金the financial support from the National Key Research and Development Program of China(No.2017YFB0305500)the State Key Laboratory of Powder Metallurgy,Central South University,Changsha,China.
文摘Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.
基金supported by the National Natural Science Foundation of China(No.22371013)the National Key Research and Development Program of China(No.2018YFA0703700)+3 种基金the Fundamental Research Funds for the Central Universities,China(Nos.FRF-IDRY-19-007 and FRF-TP-19-055A2Z)the National Program for Support of Top-notch Young Professionals,Chinathe Young Elite Scientists Sponsorship Program by the China Association for Science and Technology(CAST),China(No.2019-2021 QNRC)the“Xiaomi Young Scholar”Funding Project,China.
文摘BiFeO_(3)(BFO)has received considerable attention as a lead-free ferroelectric film due to its large theoretical remnant polariza-tion.However,BFO suffers from a large leakage current,resulting in poor ferroelectric properties.Herein,the sol-gel method was used to deposit a series of BFO-based thin films on fluorine-doped tin oxide substrates,and the effects of the substitution of the elements Co,Cu,Mn(B-site)and Sm,Eu,La(A-site)on the crystal structure,ferroelectricity,and leakage current of the BFO-based thin films were invest-igated.Results confirmed that lattice distortion by X-ray diffraction can be attributed to the substitution of individual elements in the BFO-based films.Sm and Eu substitutions contribute to the lattice distortion in a pseudo-cubic structure,while La is biased toward pseudo-tet-ragonal.Piezoelectric force microscopy confirmed that reversible switching of ferroelectric domains by nearly 180°can be realized through the prepared films.The ferroelectric hysteresis loops showed that the order for the polarization contribution is as follows:Cu>Co>Mn(B-site),Sm>La>Eu(A-site).The current density voltage curves indicated that the order for leakage contribution is as follows:Mn<Cu<Co(B-site),La<Eu<Sm(A-site).Scanning electron microscopy showed that the introduction of Cu elements facilitates the formation of dense grains,and the grain size distribution statistics proved that La element promotes the reduction of grain size,leading to the increase of grain boundaries and the reduction of leakage.Finally,a Bi_(0.985)Sm_(0.045)La_(0.03)Fe_(0.96)Co_(0.02)Cu_(0.02)O_(3)(SmLa-CoCu)thin film with a qualitative leap in the remnant polarization from 25.5(Bi_(0.985)Sm_(0.075)FeO_(3))to 98.8µC/cm^(2)(SmLa-CoCu)was prepared through the syner-gistic action of Sm,La,Co,and Cu elements.The leakage current is also drastically reduced from 160 to 8.4 mA/cm^(2)at a field strength of 150 kV/cm.Thus,based on the increasing entropy strategy of chemical engineering,this study focuses on enhancing ferroelectricity and decreasing leakage current,providing a promising path for the advancement of ferroelectric devices.
基金Project supported by the Fundamental Research Fund for the Central Universities of Chinathe Research Project for Independently Cultivate Talents of Hebei Agricultural University (Grant No.ZY2023007)。
文摘Combining the mean field Pozhar-Gubbins(PG)theory and the weighted density approximation,a novel method for local thermal conductivity of inhomogeneous fluids is proposed.The correlation effect that is beyond the mean field treatment is taken into account by the simulation-based empirical correlations.The application of this method to confined argon in slit pore shows that its prediction agrees well with the simulation results,and that it performs better than the original PG theory as well as the local averaged density model(LADM).In its further application to the nano-fluidic films,the influences of fluid parameters and pore parameters on the thermal conductivity are calculated and investigated.It is found that both the local thermal conductivity and the overall thermal conductivity can be significantly modulated by these parameters.Specifically,in the supercritical states,the thermal conductivity of the confined fluid shows positive correlation to the bulk density as well as the temperature.However,when the bulk density is small,the thermal conductivity exhibits a decrease-increase transition as the temperature is increased.This is also the case in which the temperature is low.In fact,the decrease-increase transition in both the small-bulk-density and low-temperature cases arises from the capillary condensation in the pore.Furthermore,smaller pore width and/or stronger adsorption potential can raise the critical temperature for condensation,and then are beneficial to the enhancement of the thermal conductivity.These modulation behaviors of the local thermal conductivity lead immediately to the significant difference of the overall thermal conductivity in different phase regions.
基金National Undergraduate Training Program for Innovation and Entrepreneurship of China (Grant No.202210288027).
文摘The abuse of plastic food packaging has brought about severe white pollution issues around the world.Developing green and sustainable biomass packaging is an effective way to solve this problem.Hence,a chitosan/sodium alginate-based multilayer film is fabricated via a layer-by-layer(LBL)self-assembly method.With the help of superior interaction between the layers,the multilayer film possesses excellent mechanical properties(with a tensile strength of 50 MPa).Besides,the film displays outstanding water retention property(blocking moisture of 97.56%)and ultraviolet blocking property.Anthocyanin is introduced into the film to detect the food quality since it is one natural plant polyphenol that is sensitive to the pH changes ranging from 1 to 13 in food when spoilage occurs.It is noted that the film is also bacteriostatic which is desired for food packaging.This study describes a simple technique for the development of advanced multifunctional and fully biodegradable food packaging film and it is a sustainable alternative to plastic packaging.
基金supported by the Key Research and Development Program of Jilin Provincial Department of Science and Technology (No. 20210201031GX)Innovation capacity building project of Jilin Province (No. 2023C031-2)The Key Research and Development Program of Jiangsu Province (No. BE2022057-1)。
文摘In this work, AlN films were grown using gallium (Ga) as surfactant on 4° off-axis 4H-SiC substrates via microwave plasma chemical vapor deposition (MPCVD). We have found that AlN growth rate can be greatly improved due to the catalytic effect of trimethyl-gallium (TMGa), but AlN crystal structure and composition are not affected. When the proportion of TMGa in gas phase was low, crystal quality of AlN can be improved and three-dimensional growth mode of AlN was enhanced with the increase of Ga source. When the proportion of TMGa in gas phase was high, two-dimensional growth mode of AlN was presented, with the increase of Ga source results in the deterioration of AlN crystal quality. Finally, employing a two-step growth approach, involving the initial growth of Ga-free AlN nucleation layer followed by Ga-assisted AlN growth, high quality of AlN film with flat surface was obtained and the full width at half maximum (FWHM) values of 415 nm AlN (002) and (102) planes were 465 and 597 arcsec.
基金Project supported by the National Key Research and Development Program of China (Grant Nos.2021YFB3601000 and 2021YFB3601002)the National Natural Science Foundation of China (Grant Nos.62074077,61921005,61974062,62204121,and 61904082)+1 种基金Leading-edge Technology Program of Jiangsu Natural Science Foundation (Grant No.BE2021008-2)the China Postdoctoral Science Foundation (Grant No.2020M671441)。
文摘Nonpolar(11–20) a-plane p-type GaN films were successfully grown on r-plane sapphire substrate with the metal–organic chemical vapor deposition(MOCVD) system. The effects of Mg-doping temperature on the structural and electrical properties of nonpolar p-type GaN films were investigated in detail. It is found that all the surface morphology, crystalline quality, strains, and electrical properties of nonpolar a-plane p-type GaN films are interconnected, and are closely related to the Mg-doping temperature. This means that a proper performance of nonpolar p-type GaN can be expected by optimizing the Mg-doping temperature. In fact, a hole concentration of 1.3×10^(18)cm^(-3), a high Mg activation efficiency of 6.5%,an activation energy of 114 me V for Mg acceptor, and a low anisotropy of 8.3% in crystalline quality were achieved with a growth temperature of 990℃. This approach to optimizing the Mg-doping temperature of the nonpolar a-plane p-type GaN film provides an effective way to fabricate high-efficiency optoelectronic devices in the future.
基金supported by the Special Support Program for High-level Talents of Shaanxi Province(No.2020-44)Innnovative Talent Project of China and The Youth Innovation Team of Shaanxi Universities
文摘NiO,an anodic electrochromic material,has applications in energy-saving windows,intelligent displays,and military camouflage.However,its electrochromic mechanism and reasons for its performance degradation in alkaline aqueous electrolytes are complex and poorly understood,making it challenging to improve NiO thin films.We studied the phases and electrochemical characteristics of NiO films in different states(initial,colored,bleached and after 8000 cycles)and identified three main reasons for performance degradation.First,Ni(OH)_(2)is generated during electrochromic cycling and deposited on the NiO film surface,gradually yielding a NiO@Ni(OH)_(2)core-shell structure,isolating the internal NiO film from the electrolyte,and preventing ion transfer.Second,the core-shell structure causes the mode of electrical conduction to change from first-to second-order conduction,reducing the efficiency of ion transfer to the surface Ni(OH)_(2)layer.Third,Ni(OH)_(2)and NiOOH,which have similar crystal structures but different b-axis lattice parameters,are formed during electrochromic cycling,and large volume changes in the unit cell reduce the structural stability of the thin film.Finally,we clarified the mechanism of electrochromic performance degradation of NiO films in alkaline aqueous electrolytes and provide a route to activation of NiO films,which will promote the development of electrochromic technology.
基金funded by CCDI-UEFISCDI project number PN-III-P2-2.1-PED-2021-0828,within PNCDI III and by the program Johannes Amos Comenius(cofunded by the European Union)QM4ST,project number CZ.02.01.01/00/22_008/0004572.
文摘Magnesium and magnesium thin alloy films were deposited using a thermionic vacuum arc(TVA),which has multiple applications in the field of metallic electrodes for diodes and batteries or active corrosion protection.An improved laser-induced TVA(LTVA)method favors the crystallization processes of the deposited magnesium-based films because the interaction between laser and plasma discharge changes the thermal energy during photonic processes due to the local temperature variation.Plasma diagnosis based on current discharge measurements suggests an inelastic collision between the laser beam and the atoms from the plasma discharge.The morphology and surface properties of the obtained thin films differ between these two methods.While the amorphous character is dominant for TVA thin films,enabling a smooth surface,the LTVA method produces rough surfaces with prominent crystallinity,less hydrophobic character and lower surface energy.The smooth surfaces obtained by the TVA methods produce metallic electrodes with good electrical contact,ensuring better diodes and battery charge transport.Both methods allow uniform magnesium alloys to be obtained,but the laser used in the LTVA on the discharge plasma controls the added metal or element ratio.
基金the partial support to Agencia Estatal de Investigación PID2019-106231RB-I00 research projectUniversidad Rey Juan Carlos with research project “Células fotovoltaicas de tercera generación basadas en semiconductores orgánicos avanzados perovskitas híbridas en estructuras multiunión” (reference M2607)the pre-doctoral research grant of the Public University of Navarra。
文摘The results presented here show for the first time the experimental demonstration of the fabrication of lossy mode resonance(LMR) devices based on perovskite coatings deposited on planar waveguides. Perovskite thin films have been obtained by means of the spin coating technique and their presence was confirmed by ellipsometry, scanning electron microscopy, and X-ray diffraction testing. The LMRs can be generated in a wide wavelength range and the experimental results agree with the theoretical simulations. Overall, this study highlights the potential of perovskite thin films for the development of novel LMR-based devices that can be used for environmental monitoring, industrial sensing, and gas detection, among other applications.
基金Funded by the National Natural Science Foundation of China(No.52071252)the Key Research and Development Plan of Shaanxi Province Industrial Project(Nos.2021GY-208,2022GY-407,and 2021ZDLSF03-11)the China Postdoctoral Science Foundation(No.2020M683670XB)。
文摘Magnetron sputtering deposition with regulated Cu target power was used for depositing Cu-containing high-entropy alloy nitride(Cu-(HEA)N)films on TC4 titanium alloy substrates.The microscopic morphologies,surface compositions,and thicknesses of the films were characterized using SEM+EDS;the anti-corrosion,wear resistance and antibacterial properties of the films in simulated seawater were investigated.The experimental results show that all four Cu-(HEA)N films are uniformly dense and contained nanoparticles.The film with Cu doping come into contact with oxygen in the air to form cuprous oxide.The corrosion resistance of the(HEA)N film without Cu doping on titanium alloy is better than the films with Cu doping.The Cu-(HEA)N film with Cu target power of 16 W shows the best wear resistance and antibacterial performance,which is attributed to the fact that Cu can reduce the coefficient of friction and exacerbate corrosion,and the formation of cuprous oxide has antibacterial properties.The findings of this study provide insights for engineering applications of TC4 in the marine field.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.11874304 and 11574253)。
文摘Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.
基金the financial funding of the Guangdong Province Applied Science and Technology R&D Special Fund Project:Key Technologies for Industrialization of Sulfur-Resistant and High Refractive-Index LED Packaging Silicone Materials(2016B090930010).
文摘In this article,a series of high refractive indices(1.50-1.53)thiol phenyl polysiloxane(TPS)were synthesized via hydrolytic sol-gel reaction.The Fourier transform infrared spectra(FT-IR)and nuclear magnetic resonance spectra(NMR)results showed that TPS conformed to the predicted structures.Natural terpene linalool was exploited as photocrosslinker to fabricate UV-curing linalool-polysiloxane hybrid films(LPH)with TPS via photoinitiated thiol-ene reaction.LPH rapidly cured under UV irradiation at the intensity of 80 mW/cm^(2) in 30 s,exhibiting good UV-curing properties.The optical transmittance of LPH in the wavelength of 300-800 nm was over 90%,exhibiting good optical transparency.The water contact angle and water vapor permeability results showed that the introduction of phenyl groups enhance the hydrophobicity and water vapor barrier properties of LPH.The results indicated the potential of LPHs in the applications of optical functional coatings.
基金financially supported by the National Natural Science Foundation of China(Grant No.62074089)the Natural Science Foundation of Ningbo City,China(Grant No.2022J072)+1 种基金the Youth Science and Technology Innovation Leading Talent Project of Ningbo City,China(Grant No.2023QL005)sponsored by the K.C.Wong Magna Fund in Ningbo University。
文摘The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge_2Sb_2Te_5(GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.
