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STEADY HEAT TRANSFER ANALYSIS AND PARAMETER OPTIMIZATION FOR MULTILAYER THERMAL INSULATIONS 被引量:2
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作者 闫长海 曲寿江 +3 位作者 孟松鹤 陈贵清 杜善义 刘国仟 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI 2006年第4期257-263,共7页
The energy equilibrium equation and discrete ordinate methods are combined to establish the one-dimensional steady heat transfer mathematical model of multi-layer thermal insulations (MTIs) in metallic thermal prote... The energy equilibrium equation and discrete ordinate methods are combined to establish the one-dimensional steady heat transfer mathematical model of multi-layer thermal insulations (MTIs) in metallic thermal protection systems. The inverse problem of heat transfer is solved by the genetic algorithm and data from the steady heat transfer experiment of fibrous thermal insulations. The density radiation attenuation coefficient, the albedo of fibrous thermal insulations and the surface emissivity of reflective screens are optimized. Finally, the one-dimensional steady heat transfer model of MTIs with optimized thermal physical parameters is verified by experimental data of the effective MTI conductivity. 展开更多
关键词 metallic thermal protection system steady heat transfer muhilayer thermal insulations genetic algorithm
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High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures
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作者 王晓峰 曾一平 +4 位作者 王保强 朱占平 杜晓晴 李敏 常本康 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第9期1692-1698,共7页
The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and th... The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for nega- tive-electron-affinity GaAs photocathodes is investigated. Two GaAs samples with the monolayer structure and the muhilayer structure are grown by molecular beam epitaxy. The former has a constant Be concentration of 1 × 10^19 cm^-3, while the latter includes four layers with Be doping concentrations of 1 × 10^19, 7 × 10^18, 4 × 10^18, and 1 × 10^18 cm^-3 from the bottom to the surface. Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system. The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the muhilayer structure enhanced by at least 50% as compared to that of the monolayer structure. This attributes to the improvement in the crystal quality and the increase in the surface escape probability. Different stress situations are observed on GaAs samples with monolayer structure and muhilayer structure, respectively. 展开更多
关键词 integrated photosensitivity muhilayer structure NEA photocathode diffusion length surface escape probability
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