The dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies have been studied. The nano Si/C/N composite powder and nano SiC powder were synthesized from hexamethyldisilazane ((Me...The dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies have been studied. The nano Si/C/N composite powder and nano SiC powder were synthesized from hexamethyldisilazane ((Me 3Si) 2NH) (Me:CH 3) and SiH 4 C 2H 2 respectively by a laser induced gas phase reaction. The complex permittivities of the nano Si/C/N composite powder and nano SiC powder were measured between 8 2GHz and 12 4GHz. The real and imaginary parts of the complex permittivities of nano Si/C/N composite powder are much higher than those of nano SiC powder. The SiC microcrystalline in the nano Si/C/N composite powder dissolved a great deal of nitrogen. The local structure around Si atoms changed by introducing N into SiC. Carbon atoms around Si were substituted by N atoms. So charged defects and quasi free electrons moved in response to the electric field, diffusion or polarization current resulted from the field propagation. The high ε″and loss factor tgδ(ε″/ε′) of Si/C/N composite powder were due to the dielectric relaxation.展开更多
文摘The dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies have been studied. The nano Si/C/N composite powder and nano SiC powder were synthesized from hexamethyldisilazane ((Me 3Si) 2NH) (Me:CH 3) and SiH 4 C 2H 2 respectively by a laser induced gas phase reaction. The complex permittivities of the nano Si/C/N composite powder and nano SiC powder were measured between 8 2GHz and 12 4GHz. The real and imaginary parts of the complex permittivities of nano Si/C/N composite powder are much higher than those of nano SiC powder. The SiC microcrystalline in the nano Si/C/N composite powder dissolved a great deal of nitrogen. The local structure around Si atoms changed by introducing N into SiC. Carbon atoms around Si were substituted by N atoms. So charged defects and quasi free electrons moved in response to the electric field, diffusion or polarization current resulted from the field propagation. The high ε″and loss factor tgδ(ε″/ε′) of Si/C/N composite powder were due to the dielectric relaxation.
