A new naturally occurring compound 1-polyacetylene glycoside has been isolated form the n- butanol soluble fraction of the leaves of Bidens bipinnata. The chemical structure of 1 was shown to be 3E, 11E—Diethenylene ...A new naturally occurring compound 1-polyacetylene glycoside has been isolated form the n- butanol soluble fraction of the leaves of Bidens bipinnata. The chemical structure of 1 was shown to be 3E, 11E—Diethenylene 5. 7. 9—triacetylene, 1, 13—tridecanglycol-2-O-β-D-glycoside named bipinnatpolyacetyloside according to spectral analyses of UV. IR. FDMS, ~1H-NMR, ~H-~H COSY, ^(13)C-NMR and DEPT.展开更多
A new Belousov-Zhabotinsky oscillator induced by Triton X-100 (a nonionic surfactant)with glucose as the organic substrate and Ce^(4+)as the catalyst has been reported in this paper.
An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is dep...An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscppy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.展开更多
文摘A new naturally occurring compound 1-polyacetylene glycoside has been isolated form the n- butanol soluble fraction of the leaves of Bidens bipinnata. The chemical structure of 1 was shown to be 3E, 11E—Diethenylene 5. 7. 9—triacetylene, 1, 13—tridecanglycol-2-O-β-D-glycoside named bipinnatpolyacetyloside according to spectral analyses of UV. IR. FDMS, ~1H-NMR, ~H-~H COSY, ^(13)C-NMR and DEPT.
文摘A new Belousov-Zhabotinsky oscillator induced by Triton X-100 (a nonionic surfactant)with glucose as the organic substrate and Ce^(4+)as the catalyst has been reported in this paper.
文摘An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscppy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.
