Static Poisson’s ratio(vs)is crucial for determining geomechanical properties in petroleum applications,namely sand production.Some models have been used to predict vs;however,the published models were limited to spe...Static Poisson’s ratio(vs)is crucial for determining geomechanical properties in petroleum applications,namely sand production.Some models have been used to predict vs;however,the published models were limited to specific data ranges with an average absolute percentage relative error(AAPRE)of more than 10%.The published gated recurrent unit(GRU)models do not consider trend analysis to show physical behaviors.In this study,we aim to develop a GRU model using trend analysis and three inputs for predicting n s based on a broad range of data,n s(value of 0.1627-0.4492),bulk formation density(RHOB)(0.315-2.994 g/mL),compressional time(DTc)(44.43-186.9 μs/ft),and shear time(DTs)(72.9-341.2μ s/ft).The GRU model was evaluated using different approaches,including statistical error an-alyses.The GRU model showed the proper trends,and the model data ranges were wider than previous ones.The GRU model has the largest correlation coefficient(R)of 0.967 and the lowest AAPRE,average percent relative error(APRE),root mean square error(RMSE),and standard deviation(SD)of 3.228%,1.054%,4.389,and 0.013,respectively,compared to other models.The GRU model has a high accuracy for the different datasets:training,validation,testing,and the whole datasets with R and AAPRE values were 0.981 and 2.601%,0.966 and 3.274%,0.967 and 3.228%,and 0.977 and 2.861%,respectively.The group error analyses of all inputs show that the GRU model has less than 5% AAPRE for all input ranges,which is superior to other models that have different AAPRE values of more than 10% at various ranges of inputs.展开更多
Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied ...Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges.Hole concentration,resistivity and mobility were characterized by room-temperature Hall measurements.The Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the impurities.The hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature data.The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.展开更多
In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state throu...In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.展开更多
In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film...In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.展开更多
In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modula...In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)channel.SA-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/mm.The fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·mm.Additionally,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.展开更多
Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chi...Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chip is a highly desirable but challenging goal.Here we propose a hybrid architecture that utilizes a high-impedance SQUID array resonator as a quantum bus,thereby coherently coupling different solid-state qubits.We employ a resonant exchange spin qubit hosted in a triple quantum dot and a superconducting transmon qubit.Since this hybrid system is highly tunable,it can operate in a dispersive regime,where the interaction between the different qubits is mediated by virtual photons.By utilizing such interactions,entangling gate operations between different qubits can be realized in a short time of 30 ns with a fidelity of up to 96.5%under realistic parameter conditions.Further utilizing this interaction,remote entangled state between different qubits can be prepared and is robust to perturbations of various parameters.These results pave the way for exploring efficient fault-tolerant quantum computation on hybrid quantum architecture platforms.展开更多
Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive ...Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.展开更多
Social media has become increasingly significant in modern society,but it has also turned into a breeding ground for the propagation of misleading information,potentially causing a detrimental impact on public opinion...Social media has become increasingly significant in modern society,but it has also turned into a breeding ground for the propagation of misleading information,potentially causing a detrimental impact on public opinion and daily life.Compared to pure text content,multmodal content significantly increases the visibility and share ability of posts.This has made the search for efficient modality representations and cross-modal information interaction methods a key focus in the field of multimodal fake news detection.To effectively address the critical challenge of accurately detecting fake news on social media,this paper proposes a fake news detection model based on crossmodal message aggregation and a gated fusion network(MAGF).MAGF first uses BERT to extract cumulative textual feature representations and word-level features,applies Faster Region-based ConvolutionalNeuralNetwork(Faster R-CNN)to obtain image objects,and leverages ResNet-50 and Visual Geometry Group-19(VGG-19)to obtain image region features and global features.The image region features and word-level text features are then projected into a low-dimensional space to calculate a text-image affinity matrix for cross-modal message aggregation.The gated fusion network combines text and image region features to obtain adaptively aggregated features.The interaction matrix is derived through an attention mechanism and further integrated with global image features using a co-attention mechanism to producemultimodal representations.Finally,these fused features are fed into a classifier for news categorization.Experiments were conducted on two public datasets,Twitter and Weibo.Results show that the proposed model achieves accuracy rates of 91.8%and 88.7%on the two datasets,respectively,significantly outperforming traditional unimodal and existing multimodal models.展开更多
In this study,the main properties of the hydraulic jump in an asymmetric trapezoidal flume are analyzed experimentally,including the so-called sequent depths,characteristic lengths,and efficiency.In particular,an asym...In this study,the main properties of the hydraulic jump in an asymmetric trapezoidal flume are analyzed experimentally,including the so-called sequent depths,characteristic lengths,and efficiency.In particular,an asymmetric trapezoidal flume with a length of 7 m and a width of 0.304 m is considered,with the bottom of the flume transversely inclined at an angle of m=0.296 and vertical lateral sides.The corresponding inflow Froude number is allowed to range in the interval(1.40<F1<6.11).The properties of this jump are compared to those of hydraulic jumps in channels with other types of cross-sections.A relationship for calculating hydraulic jump efficiency is proposed for the considered flume.For F1>5,the hydraulic jump is found to be more effective than that occurring in triangular and symmetric trapezoidal channels.Also,when■mes>8 and■>5,the hydraulic jump in the asymmetrical trapezoidal channel downstream of a parallelogram sluice gate is completely formed as opposed to the situation where a triangular sluice is considered.展开更多
Modeling of unsteady aerodynamic loads at high angles of attack using a small amount of experimental or simulation data to construct predictive models for unknown states can greatly improve the efficiency of aircraft ...Modeling of unsteady aerodynamic loads at high angles of attack using a small amount of experimental or simulation data to construct predictive models for unknown states can greatly improve the efficiency of aircraft unsteady aerodynamic design and flight dynamics analysis.In this paper,aiming at the problems of poor generalization of traditional aerodynamic models and intelligent models,an intelligent aerodynamic modeling method based on gated neural units is proposed.The time memory characteristics of the gated neural unit is fully utilized,thus the nonlinear flow field characterization ability of the learning and training process is enhanced,and the generalization ability of the whole prediction model is improved.The prediction and verification of the model are carried out under the maneuvering flight condition of NACA0015 airfoil.The results show that the model has good adaptability.In the interpolation prediction,the maximum prediction error of the lift and drag coefficients and the moment coefficient does not exceed 10%,which can basically represent the variation characteristics of the entire flow field.In the construction of extrapolation models,the training model based on the strong nonlinear data has good accuracy for weak nonlinear prediction.Furthermore,the error is larger,even exceeding 20%,which indicates that the extrapolation and generalization capabilities need to be further optimized by integrating physical models.Compared with the conventional state space equation model,the proposed method can improve the extrapolation accuracy and efficiency by 78%and 60%,respectively,which demonstrates the applied potential of this method in aerodynamic modeling.展开更多
Aerial threat assessment is a crucial link in modern air combat, whose result counts a great deal for commanders to make decisions. With the consideration that the existing threat assessment methods have difficulties ...Aerial threat assessment is a crucial link in modern air combat, whose result counts a great deal for commanders to make decisions. With the consideration that the existing threat assessment methods have difficulties in dealing with high dimensional time series target data, a threat assessment method based on self-attention mechanism and gated recurrent unit(SAGRU) is proposed. Firstly, a threat feature system including air combat situations and capability features is established. Moreover, a data augmentation process based on fractional Fourier transform(FRFT) is applied to extract more valuable information from time series situation features. Furthermore, aiming to capture key characteristics of battlefield evolution, a bidirectional GRU and SA mechanisms are designed for enhanced features.Subsequently, after the concatenation of the processed air combat situation and capability features, the target threat level will be predicted by fully connected neural layers and the softmax classifier. Finally, in order to validate this model, an air combat dataset generated by a combat simulation system is introduced for model training and testing. The comparison experiments show the proposed model has structural rationality and can perform threat assessment faster and more accurately than the other existing models based on deep learning.展开更多
This study proposed a new real-time manufacturing process monitoring method to monitor and detect process shifts in manufacturing operations.Since real-time production process monitoring is critical in today’s smart ...This study proposed a new real-time manufacturing process monitoring method to monitor and detect process shifts in manufacturing operations.Since real-time production process monitoring is critical in today’s smart manufacturing.The more robust the monitoring model,the more reliable a process is to be under control.In the past,many researchers have developed real-time monitoring methods to detect process shifts early.However,thesemethods have limitations in detecting process shifts as quickly as possible and handling various data volumes and varieties.In this paper,a robust monitoring model combining Gated Recurrent Unit(GRU)and Random Forest(RF)with Real-Time Contrast(RTC)called GRU-RF-RTC was proposed to detect process shifts rapidly.The effectiveness of the proposed GRU-RF-RTC model is first evaluated using multivariate normal and nonnormal distribution datasets.Then,to prove the applicability of the proposed model in a realmanufacturing setting,the model was evaluated using real-world normal and non-normal problems.The results demonstrate that the proposed GRU-RF-RTC outperforms other methods in detecting process shifts quickly with the lowest average out-of-control run length(ARL1)in all synthesis and real-world problems under normal and non-normal cases.The experiment results on real-world problems highlight the significance of the proposed GRU-RF-RTC model in modern manufacturing process monitoring applications.The result reveals that the proposed method improves the shift detection capability by 42.14%in normal and 43.64%in gamma distribution problems.展开更多
Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of suppliers.Based on previous studies,commercial GaN-based electronics are expected to be ...Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of suppliers.Based on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in space.To test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and Transphorm.The p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive direction.This dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated devices.As such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.展开更多
增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型...增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型器件制备方法。首先,概述了当前制约P-GaN栅结构GaN基HEMT器件发展的首要问题,从器件结构与器件制备工艺这2个角度,综述了其性能优化举措方面的最新研究进展。然后,通过对研究进展的分析,总结了当前研究工作面临的挑战以及解决方法。最后,对未来的发展前景、发展方向进行了展望。展开更多
基金The authors thank the Yayasan Universiti Teknologi PETRONAS(YUTP FRG Grant No.015LC0-428)at Universiti Teknologi PETRO-NAS for supporting this study.
文摘Static Poisson’s ratio(vs)is crucial for determining geomechanical properties in petroleum applications,namely sand production.Some models have been used to predict vs;however,the published models were limited to specific data ranges with an average absolute percentage relative error(AAPRE)of more than 10%.The published gated recurrent unit(GRU)models do not consider trend analysis to show physical behaviors.In this study,we aim to develop a GRU model using trend analysis and three inputs for predicting n s based on a broad range of data,n s(value of 0.1627-0.4492),bulk formation density(RHOB)(0.315-2.994 g/mL),compressional time(DTc)(44.43-186.9 μs/ft),and shear time(DTs)(72.9-341.2μ s/ft).The GRU model was evaluated using different approaches,including statistical error an-alyses.The GRU model showed the proper trends,and the model data ranges were wider than previous ones.The GRU model has the largest correlation coefficient(R)of 0.967 and the lowest AAPRE,average percent relative error(APRE),root mean square error(RMSE),and standard deviation(SD)of 3.228%,1.054%,4.389,and 0.013,respectively,compared to other models.The GRU model has a high accuracy for the different datasets:training,validation,testing,and the whole datasets with R and AAPRE values were 0.981 and 2.601%,0.966 and 3.274%,0.967 and 3.228%,and 0.977 and 2.861%,respectively.The group error analyses of all inputs show that the GRU model has less than 5% AAPRE for all input ranges,which is superior to other models that have different AAPRE values of more than 10% at various ranges of inputs.
基金supported by the National Natural Science Foundation of China(62150710548,61834008,U21A20493)the National Key Research and Development Program of China(2022YFB2802801)+2 种基金the Key Research and Development Program of Jiangsu Province(BE2021008-1)the Suzhou Key Laboratory of New-type Laser Display Technology(SZS2022007)the Natural Science Foundation of Jiangsu Province(BK20232042).
文摘Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this paper.Different annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping ranges.Hole concentration,resistivity and mobility were characterized by room-temperature Hall measurements.The Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the impurities.The hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature data.The appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.
基金supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400in part by the Youth Innovation Promotion Association of Chinese Academy Sciences (CAS)+4 种基金in part by the CAS-Croucher Funding Scheme under Grant CAS22801in part by National Natural Science Foundation of China under Grant 62334012, Grant 62074161, Grant 62004213, Grant U20A20208, and Grant 62304252in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018in part by the University of CASin part by the IMECAS-HKUST-Joint Laboratory of Microelectronics
文摘In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.
基金supported by the National Natural Science Foundation of China(Grant No.1237310)The Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321)+1 种基金the National Natural Science Foundation of China(Grant No.92163204)The Key Research and Development Program of Jiangsu Province(Grant No.BE2022057-1)。
文摘In this paper, we explore the electrical characteristics of high-electron-mobility transistors(HEMTs) using a TaN/AlGaN/GaN metal insulating semiconductor(MIS) structure. The high-resistance tantalum nitride(TaN) film prepared by magnetron sputtering as the gate dielectric layer of the device achieved an effective reduction of electronic states at the TaN/AlGaN interface, and reducing the gate leakage current of the MIS HEMT, its performance was enhanced. The HEMT exhibited a low gate leakage current of 2.15 × 10^(-7) mA/mm and a breakdown voltage of 1180 V. Furthermore, the MIS HEMT displayed exceptional operational stability during dynamic tests, with dynamic resistance remaining only 1.39 times even under 400 V stress.
基金supported in part by the National Key Research and Development Program of China under Grant2022YFB3604400in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS)+5 种基金in part by CAS-Croucher Funding Scheme under Grant CAS22801in part by National Natural Science Foundation of China under Grant 62334012,Grant 62074161,Grant 62004213,Grant U20A20208Grant 62304252in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018in part by the University of CASin part by IMECAS-HKUST-Joint Laboratory of Microelectronics。
文摘In this study,we present the development of self-aligned p-channel Ga N back gate injection transistors(SA-BGITs)that exhibit a high ON-state current.This achievement is primarily attributed to the conductivity modulation effect of the 2-D electron gas(2DEG,the back gate)beneath the 2-D hole gas(2DHG)channel.SA-BGITs with a gate length of 1μm have achieved an impressive peak drain current(I_(D,MAX))of 9.9 m A/mm.The fabricated SA-BGITs also possess a threshold voltage of 0.15 V,an exceptionally minimal threshold hysteresis of 0.2 V,a high switching ratio of 10~7,and a reduced ON-resistance(RON)of 548Ω·mm.Additionally,the SA-BGITs exhibit a steep sub-threshold swing(SS)of 173 mV/dec,further highlighting their suitability for integration into Ga N logic circuits.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11974336 and 12304401)the National Key R&D Program of China(Grant No.2017YFA0304100)+1 种基金the Key Project of Natural Science Research in Universities of Anhui Province(Grant No.KJ2021A1107)the Scientific Research Foundation of Suzhou University(Grant Nos.2020BS006 and 2021XJPT18).
文摘Spin qubits and superconducting qubits are promising candidates for realizing solid-state quantum information processors.Designing a hybrid architecture that combines the advantages of different qubits on the same chip is a highly desirable but challenging goal.Here we propose a hybrid architecture that utilizes a high-impedance SQUID array resonator as a quantum bus,thereby coherently coupling different solid-state qubits.We employ a resonant exchange spin qubit hosted in a triple quantum dot and a superconducting transmon qubit.Since this hybrid system is highly tunable,it can operate in a dispersive regime,where the interaction between the different qubits is mediated by virtual photons.By utilizing such interactions,entangling gate operations between different qubits can be realized in a short time of 30 ns with a fidelity of up to 96.5%under realistic parameter conditions.Further utilizing this interaction,remote entangled state between different qubits can be prepared and is robust to perturbations of various parameters.These results pave the way for exploring efficient fault-tolerant quantum computation on hybrid quantum architecture platforms.
基金financially supported by the National Natural Science Foundation of China(Nos.52272160,U2330112,and 52002254)Sichuan Science and Technology Foundation(Nos.2020YJ0262,2021YFH0127,2022YFH0083,2022YFSY0045,and 2023YFSY0002)+1 种基金the Chunhui Plan of Ministry of Education,Fundamental Research Funds for the Central Universities,China(No.YJ201893)the Foundation of Key Laboratory of Lidar and Device,Sichuan Province,China(No.LLD2023-006)。
文摘Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.
基金supported by the National Natural Science Foundation of China(No.62302540)with author Fangfang Shan.For more information,please visit their website at https://www.nsfc.gov.cn/(accessed on 31/05/2024)+3 种基金Additionally,it is also funded by the Open Foundation of Henan Key Laboratory of Cyberspace Situation Awareness(No.HNTS2022020)where Fangfang Shan is an author.Further details can be found at http://xt.hnkjt.gov.cn/data/pingtai/(accessed on 31/05/2024)supported by the Natural Science Foundation of Henan Province Youth Science Fund Project(No.232300420422)for more information,you can visit https://kjt.henan.gov.cn/2022/09-02/2599082.html(accessed on 31/05/2024).
文摘Social media has become increasingly significant in modern society,but it has also turned into a breeding ground for the propagation of misleading information,potentially causing a detrimental impact on public opinion and daily life.Compared to pure text content,multmodal content significantly increases the visibility and share ability of posts.This has made the search for efficient modality representations and cross-modal information interaction methods a key focus in the field of multimodal fake news detection.To effectively address the critical challenge of accurately detecting fake news on social media,this paper proposes a fake news detection model based on crossmodal message aggregation and a gated fusion network(MAGF).MAGF first uses BERT to extract cumulative textual feature representations and word-level features,applies Faster Region-based ConvolutionalNeuralNetwork(Faster R-CNN)to obtain image objects,and leverages ResNet-50 and Visual Geometry Group-19(VGG-19)to obtain image region features and global features.The image region features and word-level text features are then projected into a low-dimensional space to calculate a text-image affinity matrix for cross-modal message aggregation.The gated fusion network combines text and image region features to obtain adaptively aggregated features.The interaction matrix is derived through an attention mechanism and further integrated with global image features using a co-attention mechanism to producemultimodal representations.Finally,these fused features are fed into a classifier for news categorization.Experiments were conducted on two public datasets,Twitter and Weibo.Results show that the proposed model achieves accuracy rates of 91.8%and 88.7%on the two datasets,respectively,significantly outperforming traditional unimodal and existing multimodal models.
文摘In this study,the main properties of the hydraulic jump in an asymmetric trapezoidal flume are analyzed experimentally,including the so-called sequent depths,characteristic lengths,and efficiency.In particular,an asymmetric trapezoidal flume with a length of 7 m and a width of 0.304 m is considered,with the bottom of the flume transversely inclined at an angle of m=0.296 and vertical lateral sides.The corresponding inflow Froude number is allowed to range in the interval(1.40<F1<6.11).The properties of this jump are compared to those of hydraulic jumps in channels with other types of cross-sections.A relationship for calculating hydraulic jump efficiency is proposed for the considered flume.For F1>5,the hydraulic jump is found to be more effective than that occurring in triangular and symmetric trapezoidal channels.Also,when■mes>8 and■>5,the hydraulic jump in the asymmetrical trapezoidal channel downstream of a parallelogram sluice gate is completely formed as opposed to the situation where a triangular sluice is considered.
基金supported in part by the National Natural Science Foundation of China (No. 12202363)。
文摘Modeling of unsteady aerodynamic loads at high angles of attack using a small amount of experimental or simulation data to construct predictive models for unknown states can greatly improve the efficiency of aircraft unsteady aerodynamic design and flight dynamics analysis.In this paper,aiming at the problems of poor generalization of traditional aerodynamic models and intelligent models,an intelligent aerodynamic modeling method based on gated neural units is proposed.The time memory characteristics of the gated neural unit is fully utilized,thus the nonlinear flow field characterization ability of the learning and training process is enhanced,and the generalization ability of the whole prediction model is improved.The prediction and verification of the model are carried out under the maneuvering flight condition of NACA0015 airfoil.The results show that the model has good adaptability.In the interpolation prediction,the maximum prediction error of the lift and drag coefficients and the moment coefficient does not exceed 10%,which can basically represent the variation characteristics of the entire flow field.In the construction of extrapolation models,the training model based on the strong nonlinear data has good accuracy for weak nonlinear prediction.Furthermore,the error is larger,even exceeding 20%,which indicates that the extrapolation and generalization capabilities need to be further optimized by integrating physical models.Compared with the conventional state space equation model,the proposed method can improve the extrapolation accuracy and efficiency by 78%and 60%,respectively,which demonstrates the applied potential of this method in aerodynamic modeling.
基金supported by the National Natural Science Foundation of China (6202201562088101)+1 种基金Shanghai Municipal Science and Technology Major Project (2021SHZDZX0100)Shanghai Municip al Commission of Science and Technology Project (19511132101)。
文摘Aerial threat assessment is a crucial link in modern air combat, whose result counts a great deal for commanders to make decisions. With the consideration that the existing threat assessment methods have difficulties in dealing with high dimensional time series target data, a threat assessment method based on self-attention mechanism and gated recurrent unit(SAGRU) is proposed. Firstly, a threat feature system including air combat situations and capability features is established. Moreover, a data augmentation process based on fractional Fourier transform(FRFT) is applied to extract more valuable information from time series situation features. Furthermore, aiming to capture key characteristics of battlefield evolution, a bidirectional GRU and SA mechanisms are designed for enhanced features.Subsequently, after the concatenation of the processed air combat situation and capability features, the target threat level will be predicted by fully connected neural layers and the softmax classifier. Finally, in order to validate this model, an air combat dataset generated by a combat simulation system is introduced for model training and testing. The comparison experiments show the proposed model has structural rationality and can perform threat assessment faster and more accurately than the other existing models based on deep learning.
基金support from the National Science and Technology Council of Taiwan(Contract Nos.111-2221 E-011081 and 111-2622-E-011019)the support from Intelligent Manufacturing Innovation Center(IMIC),National Taiwan University of Science and Technology(NTUST),Taipei,Taiwan,which is a Featured Areas Research Center in Higher Education Sprout Project of Ministry of Education(MOE),Taiwan(since 2023)was appreciatedWe also thank Wang Jhan Yang Charitable Trust Fund(Contract No.WJY 2020-HR-01)for its financial support.
文摘This study proposed a new real-time manufacturing process monitoring method to monitor and detect process shifts in manufacturing operations.Since real-time production process monitoring is critical in today’s smart manufacturing.The more robust the monitoring model,the more reliable a process is to be under control.In the past,many researchers have developed real-time monitoring methods to detect process shifts early.However,thesemethods have limitations in detecting process shifts as quickly as possible and handling various data volumes and varieties.In this paper,a robust monitoring model combining Gated Recurrent Unit(GRU)and Random Forest(RF)with Real-Time Contrast(RTC)called GRU-RF-RTC was proposed to detect process shifts rapidly.The effectiveness of the proposed GRU-RF-RTC model is first evaluated using multivariate normal and nonnormal distribution datasets.Then,to prove the applicability of the proposed model in a realmanufacturing setting,the model was evaluated using real-world normal and non-normal problems.The results demonstrate that the proposed GRU-RF-RTC outperforms other methods in detecting process shifts quickly with the lowest average out-of-control run length(ARL1)in all synthesis and real-world problems under normal and non-normal cases.The experiment results on real-world problems highlight the significance of the proposed GRU-RF-RTC model in modern manufacturing process monitoring applications.The result reveals that the proposed method improves the shift detection capability by 42.14%in normal and 43.64%in gamma distribution problems.
基金Thisworkwas supported by the National Key R&D Programof China(No.2017YFB0402800,2017YFB0402802).
文摘Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of suppliers.Based on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in space.To test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and Transphorm.The p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive direction.This dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated devices.As such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.
文摘增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型器件制备方法。首先,概述了当前制约P-GaN栅结构GaN基HEMT器件发展的首要问题,从器件结构与器件制备工艺这2个角度,综述了其性能优化举措方面的最新研究进展。然后,通过对研究进展的分析,总结了当前研究工作面临的挑战以及解决方法。最后,对未来的发展前景、发展方向进行了展望。
