We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors.We demonstrate that the localization length of t...We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors.We demonstrate that the localization length of the wave function in the spatial distribution is able to be manipulated by the gate electric field.The transition temperatures regulated as the function of the localization length and the density of states near the Fermi energy level allow us to understand the electron hopping behaviours under the influence of thermal activation energy and Coulomb interaction energy.This is useful for future quantum information processing by single dopant atoms in silicon.展开更多
The luminescence intensity regulation of organic light-emitting transistor(OLED)device can be achieved effectively by the combination of graphene vertical field effect transistor(GVFET)and OLED.In this paper,we fabric...The luminescence intensity regulation of organic light-emitting transistor(OLED)device can be achieved effectively by the combination of graphene vertical field effect transistor(GVFET)and OLED.In this paper,we fabricate and characterize the graphene vertical field-effect transistor with gate dielectric of ion-gel film,confirming that its current switching ratio reaches up to 102.Because of the property of high light transmittance in ion-gel film,the OLED device prepared with graphene/PEDOT:PSS as composite anode exhibits good optical properties.We also prepare the graphene vertical organic light-emitting field effect transistor(GVOLEFET)by the combination of GVFET and graphene OLED,analyzing its electrical and optical properties,and confirming that the luminescence intensity can be significantly changed by regulating the gate voltage.展开更多
As a member of the inwardly rectifying channel (Kir) family, Kir2.1 allows to influx the cell more easily than to efflux, a biophysical phenomenon named inward rectification. The function of Kir2.1 is to set the resti...As a member of the inwardly rectifying channel (Kir) family, Kir2.1 allows to influx the cell more easily than to efflux, a biophysical phenomenon named inward rectification. The function of Kir2.1 is to set the resting membrane potential and modulate membrane excitability. It has been reported that residue E224 plays a key role in regulating inward rectification. The mutant Kir2.1 (E224G) displays weaker inward rectification than the WT channel. Gating of Kir2.1 depends on the membrane lipid, PIP<sub>2</sub>, such that the channel gates are closed in the absence of PIP<sub>2</sub>. Here we perform electrophysiological and computational approaches, and demonstrate that E224 also plays an important role in the PIP<sub>2</sub>-dependent activation of Kir2.1 in addition to its influence on inward rectification. The E224G mutant takes 4.5 times longer to be activated by PIP<sub>2</sub>. To probe the mechanism by which E224G slows the channel opening kinetics, we perform targeted molecular dynamics simulations and find that the mutant weakens the interactions between CD-loop and C-linker (H221-R189) and the adjacent G-loops (R312-E303) which are thought to stabilize the open state of the channel in our previous work. These data provide new insights into the regulation of Kir2.1 channel activity and suggest that a common mechanism may be involved in the distinct biophysical processes, such as inward rectification and PIP<sub>2</sub>-induced gating.展开更多
This paper presents a fully on-chip NMOS low-dropout regulator（LDO） for portable applications with quasi floating gate pass element and fast transient response.The quasi floating gate structure makes the gate of the...This paper presents a fully on-chip NMOS low-dropout regulator（LDO） for portable applications with quasi floating gate pass element and fast transient response.The quasi floating gate structure makes the gate of the NMOS transistor only periodically charged or refreshed by the charge pump,which allows the charge pump to be a small economical circuit with small silicon area.In addition,a variable reference circuit is introduced enlarging the dynamic range of error amplifier during load transient.The proposed LDO has been implemented in a 0.35 μm BCD process.From experimental results,the regulator can operate with a minimum dropout voltage of 250 mV at a maximum 1 A load and Iq of 395 μA.Under full-range load current step,the voltage undershoot and overshoot of the proposed LDO are reduced to 50 and 26 mV,respectively.展开更多
Background Aldosterone blockers could reduce the incidence of ventricular arrhythmias in myocardial infarction（MI） patients by regulating hyperpolarization-activated cyclic nucleotide-gated channel（HCN） expression...Background Aldosterone blockers could reduce the incidence of ventricular arrhythmias in myocardial infarction（MI） patients by regulating hyperpolarization-activated cyclic nucleotide-gated channel（HCN） expression.But the mechanism underling HCN expression is unclear.Methods Eighteen rats surviving 24 hours postMI were randomly divided into 3 groups：MI,spironolactone,and spironolactone ＋ antagomir-133（mi RNA-133suppression）.Sham group rats had a suture loosely tied around the left coronary artery,without ligation.HCN2 and HCN4 protein and m RNA level,and mi RNA-133 level in the border zone of post-MI 1 week myocardium were measured.Results Spironolactone significantly increased mi RNA-133 levels and down-regulated HCN2 and HCN4 at both m RNA and protein levels in post-MI border zone myocardium.Antagomir-133 reduced the effects of spironolactone on HCN2 and HCN4 protein levels.Conclusions The results suggest that mi RNA-133 is involved in spironolactone induced HCN expression,and partially contributed to post-MI ventricular arrhythmias.展开更多
基金supported by the National Key R&D Program of China(Grant No.2016YFA0200503)。
文摘We investigate gate-regulated transition temperatures for electron hopping behaviours through discrete ionized dopant atoms in silicon junctionless nanowire transistors.We demonstrate that the localization length of the wave function in the spatial distribution is able to be manipulated by the gate electric field.The transition temperatures regulated as the function of the localization length and the density of states near the Fermi energy level allow us to understand the electron hopping behaviours under the influence of thermal activation energy and Coulomb interaction energy.This is useful for future quantum information processing by single dopant atoms in silicon.
基金Project supported by the National Natural Science Foundation of China(Grant No.31872901)the National Key Research and Development Program of China(Grant No.2016YFA0501602).
文摘The luminescence intensity regulation of organic light-emitting transistor(OLED)device can be achieved effectively by the combination of graphene vertical field effect transistor(GVFET)and OLED.In this paper,we fabricate and characterize the graphene vertical field-effect transistor with gate dielectric of ion-gel film,confirming that its current switching ratio reaches up to 102.Because of the property of high light transmittance in ion-gel film,the OLED device prepared with graphene/PEDOT:PSS as composite anode exhibits good optical properties.We also prepare the graphene vertical organic light-emitting field effect transistor(GVOLEFET)by the combination of GVFET and graphene OLED,analyzing its electrical and optical properties,and confirming that the luminescence intensity can be significantly changed by regulating the gate voltage.
基金Supported by the National Natural Science Foundation for Distinguished Young Scholars of Hebei Province under Grant Nos C2015202340 and C2013202244the Foundation for Outstanding Talents of Hebei Province under Grant No C201400305+3 种基金the National Natural Science Foundation of China under Grant Nos 11247010,11175055,11475053,11347017,31400711 and 11647121the NIH R01 under Grant No HL059949-18the Foundation for the Science and Technology Program of Higher Education Institutions of Hebei Province under Grant No QN2016113the Scientific Innovation Fund for Excellent Young Scientists of Hebei University of Technology under Grant No 2015010
文摘As a member of the inwardly rectifying channel (Kir) family, Kir2.1 allows to influx the cell more easily than to efflux, a biophysical phenomenon named inward rectification. The function of Kir2.1 is to set the resting membrane potential and modulate membrane excitability. It has been reported that residue E224 plays a key role in regulating inward rectification. The mutant Kir2.1 (E224G) displays weaker inward rectification than the WT channel. Gating of Kir2.1 depends on the membrane lipid, PIP<sub>2</sub>, such that the channel gates are closed in the absence of PIP<sub>2</sub>. Here we perform electrophysiological and computational approaches, and demonstrate that E224 also plays an important role in the PIP<sub>2</sub>-dependent activation of Kir2.1 in addition to its influence on inward rectification. The E224G mutant takes 4.5 times longer to be activated by PIP<sub>2</sub>. To probe the mechanism by which E224G slows the channel opening kinetics, we perform targeted molecular dynamics simulations and find that the mutant weakens the interactions between CD-loop and C-linker (H221-R189) and the adjacent G-loops (R312-E303) which are thought to stabilize the open state of the channel in our previous work. These data provide new insights into the regulation of Kir2.1 channel activity and suggest that a common mechanism may be involved in the distinct biophysical processes, such as inward rectification and PIP<sub>2</sub>-induced gating.
文摘This paper presents a fully on-chip NMOS low-dropout regulator（LDO） for portable applications with quasi floating gate pass element and fast transient response.The quasi floating gate structure makes the gate of the NMOS transistor only periodically charged or refreshed by the charge pump,which allows the charge pump to be a small economical circuit with small silicon area.In addition,a variable reference circuit is introduced enlarging the dynamic range of error amplifier during load transient.The proposed LDO has been implemented in a 0.35 μm BCD process.From experimental results,the regulator can operate with a minimum dropout voltage of 250 mV at a maximum 1 A load and Iq of 395 μA.Under full-range load current step,the voltage undershoot and overshoot of the proposed LDO are reduced to 50 and 26 mV,respectively.
基金National Natural Science Foundation of China(No.NSFC81100088)
文摘Background Aldosterone blockers could reduce the incidence of ventricular arrhythmias in myocardial infarction（MI） patients by regulating hyperpolarization-activated cyclic nucleotide-gated channel（HCN） expression.But the mechanism underling HCN expression is unclear.Methods Eighteen rats surviving 24 hours postMI were randomly divided into 3 groups：MI,spironolactone,and spironolactone ＋ antagomir-133（mi RNA-133suppression）.Sham group rats had a suture loosely tied around the left coronary artery,without ligation.HCN2 and HCN4 protein and m RNA level,and mi RNA-133 level in the border zone of post-MI 1 week myocardium were measured.Results Spironolactone significantly increased mi RNA-133 levels and down-regulated HCN2 and HCN4 at both m RNA and protein levels in post-MI border zone myocardium.Antagomir-133 reduced the effects of spironolactone on HCN2 and HCN4 protein levels.Conclusions The results suggest that mi RNA-133 is involved in spironolactone induced HCN expression,and partially contributed to post-MI ventricular arrhythmias.
