A Ti：sapphire crystal with a diameter of 235 mm and thickness of 72 mm was grown by the heat exchange method（HEM）. The absorption intensity of the crystal at 532 nm averaged at 91%. The figures of merit（FOMs）at d...A Ti：sapphire crystal with a diameter of 235 mm and thickness of 72 mm was grown by the heat exchange method（HEM）. The absorption intensity of the crystal at 532 nm averaged at 91%. The figures of merit（FOMs）at different positions of the crystal were measured and the FOM value in the central region was found to reach 90.The transmittance laser beam was intact with no obvious distortions and had only a small deformation compared with the incident laser beam. A small-signal amplification experiment was performed on the Ti：sapphire crystal and a gain of more than 6 times was achieved with a pump energy density of 1.98 J∕cm^2. These tests indicate that the 235 mm Ti：sapphire crystal has excellent optical qualities and will further improve the energy output of a 10 PW laser system.展开更多
The sapphire （Al2O3） single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire （Ф225 mm×205 mm, 27.5 kg） was grown by SAPMAC method （sapphire growth technique with...The sapphire （Al2O3） single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire （Ф225 mm×205 mm, 27.5 kg） was grown by SAPMAC method （sapphire growth technique with micro-pulling and shoulder-expanding at cooled center）. Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy （OM）, scanning electron microscopy （SEM） and electron probe microanalysis （EPMA）. The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material （Mo） at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality.展开更多
The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method.The influence of gas pressure on thermal field,solid-liquid interf...The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method.The influence of gas pressure on thermal field,solid-liquid interface shape,gas velocity field and von Mises stress were studied for the first time.It is found that the root of the seed melt when gas pressure equals to one atmosphere or more than one atmosphere,especially during the seeding period,this result is consistent with the experimental observation,and this paper presents three ways to solve this problem.The temperature gradient and stress decreases significantly as the gas pressure increases.The convexity of the solid-liquid interface slightly increases when the gas pressure increases.Numerical analysis was used to optimize the hot zone design.展开更多
In this paper, the modified slip/fracture activation model has been used in order to understand the mechanism of ductile-brittle transition on the R-plane of sapphire during ultra-precision machining by reflecting dir...In this paper, the modified slip/fracture activation model has been used in order to understand the mechanism of ductile-brittle transition on the R-plane of sapphire during ultra-precision machining by reflecting direction of resultant force. Anisotropic characteristics of crack morphology and ductility of machining depending on cutting direction were explained in detail with modified fracture cleavage and plastic deformation parameters. Through the analysis, it was concluded that crack morphologies were mainly determined by the interaction of multiple fracture systems activated while, critical depth of cut was determined by the dominant plastic deformation parameter. In addition to this, by using proportionality relationship between magnitude of resultant force and depth of cut in the ductile region, an empirical model for critical depth of cut was developed.展开更多
A novel tiled Ti:sapphire(Ti:S)amplifier was experimentally demonstrated with>1 J amplified chirped pulse output.Two Ti:S crystals having dimensions of 14 mm×14 mm×25 mm were tiled as the gain medium in a...A novel tiled Ti:sapphire(Ti:S)amplifier was experimentally demonstrated with>1 J amplified chirped pulse output.Two Ti:S crystals having dimensions of 14 mm×14 mm×25 mm were tiled as the gain medium in a four-pass amplifier.Maximum output energy of 1.18 J was obtained with 2.75 J pump energy.The energy conversion efficiency of the tiled Ti:S amplifier was comparable with a single Ti:S amplifier.The laser pulse having the maximum peak power of 28 TW was obtained after the compressor.Moreover,the influence of the beam gap on the far field was discussed.This novel tiled Ti:S amplifier technique can provide a potential way for 100 PW or EW lasers in the future.展开更多
基金supported by the National Natural Science Foundation of China(Nos.61775223 and 51502321)the Strategic Priority Research Program of Chinese Academy of Sciences(No.XDB1603)the Shanghai Scientific Research Project(Nos.16JC1420600 and 16DZ0503900)
文摘A Ti：sapphire crystal with a diameter of 235 mm and thickness of 72 mm was grown by the heat exchange method（HEM）. The absorption intensity of the crystal at 532 nm averaged at 91%. The figures of merit（FOMs）at different positions of the crystal were measured and the FOM value in the central region was found to reach 90.The transmittance laser beam was intact with no obvious distortions and had only a small deformation compared with the incident laser beam. A small-signal amplification experiment was performed on the Ti：sapphire crystal and a gain of more than 6 times was achieved with a pump energy density of 1.98 J∕cm^2. These tests indicate that the 235 mm Ti：sapphire crystal has excellent optical qualities and will further improve the energy output of a 10 PW laser system.
基金National Defensive Preliminary Research Funds of China (41312040404)
文摘The sapphire （Al2O3） single crystal is a kind of excellent infrared transmission window materials. A large-sized sapphire （Ф225 mm×205 mm, 27.5 kg） was grown by SAPMAC method （sapphire growth technique with micro-pulling and shoulder-expanding at cooled center）. Several kinds of inclusion in the large sapphire crystal were investigated by means of an optical microscopy （OM）, scanning electron microscopy （SEM） and electron probe microanalysis （EPMA）. The experimental results show that most inclusions are consisted of solid metallic and non-metallic particles as well as gas pores caused by the impurity of alumina as the raw material, the thermal dissociation of aluminum oxide melt and the reaction of the melt to the crucible material （Mo） at high temperatures. It is also found that in different crystal regions the inclusions are of varied sizes, morphology and chemical compositions. Finally, the measures to reduce and eliminate the inclusions are proposed to improve the crystal quality.
文摘The professional modeling software package CrysVUn was employed to study the process of a large sapphire single crystal growth using Kyropoulos method.The influence of gas pressure on thermal field,solid-liquid interface shape,gas velocity field and von Mises stress were studied for the first time.It is found that the root of the seed melt when gas pressure equals to one atmosphere or more than one atmosphere,especially during the seeding period,this result is consistent with the experimental observation,and this paper presents three ways to solve this problem.The temperature gradient and stress decreases significantly as the gas pressure increases.The convexity of the solid-liquid interface slightly increases when the gas pressure increases.Numerical analysis was used to optimize the hot zone design.
基金supported by the NSF under grant No. CMMI-1844821。
文摘In this paper, the modified slip/fracture activation model has been used in order to understand the mechanism of ductile-brittle transition on the R-plane of sapphire during ultra-precision machining by reflecting direction of resultant force. Anisotropic characteristics of crack morphology and ductility of machining depending on cutting direction were explained in detail with modified fracture cleavage and plastic deformation parameters. Through the analysis, it was concluded that crack morphologies were mainly determined by the interaction of multiple fracture systems activated while, critical depth of cut was determined by the dominant plastic deformation parameter. In addition to this, by using proportionality relationship between magnitude of resultant force and depth of cut in the ductile region, an empirical model for critical depth of cut was developed.
基金the National Key R&D Program of China(No.2017YFE0123700)the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB1603)+2 种基金the National Natural Science Foundation of China(No.61925507)the Program of Shanghai Academic/Technology Research Leader(No.18XD1404200)the Shanghai Municipal Science and Technology Major Project(No.2017SHZDZX02)。
文摘A novel tiled Ti:sapphire(Ti:S)amplifier was experimentally demonstrated with>1 J amplified chirped pulse output.Two Ti:S crystals having dimensions of 14 mm×14 mm×25 mm were tiled as the gain medium in a four-pass amplifier.Maximum output energy of 1.18 J was obtained with 2.75 J pump energy.The energy conversion efficiency of the tiled Ti:S amplifier was comparable with a single Ti:S amplifier.The laser pulse having the maximum peak power of 28 TW was obtained after the compressor.Moreover,the influence of the beam gap on the far field was discussed.This novel tiled Ti:S amplifier technique can provide a potential way for 100 PW or EW lasers in the future.
