Surface metallization of glass fiber(GF)/polyetheretherketone(PEEK)[GF/PEEK] is conducted by coating copper using electroplating and magnetron sputtering and the properties are determined by X-ray diffraction(XRD), sc...Surface metallization of glass fiber(GF)/polyetheretherketone(PEEK)[GF/PEEK] is conducted by coating copper using electroplating and magnetron sputtering and the properties are determined by X-ray diffraction(XRD), scanning electron microscopy(SEM), and electron backscatter diffraction(EBSD).The coating bonding strength is assessed by pull-out tests and scribing in accordance with GB/T 9286-1998.The results show that the Cu coating with a thickness of 30 μm deposited on GF/PEEK by magnetron sputtering has lower roughness, finer grain size, higher crystallinity, as well as better macroscopic compressive stress,bonding strength, and electrical conductivity than the Cu coating deposited by electroplating.展开更多
Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As...Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.展开更多
Al_(1-x)In_(x)N, a Ⅲ-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap e...Al_(1-x)In_(x)N, a Ⅲ-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al_(1-x)In_(x)N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering.The optical properties of Al_(1-x)In_(x)N will be enhanced by the polarization effect of a heterostructure composed of Al_(1-x)In_(x)N and other Ⅲ-nitride materials. An Al_(1-x)In_(x)N/Ga N visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A·W^(-1)under 365 nm wavelength illumination and the photodetector was determined to have the composition Al0.75In0.25N/GaN.A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al_(1-x)In_(x)N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method,this study expands the application of ternary alloy Al_(1-x)In_(x)N visible-light photodetectors in optical communication.展开更多
Vanadium films were deposited on Si(100)substrates at room temperature by direct current(DC)magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy(SEM)and atomic...Vanadium films were deposited on Si(100)substrates at room temperature by direct current(DC)magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy(SEM)and atomic force microscope(AFM).The oxidation resistance of films in air was studied using X-ray photoelectron spectroscopy(XPS)and transmission electron microscopy(TEM).The results showed that the amorphous vanadium film with a flatter surface had higher oxidation resistance than the crystalline film when exposed to atmosphere.The rapid formation of the thin oxide layer of amorphous vanadium film could protect the film from sustained oxidation,and the relative reasons were discussed.展开更多
Cu films with thickness of about 500nm were deposited on glass substrates without heat-my by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers were maintained at 390V×0.274, 4 30V× 0. 70...Cu films with thickness of about 500nm were deposited on glass substrates without heat-my by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers were maintained at 390V×0.274, 4 30V× 0. 70A and 450V×1.04A, and the corresponding deposition rates of Cu film reached 35nm/min, 104nm/min and 167nm/min. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characteristics of the films. The resistance of the films was measured using four-point probe technique. The amount of larger grains increases and the resistivity of the films decreases evidently with an increase in sputtering power. It is considered that the increase in deposition rate with sputtering power mainly weakens the influence of residual gas atoms on the growing film, and increases substrate and gas temperatures, resulting in the increase in grain size and the decrease in resistivity of the Cu film.展开更多
The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under...The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.展开更多
Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of a...Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.展开更多
V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studie...V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c-axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500 ℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithium or magnesium thin-film batteries.展开更多
The effects of substrate temperature and deposition time on the morphology and corrosion resistance of FeCoCrNiMo0.3 coating fabricated by magnetron sputtering were investigated by scanning electron microscopy and ele...The effects of substrate temperature and deposition time on the morphology and corrosion resistance of FeCoCrNiMo0.3 coating fabricated by magnetron sputtering were investigated by scanning electron microscopy and electrochemical tests.The FeCoCrNiMo0.3 coating was mainly composed of the face-centered cubic phase.High substrate temperature promoted the densification of the coating,and the pitting resistance and protective ability of the coating in 3.5wt%NaCl solution was thus improved.When the deposition time was prolonged at 500℃,the thickness of the coating remarkably increased.Meanwhile,the pitting resistance improved as the deposition time increased from 1 to 3 h;however,further improvement could not be obtained for the coating sputtered for 5 h.Overall,the pitting resistance of the FeCoCrNiMo0.3 coating sputtered at 500℃for 3 h exceeds those of most of the reported high-entropy alloy coatings.展开更多
Cu films with thickness of 630-1300nm were deposited on glass substrates withoutheating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to0.5, 1.0 and 1.5Pa respectively. The target voltage was f...Cu films with thickness of 630-1300nm were deposited on glass substrates withoutheating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the targetcurrent increased from 200 to 1150mA with Ar pressure increasing. X-ray diffrac-tion, scanning electron microscopy and atomic force microscopy were used to observethe structural characterization of the films. The resistivity of the films was measuredusing four-point probe technique. At all the Ar pressures, the Cu films have mixturecrystalline orientations of [111], [200] and [220] in the direction of the film growth.The film deposited at lower pressure shows more [111] orientation while that depositedat higher pressure has more [220] orientation. The amount of larger grains in the filmprepared at 0.5Pa Ar pressure is slightly less than that prepared at 1. 0Pa and 1.5PaAr pressures. The resistivities of the films prepared at three different Ar pressures rep-resent few differences, about 3-4 times of that of bulk material. Besides the depositionrate increases with Ar pressure because of the increase in target current. The contri-bution of the bombardment of energetic reflected Argon atoms to these phenomena isdiscussed.展开更多
Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electri...Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ITO films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ITO films at different degree. The maximum transmittance of the obtained ITO films in the visible range is over 92%, and the low resistivity for the ITO films are about 3.85×10-4 Ω·cm at 80 ℃, 80 W after annealing.展开更多
Ni-Cr System solar selective thin solid films were prepared by d.c. magnetron reactive sputtering under the atmosphere of O2 and N2. Ni-Cr alloy was chosen as target material and copper sheets as substrate. Using SEAL...Ni-Cr System solar selective thin solid films were prepared by d.c. magnetron reactive sputtering under the atmosphere of O2 and N2. Ni-Cr alloy was chosen as target material and copper sheets as substrate. Using SEAL Spectrophotometer and Talystep to analyze the relations between the selective characteristic and the structure, the formation and the thickness of the thin films. The aim is to obtain good solar selective thin films with high absorptance and low emittance, which is applied to flat plate solar heat collectors.展开更多
Columnar nanocrystalline aluminum nitride(cnc-AlN) thin films with(002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering.At the optimum sputt...Columnar nanocrystalline aluminum nitride(cnc-AlN) thin films with(002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering.At the optimum sputtering parameters, the deposited cnc-AlN thin films show a c-axis preferred orientation with a crystallite size of about 28 nm and surface roughness(RMS) of about 1.29 nm. The cnc-AlN thin films were well transparent with an optical band gap about 4.8 e V, and the residual compressive stress and the defect density in the film have been revealed by Ramon spectroscopy. Moreover, piezoelectric performances of the cnc-AlN thin films executed effectively in a film bulk acoustic resonator structure.展开更多
Gold films deposited by direct current magnetron sputtering are used for synchrotron radiation optics. In this study, the microstructure and surface roughness of gold films were investigated for the purpose of develop...Gold films deposited by direct current magnetron sputtering are used for synchrotron radiation optics. In this study, the microstructure and surface roughness of gold films were investigated for the purpose of developing high-reflectivity mirrors. The deposition process was first optimized. Films were fabricated at different sputtering powers (15, 40, 80, and 120 W) and characterized using grazing incidence X-ray reflectometry, X-ray diffraction, and atomic force microscopy. The results showed that all the films were highly textured, having a dominant Au (111) orientation, and the film deposited at 80 W had the lowest surface roughness. Subsequently, post-deposition annealing from 100 to 200℃ in a vacuum was performed on the films deposited at 80 W to investigate the effect of annealing on the microstructure and surface roughness of the films. The grain size, surface roughness, and their relationship were investigated as a function of annealing temperature. AFM and XRD results revealed that at annealing temperatures of 175 ℃ and below, microstructural change of the films was mainly manifested by the elimination of voids. At annealing temperatures higher than 175℃, grain coalescence occurred in addition to the void elimination, causing the surface roughness to increase.展开更多
Pseudobinary Ti 1 x Al x N films were synthesized on Si (100) wafer by DC magnetron sputtering method using Ti 1 x Al x alloy targets with different Al contents. The composition of the Ti 1 x Al x N films was determin...Pseudobinary Ti 1 x Al x N films were synthesized on Si (100) wafer by DC magnetron sputtering method using Ti 1 x Al x alloy targets with different Al contents. The composition of the Ti 1 x Al x N films was determined by electron probe microanalysis (EPMA). Structural characteristic was performed by X-ray diffraction (XRD), transmission electron microscopy (TEM), and high-resolution TEM (HRTEM). First principles virtual crystal calculations for the Ti 1 x Al x N disordered alloys were used for the XRD simulations. The crystalline structure of the Ti 0.61 Al 0.39 N film was found to be a metastable single phase with NaCl (B1) structure. Its lattice constant, determined by XRD, was less than that of pure TiN. With the increase of Al content, the lattice constant of B1 phase was continually decreased, while würtzite (B4) structure was observed in the Ti 0.40 Al 0.60 N film. When x reached 0.75, the B1 phase disappeared, and only B4 phase was remained. The critical Al content for the phase transition from NaCl to würtzite structure in this paper was about 0.60, which could be explained by both the thermodynamic model and the electron theory. As-deposited Ti 1 x Al x N films exhibited excellent mechanical properties. Hardness measurements of Ti 1 x Al x N films showed a high value of 45GPa for x=0.39 and was decreased to value of 27 GPa with increasing Al at x=0.60.展开更多
Ternary AlMgB thin films were synthesized on silicon (100) substrate at 573 K by radio frequency (RF) magnetron sputtering method using one Al/Mg co-target and one boron target. The thickness of the as-deposited thin ...Ternary AlMgB thin films were synthesized on silicon (100) substrate at 573 K by radio frequency (RF) magnetron sputtering method using one Al/Mg co-target and one boron target. The thickness of the as-deposited thin film was controlled to 500 nm by adjusting deposition time. The influences of sputtering powers on the elemental contents and structural and mechanical properties were investigated by electron probe microanalysis (EPMA), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HR-TEM), and nanoindentation system. At the same time, the ball-on-disk tribometer was used to measure the friction behavior of the films. Experimental results indicate that the as-deposited boron-rich films are primarily amorphous structure and possess a dramatic high hardness up to 39 GPa with 99.03 at.% boron. Obviously, it has exceeded the hardness value of 32 GPa of pure AlMgB 14 bulk material prepared by sintering method. Furthermore, the friction coefficients of the thin films exhibit an average value as low as 0.3, which is considered as the effect of self-lubricating.展开更多
Tc, Jc and Rs properties of large area double sided YBCO thin films deposited on LaAlO3 substrates by direct current sputtering were reported.Film thickness of the obtained thin films is over 300 nm, Tc ＞ 90 K; Rs ca...Tc, Jc and Rs properties of large area double sided YBCO thin films deposited on LaAlO3 substrates by direct current sputtering were reported.Film thickness of the obtained thin films is over 300 nm, Tc ＞ 90 K; Rs can be as low as less than 1.0 mΩ(77 K, 10 GHz).Homogenousity of the properties around the plane was studied.Under the measnous distributions.Influences of substrate temperature and Ar and O2 pressures on properties of the double-sided thin films were discussed.展开更多
The distribution of plasma density in the vicinity of the W Mo alloy source in the process of double glow discharge plasma surface alloying was diagnosed using the moveable Langmuir probe. The sputtering law, surface ...The distribution of plasma density in the vicinity of the W Mo alloy source in the process of double glow discharge plasma surface alloying was diagnosed using the moveable Langmuir probe. The sputtering law, surface composition and morphological variation of the W Mo alloy source was studied. The experimental results show that there exists obvious preferential sputtering on the surface of the W Mo alloy source under the argon ion bombardment; the stable period is reached after a transitional period, and the preferential sputtering occurs in a definite range of composition(mole fraction): 70%～75% Mo, 22%～25% W; there appears segregation on the surface of the W Mo alloy source.展开更多
In recent years,Cu_(2)ZnSnS_(4)(CZTS)semiconductor materials have received intensive attention in the field of thin-film solar cells owing to its non-toxic and low-cost elements.In this work,double-pressure sputtering...In recent years,Cu_(2)ZnSnS_(4)(CZTS)semiconductor materials have received intensive attention in the field of thin-film solar cells owing to its non-toxic and low-cost elements.In this work,double-pressure sputtering technology is applied to obtain highly efficient and ultra-thin(-450 nm)pure Cu_(2)ZnSnS_(4)(CZTS)solar cell.Using mixed materials with sulfides and copper powder as a quaternary target via spark plasma sintering(SPS)method and adopting double-layer sputtering(high+low pressure),a highly adhesive and large-grained CZTS thin film is achieved.As a result,the damage to the surface of Mo contact is decreased so that the reflectivity of incident light can be improved.Moreover,the composition of CZTS film was more uniform and the secondary phase separation at the Mo interface was reduced.Therefore,the interface defect state and deep level defect density in corresponding device with double-pressure is reduced and the ratio of depletion thickness to absorption layer thickness can reached to 0.58,which promoted the collection of photogenerated carriers.Finally,an efficiency of 9.3%for ultra-thin(~450 nm)CZTS film solar cell is obtained.展开更多
To date,lithium-ion batteries are becoming increasingly significant in the application of portable devices and electrical vehicles,and revolutionary progress in theoretical research and industrial application has been...To date,lithium-ion batteries are becoming increasingly significant in the application of portable devices and electrical vehicles,and revolutionary progress in theoretical research and industrial application has been achieved.However,the commercial polyolefin separators with unsatisfying electrolytes affinity and poor thermal stability have extremely restricted the further application of lithium-ion batteries,especially in the high-temperature fields.In this work,magnetron sputtering deposition technique is employed to modify the commercial polyimide separator by coating silicon nitride on both sides.Magnetron sputtering deposition modified polyimide(MSD-PI)composite separator shows high thermal stability and ionic conductivity.More importantly,compared with the cells using Celgard separator,the cells with MSD-PI separator exhibit superior electrochemical performance,especially long-term cycle performance under high temperature environment,owing to the high thermal conductivity of surface Si3 N4 particles.Hence,lithium-ion batteries with MSD-PI separator are capable of improving thermal safety and capacity retention,which demonstrates that magnetron sputtering deposition technique could be regarded as a promising strategy to develop advanced organic/inorganic composite separators for high-temperature lithium-ion batteries.展开更多
基金Funded by Shenzhen-Hong Kong Innovative Collaborative Research and Development Program (Nos.SGLH20181109 110802117, CityU 9240014)Innovation Project of Southwestern Institute of Physics (Nos.202001XWCXYD002, 202301XWCX003)CNNC Young Talent Program (No.2023JZYF-01)。
文摘Surface metallization of glass fiber(GF)/polyetheretherketone(PEEK)[GF/PEEK] is conducted by coating copper using electroplating and magnetron sputtering and the properties are determined by X-ray diffraction(XRD), scanning electron microscopy(SEM), and electron backscatter diffraction(EBSD).The coating bonding strength is assessed by pull-out tests and scribing in accordance with GB/T 9286-1998.The results show that the Cu coating with a thickness of 30 μm deposited on GF/PEEK by magnetron sputtering has lower roughness, finer grain size, higher crystallinity, as well as better macroscopic compressive stress,bonding strength, and electrical conductivity than the Cu coating deposited by electroplating.
基金the financial support from the National Key Research and Development Program of China(No.2017YFB0305500)the State Key Laboratory of Powder Metallurgy,Central South University,Changsha,China.
文摘Pure cobalt(Co)thin films were fabricated by direct current magnetron sputtering,and the effects of sputtering power and pres-sure on the microstructure and electromagnetic properties of the films were investigated.As the sputtering power increases from 15 to 60 W,the Co thin films transition from an amorphous to a polycrystalline state,accompanied by an increase in the intercrystal pore width.Simultaneously,the resistivity decreases from 276 to 99μΩ·cm,coercivity increases from 162 to 293 Oe,and in-plane magnetic aniso-tropy disappears.As the sputtering pressure decreases from 1.6 to 0.2 Pa,grain size significantly increases,resistivity significantly de-creases,and the coercivity significantly increases(from 67 to 280 Oe),which can be attributed to the increase in defect width.Corres-pondingly,a quantitative model for the coercivity of Co thin films was formulated.The polycrystalline films sputtered under pressures of 0.2 and 0.4 Pa exhibit significant in-plane magnetic anisotropy,which is primarily attributable to increased microstress.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61974144, 62004127, and 12074263)Key-Area Research and Development Program of Guangdong Province (Grant Nos. 2020B010174003 and 2020B010169001)+2 种基金Guangdong Science Foundation for Distinguished Young Scholars (Grant No. 2022B1515020073)the Science and Technology Foundation of Shenzhen (Grant No. JSGG20191129114216474)the Open Project of State Key Laboratory of Functional Materials for Informatics。
文摘Al_(1-x)In_(x)N, a Ⅲ-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al_(1-x)In_(x)N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering.The optical properties of Al_(1-x)In_(x)N will be enhanced by the polarization effect of a heterostructure composed of Al_(1-x)In_(x)N and other Ⅲ-nitride materials. An Al_(1-x)In_(x)N/Ga N visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A·W^(-1)under 365 nm wavelength illumination and the photodetector was determined to have the composition Al0.75In0.25N/GaN.A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al_(1-x)In_(x)N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method,this study expands the application of ternary alloy Al_(1-x)In_(x)N visible-light photodetectors in optical communication.
基金Funded by the Science Challenge Project(No.TZ2016001)the National Natural Science Foundation of China(Nos.11602251,51861145306 and 51872212)+3 种基金the 111 Project(No.B13035)Joint Fund of Ministry of Education for Pre-research of Equipment(No.6141A02022257)supported by the International Science&Technology Cooperation Program of China(Nos.2018YFE0103600,2014DFA53090)the Technological Innovation of Hubei Province,China(No.2019AAA030)。
文摘Vanadium films were deposited on Si(100)substrates at room temperature by direct current(DC)magnetron sputtering.The microstructure and surface morphology were studied using scanning electron microscopy(SEM)and atomic force microscope(AFM).The oxidation resistance of films in air was studied using X-ray photoelectron spectroscopy(XPS)and transmission electron microscopy(TEM).The results showed that the amorphous vanadium film with a flatter surface had higher oxidation resistance than the crystalline film when exposed to atmosphere.The rapid formation of the thin oxide layer of amorphous vanadium film could protect the film from sustained oxidation,and the relative reasons were discussed.
基金the National Naturul Science Foundation of China for thefinancial support (Grant No.19974005).
文摘Cu films with thickness of about 500nm were deposited on glass substrates without heat-my by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers were maintained at 390V×0.274, 4 30V× 0. 70A and 450V×1.04A, and the corresponding deposition rates of Cu film reached 35nm/min, 104nm/min and 167nm/min. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characteristics of the films. The resistance of the films was measured using four-point probe technique. The amount of larger grains increases and the resistivity of the films decreases evidently with an increase in sputtering power. It is considered that the increase in deposition rate with sputtering power mainly weakens the influence of residual gas atoms on the growing film, and increases substrate and gas temperatures, resulting in the increase in grain size and the decrease in resistivity of the Cu film.
基金supported by a 2-Year Research Grant of Pusan National University,Korea
文摘The CrN and Cr-Al-Si-N films were deposited on Si wafer and SUS 304 substrates by a hybrid coating system with high power impulse magnetron sputtering (HIPIMS) and a DC pulse sputtering using Cr and AlSi targets under N2/Ar atmosphere.By varying the sputtering current of the AlSi target in the range of 0-2.5 A,both the Al and Si contents in the films increased gradually from 0 to 19.1% and 11.1% (mole fraction),respectively.The influences of the AlSi cathode DC pulse current on the microstructure,phase constituents,mechanical properties,and oxidation behaviors of the Cr-Al-Si-N films were investigated systematically.The results indicate that the as-deposited Cr-Al-Si-N films possess the typical nanocomposite structure,namely the face centered cubic (Cr,Al)N nano-crystallites are embedded in the amorphous Si3N4 matrix.With increasing the Al and Si contents,the hardness of the film first increases from 20.8 GPa for the CrN film to the peak value of 29.4 GPa for the Cr0.23Al0.14Si0.07 N film,and then decreases gradually.In the meanwhile,the Cr0.23Al0.14Si0.07N film also possesses excellent high-temperature oxidation resistance that is much better than that of the CrN film at 900 or 1000 °C.
文摘Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) and glass substrates by two different sputtering techniques radio frequency magnetron cosputtering of AZO and ZnO targets and sputtering of an AZO target. The dependence of the photoluminescence (PL) and transmittance properties of the AZO films deposited by cosputtering and sputtering on the AZO/ZnO target power ratio, R and the O2/Ar flow ratio, r were investigated, respectively. Only a deep level emission peak appears in the PL spectra of cosputtered AZO films whereas both UV emission and deep level emission peaks are observed in the PL spectra of sputtered AZO films. The absorption edges in the transmittance spectra of the AZO films shift to the lower wavelength region as R and r increase. Effects of crystallinity, surface roughness, PL on the transmittance of the AZO films were also explained using the X-ray diffraction (XRD), atomic force microscopy (AFM), and PL analysis results.
基金[This work was financially supported by the National Natural Science Foundation of China (No.50402024)Natural Science Foundation of Gansu Province (No.ZS 041-A25-033).
文摘V2O5 films were prepared on silicon wafers by DC magnetron sputtering and post-annealing under various conditions. The influence of depositing and post-annealing temperatures on microstructure of V2O5 films was studied by XRD and Raman scattering measurements. The results reveal that sputtered V2O5 films show preferred growth orientation along (001) planes and the c-axis is perpendicular to the silicon substrate surface. It is interesting to find that both the V2O5 film deposited at temperature of 511 ℃ and the one annealed at 500 ℃ exhibit desirable layer-type structure of orthorhombic symmetry. Such layer-typed V2O5 films are promising candidates for cathodes of rechargeable lithium or magnesium thin-film batteries.
基金the National Science and Technology Major Project of China(No.2017-VII-0012-0109).
文摘The effects of substrate temperature and deposition time on the morphology and corrosion resistance of FeCoCrNiMo0.3 coating fabricated by magnetron sputtering were investigated by scanning electron microscopy and electrochemical tests.The FeCoCrNiMo0.3 coating was mainly composed of the face-centered cubic phase.High substrate temperature promoted the densification of the coating,and the pitting resistance and protective ability of the coating in 3.5wt%NaCl solution was thus improved.When the deposition time was prolonged at 500℃,the thickness of the coating remarkably increased.Meanwhile,the pitting resistance improved as the deposition time increased from 1 to 3 h;however,further improvement could not be obtained for the coating sputtered for 5 h.Overall,the pitting resistance of the FeCoCrNiMo0.3 coating sputtered at 500℃for 3 h exceeds those of most of the reported high-entropy alloy coatings.
基金The authors would like to thank Prof. Y.B. Wang and Mr. S. Liang of the Department of Material Physics for supporting AFM observations. The authors also would like to thank Ms. J.P. He of the State Key Laboratory for Advanced Metals and Materials for sup
文摘Cu films with thickness of 630-1300nm were deposited on glass substrates withoutheating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the targetcurrent increased from 200 to 1150mA with Ar pressure increasing. X-ray diffrac-tion, scanning electron microscopy and atomic force microscopy were used to observethe structural characterization of the films. The resistivity of the films was measuredusing four-point probe technique. At all the Ar pressures, the Cu films have mixturecrystalline orientations of [111], [200] and [220] in the direction of the film growth.The film deposited at lower pressure shows more [111] orientation while that depositedat higher pressure has more [220] orientation. The amount of larger grains in the filmprepared at 0.5Pa Ar pressure is slightly less than that prepared at 1. 0Pa and 1.5PaAr pressures. The resistivities of the films prepared at three different Ar pressures rep-resent few differences, about 3-4 times of that of bulk material. Besides the depositionrate increases with Ar pressure because of the increase in target current. The contri-bution of the bombardment of energetic reflected Argon atoms to these phenomena isdiscussed.
基金This project was financially supported by the Natural Science Foundation of Hebei Province, China. (No. F2005000073).
文摘Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperature by r.f. magnetron sputtering. ITO films were deposited on glass and silicon substrate. Electrical, optical, structural and morphological properties of the ITO films were investigated in terms of the preparation conditions. The annealing treatment has improved the properties of the ITO films at different degree. The maximum transmittance of the obtained ITO films in the visible range is over 92%, and the low resistivity for the ITO films are about 3.85×10-4 Ω·cm at 80 ℃, 80 W after annealing.
基金supported by the Chinese Academy of Sciences within“The Hundred Talent Project"by the Bureau for Sciences and Technology of Guangzhou City within the"Nanoproject"
文摘Ni-Cr System solar selective thin solid films were prepared by d.c. magnetron reactive sputtering under the atmosphere of O2 and N2. Ni-Cr alloy was chosen as target material and copper sheets as substrate. Using SEAL Spectrophotometer and Talystep to analyze the relations between the selective characteristic and the structure, the formation and the thickness of the thin films. The aim is to obtain good solar selective thin films with high absorptance and low emittance, which is applied to flat plate solar heat collectors.
文摘Columnar nanocrystalline aluminum nitride(cnc-AlN) thin films with(002) orientation and uniform texture have been deposited successfully on large silicon wafers by RF reactive magnetron sputtering.At the optimum sputtering parameters, the deposited cnc-AlN thin films show a c-axis preferred orientation with a crystallite size of about 28 nm and surface roughness(RMS) of about 1.29 nm. The cnc-AlN thin films were well transparent with an optical band gap about 4.8 e V, and the residual compressive stress and the defect density in the film have been revealed by Ramon spectroscopy. Moreover, piezoelectric performances of the cnc-AlN thin films executed effectively in a film bulk acoustic resonator structure.
基金supported by the National Key R&D Program of China(Nos.2016YFA0401304 and 2017YFA0403302)the National Natural Science Foundation of China(NSFC)(Nos.61621001,11505129,and U1732268)
文摘Gold films deposited by direct current magnetron sputtering are used for synchrotron radiation optics. In this study, the microstructure and surface roughness of gold films were investigated for the purpose of developing high-reflectivity mirrors. The deposition process was first optimized. Films were fabricated at different sputtering powers (15, 40, 80, and 120 W) and characterized using grazing incidence X-ray reflectometry, X-ray diffraction, and atomic force microscopy. The results showed that all the films were highly textured, having a dominant Au (111) orientation, and the film deposited at 80 W had the lowest surface roughness. Subsequently, post-deposition annealing from 100 to 200℃ in a vacuum was performed on the films deposited at 80 W to investigate the effect of annealing on the microstructure and surface roughness of the films. The grain size, surface roughness, and their relationship were investigated as a function of annealing temperature. AFM and XRD results revealed that at annealing temperatures of 175 ℃ and below, microstructural change of the films was mainly manifested by the elimination of voids. At annealing temperatures higher than 175℃, grain coalescence occurred in addition to the void elimination, causing the surface roughness to increase.
基金supported by "University Innovation and Research Training Program (China)" (No. 2009003)the Natural Science Foundation of Jiangsu Province (No.BK2011252)the Industry Science and Technology Supported Plan of Changzhou (No. CE20110012)
文摘Pseudobinary Ti 1 x Al x N films were synthesized on Si (100) wafer by DC magnetron sputtering method using Ti 1 x Al x alloy targets with different Al contents. The composition of the Ti 1 x Al x N films was determined by electron probe microanalysis (EPMA). Structural characteristic was performed by X-ray diffraction (XRD), transmission electron microscopy (TEM), and high-resolution TEM (HRTEM). First principles virtual crystal calculations for the Ti 1 x Al x N disordered alloys were used for the XRD simulations. The crystalline structure of the Ti 0.61 Al 0.39 N film was found to be a metastable single phase with NaCl (B1) structure. Its lattice constant, determined by XRD, was less than that of pure TiN. With the increase of Al content, the lattice constant of B1 phase was continually decreased, while würtzite (B4) structure was observed in the Ti 0.40 Al 0.60 N film. When x reached 0.75, the B1 phase disappeared, and only B4 phase was remained. The critical Al content for the phase transition from NaCl to würtzite structure in this paper was about 0.60, which could be explained by both the thermodynamic model and the electron theory. As-deposited Ti 1 x Al x N films exhibited excellent mechanical properties. Hardness measurements of Ti 1 x Al x N films showed a high value of 45GPa for x=0.39 and was decreased to value of 27 GPa with increasing Al at x=0.60.
基金financially supported by the Fundamental Research Funds for the Central Universities (No.DUT10JN08)the Natural Science Foundation of Jiangsu Province (No. BK2011252)the Industry Science and Technology Supported Plan of Changzhou (No. CE20110012)
文摘Ternary AlMgB thin films were synthesized on silicon (100) substrate at 573 K by radio frequency (RF) magnetron sputtering method using one Al/Mg co-target and one boron target. The thickness of the as-deposited thin film was controlled to 500 nm by adjusting deposition time. The influences of sputtering powers on the elemental contents and structural and mechanical properties were investigated by electron probe microanalysis (EPMA), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HR-TEM), and nanoindentation system. At the same time, the ball-on-disk tribometer was used to measure the friction behavior of the films. Experimental results indicate that the as-deposited boron-rich films are primarily amorphous structure and possess a dramatic high hardness up to 39 GPa with 99.03 at.% boron. Obviously, it has exceeded the hardness value of 32 GPa of pure AlMgB 14 bulk material prepared by sintering method. Furthermore, the friction coefficients of the thin films exhibit an average value as low as 0.3, which is considered as the effect of self-lubricating.
文摘Tc, Jc and Rs properties of large area double sided YBCO thin films deposited on LaAlO3 substrates by direct current sputtering were reported.Film thickness of the obtained thin films is over 300 nm, Tc ＞ 90 K; Rs can be as low as less than 1.0 mΩ(77 K, 10 GHz).Homogenousity of the properties around the plane was studied.Under the measnous distributions.Influences of substrate temperature and Ar and O2 pressures on properties of the double-sided thin films were discussed.
文摘The distribution of plasma density in the vicinity of the W Mo alloy source in the process of double glow discharge plasma surface alloying was diagnosed using the moveable Langmuir probe. The sputtering law, surface composition and morphological variation of the W Mo alloy source was studied. The experimental results show that there exists obvious preferential sputtering on the surface of the W Mo alloy source under the argon ion bombardment; the stable period is reached after a transitional period, and the preferential sputtering occurs in a definite range of composition(mole fraction): 70%～75% Mo, 22%～25% W; there appears segregation on the surface of the W Mo alloy source.
基金supported by the National Key R&D Program of China(No.2018YFE0203400)the Science and Technology plan project of Shenzhen(JCYJ20190808120001755)+1 种基金the National Natural Science Foundation of China(No.62074102)the Key Project of Department of Education of Guangdong Province(No.2018KZDXM059)China。
文摘In recent years,Cu_(2)ZnSnS_(4)(CZTS)semiconductor materials have received intensive attention in the field of thin-film solar cells owing to its non-toxic and low-cost elements.In this work,double-pressure sputtering technology is applied to obtain highly efficient and ultra-thin(-450 nm)pure Cu_(2)ZnSnS_(4)(CZTS)solar cell.Using mixed materials with sulfides and copper powder as a quaternary target via spark plasma sintering(SPS)method and adopting double-layer sputtering(high+low pressure),a highly adhesive and large-grained CZTS thin film is achieved.As a result,the damage to the surface of Mo contact is decreased so that the reflectivity of incident light can be improved.Moreover,the composition of CZTS film was more uniform and the secondary phase separation at the Mo interface was reduced.Therefore,the interface defect state and deep level defect density in corresponding device with double-pressure is reduced and the ratio of depletion thickness to absorption layer thickness can reached to 0.58,which promoted the collection of photogenerated carriers.Finally,an efficiency of 9.3%for ultra-thin(~450 nm)CZTS film solar cell is obtained.
基金supported by the National Natural Science Foundation of China(51704269 and 51573173)Fundamental Research Funds for the Central Universities(WK2320000037)。
文摘To date,lithium-ion batteries are becoming increasingly significant in the application of portable devices and electrical vehicles,and revolutionary progress in theoretical research and industrial application has been achieved.However,the commercial polyolefin separators with unsatisfying electrolytes affinity and poor thermal stability have extremely restricted the further application of lithium-ion batteries,especially in the high-temperature fields.In this work,magnetron sputtering deposition technique is employed to modify the commercial polyimide separator by coating silicon nitride on both sides.Magnetron sputtering deposition modified polyimide(MSD-PI)composite separator shows high thermal stability and ionic conductivity.More importantly,compared with the cells using Celgard separator,the cells with MSD-PI separator exhibit superior electrochemical performance,especially long-term cycle performance under high temperature environment,owing to the high thermal conductivity of surface Si3 N4 particles.Hence,lithium-ion batteries with MSD-PI separator are capable of improving thermal safety and capacity retention,which demonstrates that magnetron sputtering deposition technique could be regarded as a promising strategy to develop advanced organic/inorganic composite separators for high-temperature lithium-ion batteries.
