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Electron localization in ultrathin films of three-dimensional topological insulators
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作者 廖剑 史刚 +1 位作者 刘楠 李永庆 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第11期19-25,共7页
The recent discovery of three-dimensional(3D) topological insulators(TIs) has provided a fertile ground for obtaining further insights into electron localization in condensed matter systems.In the past few years,a... The recent discovery of three-dimensional(3D) topological insulators(TIs) has provided a fertile ground for obtaining further insights into electron localization in condensed matter systems.In the past few years,a tremendous amount of research effort has been devoted to investigate electron transport properties of 3D TIs and their low dimensional structures in a wide range of disorder strength,covering transport regimes from weak antilocalization to strong localization.The knowledge gained from these studies not only offers sensitive means to probe the surface states of 3D TIs but also forms a basis for exploring novel topological phases.In this article,we briefly review the main experimental progress in the study of the localization in 3D TIs,with a focus on the latest results on ultrathin TI films.Some new transport data will also be presented in order to complement those reported previously in the literature. 展开更多
关键词 topological localization devoted covering complement Electron briefly tremendous crossover coherent
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A REGULAR VALUE OF COMPACT DEFORMATION
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作者 J.M.Soriano 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI 2006年第9期1265-1274,共10页
Sufficient conditions were given to assert that between any two Banach spaces over K, Fredholm mappings share at least one .value in a specific open ball. The proof of the result is constructive and based upon continu... Sufficient conditions were given to assert that between any two Banach spaces over K, Fredholm mappings share at least one .value in a specific open ball. The proof of the result is constructive and based upon continuation methods. 展开更多
关键词 regular value continuation methods continuous dependence theorem C^1- homotopy proper mapping compact mapping Fredholm mapping topological complement Sard-Smale theorem
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Homology Groups of Simplicial Complements
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作者 Jun MA Feifei FAN Xiangjun WANG 《Chinese Annals of Mathematics,Series B》 SCIE CSCD 2016年第5期683-690,共8页
This paper deals with homology groups induced by the exterior algebra generated by the simplicial compliment of a simplicial complex K. By using ech homology and Alexander duality, the authors prove that there is a du... This paper deals with homology groups induced by the exterior algebra generated by the simplicial compliment of a simplicial complex K. By using ech homology and Alexander duality, the authors prove that there is a duality between these homology groups and the simplicial homology groups of K. 展开更多
关键词 homology duality algebra simplex proof topological exterior integer inflation complement
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