This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output p...This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.展开更多
A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both the temperature-independent contributions and the temperature-dependent ones of acoustic branches and optical bra...A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both the temperature-independent contributions and the temperature-dependent ones of acoustic branches and optical branches have been derived. It is found that the temperature-independent contributions are very important, especially at low temperature. The total pressure-induced shift (PS) of a level (or spectral line or band) is the algebraic sum of its PS without EPI and its PS due to EPI. By means of both the theory for shifts of energy spectra due to EPI and the theory for PS of energy spectra, the total PS of R<SUB>1</SUB> line of tunable laser crystal GSGG:Cr<SUP>3+</SUP> at 70 K as well as the ones of its R<SUB>1</SUB> line, R<SUB>2</SUB> line and U band at 300 K will be successfully calculated and explained in this series of papers.展开更多
The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,th...The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,there are a few different points.An SOA in front of the tunable laser should be polarization dependent and has low optical confinement factor.To obtain wide gain bandwidth at the threshold current,the gain chip used in the tunable laser cavity should be something between SOA and fixed-wavelength laser design,while the fixed-wavelength laser has high optical confinement factor.Detailed discussion is given with basic equations and some simulation results on saturation power of the SOA and gain bandwidth of gain chip are shown.展开更多
We propose and demonstrate a simple approach to lower the thermal quenching effect and improve the output power of Cr：LiSAF lasers, which is accomplished by employing two laser rods. The resonator contains two laser ...We propose and demonstrate a simple approach to lower the thermal quenching effect and improve the output power of Cr：LiSAF lasers, which is accomplished by employing two laser rods. The resonator contains two laser rods and is designed by using two ＂X＂ folding cavities in cascade. A tunable laser output of ～ 180 mW has been achieved with the pump of single-striped laser diodes. Compared with lasers using single gain rod, the laser with dual rods shows less severe thermal effect and increases the output by more than two times.展开更多
By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI o...By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI of R<SUB>1</SUB> line, R<SUB>2</SUB> line, and U band of GSGG:Cr<SUP>3+</SUP> at 300 K have been calculated, respectively. The calculated results are in good agreement with all the experimental data. Their physical origins have also been explained. It is found that the mixing-degree of and base-wavefunctions in the wavefunctions of R<SUB>1</SUB> level of GSGG:Cr<SUP>3+</SUP> at 300 K is remarkable under normal pressure, and the mixing-degree rapidly decreases with increasing pressure. The change of the mixing-degree with pressure plays a key role not only for the 'pure electronic' PS of R<SUB>1</SUB> line and R<SUB>2</SUB> line but also the PS of R<SUB>1</SUB> line and R<SUB>2</SUB> line due to EPI. The pressure-dependent behaviors of the 'pure electronic' PS of R<SUB>1</SUB> line (or R<SUB>2</SUB> line) and the PS of R<SUB>1</SUB> line (or R<SUB>2</SUB> line) due to EPI are quite different. It is the combined effect of them that gives rise to the total PS of R<SUB>1</SUB> line (or R<SUB>2</SUB> line). In the range of about 15 kbar ~ 45 kbar, the mergence and/or order-reversal between levels and levels take place, which cause the fluctuation of the rate of PS for with pressure. At 300 K, both the temperature-dependent contribution to R<SUB>1</SUB> line (or R<SUB>2</SUB> line or U band) from EPI and the temperature-independent one are important.展开更多
With the strong-field scheme and trigonal bases, the complete d<SUP>3</SUP> energy matrix in a trigonally distorted cubic-field has been constructed. By diagonalizing this matrix, the normal-pressure energ...With the strong-field scheme and trigonal bases, the complete d<SUP>3</SUP> energy matrix in a trigonally distorted cubic-field has been constructed. By diagonalizing this matrix, the normal-pressure energy spectra and wavefunctions of GSGG:Cr<SUP>3+</SUP> at 70 K and 300 K have been calculated without the electron-phonon interaction (EPI), respectively. Further, the contributions to energy spectra from EPI at two temperatures have also been calculated, where temperature-independent terms of EPI are found to be dominant. The sum of aforementioned two parts gives rise to the total energy spectrum. The calculated results are in good agreement with all the optical-spectral experimental data and the experimental results of and . It is found that the contribution from EPI to R<SUB>1</SUB> line of GSGG:Cr<SUP>3+</SUP> with taking into account spin-orbit interaction (H<SUB>so</SUB>) and trigonal field (V<SUB>trig</SUB>) is much larger than the one with neglecting H<SUB>so</SUB> and V<SUB>trig</SUB>, and accordingly it is essential for the calculation of the EPI effect to take first into account H<SUB>so</SUB> and V<SUB>trig</SUB>. The admixture of base-wavefunctions,and , the average energy separation and their variations with temperature have been calculated and discussed.展开更多
By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI o...By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI of R<SUB>1</SUB> line of GSGG:Cr<SUP>3+</SUP> at 70 K have been calculated, respectively. Their physical origins have been revealed. It is found that the admixture of and base-wavefunctions in the wavefunctions of R<SUB>1</SUB> level of GSGG:Cr<SUP>3+</SUP> at 70 K is remarkable under the normal pressure, and the degree of the admixture rapidly decreases with increasing pressure. The change of the degree of the admixture with the pressure plays a key role for not only the pure electronic PS of R<SUB>1</SUB> line but also the PS of R<SUB>1</SUB> line due to EPI. The detailed calculations and analyses show that the pressure-dependent behaviors of the pure electronic PS of R<SUB>1</SUB> line and the PS of R<SUB>1</SUB> line due to EPI are quite different. It is the combined effect of them that gives rise to the total PS of R<SUB>1</SUB> line, which has satisfactorily explained the experimental data (including a reversal of PS of R<SUB>1</SUB> line). In contributions to PS of R<SUB>1</SUB> line due to EPI at 70 K, the temperature-independent contribution is much larger than the temperature-dependent contribution. The former results from the interaction between the zero-point vibration of the lattice and localized electronic state.展开更多
We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a sin...We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.展开更多
The tunable BIG RW distributed Bragg reflector lasers with two different coupling coefficient gratings are proposed and fabricated.The threshold current of the laser is 38mA and the output power is more than 8mW.The ...The tunable BIG RW distributed Bragg reflector lasers with two different coupling coefficient gratings are proposed and fabricated.The threshold current of the laser is 38mA and the output power is more than 8mW.The tunable range of the laser is 3 2nm and the side mode suppression ratio is more than 30dB.The variation of the output power within the tunable wavelength range is less than 0 3dB.展开更多
A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot （QD） gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of...A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot （QD） gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm^2only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current densitycan be reduced remarkably compared with the free-running QD gain device.展开更多
We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti：sapphire laser. A β-BaB2O4 walk-of...We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti：sapphire laser. A β-BaB2O4 walk-off compensation configuration and a KBe2BO3F2 prism-coupled device are adopted for the generation of second harmonic and fourth harmonics, respectively. The highest power is 3.72 mW at 193 nm, and the fluctuation at 2.85 mW in 130 rain is less than ±2%.展开更多
We experimentally demonstrate a channel-reuse bidirectional 10 Gb∕s∕λ long-reach dense wavelength-division multiplexing passive optical network（DWDM-PON） and an optical beat-noise-based automatic wavelength contr...We experimentally demonstrate a channel-reuse bidirectional 10 Gb∕s∕λ long-reach dense wavelength-division multiplexing passive optical network（DWDM-PON） and an optical beat-noise-based automatic wavelength control method for a tunable laser used in a colorless optical network unit（where λ · wavelength）. A55 km, bidirectional, 400 Gb/s（40 × 10 Gb∕s） capacity channel-reuse transmission with 100 GHz channel spacing is achieved. The transmission performance is also measured with different optical signal to Rayleigh backscattering noise ratios and different central wavelength shifts between upstream and downstream in the channel-reuse system.展开更多
A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The ...A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The proposed scheme makes use of the frequency modulation spectroscopy by modulating sidebands of a fiber electro-optic modulator output. The short-term performances of a frequency offset locked semiconductor laser are experimentally demonstrated with the Allan variance of around 3.9 × 10-11 at a 2 s integration time. This method may have many applications, such as in Raman optics for an atom interferometer.展开更多
This paper introduces a tunable external-cavity diode laser using a MEMS vertical mirror fabricated on a silicon-on-insulator (SOI) wafer. This laser has the merits of simple alignment process, easy integration/packag...This paper introduces a tunable external-cavity diode laser using a MEMS vertical mirror fabricated on a silicon-on-insulator (SOI) wafer. This laser has the merits of simple alignment process, easy integration/packaging, and potentially large wavelength tuning range.展开更多
A corner-pumped Nd：YAG/YAG composite slab continuous-wave laser operating at 1064 nm,1074 nm,1112 nm,1116 nm,and 1123 nm simultaneously and a laser that is tunable at these wavelengths are reported for the first time...A corner-pumped Nd：YAG/YAG composite slab continuous-wave laser operating at 1064 nm,1074 nm,1112 nm,1116 nm,and 1123 nm simultaneously and a laser that is tunable at these wavelengths are reported for the first time.The maximum output power of the five-wavelength laser is 5.66 W with an optical-to-optical conversion efficiency of 11.3%.After a birefringent filter is inserted in the cavity,the five wavelengths can be separated successfully by rotating the filter.The maximum output powers of the 1064 nm,1074 nm,1112 nm,1116 nm,and 1123 nm lasers are 1.51 W,1.3 W,1.27 W,0.86 W,and 0.72 W,respectively.展开更多
This article covers laser configurations, design and experiments of photonic microelectromechanical systems （MEMS） tunable laser sources. Three different types of MEMS tunable lasers such as MEMS coupled-cavity lase...This article covers laser configurations, design and experiments of photonic microelectromechanical systems （MEMS） tunable laser sources. Three different types of MEMS tunable lasers such as MEMS coupled-cavity lasers, injection-locked laser systems and dual-wavelength tunable lasers are demonstrated as examples of natural synergy of MEMS with photonics. The expansion and penetration of the MEMS technology to silicon optoelectronic creates on-chip optical systems at an unprecedented scale of integration. While producing better integration with robustness and compactness, MEMS improves the functionalities and specifications of laser chips. Additionally, MEMS tunable lasers are featured with small size, high tuning speed, wide tuning range and CMOS compatible integration, which broaden their applications to many fields.展开更多
An in-band optical signal-to-noise ratio （OSNR） monitoring technique with high resolution and large measurement range is demonstrated based on low- bandwidth coherent receiver and a tunable laser. The measurement ra...An in-band optical signal-to-noise ratio （OSNR） monitoring technique with high resolution and large measurement range is demonstrated based on low- bandwidth coherent receiver and a tunable laser. The measurement range of OSNR is from 10 to 25 dB and the resolution can be controlled about ±1 dB.展开更多
A novel Nd, La：SrF_2 disordered crystal is prepared, and its continuous-wave wavelength tuning operation is performed for the first time. Employing a surface plasmon resonance（SPR） based gold nanobipyramids（G-NBPs...A novel Nd, La：SrF_2 disordered crystal is prepared, and its continuous-wave wavelength tuning operation is performed for the first time. Employing a surface plasmon resonance（SPR） based gold nanobipyramids（G-NBPs） saturable absorber,we obtain a compact diode-pumped passively Q-switched Nd, La：SrF_2 laser. The stable Q-switched pulse operates with the shortest pulse duration of 1.15 μs and the maximum repetition rate of 41 k Hz. The corresponding single pulse energy is 2.24 μJ. The results indicate that G-NBPs could be a promising saturable absorber applied to the diode-pumped solid state lasers（DPSSLs）.展开更多
Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater o...Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is fabricated.The photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.展开更多
基金the National Natural Science Foundation of China(Nos.90401025,60736036,60706009,60777021)the State Key Development Program for Basic Research of China(Nos.2006CB604901,2006CB604902)the National High Technology Research and Development Program of China(Nos.2006AA01Z256,2007AA03Z419,2007AA03Z417)~~
文摘This paper presents an SG-DBR with a monolithically integrated SOA fabricated using quantum-well intermixing （QWI） for the first time in China's Mainland. The wavelength tuning range covers 33nm and the output power reaches 10mW with an SOA current of 50mA. The device can work at available channels with SMSR over 35dB.
文摘A theory for shifts of energy spectra due to electron-phonon interaction (EPI) has been developed. Both the temperature-independent contributions and the temperature-dependent ones of acoustic branches and optical branches have been derived. It is found that the temperature-independent contributions are very important, especially at low temperature. The total pressure-induced shift (PS) of a level (or spectral line or band) is the algebraic sum of its PS without EPI and its PS due to EPI. By means of both the theory for shifts of energy spectra due to EPI and the theory for PS of energy spectra, the total PS of R<SUB>1</SUB> line of tunable laser crystal GSGG:Cr<SUP>3+</SUP> at 70 K as well as the ones of its R<SUB>1</SUB> line, R<SUB>2</SUB> line and U band at 300 K will be successfully calculated and explained in this series of papers.
文摘The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,there are a few different points.An SOA in front of the tunable laser should be polarization dependent and has low optical confinement factor.To obtain wide gain bandwidth at the threshold current,the gain chip used in the tunable laser cavity should be something between SOA and fixed-wavelength laser design,while the fixed-wavelength laser has high optical confinement factor.Detailed discussion is given with basic equations and some simulation results on saturation power of the SOA and gain bandwidth of gain chip are shown.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10376009 and 60538010） and the program of Shanghai 0ptical Science and Technology, China （Grant No 012261065）.
文摘We propose and demonstrate a simple approach to lower the thermal quenching effect and improve the output power of Cr：LiSAF lasers, which is accomplished by employing two laser rods. The resonator contains two laser rods and is designed by using two ＂X＂ folding cavities in cascade. A tunable laser output of ～ 180 mW has been achieved with the pump of single-striped laser diodes. Compared with lasers using single gain rod, the laser with dual rods shows less severe thermal effect and increases the output by more than two times.
文摘By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI of R<SUB>1</SUB> line, R<SUB>2</SUB> line, and U band of GSGG:Cr<SUP>3+</SUP> at 300 K have been calculated, respectively. The calculated results are in good agreement with all the experimental data. Their physical origins have also been explained. It is found that the mixing-degree of and base-wavefunctions in the wavefunctions of R<SUB>1</SUB> level of GSGG:Cr<SUP>3+</SUP> at 300 K is remarkable under normal pressure, and the mixing-degree rapidly decreases with increasing pressure. The change of the mixing-degree with pressure plays a key role not only for the 'pure electronic' PS of R<SUB>1</SUB> line and R<SUB>2</SUB> line but also the PS of R<SUB>1</SUB> line and R<SUB>2</SUB> line due to EPI. The pressure-dependent behaviors of the 'pure electronic' PS of R<SUB>1</SUB> line (or R<SUB>2</SUB> line) and the PS of R<SUB>1</SUB> line (or R<SUB>2</SUB> line) due to EPI are quite different. It is the combined effect of them that gives rise to the total PS of R<SUB>1</SUB> line (or R<SUB>2</SUB> line). In the range of about 15 kbar ~ 45 kbar, the mergence and/or order-reversal between levels and levels take place, which cause the fluctuation of the rate of PS for with pressure. At 300 K, both the temperature-dependent contribution to R<SUB>1</SUB> line (or R<SUB>2</SUB> line or U band) from EPI and the temperature-independent one are important.
文摘With the strong-field scheme and trigonal bases, the complete d<SUP>3</SUP> energy matrix in a trigonally distorted cubic-field has been constructed. By diagonalizing this matrix, the normal-pressure energy spectra and wavefunctions of GSGG:Cr<SUP>3+</SUP> at 70 K and 300 K have been calculated without the electron-phonon interaction (EPI), respectively. Further, the contributions to energy spectra from EPI at two temperatures have also been calculated, where temperature-independent terms of EPI are found to be dominant. The sum of aforementioned two parts gives rise to the total energy spectrum. The calculated results are in good agreement with all the optical-spectral experimental data and the experimental results of and . It is found that the contribution from EPI to R<SUB>1</SUB> line of GSGG:Cr<SUP>3+</SUP> with taking into account spin-orbit interaction (H<SUB>so</SUB>) and trigonal field (V<SUB>trig</SUB>) is much larger than the one with neglecting H<SUB>so</SUB> and V<SUB>trig</SUB>, and accordingly it is essential for the calculation of the EPI effect to take first into account H<SUB>so</SUB> and V<SUB>trig</SUB>. The admixture of base-wavefunctions,and , the average energy separation and their variations with temperature have been calculated and discussed.
文摘By means of both a theory for pressure-induced shifts (PS) of energy spectra and a theory for shifts of energy spectra due to electron-phonon interaction (EPI), the 'pure electronic' PS and the PS due to EPI of R<SUB>1</SUB> line of GSGG:Cr<SUP>3+</SUP> at 70 K have been calculated, respectively. Their physical origins have been revealed. It is found that the admixture of and base-wavefunctions in the wavefunctions of R<SUB>1</SUB> level of GSGG:Cr<SUP>3+</SUP> at 70 K is remarkable under the normal pressure, and the degree of the admixture rapidly decreases with increasing pressure. The change of the degree of the admixture with the pressure plays a key role for not only the pure electronic PS of R<SUB>1</SUB> line but also the PS of R<SUB>1</SUB> line due to EPI. The detailed calculations and analyses show that the pressure-dependent behaviors of the pure electronic PS of R<SUB>1</SUB> line and the PS of R<SUB>1</SUB> line due to EPI are quite different. It is the combined effect of them that gives rise to the total PS of R<SUB>1</SUB> line, which has satisfactorily explained the experimental data (including a reversal of PS of R<SUB>1</SUB> line). In contributions to PS of R<SUB>1</SUB> line due to EPI at 70 K, the temperature-independent contribution is much larger than the temperature-dependent contribution. The former results from the interaction between the zero-point vibration of the lattice and localized electronic state.
文摘We report a wavelength tunable electro-absorption modulated DBR laser based on a combined method of SAG and QWI. The threshold current is 37mA and the output power at 100mA gain current is 3.5mW. When coupled to a single-mode fiber with a coupling efficiency of 15% ,more than a 20dB extinction ratio is observed over the change of EAM bias from 0 to -2V. The 4.4nm continuous wavelength tuning range covers 6 channels on a 100GHz grid for WDM telecommunications.
文摘The tunable BIG RW distributed Bragg reflector lasers with two different coupling coefficient gratings are proposed and fabricated.The threshold current of the laser is 38mA and the output power is more than 8mW.The tunable range of the laser is 3 2nm and the side mode suppression ratio is more than 30dB.The variation of the output power within the tunable wavelength range is less than 0 3dB.
基金Project supported by the National Basic Research Program of China (Grant No. 2006CB604904)the National Natural Science Foundation of China (Grant Nos. 60976057, 60876086 and 60776037)
文摘A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot （QD） gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm^2only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current densitycan be reduced remarkably compared with the free-running QD gain device.
基金supported by the State Key Program for Basic Research of China (Grant No. 2010CB630706)National High Technology Research and Development Program of Chinathe National Natural Science Foundation of China (Grant No. 61138004)
文摘We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti：sapphire laser. A β-BaB2O4 walk-off compensation configuration and a KBe2BO3F2 prism-coupled device are adopted for the generation of second harmonic and fourth harmonics, respectively. The highest power is 3.72 mW at 193 nm, and the fluctuation at 2.85 mW in 130 rain is less than ±2%.
基金supported by National Natural Science Foundation of China(No.61302079)the National "863" Program of China(No.2011AA01A104)the Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),China
文摘We experimentally demonstrate a channel-reuse bidirectional 10 Gb∕s∕λ long-reach dense wavelength-division multiplexing passive optical network（DWDM-PON） and an optical beat-noise-based automatic wavelength control method for a tunable laser used in a colorless optical network unit（where λ · wavelength）. A55 km, bidirectional, 400 Gb/s（40 × 10 Gb∕s） capacity channel-reuse transmission with 100 GHz channel spacing is achieved. The transmission performance is also measured with different optical signal to Rayleigh backscattering noise ratios and different central wavelength shifts between upstream and downstream in the channel-reuse system.
基金supported by the National Natural Science Foundation of China(No.61473166)
文摘A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The proposed scheme makes use of the frequency modulation spectroscopy by modulating sidebands of a fiber electro-optic modulator output. The short-term performances of a frequency offset locked semiconductor laser are experimentally demonstrated with the Allan variance of around 3.9 × 10-11 at a 2 s integration time. This method may have many applications, such as in Raman optics for an atom interferometer.
文摘This paper introduces a tunable external-cavity diode laser using a MEMS vertical mirror fabricated on a silicon-on-insulator (SOI) wafer. This laser has the merits of simple alignment process, easy integration/packaging, and potentially large wavelength tuning range.
基金Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20110002120054)the National High Technology Research and Development Program of China (Grant No. 2011AA030208)
文摘A corner-pumped Nd：YAG/YAG composite slab continuous-wave laser operating at 1064 nm,1074 nm,1112 nm,1116 nm,and 1123 nm simultaneously and a laser that is tunable at these wavelengths are reported for the first time.The maximum output power of the five-wavelength laser is 5.66 W with an optical-to-optical conversion efficiency of 11.3%.After a birefringent filter is inserted in the cavity,the five wavelengths can be separated successfully by rotating the filter.The maximum output powers of the 1064 nm,1074 nm,1112 nm,1116 nm,and 1123 nm lasers are 1.51 W,1.3 W,1.27 W,0.86 W,and 0.72 W,respectively.
文摘This article covers laser configurations, design and experiments of photonic microelectromechanical systems （MEMS） tunable laser sources. Three different types of MEMS tunable lasers such as MEMS coupled-cavity lasers, injection-locked laser systems and dual-wavelength tunable lasers are demonstrated as examples of natural synergy of MEMS with photonics. The expansion and penetration of the MEMS technology to silicon optoelectronic creates on-chip optical systems at an unprecedented scale of integration. While producing better integration with robustness and compactness, MEMS improves the functionalities and specifications of laser chips. Additionally, MEMS tunable lasers are featured with small size, high tuning speed, wide tuning range and CMOS compatible integration, which broaden their applications to many fields.
基金Acknowledgements The authors would like to acknowledge the support of the National Natural Science Foundation of China （NSFC） （Grant No. 61435006） and the Program for New Century Excellent Talents in University （NCET-12-0679） in China.
文摘An in-band optical signal-to-noise ratio （OSNR） monitoring technique with high resolution and large measurement range is demonstrated based on low- bandwidth coherent receiver and a tunable laser. The measurement range of OSNR is from 10 to 25 dB and the resolution can be controlled about ±1 dB.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61475089,51432007,and 61422511)
文摘A novel Nd, La：SrF_2 disordered crystal is prepared, and its continuous-wave wavelength tuning operation is performed for the first time. Employing a surface plasmon resonance（SPR） based gold nanobipyramids（G-NBPs） saturable absorber,we obtain a compact diode-pumped passively Q-switched Nd, La：SrF_2 laser. The stable Q-switched pulse operates with the shortest pulse duration of 1.15 μs and the maximum repetition rate of 41 k Hz. The corresponding single pulse energy is 2.24 μJ. The results indicate that G-NBPs could be a promising saturable absorber applied to the diode-pumped solid state lasers（DPSSLs）.
基金the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20210593)the Foundation of Jiangsu Provincial Double Innovation Doctor Program (Grant No. 30644)+2 种基金the National Natural Science Foundation of China (Grant No. 62204127)State Key Laboratory of Luminescence and Applications (Grant No. SKLA 202104)open research fund of Key Lab of Broadband Wireless Communication and Sensor Network Technology (Nanjing University of Posts and Telecommunications, Ministry of Education)。
文摘Dynamically tunable laser sources are highly promising for realizing visionary concepts of integrated photonic circuits and other applications. In this paper, a Ga N-based laser with an integrated PN junction heater on Si is fabricated.The photoluminescence properties of the Ga N beam cavity are controlled by temperature, and the Joule heater provides electrically driven regulation of temperature. These two features of the cavity make it possible to realize convenient tuning of the lasing properties. The multi-functional Ga N beam cavity achieves optically pumped lasing with a single mode near 362.4 nm with a high Q-factor of 1394. The temperature of this device increases by 0–5℃ under the Joule heating effect. Then, electrical control of the lasing mode is demonstrated. The lasing resonant peak shows a continuous redshift of about 0.5 nm and the device also exhibits dynamic switching of its lasing mode. The lasing modulation can be ascribed to temperature-induced reduction of the bandgap. Our work may be of benefit for external optical modulation in future chip-based optoelectronic devices.
