Polymer-derived ceramic(PDC) thin films are promising wear-resistant coatings for protecting metals and carbon-carbon composites from corrosion and oxidation.However,the high pyrolysis temperature hinders the applicat...Polymer-derived ceramic(PDC) thin films are promising wear-resistant coatings for protecting metals and carbon-carbon composites from corrosion and oxidation.However,the high pyrolysis temperature hinders the applications on substrate materials with low melting points.We report a new synthesis route for PDC coatings using initiated chemical vapor deposited poly(1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane)(pV_3D_3) as the precurs or.We investigated the changes in siloxane moieties and the network topology,and proposed a three-stage mechanism for the thermal annealing process.The rise of the connectivity number for the structures obtained at increased annealing temperatures was found with strong correlation to the enhanced mechanical properties and thermal conductivity.Our PDC films obtained via annealing at 850℃ exhibit at least 14.6% higher hardness than prior reports for PDCs synthesized below 1100℃.Furthermore,thermal conductivity up to 1.02 W(mK)^(-1) was achieved at the annealing temperature as low as 700℃,which is on the same order of magnitude as PDCs obtained above 1100℃.Using minimum thermal conductivity models,we found that the thermal transport is dominated by diffusons in the films below the percolation of rigidity,while ultra-short mean-free path phonons contribute to the thermal conductivity of the films above the percolation threshold.The findings of this work provide new insights for the development of wear-resistant and thermally conductive PDC thin films for durable protection coatings.展开更多
A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilat...A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations(TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.展开更多
Recent findings related to coagulable magnesium vapor nucleation and growth in vacuum were assessed critically, with emphasis on understanding these processes at a fundamental molecular level. The effects of magnesium...Recent findings related to coagulable magnesium vapor nucleation and growth in vacuum were assessed critically, with emphasis on understanding these processes at a fundamental molecular level. The effects of magnesium vapor pressure, condensation temperature, and condensation zone temperature gradient on magnesium vapor nucleation in phase transitions and condensation from atomic collision and coacervation with collision under vacuum conditions were discussed. Magnesium powder and magnesium lump condensates were produced under different conditions and characterized by scanning electron microscopy （SEM） and energy-dispersive X-ray spectroscopy （EDS）. The right condensation zone temperature approach to the liquid transition primarily improved the magnesium vapor concentration rate. The gas-solid phase transition was primarily inhibited by setting a small condenser temperature gradient. Under the right condensation temperature and temperature gradients, increasing magnesium vapor partial pressure improved crystallization and reduced the oxidation rate.展开更多
This study focuses on experiments of Au and Cu dissolved in vapor phase in hydrothermal fluids. Experiments prove that Au and Cu can re-distribute in vapor phase and liquid phase during separation of Au- and Cu-bearin...This study focuses on experiments of Au and Cu dissolved in vapor phase in hydrothermal fluids. Experiments prove that Au and Cu can re-distribute in vapor phase and liquid phase during separation of Au- and Cu-bearing supercritical fluids to vapor and liquid phases. These experimental results can illustrate some ore geneses, where boiling phenomena of ore fluids were found. Au- and Cubearing NaHCO3-HCl solutions were heated up to more than 350℃ in the main vessel, and then passed through a phase separator in a temperature range from 250℃ to 300℃, separated into vapor and liquid phases. We collected and analyzed the liquid and vapor samples separately, and found that Au and Cu dissolved and distributed in vapor phase. In some cases, the concentrations of Au and Cu in vapor are higher than those in liquid phase. Those experiments are used to interpret field observations of fluid inclusion data of some Au and Cu deposits, and demonstrate that some Au and Cu ore deposits are derived from metals transportation in vapor phase.展开更多
Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth o...Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga_2O_3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga_2O_3 substrates and for the fabrication of high power β-Ga_2O_3 devices.展开更多
Due to the remarkable growth rate compared to another growth methods for gallium nitride(GaN)growth,hydride vapor phase epitaxy(HVPE)is now the only method for mass product GaN substrates.In this review,commercial HVP...Due to the remarkable growth rate compared to another growth methods for gallium nitride(GaN)growth,hydride vapor phase epitaxy(HVPE)is now the only method for mass product GaN substrates.In this review,commercial HVPE systems and the GaN crystals grown by them are demonstrated.This article also illustrates some innovative attempts to develop homebuilt HVPE systems.Finally,the prospects for the further development of HVPE for GaN crystal growth in the future are also discussed.展开更多
Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based devices.The progresses in the growth of undoped,Si-dop...Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based devices.The progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this article.The growth technology and precursors of each type of doping are introduced.Besides,the influence of doping on the optical and electrical properties of GaN are presented in detail.Furthermore,the problems caused by doping,as well as the methods to solve them are also discussed.At last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.展开更多
Aluminum nitride(AlN)is the promising substrates material for the epitaxial growth ofⅢ-nitrides devices,such as high-power,high-frequency electronic,deep ultraviolet optoelectronics and acoustic devices.However,it is...Aluminum nitride(AlN)is the promising substrates material for the epitaxial growth ofⅢ-nitrides devices,such as high-power,high-frequency electronic,deep ultraviolet optoelectronics and acoustic devices.However,it is rather difficult to obtain the high quality and crack-free thick AlN wafers because of the low surface migration of Al adatoms and the large thermal and lattice mismatches between the foreign substrates and AlN.In this work,the fabrication of AlN material by hydride vapor phase epitaxy(HVPE)was summarized and discussed.At last,the outlook of the production of AlN by HVPE was prospected.展开更多
Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a hig...Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.展开更多
The gas phase process of diamond film deposition from CH4/H2 gas mixture by electron-assisted chemical vapor deposition is simulated by the Monte-Carlo method. The electron velocity distribution under different E/P (t...The gas phase process of diamond film deposition from CH4/H2 gas mixture by electron-assisted chemical vapor deposition is simulated by the Monte-Carlo method. The electron velocity distribution under different E/P (the ratio of the electric field to gas pressure) is obtained, and the velocity profile is asymmetric. The variation of the number density of CH3 and H with different CH4 concentrations and gas pressure is investigated, and the optimal experimental parameters are obtained: the gas pressure is in the range of 2.5 kPa - 15 kPa and the CH4 concentration is in the range of 0.5% - 1%. The energy carried by the fragment CH3 as the function of the experiment parameters is investigated to explain the diamond growth at low temperature. These results will be helpful to the selection of optimum experimental conditions for high quality diamond films deposition in EACVD and the modeling of plasma chemical vapor deposition.展开更多
Loop Heat Pipe (LHP) performance strongly depends on the performance of a wick that is porous media inserted in an evaporator. In this paper, the visualization results of thermo-fluid behavior on the surface of the wi...Loop Heat Pipe (LHP) performance strongly depends on the performance of a wick that is porous media inserted in an evaporator. In this paper, the visualization results of thermo-fluid behavior on the surface of the wick with microscopic infrared thermography were reported. In this study, 2 different samples that simulated a part of wick in the evaporator were used. The wicks were made by different two materials: polytetrafluoroethylene (PTFE) and stainless steel (SUS). The pore radii of PTFE wick and SUS wick are 1.2 μm and 22.5 μm. The difference of thermo-fluid behavior that was caused by the difference of material was investigated. These two materials include 4 different properties: pore radius, thermal conductivity, permeability and porosity. In order to investigate the effect of the thermal conductivity on wick’s operating mode, the phase diagram on the q-k<sub>eff</sub> plane was made. Based on the temperature line profiles, two operating modes: mode of heat conduction and mode of convection were observed. The effective thermal conductivity of the porous media has strong effect on the operating modes. In addition, the difference of heat leak through the wick that was caused by the difference of the material was discussed.展开更多
In this paper we investigated the optical properties of ZnO and Mn doped ZnO nanocrystals that were fabricated by a vapor phase transport growth process, using zinc acetate dihydrate with or without Mn in a constant O...In this paper we investigated the optical properties of ZnO and Mn doped ZnO nanocrystals that were fabricated by a vapor phase transport growth process, using zinc acetate dihydrate with or without Mn in a constant O2/Ar mixture gas flowing through the furnace at 400600℃, respectively. The as grown ZnO nanocrystals are homogeneous with a mean size of 19 nm observed by scanning electron microscope（SEM）. The optical characteristics were analyzed by absorption spectra and photoluminescence（PL） spectra at room-temperature. For ZnO nanocrystals, a strong and predominant UV emission peaked at 377 nm was found in the PL spectra. For Mn doped ZnO nanocrystals, in addition to the strong UV emission, a strong blue emission peaked at 435 nm was observed as well. By doping Mn ions, the major UV emission shifts from 377 nm to 408 nm, showing that Mn ions were not only incorporated into ZnO Ncs, but also introduced an impurity level in the bandgap. Moreover, with the concentration of Mn increasing, the relative intensities of the two emissions change largely, and the photoluminescence mechanism of them is discussed.展开更多
The mass transfer between non-aqueous phase liquid(NAPL) phase and soil gas phase in soil vapor extraction(SVE) process has been investigated by one-dimensional venting experiments. During quasi-steady volatilization ...The mass transfer between non-aqueous phase liquid(NAPL) phase and soil gas phase in soil vapor extraction(SVE) process has been investigated by one-dimensional venting experiments. During quasi-steady volatilization of three single-component NAPLs in a sandy soil, constant initial lumped mass transfer coefficient (λgN,0) canbe obtained if the relative saturation (ξ) between NAPL phase and gas phase is higher than a critical value (ξc), andthe lumped mass transfer coefficient decreases with ξ when ξ＜ξc. It is also shown that the lumped mass transfercoefficient can be increased by blending porous micro-particles into the sandy soil because of the increasing of theinterfacial area.展开更多
A comparison of the nitrogen sources(N2 and NH3)influence on AlN films grown by high-temperature halide vapor phase epitaxy(HVPE)is reported.The x-ray rocking curves(XRCs)indicate that the full width at half maximum(F...A comparison of the nitrogen sources(N2 and NH3)influence on AlN films grown by high-temperature halide vapor phase epitaxy(HVPE)is reported.The x-ray rocking curves(XRCs)indicate that the full width at half maximum(FWHM)of(0002)plane for AlN films using N2 as nitrogen source is generally smaller than that using NH3.Optical microscope and atomic force microscope(AFM)results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10µm using N2 as the nitrogen source compared to that using NH3.Compared with one-step growth,two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N2 as the nitrogen source.These investigations reveal that using N2 as nitrogen source in HVPE growth of AlN is immature at present,but exhibits great potential.展开更多
We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy(HⅤPE).The influences of growth condition on surface morphology,residual strain and crystalline quality of Al N films ha...We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy(HⅤPE).The influences of growth condition on surface morphology,residual strain and crystalline quality of Al N films have been investigated.With the increase of theⅤ/Ⅲratio,the growth mode of Al N grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology.Atomic force microscopy(AFM),scanning electron microscopy(SEM)and Raman analysis show that cracks appear due to tensile stress in the films with the lowestⅤ/Ⅲratio and the highestⅤ/Ⅲratio with a thickness of about 3μm.In contrast,under the mediumⅤ/Ⅲratio growth condition,the porous film can be obtained.Even when the thickness of the porous Al N film is further increased to 8μm,the film remains porous and crack-free,and the crystal quality is improved.展开更多
A new method for analysis of trace mercury in water samples was developed, based on the combination of preconcentration/separation using dithizone-modified nanometer titanium dioxide （TiO2） as a solid phase extracta...A new method for analysis of trace mercury in water samples was developed, based on the combination of preconcentration/separation using dithizone-modified nanometer titanium dioxide （TiO2） as a solid phase extractant and determination by cold vapor atomic adsorption spectrometry （CVAAS）. Dithizone was dissolved with alcohol and loaded on the surface of nano-sized TiO2 powders by stirring. The static adsorption behavior of Hg^2＋on the dithizone-modified nanoparficles was investigated in detail. It was found that excellent adsorption ratio for Hg^2＋ could be obtained in the pH range of 7-8 with an oscillation time of 15 rain, and a 5 mL of 3.5 mol·L^-1 HCI solution could quantitatively elute Hg^2＋ from nanometer TiO2 powder. Common coexisting ions caused no obvious influence on the determination of mercury. The mechanisms for the adsorption and desorption were discussed. The detection limit （30） for Hg^2＋ was calculated to be 5 ng·L^-1. The proposed method was applied to the determination of Hg^2＋ in a mineral water sample and a Zhujiang River water sample. By the standard addition method, the average recoveries were found to be 94.4%-108.3% with RSD （n = 5） of 2.9%-3.5%.展开更多
We report chemical vapor phase polymerization(VPP) deposition of poly(3,4-ethylenedioxythiophene)(PEDOT) and PEDOT/graphene on porous dielectric tantalum pentoxide(Ta_2O_5) surface as cathode films for solid tantalum ...We report chemical vapor phase polymerization(VPP) deposition of poly(3,4-ethylenedioxythiophene)(PEDOT) and PEDOT/graphene on porous dielectric tantalum pentoxide(Ta_2O_5) surface as cathode films for solid tantalum electrolyte capacitors. The modified oxidant/oxidant-graphene films were first deposited on Ta_2O_5 by dip-coating, and VPP process was subsequently utilized to transfer oxidant/oxidant-graphene into PEDOT/PEDOT-graphene films. The SEM images showed PEDOT/PEDOT-graphene films was successfully constructed on porous Ta_2O_5 surface through VPP deposition, and a solid tantalum electrolyte capacitor with conducting polymer-graphene nano-composites as cathode films was constructed. The high conductivity nature of PEDOT-graphene leads to resistance decrease of cathode films and lower contact resistance between PEDOT/graphene and carbon paste. This nano-composite cathode films based capacitor showed ultralow equivalent series resistance(ESR) ca. 12 m? and exhibited excellent capacitance-frequency performance, which can keep 82% of initial capacitance at 500 KHz. The investigation on leakage current revealed that the device encapsulation process has no influence on capacitor leakage current, indicating the excellent mechanical strength of PEDOT/PEDOT-gaphene films. This high conductivity and mechanical strength of graphene-based polymer films shows promising future for electrode materials such as capacitors, organic solar cells and electrochemical energy storage devices.展开更多
The surface of high strength and high modulus polyethylene (PE) fiber has been modified bygrafting with acrylic acid.Benzophenone and acrylic acid in vapor phase were UV-irradiated in thepresence of the PE tiber subst...The surface of high strength and high modulus polyethylene (PE) fiber has been modified bygrafting with acrylic acid.Benzophenone and acrylic acid in vapor phase were UV-irradiated in thepresence of the PE tiber substrate.Grafting with acrylic acid took place in a thin layer on the sur-face,thus increasing the surface adhesion of PE fiber with epoxy resin.This paper dealt withphoto-polymerization reactions including the role of photoinitiator.The degree of graft increasedwith the enhancing of reaction time,reaction temperature and concentration of initiator.Acetonewas used as carriers of monomer and tiator and able to initiate and promote grafting to the sur-face.ATR-IR and SEM measurements on the grafted surface showed that some polar groups wereintroduced to the surface of PE fibers.Oligomer which existed during the polymerization could beremoved by washing with benzene.展开更多
Kinetic regularities of 4-phenyl-o-tolunitrile ammoxidation on V-Sb-Bi-Zr/γ-Al2O3 oxide catalyst in the temperature interval 633 - 673 K have been studied. It has been established that rates of conversion of 4-phenyl...Kinetic regularities of 4-phenyl-o-tolunitrile ammoxidation on V-Sb-Bi-Zr/γ-Al2O3 oxide catalyst in the temperature interval 633 - 673 K have been studied. It has been established that rates of conversion of 4-phenyl-o-tolu- nitrile into the aimed 4-phenylphthalonitrile and CO2 are described by half-order equation on concentration of substratum and to be independent of the oxygen and ammonia partial pressures. It has been revealed that formation of 4-phenylphthalimide from byproducts is due to hydrolysis of 4-phenylphthalonitrile;carbon dioxide is produced by oxidation of 4-phenyl-o-tolunitrile and decarboxylation of 4-phenylphthalimide, and 4-phenylben- zonitrile is produced from 4-phenyl-o-tolunitrile and 4-phenylphthalimide.展开更多
基金funding from the National Natural Science Foundation of China (22178301,21938011,51876186and 52150410417)the funding from the Natural Science Foundation of Zhejiang Province (LR21B060003 and LZ19E060002)+1 种基金grant from Science Technology Department of Zhejiang Province (2023C01182)supported by Shanxi Institute of Zhejiang University for New Materials and Chemical Industry(2022SZ-TD005)。
文摘Polymer-derived ceramic(PDC) thin films are promising wear-resistant coatings for protecting metals and carbon-carbon composites from corrosion and oxidation.However,the high pyrolysis temperature hinders the applications on substrate materials with low melting points.We report a new synthesis route for PDC coatings using initiated chemical vapor deposited poly(1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane)(pV_3D_3) as the precurs or.We investigated the changes in siloxane moieties and the network topology,and proposed a three-stage mechanism for the thermal annealing process.The rise of the connectivity number for the structures obtained at increased annealing temperatures was found with strong correlation to the enhanced mechanical properties and thermal conductivity.Our PDC films obtained via annealing at 850℃ exhibit at least 14.6% higher hardness than prior reports for PDCs synthesized below 1100℃.Furthermore,thermal conductivity up to 1.02 W(mK)^(-1) was achieved at the annealing temperature as low as 700℃,which is on the same order of magnitude as PDCs obtained above 1100℃.Using minimum thermal conductivity models,we found that the thermal transport is dominated by diffusons in the films below the percolation of rigidity,while ultra-short mean-free path phonons contribute to the thermal conductivity of the films above the percolation threshold.The findings of this work provide new insights for the development of wear-resistant and thermally conductive PDC thin films for durable protection coatings.
基金supported by the National Natural Science Foundation of China (Grant No. 61974158)the Natural Science Fund of Jiangsu Province, China (Grant No. BK20191456)。
文摘A crack-free AlN film with 4.5 μm thickness was grown on a 2-inch hole-type nano-patterned sapphire substrates(NPSSs) by hydride vapor phase epitaxy(HVPE). The coalescence, stress evolution, and dislocation annihilation mechanisms in the AlN layer have been investigated. The large voids located on the pattern region were caused by the undesirable parasitic crystallites grown on the sidewalls of the nano-pattern in the early growth stage. The coalescence of the c-plane AlN was hindered by these three-fold crystallites and the special triangle void appeared. The cross-sectional Raman line scan was used to characterize the change of stress with film thickness, which corresponds to the characteristics of different growth stages of AlN. Threading dislocations(TDs) mainly originate from the boundary between misaligned crystallites and the c-plane AlN and the coalescence of two adjacent c-plane AlN crystals, rather than the interface between sapphire and AlN.
基金Project(51304095)supported by the National Natural Science Foundation of ChinaProject(S2013FZ029)supported by Science and Technology Planning Project of Yunnan Province
文摘Recent findings related to coagulable magnesium vapor nucleation and growth in vacuum were assessed critically, with emphasis on understanding these processes at a fundamental molecular level. The effects of magnesium vapor pressure, condensation temperature, and condensation zone temperature gradient on magnesium vapor nucleation in phase transitions and condensation from atomic collision and coacervation with collision under vacuum conditions were discussed. Magnesium powder and magnesium lump condensates were produced under different conditions and characterized by scanning electron microscopy （SEM） and energy-dispersive X-ray spectroscopy （EDS）. The right condensation zone temperature approach to the liquid transition primarily improved the magnesium vapor concentration rate. The gas-solid phase transition was primarily inhibited by setting a small condenser temperature gradient. Under the right condensation temperature and temperature gradients, increasing magnesium vapor partial pressure improved crystallization and reduced the oxidation rate.
文摘This study focuses on experiments of Au and Cu dissolved in vapor phase in hydrothermal fluids. Experiments prove that Au and Cu can re-distribute in vapor phase and liquid phase during separation of Au- and Cu-bearing supercritical fluids to vapor and liquid phases. These experimental results can illustrate some ore geneses, where boiling phenomena of ore fluids were found. Au- and Cubearing NaHCO3-HCl solutions were heated up to more than 350℃ in the main vessel, and then passed through a phase separator in a temperature range from 250℃ to 300℃, separated into vapor and liquid phases. We collected and analyzed the liquid and vapor samples separately, and found that Au and Cu dissolved and distributed in vapor phase. In some cases, the concentrations of Au and Cu in vapor are higher than those in liquid phase. Those experiments are used to interpret field observations of fluid inclusion data of some Au and Cu deposits, and demonstrate that some Au and Cu ore deposits are derived from metals transportation in vapor phase.
基金supported by the National Key R&D Program of China(No.2017YFB0404201)the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Center,PAPD,and the State Grid Shandong Electric Power Company
文摘Halide vapor phase epitaxy(HVPE) is widely used in the semiconductor industry for the growth of Si, GaAs, GaN, etc.HVPE is a non-organic chemical vapor deposition(CVD) technique, characterized by high quality growth of epitaxial layers with fast growth rate, which is versatile for the fabrication of both substrates and devices with wide applications. In this paper, we review the usage of HVPE for the growth and device applications of Ga_2O_3, with detailed discussions on a variety of technological aspects of HVPE. It is concluded that HVPE is a promising candidate for the epitaxy of large-area Ga_2O_3 substrates and for the fabrication of high power β-Ga_2O_3 devices.
基金supported by the National Key Research and Development Plan (No. 2017YFB0404201)the National Science Foundation of China (Nos. 61774147, 61874108)
文摘Due to the remarkable growth rate compared to another growth methods for gallium nitride(GaN)growth,hydride vapor phase epitaxy(HVPE)is now the only method for mass product GaN substrates.In this review,commercial HVPE systems and the GaN crystals grown by them are demonstrated.This article also illustrates some innovative attempts to develop homebuilt HVPE systems.Finally,the prospects for the further development of HVPE for GaN crystal growth in the future are also discussed.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0404100 and 2016YFA0201101)the National Natural Science Foundation of China(Grant Nos.61574164,61704187,and 61604170)+2 种基金the Key Research Program of the Frontier Science of the Chinese Academy of Sciences(Grant No.QYZDB-SSW-SLH042)the State Key Program of the National Natural Science Foundation of China(Grant Nos.61734008and 11435010)the National Key Scientific Instrument and Equipment Development Project,China(Grant No.11327804)。
文摘Doping is essential in the growth of bulk GaN substrates,which could help control the electrical properties to meet the requirements of various types of GaN-based devices.The progresses in the growth of undoped,Si-doped,Ge-doped,Fedoped,and highly pure GaN by hydride vapor phase epitaxy(HVPE) are reviewed in this article.The growth technology and precursors of each type of doping are introduced.Besides,the influence of doping on the optical and electrical properties of GaN are presented in detail.Furthermore,the problems caused by doping,as well as the methods to solve them are also discussed.At last,highly pure GaN is briefly introduced,which points out a new way to realize high-purity semi-insulating(HPSI) GaN.
基金partly supported by Beijing Municipal Natural Science Foundation (No. 4182046)the National Natural Science Foundation of China (No. 61874007)+3 种基金the Fundamental Research Funds for the Central Universities (Nos. buctrc201802, buctrc201830)the Funding for Bagui Talent of Guangxi province (Nos. T31200992001 and T3120097921)ASEAN Young Talented Scientist Program (No. Y312001913)Talent Model Base, China (No. AE31200065)
文摘Aluminum nitride(AlN)is the promising substrates material for the epitaxial growth ofⅢ-nitrides devices,such as high-power,high-frequency electronic,deep ultraviolet optoelectronics and acoustic devices.However,it is rather difficult to obtain the high quality and crack-free thick AlN wafers because of the low surface migration of Al adatoms and the large thermal and lattice mismatches between the foreign substrates and AlN.In this work,the fabrication of AlN material by hydride vapor phase epitaxy(HVPE)was summarized and discussed.At last,the outlook of the production of AlN by HVPE was prospected.
基金Supported by the National Key Research and Development Program of China under Grant No 2017YFB0404201the Solid State Lighting and Energy-Saving Electronics Collaborative Innovation Center,PAPDthe State Grid Shandong Electric Power Company
文摘Two-inch Ga_2O_3 films with（ˉ201）-orientation are grown on c-sapphire at 850–1050°C by hydride vapor phase epitaxy. High-resolution x-ray diffraction shows that pure β-Ga_2O_3 with a smooth surface has a higher crystal quality, and the Raman spectra reveal a very small residual strain in β-Ga_2O_3 grown by hydride vapor phase epitaxy compared with bulk single crystal. The optical transmittance is higher than 80% in the visible and near-UV regions, and the optical bandgap energy is calculated to be 4.9 e V.
基金The project supported by the Nature Science Foundation of Hebei Province, China (No 502121)
文摘The gas phase process of diamond film deposition from CH4/H2 gas mixture by electron-assisted chemical vapor deposition is simulated by the Monte-Carlo method. The electron velocity distribution under different E/P (the ratio of the electric field to gas pressure) is obtained, and the velocity profile is asymmetric. The variation of the number density of CH3 and H with different CH4 concentrations and gas pressure is investigated, and the optimal experimental parameters are obtained: the gas pressure is in the range of 2.5 kPa - 15 kPa and the CH4 concentration is in the range of 0.5% - 1%. The energy carried by the fragment CH3 as the function of the experiment parameters is investigated to explain the diamond growth at low temperature. These results will be helpful to the selection of optimum experimental conditions for high quality diamond films deposition in EACVD and the modeling of plasma chemical vapor deposition.
文摘Loop Heat Pipe (LHP) performance strongly depends on the performance of a wick that is porous media inserted in an evaporator. In this paper, the visualization results of thermo-fluid behavior on the surface of the wick with microscopic infrared thermography were reported. In this study, 2 different samples that simulated a part of wick in the evaporator were used. The wicks were made by different two materials: polytetrafluoroethylene (PTFE) and stainless steel (SUS). The pore radii of PTFE wick and SUS wick are 1.2 μm and 22.5 μm. The difference of thermo-fluid behavior that was caused by the difference of material was investigated. These two materials include 4 different properties: pore radius, thermal conductivity, permeability and porosity. In order to investigate the effect of the thermal conductivity on wick’s operating mode, the phase diagram on the q-k<sub>eff</sub> plane was made. Based on the temperature line profiles, two operating modes: mode of heat conduction and mode of convection were observed. The effective thermal conductivity of the porous media has strong effect on the operating modes. In addition, the difference of heat leak through the wick that was caused by the difference of the material was discussed.
基金supported in parts by the National Natural Science Foundation of China(No.60776004,60976071)the Laboratory for Thin Film Microfabrication of the Ministry of Education
文摘In this paper we investigated the optical properties of ZnO and Mn doped ZnO nanocrystals that were fabricated by a vapor phase transport growth process, using zinc acetate dihydrate with or without Mn in a constant O2/Ar mixture gas flowing through the furnace at 400600℃, respectively. The as grown ZnO nanocrystals are homogeneous with a mean size of 19 nm observed by scanning electron microscope（SEM）. The optical characteristics were analyzed by absorption spectra and photoluminescence（PL） spectra at room-temperature. For ZnO nanocrystals, a strong and predominant UV emission peaked at 377 nm was found in the PL spectra. For Mn doped ZnO nanocrystals, in addition to the strong UV emission, a strong blue emission peaked at 435 nm was observed as well. By doping Mn ions, the major UV emission shifts from 377 nm to 408 nm, showing that Mn ions were not only incorporated into ZnO Ncs, but also introduced an impurity level in the bandgap. Moreover, with the concentration of Mn increasing, the relative intensities of the two emissions change largely, and the photoluminescence mechanism of them is discussed.
基金Supported by the National Natural Science Foundation of China (No. 20276048).
文摘The mass transfer between non-aqueous phase liquid(NAPL) phase and soil gas phase in soil vapor extraction(SVE) process has been investigated by one-dimensional venting experiments. During quasi-steady volatilization of three single-component NAPLs in a sandy soil, constant initial lumped mass transfer coefficient (λgN,0) canbe obtained if the relative saturation (ξ) between NAPL phase and gas phase is higher than a critical value (ξc), andthe lumped mass transfer coefficient decreases with ξ when ξ＜ξc. It is also shown that the lumped mass transfercoefficient can be increased by blending porous micro-particles into the sandy soil because of the increasing of theinterfacial area.
基金Project supported by the National Key R&D Program of China(Grant No.2017YFB0404100)。
文摘A comparison of the nitrogen sources(N2 and NH3)influence on AlN films grown by high-temperature halide vapor phase epitaxy(HVPE)is reported.The x-ray rocking curves(XRCs)indicate that the full width at half maximum(FWHM)of(0002)plane for AlN films using N2 as nitrogen source is generally smaller than that using NH3.Optical microscope and atomic force microscope(AFM)results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10µm using N2 as the nitrogen source compared to that using NH3.Compared with one-step growth,two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N2 as the nitrogen source.These investigations reveal that using N2 as nitrogen source in HVPE growth of AlN is immature at present,but exhibits great potential.
文摘We report the growth of porous AlN films on C-face SiC substrates by hydride vapor phase epitaxy(HⅤPE).The influences of growth condition on surface morphology,residual strain and crystalline quality of Al N films have been investigated.With the increase of theⅤ/Ⅲratio,the growth mode of Al N grown on C-face 6H-SiC substrates changes from step-flow to pit-hole morphology.Atomic force microscopy(AFM),scanning electron microscopy(SEM)and Raman analysis show that cracks appear due to tensile stress in the films with the lowestⅤ/Ⅲratio and the highestⅤ/Ⅲratio with a thickness of about 3μm.In contrast,under the mediumⅤ/Ⅲratio growth condition,the porous film can be obtained.Even when the thickness of the porous Al N film is further increased to 8μm,the film remains porous and crack-free,and the crystal quality is improved.
基金the Natural Science Foundation of the Department of Education, Guangdong Province, China (No. 02025).
文摘A new method for analysis of trace mercury in water samples was developed, based on the combination of preconcentration/separation using dithizone-modified nanometer titanium dioxide （TiO2） as a solid phase extractant and determination by cold vapor atomic adsorption spectrometry （CVAAS）. Dithizone was dissolved with alcohol and loaded on the surface of nano-sized TiO2 powders by stirring. The static adsorption behavior of Hg^2＋on the dithizone-modified nanoparficles was investigated in detail. It was found that excellent adsorption ratio for Hg^2＋ could be obtained in the pH range of 7-8 with an oscillation time of 15 rain, and a 5 mL of 3.5 mol·L^-1 HCI solution could quantitatively elute Hg^2＋ from nanometer TiO2 powder. Common coexisting ions caused no obvious influence on the determination of mercury. The mechanisms for the adsorption and desorption were discussed. The detection limit （30） for Hg^2＋ was calculated to be 5 ng·L^-1. The proposed method was applied to the determination of Hg^2＋ in a mineral water sample and a Zhujiang River water sample. By the standard addition method, the average recoveries were found to be 94.4%-108.3% with RSD （n = 5） of 2.9%-3.5%.
基金supported by the National Science Foundation of China(NSFC)(No.61101029)the Fundamental Research Funds for the Central Universities(No.ZYGX2010J057)+1 种基金the national defense pre-research foundation(No.9140A23070111DZ02042)A Plan for Supporting the New Century Talents(No.NCET-12-0091)
文摘We report chemical vapor phase polymerization(VPP) deposition of poly(3,4-ethylenedioxythiophene)(PEDOT) and PEDOT/graphene on porous dielectric tantalum pentoxide(Ta_2O_5) surface as cathode films for solid tantalum electrolyte capacitors. The modified oxidant/oxidant-graphene films were first deposited on Ta_2O_5 by dip-coating, and VPP process was subsequently utilized to transfer oxidant/oxidant-graphene into PEDOT/PEDOT-graphene films. The SEM images showed PEDOT/PEDOT-graphene films was successfully constructed on porous Ta_2O_5 surface through VPP deposition, and a solid tantalum electrolyte capacitor with conducting polymer-graphene nano-composites as cathode films was constructed. The high conductivity nature of PEDOT-graphene leads to resistance decrease of cathode films and lower contact resistance between PEDOT/graphene and carbon paste. This nano-composite cathode films based capacitor showed ultralow equivalent series resistance(ESR) ca. 12 m? and exhibited excellent capacitance-frequency performance, which can keep 82% of initial capacitance at 500 KHz. The investigation on leakage current revealed that the device encapsulation process has no influence on capacitor leakage current, indicating the excellent mechanical strength of PEDOT/PEDOT-gaphene films. This high conductivity and mechanical strength of graphene-based polymer films shows promising future for electrode materials such as capacitors, organic solar cells and electrochemical energy storage devices.
文摘The surface of high strength and high modulus polyethylene (PE) fiber has been modified bygrafting with acrylic acid.Benzophenone and acrylic acid in vapor phase were UV-irradiated in thepresence of the PE tiber substrate.Grafting with acrylic acid took place in a thin layer on the sur-face,thus increasing the surface adhesion of PE fiber with epoxy resin.This paper dealt withphoto-polymerization reactions including the role of photoinitiator.The degree of graft increasedwith the enhancing of reaction time,reaction temperature and concentration of initiator.Acetonewas used as carriers of monomer and tiator and able to initiate and promote grafting to the sur-face.ATR-IR and SEM measurements on the grafted surface showed that some polar groups wereintroduced to the surface of PE fibers.Oligomer which existed during the polymerization could beremoved by washing with benzene.
文摘Kinetic regularities of 4-phenyl-o-tolunitrile ammoxidation on V-Sb-Bi-Zr/γ-Al2O3 oxide catalyst in the temperature interval 633 - 673 K have been studied. It has been established that rates of conversion of 4-phenyl-o-tolu- nitrile into the aimed 4-phenylphthalonitrile and CO2 are described by half-order equation on concentration of substratum and to be independent of the oxygen and ammonia partial pressures. It has been revealed that formation of 4-phenylphthalimide from byproducts is due to hydrolysis of 4-phenylphthalonitrile;carbon dioxide is produced by oxidation of 4-phenyl-o-tolunitrile and decarboxylation of 4-phenylphthalimide, and 4-phenylben- zonitrile is produced from 4-phenyl-o-tolunitrile and 4-phenylphthalimide.
