High quality 0.02 mol%,0.05 mol%,and 0.08 mol%Fe:β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe:β-Ga2O3 ...High quality 0.02 mol%,0.05 mol%,and 0.08 mol%Fe:β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe:β-Ga2O3 single crystals showed transmittance of higher than 80%in the near infrared region.With the increase of the Fe doping concentration,the optical bandgaps reduced and room temperature resistivity increased.The resistivity of 0.08 mol%Fe:β-Ga2O3 crystal reached to 3.63×1011Ω·cm.The high resistivity Fe:β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors(FETs).展开更多
β-Ga2O3∶Cr single crystals have potential applications for tunable laser. In β-Ga2O3 crystal structure Cr3+ ions are in octahedron other than tetrahedron. So the Cr3+ ions are influenced by low field of β-Ga2O3 th...β-Ga2O3∶Cr single crystals have potential applications for tunable laser. In β-Ga2O3 crystal structure Cr3+ ions are in octahedron other than tetrahedron. So the Cr3+ ions are influenced by low field of β-Ga2O3 that results the 4T2 to 4A2 transition and show broad emission around 690 nm. β-Ga2O3 single crystals doped with different Cr3+ concentrations were grown by floating zone technique. Their absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were calculated based on the absorption spectra.展开更多
Ta5+doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irr...Ta5+doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irradiation spectra, and PL decay profiles of the samples were measured at room temperature.The relevant results show that the optical transmittance of the samples annealed in the air or nitrogen gas was improved.By drawing the(ahv)2–hv graph,it can be seen that the band gap decreased after being annealed in the air, but increased in nitrogen gas.The PL spectra and x-ray irradiation spectra show that the luminescent intensity of the sample annealed in the air increased substantially,while decreased for the sample annealed in nitrogen.The PL decay time of the Ta:β-Ga2O3 annealed in the air increased significantly compared with that of the Ta:β-Ga2O3 sample without annealing, but the tendency after annealing in nitrogen gas was opposite.展开更多
In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep leve...In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps.An approximately 10 min,and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron(Fe)–dopedβ-Ga2O3 substrate and germanium(Ge)–dopedβ-Ga2O3 epitaxial layer respectively.On-state current lag is more severe due to widely reported defect trap EC–0.82 e V over EC–0.78 e V,-0.75 e V present in Iron(Fe)-dopedβ-Ga2O3 bulk crystals.A negligible amount of current degradation is observed in the latter case due to the trap level at EC–0.98 e V.It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area.This investigation of reversible current collapse phenomenon and assessment of recovery time inβ-Ga2O3 HEMT is carried out through 2 D device simulations using appropriate velocity and charge transport models.This work can further help in the proper characterization ofβ-Ga2O3 devices to understand temporary and permanent device degradation.展开更多
The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-c...The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.展开更多
Single-crystal GaN layers have been obtained by nitridingβ-Ga2O3 films in NH3 atmosphere.The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated.The nitridation ...Single-crystal GaN layers have been obtained by nitridingβ-Ga2O3 films in NH3 atmosphere.The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated.The nitridation process results in lots of holes in the surface of films.The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films.The converted Ga N porous films show the single-crystal structures and lowstress,which can be used as templates for the epitaxial growth of high-quality GaN.展开更多
超宽禁带半导体单斜氧化镓(β-Ga2O3)拥有4.6-4.9 e V的禁带宽度、高介电常数与击穿电场和良好的化学与热稳定性,在紫外透明电极、高温气体传感器、深紫外光电探测器以及高压大功率器件等领域具有重要潜在应用。本研究聚焦于β-Ga2O3纳...超宽禁带半导体单斜氧化镓(β-Ga2O3)拥有4.6-4.9 e V的禁带宽度、高介电常数与击穿电场和良好的化学与热稳定性,在紫外透明电极、高温气体传感器、深紫外光电探测器以及高压大功率器件等领域具有重要潜在应用。本研究聚焦于β-Ga2O3纳米材料的制备,探究各生长参数对β-Ga2O3纳米材料性质的影响。本研究中通过优化生长条件,解决了β-Ga2O3纳米材料制备过程中晶体质量不高、生长方向不可控的问题,制备出了高质量的、厚度可控的单晶(201)β-Ga2O3纳米线、(010)β-Ga2O3纳米带与纳米片。展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 50025206, 50472024 and 20151002, and National Basic Research Programme of China under Grant No 2002CB613505. YU Da-Peng is supported by the Cheung Kong Scholar Programme.
基金the Scientific and Innovative Action Plan of Shanghai,China(Grant No.18511110502)Equipment Pre-research Fund Key Project,China(Grant No.6140922010601).
文摘High quality 0.02 mol%,0.05 mol%,and 0.08 mol%Fe:β-Ga2O3 single crystals were grown by the floating zone method.The crystal structure,optical,electrical,and thermal properties were measured and discussed.Fe:β-Ga2O3 single crystals showed transmittance of higher than 80%in the near infrared region.With the increase of the Fe doping concentration,the optical bandgaps reduced and room temperature resistivity increased.The resistivity of 0.08 mol%Fe:β-Ga2O3 crystal reached to 3.63×1011Ω·cm.The high resistivity Fe:β-Ga2O3 single crystals could be applied as the substrate for the high-power field effect transistors(FETs).
基金Project supported by the National Natural Science Foundation of China (50472032) and Hundred Talents Program of Chinese Academy of Sciences
文摘β-Ga2O3∶Cr single crystals have potential applications for tunable laser. In β-Ga2O3 crystal structure Cr3+ ions are in octahedron other than tetrahedron. So the Cr3+ ions are influenced by low field of β-Ga2O3 that results the 4T2 to 4A2 transition and show broad emission around 690 nm. β-Ga2O3 single crystals doped with different Cr3+ concentrations were grown by floating zone technique. Their absorption spectra and fluorescence spectra were measured at room temperature. The values of field splitting parameter Dq and Racah parameter B were calculated based on the absorption spectra.
基金Project supported by the National Natural Science Foundation of China(Grant No.51802327)the Science and Technology Commission of Shanghai Municipality,China(Grant No.18511110500)
文摘Ta5+doped β-Ga2O3 single crystals were grown by using the optical floating zone method, and then annealed in the air and nitrogen gas at 1400℃ for 20 hours.The transmittance spectra, photoluminescence(PL), x-ray irradiation spectra, and PL decay profiles of the samples were measured at room temperature.The relevant results show that the optical transmittance of the samples annealed in the air or nitrogen gas was improved.By drawing the(ahv)2–hv graph,it can be seen that the band gap decreased after being annealed in the air, but increased in nitrogen gas.The PL spectra and x-ray irradiation spectra show that the luminescent intensity of the sample annealed in the air increased substantially,while decreased for the sample annealed in nitrogen.The PL decay time of the Ta:β-Ga2O3 annealed in the air increased significantly compared with that of the Ta:β-Ga2O3 sample without annealing, but the tendency after annealing in nitrogen gas was opposite.
基金an outcome of the collaborative R&D work undertaken in the project under the Visvesvaraya PhD Scheme of Ministry of Electronics&Information Technology,Govt.of India,being implemented by Digital India Corporation。
文摘In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps.An approximately 10 min,and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron(Fe)–dopedβ-Ga2O3 substrate and germanium(Ge)–dopedβ-Ga2O3 epitaxial layer respectively.On-state current lag is more severe due to widely reported defect trap EC–0.82 e V over EC–0.78 e V,-0.75 e V present in Iron(Fe)-dopedβ-Ga2O3 bulk crystals.A negligible amount of current degradation is observed in the latter case due to the trap level at EC–0.98 e V.It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area.This investigation of reversible current collapse phenomenon and assessment of recovery time inβ-Ga2O3 HEMT is carried out through 2 D device simulations using appropriate velocity and charge transport models.This work can further help in the proper characterization ofβ-Ga2O3 devices to understand temporary and permanent device degradation.
基金supported by the National Natural Science Foundation of China(Grunt No.61774019)。
文摘The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.
基金Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0404201)the Six-Talent Peaks Project in Jiangsu Province,China(Grant No.XCL-107)+2 种基金the State Key Research and Development Program of Jiangsu Province,China(Grant No.BE2018115)the Fund from the Solid-state Lighting and Energy-saving Electronics Collaborative Innovation Center,PAPDthe Fund from the State Grid Shandong Electric Power Company
文摘Single-crystal GaN layers have been obtained by nitridingβ-Ga2O3 films in NH3 atmosphere.The effect of the temperature and time on the nitridation and conversion of Ga2O3 films have been investigated.The nitridation process results in lots of holes in the surface of films.The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films.The converted Ga N porous films show the single-crystal structures and lowstress,which can be used as templates for the epitaxial growth of high-quality GaN.
文摘超宽禁带半导体单斜氧化镓(β-Ga2O3)拥有4.6-4.9 e V的禁带宽度、高介电常数与击穿电场和良好的化学与热稳定性,在紫外透明电极、高温气体传感器、深紫外光电探测器以及高压大功率器件等领域具有重要潜在应用。本研究聚焦于β-Ga2O3纳米材料的制备,探究各生长参数对β-Ga2O3纳米材料性质的影响。本研究中通过优化生长条件,解决了β-Ga2O3纳米材料制备过程中晶体质量不高、生长方向不可控的问题,制备出了高质量的、厚度可控的单晶(201)β-Ga2O3纳米线、(010)β-Ga2O3纳米带与纳米片。
