期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Second-Order Raman Scattering from n- and p-Type 4H-SiC
1
作者 高欣 孙国胜 +4 位作者 李晋闽 王雷 赵万顺 张永新 曾一平 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第12期1555-1560,共6页
The results of second-order Raman-scattering experiments on n- and p-type 4H-SiC are presented,covering the acoustic and the optical overtone spectral regions.Some of the observed structures in the spectra are assigne... The results of second-order Raman-scattering experiments on n- and p-type 4H-SiC are presented,covering the acoustic and the optical overtone spectral regions.Some of the observed structures in the spectra are assigned to particular phonon branches and the points in the Brillouin zone from which the scattering originates.There exists a doublet at 626/636cm -1 with energy difference about 10cm -1 in both n- and p-type 4H-SiC,which is similar to the doublet structure with the same energy difference founded in hexagonal GaN,ZnO, and AlN.The cutoff frequency at 1926cm -1 of the second-order Raman is not the overtone of the A 1(LO) peak of the n-type doping 4H-SiC,but that of the undoping one.The second-order Raman spectrum of 4H-SiC can hardly be affected by doping species or doping density. 展开更多
关键词 H-SiC second-order Raman cutoff frequency
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部