This paper theoretically analyzes major factors influencing spontaneous combustion of coal, such as molecule structure of coal, porosity, temperature, concentration of oxygen, coal thickness, velocity of face advance,...This paper theoretically analyzes major factors influencing spontaneous combustion of coal, such as molecule structure of coal, porosity, temperature, concentration of oxygen, coal thickness, velocity of face advance, and so on; and probes into how they affect the process of spontaneous combustion of coal, which is of momentous significance to predict or control self ignition of coal.展开更多
A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) ...A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.展开更多
基金ThearticleissupportedfinanciallybyNationalNaturalScienceFoundationofChina (No 59974 0 2 0 )andSpecialFoundationofShanxiEdu cat
文摘This paper theoretically analyzes major factors influencing spontaneous combustion of coal, such as molecule structure of coal, porosity, temperature, concentration of oxygen, coal thickness, velocity of face advance, and so on; and probes into how they affect the process of spontaneous combustion of coal, which is of momentous significance to predict or control self ignition of coal.
文摘A single Complementary Metal Oxide Semiconductor (CMOS) image sensor based on 0.35μm process along with its design and implementation is introduced in this paper. The pixel ar-chitecture of Active Pixel Sensor (APS) is used in the chip,which comprises a 256×256 pixel array together with column amplifiers,scan array circuits,series interface,control logic and Analog-Digital Converter (ADC). With the use of smart layout design,fill factor of pixel cell is 43%. Moreover,a new method of Dynamic Digital Double Sample (DDDS) which removes Fixed Pattern Noise (FPN) is used. The CMOS image sensor chip is implemented based on the 0.35μm process of chartered by Multi-Project Wafer (MPW). This chip performs well as expected.
