本文研究了0.8μm SOI NMOS晶体管,经剂量率为50rad(Si)/s的60Coγ射线辐照之后的总剂量效应,分析了器件在不同辐照条件和测量偏置下的辐照响应特性.研究结果表明:器件辐照时的栅偏置电压越高,辐照后栅氧化层中积累的空穴陷阱电荷越多,...本文研究了0.8μm SOI NMOS晶体管,经剂量率为50rad(Si)/s的60Coγ射线辐照之后的总剂量效应,分析了器件在不同辐照条件和测量偏置下的辐照响应特性.研究结果表明:器件辐照时的栅偏置电压越高,辐照后栅氧化层中积累的空穴陷阱电荷越多,引起的漏极泄漏电流越大.对于漏偏置为5V的器件,当栅电压大于阈值电压时,前栅ID-VG特性曲线中的漏极电流因碰撞电离而突然增大,体电极的电流曲线呈现倒立的钟形.展开更多
氮化镓功率器件凭借优异性能被抗辐照应用领域重点关注,为探究氮化镓功率器件抗γ射线辐照损伤能力,明确其辐射效应退化机制,针对增强型AlGaN/GaN高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)器件开展不同偏置(开态、...氮化镓功率器件凭借优异性能被抗辐照应用领域重点关注,为探究氮化镓功率器件抗γ射线辐照损伤能力,明确其辐射效应退化机制,针对增强型AlGaN/GaN高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)器件开展不同偏置(开态、关态和零偏置)条件下的γ射线辐照与不同温度的退火试验,分析器件电学性能同偏置条件和退火环境之间的响应规律。结果表明:随着γ射线辐照剂量的增加,器件阈值电压负漂,跨导峰值、饱和漏电流和反向栅泄漏电流逐渐增加,且在开态偏置条件下器件的电学特性退化更加严重;此外,高温环境下退火会导致器件的电学性能恢复更加明显。分析认为γ射线辐照剂量越高,产生的辐照缺陷越多,同时栅极偏压会降低辐照引发的电子-空穴对的初始复合率,逃脱初始复合的空穴数量增多,进一步增加了缺陷电荷的浓度;而高温环境会导致器件发生隧穿退火或热激发退火,有助于器件性能恢复。氮化镓功率器件的辐照损伤过程及机理研究,为其空间环境应用的评估验证提供了数据支撑。展开更多
Objective To investigate whether environmental cues associated with different properties of morphine could regulate the extracellular levels of glutamate and y-aminobutyric acid （GABA） in the hippocampal ventral sub...Objective To investigate whether environmental cues associated with different properties of morphine could regulate the extracellular levels of glutamate and y-aminobutyric acid （GABA） in the hippocampal ventral subiculum, which play a critical role in the reinstatement of drug-seeking behavior induced by environmental cues. Methods Conditioning place preference （CPP） and conditioning place aversion （CPA） models were used to establish environment associated with rewarding and aversive properties of morphine respectively. Microdialysis and high performance liquid chromatography were used to measure the extracelluar level of glutamate and GABA in the ventral subiculum under these environmental cues. Results Exposure to the environmental cues associated with rewarding properties of morphine resulted in a decrease （approximately 11%） of extracellular level of GABA in ventral subiculum, and exposure to the environmental cues associated with aversive properties of morphine resulted in an increase （approximately 230%） of extracellular level of glutamate in ventral subiculum. Conclusion Environmental cues associated with different properties of morphine modulate the release of distinct neurotransmitters in the hippocampal ventral subiculum possibly through different neural circuit.展开更多
文摘本文研究了0.8μm SOI NMOS晶体管,经剂量率为50rad(Si)/s的60Coγ射线辐照之后的总剂量效应,分析了器件在不同辐照条件和测量偏置下的辐照响应特性.研究结果表明:器件辐照时的栅偏置电压越高,辐照后栅氧化层中积累的空穴陷阱电荷越多,引起的漏极泄漏电流越大.对于漏偏置为5V的器件,当栅电压大于阈值电压时,前栅ID-VG特性曲线中的漏极电流因碰撞电离而突然增大,体电极的电流曲线呈现倒立的钟形.
文摘氮化镓功率器件凭借优异性能被抗辐照应用领域重点关注,为探究氮化镓功率器件抗γ射线辐照损伤能力,明确其辐射效应退化机制,针对增强型AlGaN/GaN高电子迁移率晶体管(High Electron Mobility Transistor,HEMT)器件开展不同偏置(开态、关态和零偏置)条件下的γ射线辐照与不同温度的退火试验,分析器件电学性能同偏置条件和退火环境之间的响应规律。结果表明:随着γ射线辐照剂量的增加,器件阈值电压负漂,跨导峰值、饱和漏电流和反向栅泄漏电流逐渐增加,且在开态偏置条件下器件的电学特性退化更加严重;此外,高温环境下退火会导致器件的电学性能恢复更加明显。分析认为γ射线辐照剂量越高,产生的辐照缺陷越多,同时栅极偏压会降低辐照引发的电子-空穴对的初始复合率,逃脱初始复合的空穴数量增多,进一步增加了缺陷电荷的浓度;而高温环境会导致器件发生隧穿退火或热激发退火,有助于器件性能恢复。氮化镓功率器件的辐照损伤过程及机理研究,为其空间环境应用的评估验证提供了数据支撑。
基金supported by the National Natural Science Foundation of China(No.30230130 and No.30400129)the Ministry of Science and Technology of China(No.2003CB515405,No.2005CB522406)+1 种基金the Program for Changjiang Scholars and Innovative Research Team of Ministry of Education of ChinaShanghai Municipal Commission for Science and Technology(No.06JC14008).
文摘Objective To investigate whether environmental cues associated with different properties of morphine could regulate the extracellular levels of glutamate and y-aminobutyric acid （GABA） in the hippocampal ventral subiculum, which play a critical role in the reinstatement of drug-seeking behavior induced by environmental cues. Methods Conditioning place preference （CPP） and conditioning place aversion （CPA） models were used to establish environment associated with rewarding and aversive properties of morphine respectively. Microdialysis and high performance liquid chromatography were used to measure the extracelluar level of glutamate and GABA in the ventral subiculum under these environmental cues. Results Exposure to the environmental cues associated with rewarding properties of morphine resulted in a decrease （approximately 11%） of extracellular level of GABA in ventral subiculum, and exposure to the environmental cues associated with aversive properties of morphine resulted in an increase （approximately 230%） of extracellular level of glutamate in ventral subiculum. Conclusion Environmental cues associated with different properties of morphine modulate the release of distinct neurotransmitters in the hippocampal ventral subiculum possibly through different neural circuit.
