An immobilized Cu2O/g-C3N4 heterojunction film was successfully made on an FTO substrate by electrophoretic deposition of g-C3N4 on a Cu2O thin film.The photoelectrochemical（PEC） performance for water splitting by t...An immobilized Cu2O/g-C3N4 heterojunction film was successfully made on an FTO substrate by electrophoretic deposition of g-C3N4 on a Cu2O thin film.The photoelectrochemical（PEC） performance for water splitting by the Cu2O/g-C3N4 film was better than pure g-C3N4 and pure Cu2O film.Under-0.4 V external bias and visible light irradiation,the photocurrent density and PEC hydrogen evolution efficiency of the optimized Cu2O/g-C3N4 film was-1.38 mA/cm^2 and 0.48 mL h^-1 cm^-2,respectively.The enhanced PEC performance of Cu2O/g-C3N4 was attributed to the synergistic effect of light coupling and a matching energy band structure between g-C3N4 and Cu2O as well as the external bias.展开更多
Well‐aligned zinc oxide(ZnO)nanotube arrays loaded with tungsten trioxide(WO3)nanoparticles were synthesized by a process involving chemical bath deposition in combination with pyrolysis.The prepared ZnO–WO3composit...Well‐aligned zinc oxide(ZnO)nanotube arrays loaded with tungsten trioxide(WO3)nanoparticles were synthesized by a process involving chemical bath deposition in combination with pyrolysis.The prepared ZnO–WO3composites were characterized by X‐ray diffraction,energy dispersive spectrometer,field emission scanning electron microscopy,X‐ray photoelectron spectroscopy,photoluminescence spectroscopy,Fourier transform infrared spectroscopy and UV–vis diffuse reflectance spectroscopy.The photocatalytic activities of the ZnO–WO3composite photocatalysts with different WO3contents for the degradation of the herbicide chlorinated phenoxyacetic acid(MCPA‐Na)under simulated sunlight irradiation were systematically evaluated.It was found that the WO3content had a great effect on the photocatalytic activity of the ZnO–WO3composites.The composite with3%WO3showed the highest photocatalytic activity,with a degradation rate of chlorinated phenoxyacetic acid of98.5%after200min with20mg of photocatalyst.This photodegradation rate was about twice that of the pristine ZnO nanotube array.The recombination of photogenerated electrons and holes was increasingly suppressed with the addition of WO3to ZnO.The high relative content of defects on the surface of the ZnO–WO3composites was beneficial to their photocatalytic activity in the degradation of chlorinated phenoxyacetic acid.?2018,Dalian Institute of Chemical Physics,Chinese Academy of Sciences.Published by Elsevier B.V.All rights reserved.展开更多
With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has ...With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.展开更多
Laser was coupled into an optical fiber,on which covered a layer of well-aligned carbon nanotubes(CNTs)serving as cathode,to tune the field emission of the cathode.CNT arrays as field emission cathode were synthesized...Laser was coupled into an optical fiber,on which covered a layer of well-aligned carbon nanotubes(CNTs)serving as cathode,to tune the field emission of the cathode.CNT arrays as field emission cathode were synthesized by chemical vapor deposition(CVD)on a naked fiber core.When the laser was coupled into the fiber,the turn-on voltage(Vto at a current density of 1 mA cm?2)decreased from 1.0 to 0.9 kV and the emission current density increased from 0.83 mA cm?2(at a 1 kV bias voltage)to3.04 mA cm?2 on 40μm diameter fiber.A photon absorption mechanism is attributed to the field emission improvement.The estimated effective work function of CNT arrays on the optical fiber decrease from 4.89 to 4.29 eV.The results show the possibility of constructing a waveguide type laser modulated field emission cathode.展开更多
Using two-step growth method and buffer layer annealing treatment,the double heterojunction structures of In_(0.82)Ga_(0.18) As epilayer capped with In As_(0.6)P0.4 layer were prepared on In P substrate by low pressur...Using two-step growth method and buffer layer annealing treatment,the double heterojunction structures of In_(0.82)Ga_(0.18) As epilayer capped with In As_(0.6)P0.4 layer were prepared on In P substrate by low pressure metal organic chemical vapor deposition(LP-MOCVD).Based on the high quality In_(0.82)Ga_(0.18) As structures,the In_(0.82)Ga_(0.18) As PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology,and the device performance was investigated in detail.The typical dark current at the reverse bias VR=10 m V and the resistance area product R0 A are 5.02 μA and 0.29 ?·cm2 at 296 K and 5.98 n A and 405.2 ?·cm2 at 116 K,respectively.The calculated peak detectivities of the In_(0.82)Ga_(0.18) As photodetector are 1.21×1010 cm·Hz1/2/W at 296 K and 4.39×1011 cm·Hz1/2/W at 116 K respectively,where the quantum efficiency η=0.7 at peak wavelength is supposed.The results show that the detection performance of In_(0.82)Ga_(0.18) As prepared by two-step growth method can be improved greatly.展开更多
Ga-doped ZnO nanowires have been synthesized by a pulsed laser chemical vapor deposition method. The crystal structure and photoluminescence spectra indicate that the dopant atoms are well integrated into the ZnO wurt...Ga-doped ZnO nanowires have been synthesized by a pulsed laser chemical vapor deposition method. The crystal structure and photoluminescence spectra indicate that the dopant atoms are well integrated into the ZnO wurtzite lattice. The photocurrent properties at different temperatures have been systematically investigated for nanowires configured as a three-terminal device. Among the experimental highlights, a pronounced semiconductor-to-metal transition occurs upon UV band-to-band excitation. This is a consequence of the reduction in electron mobility arising from the drastically enhanced Coulomb interactions and surface scattering. Another feature is the reproducible presence of two resistance valleys at 220 and 320 K upon light irradiation. This phenomenon originates from the trapping and detrapping processes in the impurity band arising from the native defects as well as the extrinsic Ga dopants. This work demonstrates that due to the dimensional confinement in quasi-one-dimensional structures, enhanced Coulomb interaction, surface scattering, and impurity states can significantly influence charge transport.展开更多
基金supported by the National Natural Science Foundation of China (21173088)the Science and Technology Project of Guangdong Province (2014A030312007, 2015A050502012, 2016A010104013)+1 种基金the China Postdoctoral Science Foundation (2016M592493)the Open Research Fund of Hunan Key Laboratory of Applied Environmental Photocatalysis (CCSU-XT-06),Changsha University~~
文摘An immobilized Cu2O/g-C3N4 heterojunction film was successfully made on an FTO substrate by electrophoretic deposition of g-C3N4 on a Cu2O thin film.The photoelectrochemical（PEC） performance for water splitting by the Cu2O/g-C3N4 film was better than pure g-C3N4 and pure Cu2O film.Under-0.4 V external bias and visible light irradiation,the photocurrent density and PEC hydrogen evolution efficiency of the optimized Cu2O/g-C3N4 film was-1.38 mA/cm^2 and 0.48 mL h^-1 cm^-2,respectively.The enhanced PEC performance of Cu2O/g-C3N4 was attributed to the synergistic effect of light coupling and a matching energy band structure between g-C3N4 and Cu2O as well as the external bias.
基金supported by the National Natural Science Foundation of China(51574071)~~
文摘Well‐aligned zinc oxide(ZnO)nanotube arrays loaded with tungsten trioxide(WO3)nanoparticles were synthesized by a process involving chemical bath deposition in combination with pyrolysis.The prepared ZnO–WO3composites were characterized by X‐ray diffraction,energy dispersive spectrometer,field emission scanning electron microscopy,X‐ray photoelectron spectroscopy,photoluminescence spectroscopy,Fourier transform infrared spectroscopy and UV–vis diffuse reflectance spectroscopy.The photocatalytic activities of the ZnO–WO3composite photocatalysts with different WO3contents for the degradation of the herbicide chlorinated phenoxyacetic acid(MCPA‐Na)under simulated sunlight irradiation were systematically evaluated.It was found that the WO3content had a great effect on the photocatalytic activity of the ZnO–WO3composites.The composite with3%WO3showed the highest photocatalytic activity,with a degradation rate of chlorinated phenoxyacetic acid of98.5%after200min with20mg of photocatalyst.This photodegradation rate was about twice that of the pristine ZnO nanotube array.The recombination of photogenerated electrons and holes was increasingly suppressed with the addition of WO3to ZnO.The high relative content of defects on the surface of the ZnO–WO3composites was beneficial to their photocatalytic activity in the degradation of chlorinated phenoxyacetic acid.?2018,Dalian Institute of Chemical Physics,Chinese Academy of Sciences.Published by Elsevier B.V.All rights reserved.
基金Project(51774341) supported by the National Natural Science Foundation of ChinaProject(2018GK4001) supported by the Science and Technology Tackling and Transformation of Major Scientific and Technological Achievements Project of Hunan Province,China。
文摘With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production.
基金supported by the National Natural Science Foundation of China(Grant Nos.91123018,61172041,61172040,50975226,and 60801022)the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2008AA03A314)the Fundamental Research Funds for the Central Universities
文摘Laser was coupled into an optical fiber,on which covered a layer of well-aligned carbon nanotubes(CNTs)serving as cathode,to tune the field emission of the cathode.CNT arrays as field emission cathode were synthesized by chemical vapor deposition(CVD)on a naked fiber core.When the laser was coupled into the fiber,the turn-on voltage(Vto at a current density of 1 mA cm?2)decreased from 1.0 to 0.9 kV and the emission current density increased from 0.83 mA cm?2(at a 1 kV bias voltage)to3.04 mA cm?2 on 40μm diameter fiber.A photon absorption mechanism is attributed to the field emission improvement.The estimated effective work function of CNT arrays on the optical fiber decrease from 4.89 to 4.29 eV.The results show the possibility of constructing a waveguide type laser modulated field emission cathode.
基金supported by the National Natural Science Foundation of China(Nos.11174224 and 11404246)the Natural Science Foundation of Shandong Province(Nos.BS2015DX015 and ZR2013FM001)+1 种基金the Science and Technology Development Program of Shandong Province(No.2013YD01016)the Higher School Science and Technology Program of Shandong Province(Nos.J13LJ54 and J15LJ54)
文摘Using two-step growth method and buffer layer annealing treatment,the double heterojunction structures of In_(0.82)Ga_(0.18) As epilayer capped with In As_(0.6)P0.4 layer were prepared on In P substrate by low pressure metal organic chemical vapor deposition(LP-MOCVD).Based on the high quality In_(0.82)Ga_(0.18) As structures,the In_(0.82)Ga_(0.18) As PIN photodetector with cut-off wavelength of 2.56 μm at room temperature was fabricated by planar semiconductor technology,and the device performance was investigated in detail.The typical dark current at the reverse bias VR=10 m V and the resistance area product R0 A are 5.02 μA and 0.29 ?·cm2 at 296 K and 5.98 n A and 405.2 ?·cm2 at 116 K,respectively.The calculated peak detectivities of the In_(0.82)Ga_(0.18) As photodetector are 1.21×1010 cm·Hz1/2/W at 296 K and 4.39×1011 cm·Hz1/2/W at 116 K respectively,where the quantum efficiency η=0.7 at peak wavelength is supposed.The results show that the detection performance of In_(0.82)Ga_(0.18) As prepared by two-step growth method can be improved greatly.
文摘Ga-doped ZnO nanowires have been synthesized by a pulsed laser chemical vapor deposition method. The crystal structure and photoluminescence spectra indicate that the dopant atoms are well integrated into the ZnO wurtzite lattice. The photocurrent properties at different temperatures have been systematically investigated for nanowires configured as a three-terminal device. Among the experimental highlights, a pronounced semiconductor-to-metal transition occurs upon UV band-to-band excitation. This is a consequence of the reduction in electron mobility arising from the drastically enhanced Coulomb interactions and surface scattering. Another feature is the reproducible presence of two resistance valleys at 220 and 320 K upon light irradiation. This phenomenon originates from the trapping and detrapping processes in the impurity band arising from the native defects as well as the extrinsic Ga dopants. This work demonstrates that due to the dimensional confinement in quasi-one-dimensional structures, enhanced Coulomb interaction, surface scattering, and impurity states can significantly influence charge transport.
