期刊文献+
共找到12篇文章
< 1 >
每页显示 20 50 100
高电阻率CdSSe光电导薄膜 被引量:3
1
作者 朱振才 顾培夫 唐晋发 《半导体光电》 CAS CSCD 北大核心 1992年第4期377-379,383,共4页
采用真空热蒸发工艺,用掺杂(Cu,Cl)敏化的方法制备高电阻率的CdSSe 光电导薄膜。并测试了不同制备条件和不同热处理工艺下样品的光电导性能。最后讨论了主要的制备工艺参数对 CdSSe 光电导性能的影响。用这种工艺制备的 CdSSe 光电导薄... 采用真空热蒸发工艺,用掺杂(Cu,Cl)敏化的方法制备高电阻率的CdSSe 光电导薄膜。并测试了不同制备条件和不同热处理工艺下样品的光电导性能。最后讨论了主要的制备工艺参数对 CdSSe 光电导性能的影响。用这种工艺制备的 CdSSe 光电导薄膜,用于液晶光阀空间光调制器件上,得到了很好的效果。 展开更多
关键词 光电导薄膜 真空蒸发 掺杂 光阀
下载PDF
用于液晶光阀的CdS-CdSe光电导薄膜
2
作者 吕勇 郑臻荣 《北京机械工业学院学报》 2004年第2期14-17,共4页
为得到高灵敏度的光传感器,研究了真空蒸发的CdS和CdSe双层光电导薄膜掺杂Cu和Cl对光电性质的影响。研究发现,适当选择Cu和Cl的掺杂比,可以使光电导薄膜的暗电导显著减少而光电导显著增加。这种掺杂光电导薄膜的响应时间约为5~10ms,而... 为得到高灵敏度的光传感器,研究了真空蒸发的CdS和CdSe双层光电导薄膜掺杂Cu和Cl对光电性质的影响。研究发现,适当选择Cu和Cl的掺杂比,可以使光电导薄膜的暗电导显著减少而光电导显著增加。这种掺杂光电导薄膜的响应时间约为5~10ms,而对非掺杂薄膜的响应时间大于100ms。这种光电导薄膜已被成功地应用于大屏幕显示和光信息处理的可见光液晶光阀,并制成了红外液晶光阀,以用于可见光-红外光动态图像转换系统。 展开更多
关键词 光电导薄膜 液晶光闽 真空蒸发 CdS-CdSe 光传感器
下载PDF
光电可调控频率选择表面 被引量:5
3
作者 王君 孙艳军 +3 位作者 纪雪松 王丽 王越 冷雁冰 《光子学报》 EI CAS CSCD 北大核心 2018年第3期8-16,共9页
为实现频率选择表面(FSS)谐振频率的光电可调控特性,提出一种光电可调控频率选择表面.利用光电导薄膜光照导电特性控制金属FSS结构尺寸变化,实现FSS的主动可调.理论阐述了光电导及FSS选频特性原理,采用CST软件分别仿真了"Y"... 为实现频率选择表面(FSS)谐振频率的光电可调控特性,提出一种光电可调控频率选择表面.利用光电导薄膜光照导电特性控制金属FSS结构尺寸变化,实现FSS的主动可调.理论阐述了光电导及FSS选频特性原理,采用CST软件分别仿真了"Y"形带通型、"圆"形带通型和"Y"形带阻型三种FSS在光照时的频选特性.结果表明:随着结构尺寸变化,FSS的中心谐振频率分别从18 GHz、25 GHz、20.5GHz变为20.5GHz、29GHz、16.5GHz.采用镀膜、刻蚀及电子束蒸发等技术分别制作了单元结构尺寸变化前的金属FSS,以及变化后的金属与光电导薄膜结合的FSS,并对样件进行测试,结果表明:中心谐振频率分别从18GHz、24GHz、20GHz变为20GHz、28GHz、17GHz,与仿真变化趋势基本一致.采用该方法既可实现FSS中心谐振频率的可调控,也可从结构上实现FSS带通型和带阻型的转变. 展开更多
关键词 表面光学 频率选择表面 光电导薄膜 光电调控
下载PDF
光致导电FSS用于红外光学窗的仿真与实验
4
作者 王君 冷雁冰 +3 位作者 孙艳军 纪雪松 王丽 王越 《真空科学与技术学报》 EI CAS CSCD 北大核心 2018年第7期628-632,共5页
提出将光致导电FSS用于红外光学窗,利用其光照导电特性改变FSS导电区域尺寸,实现带通频段的调控。以方孔型FSS为例进行仿真,结构尺寸变化前后中心谐振频率分别为13.2、14 GHz。采用镀膜及光刻工艺按设计参数在蓝宝石基底上制备光致导电... 提出将光致导电FSS用于红外光学窗,利用其光照导电特性改变FSS导电区域尺寸,实现带通频段的调控。以方孔型FSS为例进行仿真,结构尺寸变化前后中心谐振频率分别为13.2、14 GHz。采用镀膜及光刻工艺按设计参数在蓝宝石基底上制备光致导电FSS并测试,结果显示:配比为CdS∶CdSe(1∶1~5∶1)、掺杂Cl^-∶In^(3+)∶Cu^(2+)(3.6∶2.6∶1.3)的光致导电膜对600 nm的可见光敏感度最高;平均光功率200 mW/cm^2的光照射前后中心频率从13.1变为14.2 GHz;该样件与只有金属FSS的蓝宝石样件相比,红外透过率降低约4%,与FSS表面占有率对红外透过影响计算结果一致。证明了光致导电FSS用于红外光学窗的可行性。 展开更多
关键词 红外光学窗 光致电FSS 电子束蒸发 光电导薄膜
原文传递
基于光诱导介电泳的微粒自动化操作实验研究 被引量:3
5
作者 王淑娥 曲艳丽 +2 位作者 董再励 周磊 刘柱 《微纳电子技术》 CAS 北大核心 2011年第2期132-137,共6页
采用等离子体增强化学气相沉积方法(PECVD)制备了氢化非晶硅(a-Si∶H)光电导薄膜,并利用双面胶技术封装ODEP芯片。构建了包括光投影模块和视频监控模块的ODEP自动化操作实验平台。以聚苯乙烯微粒为操作对象,进行微米尺度粒子的ODEP自动... 采用等离子体增强化学气相沉积方法(PECVD)制备了氢化非晶硅(a-Si∶H)光电导薄膜,并利用双面胶技术封装ODEP芯片。构建了包括光投影模块和视频监控模块的ODEP自动化操作实验平台。以聚苯乙烯微粒为操作对象,进行微米尺度粒子的ODEP自动化操作实验,并深入研究了交流电压、投射光颜色和光电极形状对微粒运动速度的影响。实验结果表明,在交流电压频率和投射光颜色相同的条件下,粒子的运动速度与交流电压的幅值成线性关系,施加的交流电压幅值越大,微粒的运动速度越大。在交流电压的幅值和频率相同的条件下,投射光为白色时,粒子的运动速度最大;投射光为蓝色时,粒子的运动速度最小。当投射光为白光,电压为20V,频率为20kHz时,10μm和20μm聚苯乙烯微粒的最大运动速度分别为143μm/s和158μm/s。 展开更多
关键词 光诱介电泳 氢化非晶硅 光电导薄膜 自动化操作 ODEP芯片 虚拟电极
原文传递
Light-Induced Changes in a-Si∶H Films Studied by Transient Photoconductivity
6
作者 张世斌 孔光临 +3 位作者 徐艳月 王永谦 刁宏伟 廖显伯 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第8期794-799,共6页
Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous sem... Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous semiconductors,nor by stretched exponential rule for transient decay from the steady state in photoconductivity.Instead,the data are fit fairly well with a sum of two exponential functions.The results show that the long time decay is governed by deep traps rather than band tail states,and two different traps locating separately at 0.52 and 0.59eV below E _c are responsible for the two exponential functions.They are designated as negatively charged dangling bond D - centers.The light-induced changes in photoconductivity are attributed mainly to the decrease in electron lifetime caused by the increase of recombination centers after light soaking. 展开更多
关键词 amorphous silicon transient photoconductivity light-induced change
下载PDF
Preparation of semiconductor zinc telluride by photoelectrochemical deposition
7
作者 LUO Miao-si MA Zi-wei +4 位作者 ZHANG Zong-liang WANG Zhi-jian JIANG Liang-xing JIA ming LIU Fang-yang 《Journal of Central South University》 SCIE EI CAS CSCD 2022年第9期2899-2910,共12页
With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has ... With the continuous development of electronic industry, people’s demand for semiconductor materials is also increasing. How to prepare semiconductor materials with low cost, low energy consumption and high yield has become one of the hot spots of research. ZnTe is commonly used in the semiconductor industry due to its superior optoelectronic properties. Electrochemical deposition is one of the most frequently used methods to prepare ZnTe thin films. However,the traditional electrochemical deposition technology has many shortcomings, such as slow deposition rate and poor film quality. These hinder the large-scale promotion of zinc telluride electrochemical deposition technology. To solve the problems encountered in the preparation of semiconductor thin films by conventional electrochemical deposition, and based on the photoconductive properties of semiconductor materials themselves, the basic principles of photoelectrochemistry of semiconductor electrodes, and some characteristics of the electrochemical deposition process of semiconductor materials, the use of photoelectrochemical deposition method for the preparation of semiconductor materials was proposed. Firstly, the electrochemical behaviors(electrode reactions, nucleation growth and charge transport process) of the ZnTe electrodeposition under illumination and dark state conditions were studied. Then, the potentiostatic deposition of ZnTe was carried out under light and dark conditions. The phase structure, morphology and composition of the sediments were studied using X-ray diffractometer, scanning electron microscope and other testing methods. Finally, the photoelectrochemical deposition mechanisms were analyzed. Compared with conventional electrochemical deposition, photoelectrochemical deposition increases the current density during deposition and reduces the charge transfer impedance during ZnTe deposition process. In addition, since light illumination promotes the deposition of the difficult-to-deposit element Zn, the component ratio of ZnTe thin films prepared by photoelectrochemical deposition is closer to 1:1, making it a viable and reliable approach for ZnTe production. 展开更多
关键词 photoelectrochemical deposition zinc telluride SEMICONDUCTORS photogenerated electron-hole pairs thin film
下载PDF
光控主动频率选择表面制作及光电性能研究 被引量:4
8
作者 王君 孙艳军 +3 位作者 纪雪松 王丽 王越 冷雁冰 《光学学报》 EI CAS CSCD 北大核心 2018年第5期257-264,共8页
为简化主动频率选择表面(FSS)器件结构,提高其谐振频率的操控性能,提出一种利用光电导薄膜的光照导电特性控制FSS结构尺寸变化的光控主动FSS。从理论角度阐述了FSS结构尺寸与中心谐振频率的关系。以十字带通型光控主动FSS为例,采用CST... 为简化主动频率选择表面(FSS)器件结构,提高其谐振频率的操控性能,提出一种利用光电导薄膜的光照导电特性控制FSS结构尺寸变化的光控主动FSS。从理论角度阐述了FSS结构尺寸与中心谐振频率的关系。以十字带通型光控主动FSS为例,采用CST软件仿真得到光照前后的中心谐振频率,频率由23GHz变为28GHz。采用镀膜、电子束蒸发及光刻等工艺制作出光控主动FSS样件,分析了光电导薄膜中掺杂成分、退火温度、退火时间及光照频率、光照功率等因素对其光电性能的影响。结果显示:调节CdS、CdSe的分子数比(1∶1~5∶1)可改变敏感波长;调节CdCl_2、InCl_3、CuCl_2的比例可改变亮暗方块电阻比,实验中分子数比为(3.6∶2.6∶1.3)时效果最佳;退火温度为750℃、退火时间为30s时光电导薄膜光电特性与欧姆接触达到峰值。测试结果表明:在功率为200mW/cm^2与波长为0.6μm的光照条件下,光控主动FSS的中心谐振频率从光照前的23.8GHz变为28GHz,与仿真结果一致。 展开更多
关键词 表面光学 光控主动频率选择表面 电子束蒸发 光电导薄膜
原文传递
Preparation of SnS∶Ag Thin Films by Pulse Electrodeposition
9
作者 杨永丽 程树英 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第12期2322-2325,共4页
SnS:Ag thin films were deposited on ITO by pulse electro-deposition. They were characterized with X-ray diffraction spectroscopy and atomic force microscope. The as-deposited films have a new phase (Ag8SnS6) with g... SnS:Ag thin films were deposited on ITO by pulse electro-deposition. They were characterized with X-ray diffraction spectroscopy and atomic force microscope. The as-deposited films have a new phase (Ag8SnS6) with good crystallization and big grain size. The conductivity of the films was measured by photoelectrochemical test. It is proved that the SnS:Ag films are p-type of semiconductor. Hall measurement shows that the carrier concentration of the films increases, while their resistivity decreases after Ag-doping. 展开更多
关键词 pulse electrodeposition SnS:Ag thin films electrical and optical properties
原文传递
High-Quality Single-Layer Graphene via Reparative Reduction of Graphene Oxide 被引量:10
10
作者 Boya Dai Lei Fu +4 位作者 Lei Liao Nan Liu Kai Yan Yongsheng Chen Zhongfan Liu 《Nano Research》 SCIE EI CAS CSCD 2011年第5期434-439,共6页
Reduction of graphene oxide (GO) is a promising low-cost synthetic approach to bulk graphene, which offers an accessible route to transparent conducting films and flexible electronics. Unfortunately, the release of ... Reduction of graphene oxide (GO) is a promising low-cost synthetic approach to bulk graphene, which offers an accessible route to transparent conducting films and flexible electronics. Unfortunately, the release of oxygen-containing functional groups inevitably leaves behind vacancies and topological defects on the reduced GO sheet, and its low electrical conductivity hinders the development of practical applications. Here, we present a strategy for real-time repair of the newborn vacancies with carbon radicals produced by thermal decomposition of a suitable precursor. The sheet conductivity of thus-obtained single-layer graphene was raised more than six-fold to 350-410 S/cm (whilst retaining 〉96% transparency). X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy revealed that the conductivity enhancement can be attributed to the formation of additional sp2-C structures. This method provides a simple and efficient process for obtaining highly conductive transparent graphene films. 展开更多
关键词 GRAPHENE graphene oxide reparative reduction transparent flexible electrode
原文传递
Continuous and highly ordered organic semiconductor thin films via dip-coating:the critical role of meniscus angle 被引量:1
11
作者 Xuanyu Liu Yu Zhang +2 位作者 Xiaotao Zhang Rongjin Li Wenping Hu 《Science China Materials》 SCIE EI CSCD 2020年第7期1257-1264,共8页
Dip-coating is a low-cost,high-throughput technique for the deposition of organic semiconductors over large area on various substrates.Tremendous studies have been done and many parameters such as withdrawal speed,sol... Dip-coating is a low-cost,high-throughput technique for the deposition of organic semiconductors over large area on various substrates.Tremendous studies have been done and many parameters such as withdrawal speed,solvent type and solution concentration have been investigated.However,most of the depositions were ribbons or dendritic crystals with low coverage of the substrate due to the ignorance of the critical role of dynamic solution-substrate interactions during dip-coating.In this study,meniscus angle(MA)was proposed to quantify the real-time in-situ solutionsubstrate interactions during dip-coating.By proper surface treatment of the substrate,the value of MA can be tuned and centimeter-sized,continuous and highly ordered organic semiconductor thin films were achieved.The charge transport properties of the continuous thin films were investigated by the construction of organic field-effect transistors.Maximum(average)hole mobility up to 11.9(5.1)cm2V-1s-1was obtained.The average mobility was 82%higher than that of ribbon crystals,indicating the high crystallinity of the thin films.Our work reveals the critical role of dynamic solutionsubstrate interactions during dip-coating.The ability to produce large-area,continuous and highly ordered organic semiconductor thin films by dip-coating could revival the old technique for the application in various optoelectronics. 展开更多
关键词 organic field-effect transistor DIP-COATING meniscus angle charge transport MOBILITY
原文传递
Transparent conductive PVP/AgNWs films for flexible organic light emitting diodes by spraying method 被引量:1
12
作者 胡俊涛 梅文娟 +2 位作者 叶康利 卫庆庆 胡晟 《Optoelectronics Letters》 EI 2016年第3期203-207,共5页
In this study, a simple spraying method is used to prepare the transparent conductive films (TCFs) based on Ag nanowires (AgNWs). Polyvinylpyrrolidone (PVP) is introduced to modify the interface of substrate. Th... In this study, a simple spraying method is used to prepare the transparent conductive films (TCFs) based on Ag nanowires (AgNWs). Polyvinylpyrrolidone (PVP) is introduced to modify the interface of substrate. The transmittance and bending performance are improved by optimizing the number of spraying times and the solution concentration and controlling the annealing time. The spraying times of 20, the concentration of 2 mg/mL and the annealing time of 10 min are chosen to fabricate the PVP/AgNWs films. The transmittance of PVP/AgNWs films is 53.4%----67.9% at 380---780 nm, and the sheet resistance is 30 f~/n which is equivalent to that of commercial indium tin oxide (1TO). During cyclic bending tests to 500 cycles with bending radius of 5 ram, the changes of resistivity are negligible. The performance of PVP/AgNW transparent electrodes has little change after being exposed to the normal environment for 1 000 h. The adhesion to polymeric substrate and the ability to endure bending stress in AgNWs network films are both significantly improved by introducing PVP. Spraying method makes AgNWs form a stratified structure on large-area polymer substrates, and the vacuum annealing method is used to weld the AgNWs together at junctions and substrates, which can improve the electrical conductivity. The experimental results indicate that PVP/AgNW transpar- ent electrodes can be used as transparent conductive electrodes in flexible organic light emitting diodes (OLEDs). 展开更多
关键词 有机发光二极管 透明薄膜 电聚合物 柔性 喷雾法 聚乙烯吡咯烷酮 聚合物基体 喷涂方法
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部