A Si p-π-n diode with β-FeSi 2 particles embedded in the unintentionally doped Si (p--type) was designed for determining the band offset at β-FeSi 2-Si heterojunction.When the diode is under forward bias,the elec...A Si p-π-n diode with β-FeSi 2 particles embedded in the unintentionally doped Si (p--type) was designed for determining the band offset at β-FeSi 2-Si heterojunction.When the diode is under forward bias,the electrons injected via the Si n-p- junction diffuse to and are confined in the β-FeSi 2 particles due to the band offset.The storage charge at the β-FeSi 2-Si heterojunction inversely hamper the further diffusion of electrons,giving rise to the localization of electrons in the p--Si near the Si junction,which prevents them from nonradiative recombination channels.This results in electroluminescence (EL) intensity from both Si and β-FeSi 2 quenching slowly up to room temperature.The temperature dependent ratio of EL intensity of β-FeSi 2 to Si indicates the loss of electron confinement following thermal excitation model.The conduction band offset between Si and β-FeSi 2 is determined to be about 0 2eV.展开更多
Achieving high-efficiency deep blue emitter with CIE_(y)<0.06(CIE,Commission Internationale de L’Eclairage)and external quantum efficiency(EQE)>10%has been a long-standing challenge for traditional fluorescent ...Achieving high-efficiency deep blue emitter with CIE_(y)<0.06(CIE,Commission Internationale de L’Eclairage)and external quantum efficiency(EQE)>10%has been a long-standing challenge for traditional fluorescent materials in organic light-emitting diodes(OLEDs).Here,we report the rational design and synthesis of two new deep blue luminogens:4-(10-(4’-(9 H-carbazol-9-yl)-2,5-dimethyl-[1,1’-biphe nyl]-4-yl)anthracen-9-yl)benzonitrile(2 M-ph-pCzAnBzt)and 4-(10-(4-(9 H-carbazol-9-yl)-2,5-dimethyl phenyl)anthracen-9-yl)benzonitrile(2 M-pCzAnBzt).In particular,2 M-ph-pCzAnBzt produces saturated deep blue emissions in a non-doped electroluminescent device with an exceptionally high EQE of 10.44% and CIE_(x,y)(0.151,0.057).The unprecedented electroluminescent efficiency is attributed to the combined effects of higher-order reversed intersystem crossing and triplet-triplet up-conversion,which are supported by analysis of theoretical calculation,triplet sensitization experiments,as well as nanosecond transient absorption spectroscopy.This research offers a new approach to resolve the shortage of high efficiency deep blue fluorescent emitters.展开更多
Yellow light-emitting diodes(LEDs) are widely utilized in high-quality lighting, light communication,indicator lamps, etc. Owing to their outstanding material properties and device performance, the metal halide perovs...Yellow light-emitting diodes(LEDs) are widely utilized in high-quality lighting, light communication,indicator lamps, etc. Owing to their outstanding material properties and device performance, the metal halide perovskites have demonstrated a significant potential for LED applications. However, the performance of the yellow perovskite LEDs(PeLEDs) is inferior to that of their green and red counterparts, with the maximum external quantum efficiency(EQE) limited to ~3.1%. Further, a majority of the yellow PeLEDs are fabricated using the spin-coating methods. The current study reports the development of the yellow CsPbBr_(2)I PeLEDs based on an all-vacuum deposition approach, which has been widely employed in the commercial organic LEDs(OLEDs). By controlling the co-evaporation rate of CsI and PbBr;, the growth kinetics of the perovskite layer are regulated to achieve a small grain size of~31.8 nm. Consequently, an improved radiative recombination rate(8.04 × 10^(-9)cm^(3)/s) is obtained owing to the spatial confinement effect. The PeLEDs based on the optimal perovskite film demonstrate the yellow electroluminescence(574 nm) with a maximum EQE of ~3.7% and luminance of~16,200 cd/m^(2), thus, representing one of the most efficient and bright yellow PeLEDs. Overall, this study provides a useful guideline for realizing the efficient PeLEDs based on the thermal evaporation strategy and highlights the potential of PeLED as an efficient and bright yellow light source.展开更多
Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost...Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost.Considerable efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport layers.Here,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich structure.Such DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive layer.Also,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge transfer.The DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.展开更多
文摘A Si p-π-n diode with β-FeSi 2 particles embedded in the unintentionally doped Si (p--type) was designed for determining the band offset at β-FeSi 2-Si heterojunction.When the diode is under forward bias,the electrons injected via the Si n-p- junction diffuse to and are confined in the β-FeSi 2 particles due to the band offset.The storage charge at the β-FeSi 2-Si heterojunction inversely hamper the further diffusion of electrons,giving rise to the localization of electrons in the p--Si near the Si junction,which prevents them from nonradiative recombination channels.This results in electroluminescence (EL) intensity from both Si and β-FeSi 2 quenching slowly up to room temperature.The temperature dependent ratio of EL intensity of β-FeSi 2 to Si indicates the loss of electron confinement following thermal excitation model.The conduction band offset between Si and β-FeSi 2 is determined to be about 0 2eV.
基金supported by the National Natural Science Foundation of China(62004074,51727809)the Science and Technology Department of Hubei Province(2019AAA063,2020BAA016)。
文摘Achieving high-efficiency deep blue emitter with CIE_(y)<0.06(CIE,Commission Internationale de L’Eclairage)and external quantum efficiency(EQE)>10%has been a long-standing challenge for traditional fluorescent materials in organic light-emitting diodes(OLEDs).Here,we report the rational design and synthesis of two new deep blue luminogens:4-(10-(4’-(9 H-carbazol-9-yl)-2,5-dimethyl-[1,1’-biphe nyl]-4-yl)anthracen-9-yl)benzonitrile(2 M-ph-pCzAnBzt)and 4-(10-(4-(9 H-carbazol-9-yl)-2,5-dimethyl phenyl)anthracen-9-yl)benzonitrile(2 M-pCzAnBzt).In particular,2 M-ph-pCzAnBzt produces saturated deep blue emissions in a non-doped electroluminescent device with an exceptionally high EQE of 10.44% and CIE_(x,y)(0.151,0.057).The unprecedented electroluminescent efficiency is attributed to the combined effects of higher-order reversed intersystem crossing and triplet-triplet up-conversion,which are supported by analysis of theoretical calculation,triplet sensitization experiments,as well as nanosecond transient absorption spectroscopy.This research offers a new approach to resolve the shortage of high efficiency deep blue fluorescent emitters.
基金supported by the National Natural Science Foundation of China(62050039 61725401 5171101030 51761145048 62004075 62005089 and 51902113)the National Key R&D Program of China(2016YFA0204000 and 2016YFB0201204)+2 种基金the Fundamental Research Funds for the Central Universities(HUST: 2019421JYCXJJ004)the Fund for Innovative Research Groups of the Natural Science Foundation of Hubei Province(2020CFA034)the Graduates’ Innovation Fund of Huazhong University of Science and Technology(HUST)(2021yjscxcy036)。
文摘Yellow light-emitting diodes(LEDs) are widely utilized in high-quality lighting, light communication,indicator lamps, etc. Owing to their outstanding material properties and device performance, the metal halide perovskites have demonstrated a significant potential for LED applications. However, the performance of the yellow perovskite LEDs(PeLEDs) is inferior to that of their green and red counterparts, with the maximum external quantum efficiency(EQE) limited to ~3.1%. Further, a majority of the yellow PeLEDs are fabricated using the spin-coating methods. The current study reports the development of the yellow CsPbBr_(2)I PeLEDs based on an all-vacuum deposition approach, which has been widely employed in the commercial organic LEDs(OLEDs). By controlling the co-evaporation rate of CsI and PbBr;, the growth kinetics of the perovskite layer are regulated to achieve a small grain size of~31.8 nm. Consequently, an improved radiative recombination rate(8.04 × 10^(-9)cm^(3)/s) is obtained owing to the spatial confinement effect. The PeLEDs based on the optimal perovskite film demonstrate the yellow electroluminescence(574 nm) with a maximum EQE of ~3.7% and luminance of~16,200 cd/m^(2), thus, representing one of the most efficient and bright yellow PeLEDs. Overall, this study provides a useful guideline for realizing the efficient PeLEDs based on the thermal evaporation strategy and highlights the potential of PeLED as an efficient and bright yellow light source.
基金support from the National Natural Science Foundation of China(62174104,61735004,and 12174086)the National Key Research and Development Program of China(2016YFB0401702)the Shanghai Science and Technology Committee(19010500600)。
文摘Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication cost.Considerable efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport layers.Here,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich structure.Such DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive layer.Also,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge transfer.The DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.
