We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor （DHBT） produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak comm...We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor （DHBT） produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0. 16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V. The HBT exhibits good microwave performance with a current gain cutoff fre- quency of 80GHz and a maximum oscillation frequency of 40GHz. These results indicate that this InP/InGaAs DHBT is suitable for low-voltage, low-power, and high-frequency applications.展开更多
A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output match...A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm × 495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance： a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than - 10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OPtdB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.展开更多
文摘We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor （DHBT） produced in China. The device has a 2μm × 12μm U-shaped emitter area and demonstrates a peak common-emitter DC current gain of over 300,an offset voltage of 0. 16V,a knee voltage of 0.6V,and an open-base breakdown voltage of about 6V. The HBT exhibits good microwave performance with a current gain cutoff fre- quency of 80GHz and a maximum oscillation frequency of 40GHz. These results indicate that this InP/InGaAs DHBT is suitable for low-voltage, low-power, and high-frequency applications.
基金Supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2009ZX02303-003)
文摘A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm × 495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance： a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than - 10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OPtdB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.
