Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rat...Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates （<40 nm/min） were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.展开更多
We use a simple and controllable method to fabricate GaN-based light-emitting diodes(LEDs) with 22?undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching(ICP-RIE).Ou...We use a simple and controllable method to fabricate GaN-based light-emitting diodes(LEDs) with 22?undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching(ICP-RIE).Our experiment results show that the output powers of the LEDs with 22?undercut sidewalls are 34.8 mW under a 20-mA current injection,6.75% higher than 32.6 mW,the output powers of the conventional LEDs under the same current injection.展开更多
基金Supported by the National Basic Research Program of China under Grant No 2011CBA00607the National Natural Science Foundation of China under Grant No 61376097+1 种基金the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001Specialized Research Fund for the Doctoral Program of Higher Education of China under Grant No20130091110025
基金Supported by the National Basic Research Program of China under Grant No 2011CB302105, the National Natural Science Foundation of China under Grant Nos 11332010, 11102201, 11127201, 11472266 and 11372300, and the Instrument Developing Project of the Chinese Academy of Sciences under Grant No YZ201265.
文摘Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates （<40 nm/min） were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.
基金Project supported by the National High Technology Research and Development Program of China (Grant Nos.2011AA03A112,2011AA03A106,and 2013AA03A101)the National Natural Science Foundation of China (Grant Nos.11204360,61210014,and 61078046)+2 种基金the Science and Technology Innovation Program of Department of Education of Guangdong Province,China (Grant No.2012CXZD0017)the Industry–Academia Research Union Special Fund of Guangdong Province,China (Grant No.2012B091000169)the Science and Technology Innovation Platform of Industry–Academia Research Union of Guangdong Province–Ministry Cooperation Special Fund,China (Grant No.2012B090600038)
文摘We use a simple and controllable method to fabricate GaN-based light-emitting diodes(LEDs) with 22?undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching(ICP-RIE).Our experiment results show that the output powers of the LEDs with 22?undercut sidewalls are 34.8 mW under a 20-mA current injection,6.75% higher than 32.6 mW,the output powers of the conventional LEDs under the same current injection.
