Y2002-63084-205 0212515利用电子回旋加速器谐振氢化技术钝化硅晶格缺陷=Passivadon of lattice defects in silicon by electron cy-clotron resonance hydrogenation technique[会,英]/Keshmiri,S.H.//ICM 2000 Proceedings of
Y2002-63306-307 0307243多硅片 AIX2400G3行星反应器中生长长波长 InP 基材料=InP based materials for long wavelength optoelec-tronics grown in a multiwafer AIX 2400 G3 planetary re-actor[会,英]/Schmitt,T.& Deufel,M.//...Y2002-63306-307 0307243多硅片 AIX2400G3行星反应器中生长长波长 InP 基材料=InP based materials for long wavelength optoelec-tronics grown in a multiwafer AIX 2400 G3 planetary re-actor[会,英]/Schmitt,T.& Deufel,M.//2001 IEEEInternational Conference on Indium Phosphide and Relat-ed Materials.—307~309(E)展开更多
文摘Y2002-63084-205 0212515利用电子回旋加速器谐振氢化技术钝化硅晶格缺陷=Passivadon of lattice defects in silicon by electron cy-clotron resonance hydrogenation technique[会,英]/Keshmiri,S.H.//ICM 2000 Proceedings of
文摘Y2002-63306-307 0307243多硅片 AIX2400G3行星反应器中生长长波长 InP 基材料=InP based materials for long wavelength optoelec-tronics grown in a multiwafer AIX 2400 G3 planetary re-actor[会,英]/Schmitt,T.& Deufel,M.//2001 IEEEInternational Conference on Indium Phosphide and Relat-ed Materials.—307~309(E)