Particle image velocimetry technique was used to analyze the trailing vortices and elucidate their rela-tionship with turbulence properties in a stirred tank of 0.48 m diameter,agitated by four different disc turbines...Particle image velocimetry technique was used to analyze the trailing vortices and elucidate their rela-tionship with turbulence properties in a stirred tank of 0.48 m diameter,agitated by four different disc turbines,in-cluding Rushton turbine,concaved blade disk turbine,half elliptical blade disk turbine,and parabolic blade disk turbine.Phase-averaged and phase-resolved flow fields near the impeller blades were measured and the structure of trailing vortices was studied in detail.The location,size and strength of vortices were determined by the simplified λ2-criterion and the results showed that the blade shape had great effect on the trailing vortex characteristics.The larger curvature resulted in longer residence time of the vortex at the impeller tip,bigger distance between the upper and lower vortices and longer vortex life,also leads to smaller and stronger vortices.In addition,the turbulent ki-netic energy and turbulent energy dissipation in the discharge flow were determined and discussed.High turbulent kinetic energy and turbulent energy dissipation regions were located between the upper and lower vortices and moved along with them.Although restricted to single phase flow,the presented results are essential for reliable de-sign and scale-up of stirred tank with disc turbines.展开更多
The broad availability of high throughput nanostructure fabrication is essential for advancement in nanoscale science. Large-scale manufacturing developed by the semiconductor industry is often too resource-intensive ...The broad availability of high throughput nanostructure fabrication is essential for advancement in nanoscale science. Large-scale manufacturing developed by the semiconductor industry is often too resource-intensive for medium scale laboratory prototyping. We demonstrate the inexpensive wafer scale direct- write of Ge and Si nanostructures with a 4-inch mask aligner retrofitted with a conducting microstructured stamp. A bias applied between the stamp and an underlying silicon substrate results in the reaction of diphenylgermane and diphenylsilane precursors at the stamp--substrate interface to yield the direct- write of Ge and Si nanostructures in determined locations. With the increasing number of outdated mask aligners available from the semiconductor industry and an extensive library of liquid precursors, this strategy provides facile, inexpensive, wafer scale semiconductor direct-write for applications such as electronics, photonics, and photovoltaics.展开更多
基金Supported by the National Natural Science Foundation of China（20776008 20821004 20990224） the National Basic Research Program of China（2007CB714300）
文摘Particle image velocimetry technique was used to analyze the trailing vortices and elucidate their rela-tionship with turbulence properties in a stirred tank of 0.48 m diameter,agitated by four different disc turbines,in-cluding Rushton turbine,concaved blade disk turbine,half elliptical blade disk turbine,and parabolic blade disk turbine.Phase-averaged and phase-resolved flow fields near the impeller blades were measured and the structure of trailing vortices was studied in detail.The location,size and strength of vortices were determined by the simplified λ2-criterion and the results showed that the blade shape had great effect on the trailing vortex characteristics.The larger curvature resulted in longer residence time of the vortex at the impeller tip,bigger distance between the upper and lower vortices and longer vortex life,also leads to smaller and stronger vortices.In addition,the turbulent ki-netic energy and turbulent energy dissipation in the discharge flow were determined and discussed.High turbulent kinetic energy and turbulent energy dissipation regions were located between the upper and lower vortices and moved along with them.Although restricted to single phase flow,the presented results are essential for reliable de-sign and scale-up of stirred tank with disc turbines.
文摘The broad availability of high throughput nanostructure fabrication is essential for advancement in nanoscale science. Large-scale manufacturing developed by the semiconductor industry is often too resource-intensive for medium scale laboratory prototyping. We demonstrate the inexpensive wafer scale direct- write of Ge and Si nanostructures with a 4-inch mask aligner retrofitted with a conducting microstructured stamp. A bias applied between the stamp and an underlying silicon substrate results in the reaction of diphenylgermane and diphenylsilane precursors at the stamp--substrate interface to yield the direct- write of Ge and Si nanostructures in determined locations. With the increasing number of outdated mask aligners available from the semiconductor industry and an extensive library of liquid precursors, this strategy provides facile, inexpensive, wafer scale semiconductor direct-write for applications such as electronics, photonics, and photovoltaics.
