O482.31 95032051MOCVD的InGaAs/GaAs应变层量子阱的低温光致发光研究=Studies on low temperature photo-lumineseence spectra of InGaAs/GaAs stra-ined quantum wells by MOCVD[刊,中]/王小军,王启明,庄婉如,郑婉华(中科院半导体所...O482.31 95032051MOCVD的InGaAs/GaAs应变层量子阱的低温光致发光研究=Studies on low temperature photo-lumineseence spectra of InGaAs/GaAs stra-ined quantum wells by MOCVD[刊,中]/王小军,王启明,庄婉如,郑婉华(中科院半导体所集成光电子学国家重点联合实验室.北京(100083))。展开更多
O482.31 95010619空间限制与应变对发光多孔硅喇曼光谱的影响=Effect of phonon confinement and strain onRaman spectra from light emitting poroussilicon[刊,中]/杨敏,黄大鸣,郝平海,张甫龙,侯晓远（复旦大学应用表面物理国家重点...O482.31 95010619空间限制与应变对发光多孔硅喇曼光谱的影响=Effect of phonon confinement and strain onRaman spectra from light emitting poroussilicon[刊,中]/杨敏,黄大鸣,郝平海,张甫龙,侯晓远（复旦大学应用表面物理国家重点实验室）//物理学报.—1994,43（3）.—494—498发光多孔硅的喇曼光谱在520cm<sup>-1</sup>附近呈现一锐峰,峰位的红移随多孔度的增大而增大。采用微晶模型拟合喇曼谱的线形,发现除了光学声子的空间限制效应,硅单晶的应变对峰位的移动也有显著贡献。通过谱形的拟合估算了硅微粒的应变。展开更多
O482.31 98010638蓝光发射和红光发射多孔硅的XPS分析=XPS investigationon blue and red emitting poroussilicon[刊,中]/郭常新,张学兵（中国科技大学物理系.安徽,合肥（230026））,李碧琳（中国科技大学结构成份开放研究实验室.安徽...O482.31 98010638蓝光发射和红光发射多孔硅的XPS分析=XPS investigationon blue and red emitting poroussilicon[刊,中]/郭常新,张学兵（中国科技大学物理系.安徽,合肥（230026））,李碧琳（中国科技大学结构成份开放研究实验室.安徽,合肥（230026））//发光学报.—1997,18（2）.—127—132利用X光光电子谱和红外透射光谱,以及光致发光来研究氧化多孔硅的发光机理。绿色发光多孔硅在空气中经两种不同的氧化处理分别得到红色发光和蓝色发光,分析表明多孔硅中的蓝光发射来源于SiO<sub>2</sub>展开更多
O482.31 95063975铕(Eu)配合物的结构与发光=Structure and luminescenceof Eu compound[刊,中]/金林培(北京师范大学化学系.北京(100875))//光电子技术与信息.—1994,(5).—63合成了一系列Eu—β—二酮混配合物和铕—芳香酸混配合物,...O482.31 95063975铕(Eu)配合物的结构与发光=Structure and luminescenceof Eu compound[刊,中]/金林培(北京师范大学化学系.北京(100875))//光电子技术与信息.—1994,(5).—63合成了一系列Eu—β—二酮混配合物和铕—芳香酸混配合物,培养了它们的单晶体,测定了配合物的晶体结构和激光诱导高分辨光谱。展开更多
The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to ...The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.展开更多
Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is sh...Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is shown that for porous silicon made from p type silicon,there is a universal relationship,it is possible to determine the change in porosity with respect to etching under a set etching current density.This relationship is checked against experimental data from several reports on these etching parameters,and they confirm the validity.展开更多
Porous silicon samples are made on Si wafers with different resistivities under different anod ic-react ion conditions. Visible photoluminescent spectra of porous silicon (PS) at room temperature are measured using a ...Porous silicon samples are made on Si wafers with different resistivities under different anod ic-react ion conditions. Visible photoluminescent spectra of porous silicon (PS) at room temperature are measured using a fluorescent spectrograph where blue-violet light is observed. The decision of the resistivity of Si substrates is provided.展开更多
O472/TN304.055 96042716SnO<sub>2</sub>;Pd/Si新气敏特性的研究=Study of the newgas-sensibility of SnO<sub>2</sub>:Pd/Si to reducinggases[刊,中]/沈凯华,吴孙桃,许淑恋（厦门大学物理学系）,朱文章（...O472/TN304.055 96042716SnO<sub>2</sub>;Pd/Si新气敏特性的研究=Study of the newgas-sensibility of SnO<sub>2</sub>:Pd/Si to reducinggases[刊,中]/沈凯华,吴孙桃,许淑恋（厦门大学物理学系）,朱文章（集美航海学院物理教研室）∥厦门大学学报.自然科学版.—1996,35（2）.展开更多
ZnS films were deposited on porous Si(PS) substrates with different porosities by pulsed laser deposition. The photolumi-nescence spectra of the samples were measured to study the effect of substrate porosity on lumin...ZnS films were deposited on porous Si(PS) substrates with different porosities by pulsed laser deposition. The photolumi-nescence spectra of the samples were measured to study the effect of substrate porosity on luminescence properties of ZnS/porous Si composites. After deposition of ZnS films,the red photoluminescence peak of porous Si shows a slight blueshift compared with as-prepared porous Si samples. With an increase of the porosity,a green emission at about 550 nm was observed which may be ascribed to the defect-center luminescence of ZnS films,and the photoluminescence of ZnS/porous Si composites is very close to white light. Good crystal structures of the samples were observed by x-ray diffraction,showing that ZnS films were grown in preferred orientation. Due to the roughness of porous Si surface,some cracks appear in ZnS films,which could be seen from scanning electron microscope images.展开更多
文摘O482.31 95032051MOCVD的InGaAs/GaAs应变层量子阱的低温光致发光研究=Studies on low temperature photo-lumineseence spectra of InGaAs/GaAs stra-ined quantum wells by MOCVD[刊,中]/王小军,王启明,庄婉如,郑婉华(中科院半导体所集成光电子学国家重点联合实验室.北京(100083))。
文摘O482.31 95010619空间限制与应变对发光多孔硅喇曼光谱的影响=Effect of phonon confinement and strain onRaman spectra from light emitting poroussilicon[刊,中]/杨敏,黄大鸣,郝平海,张甫龙,侯晓远（复旦大学应用表面物理国家重点实验室）//物理学报.—1994,43（3）.—494—498发光多孔硅的喇曼光谱在520cm<sup>-1</sup>附近呈现一锐峰,峰位的红移随多孔度的增大而增大。采用微晶模型拟合喇曼谱的线形,发现除了光学声子的空间限制效应,硅单晶的应变对峰位的移动也有显著贡献。通过谱形的拟合估算了硅微粒的应变。
文摘O482.31 98010638蓝光发射和红光发射多孔硅的XPS分析=XPS investigationon blue and red emitting poroussilicon[刊,中]/郭常新,张学兵（中国科技大学物理系.安徽,合肥（230026））,李碧琳（中国科技大学结构成份开放研究实验室.安徽,合肥（230026））//发光学报.—1997,18（2）.—127—132利用X光光电子谱和红外透射光谱,以及光致发光来研究氧化多孔硅的发光机理。绿色发光多孔硅在空气中经两种不同的氧化处理分别得到红色发光和蓝色发光,分析表明多孔硅中的蓝光发射来源于SiO<sub>2</sub>
文摘O482.31 95063975铕(Eu)配合物的结构与发光=Structure and luminescenceof Eu compound[刊,中]/金林培(北京师范大学化学系.北京(100875))//光电子技术与信息.—1994,(5).—63合成了一系列Eu—β—二酮混配合物和铕—芳香酸混配合物,培养了它们的单晶体,测定了配合物的晶体结构和激光诱导高分辨光谱。
文摘The electrochemical deposition technique was applied to achieve porous silicon （PS） surface passivated with Ag deposition for improving the properties of PS photoluminescence. The relation of Ag depositing forms to current density and the effect of PS hydrophilic surface on deposition uniformity were investigated. The experimental results indicated that there were two critical current densities （maximum and minimum） in which Ag was absent and electroplated on PS surface correspondingly, and the range of current density for deposition of Ag on porous silicon was from 50 μA/cm^2 to 400 μA/cm^2. The process of changing PS surface from hydrophobic into hydrophilic had positive effect on Ag deposition uniformity. Under the same experimental conditions, PS hydrophobic surface presented uneven Ag deposition.However, hydrophilic surface treated with SC-1 solution was even. Finally, the effect of PS surface passivation with Ag even deposition on photoluminescence intensity and stabilization of PS was studied. It was discovered that Ag passivation inhibited the degradation of PL intensity effectively. In addition, excessive Ag deposition had a quenching effect on room-temperature visible photoluminescence of PS.
文摘Through the studying of the carriers moving of the porous and the definition of S BET ,the equation of the relationship among the porosity,the current density and the etching speed can be deduced.Here,it is shown that for porous silicon made from p type silicon,there is a universal relationship,it is possible to determine the change in porosity with respect to etching under a set etching current density.This relationship is checked against experimental data from several reports on these etching parameters,and they confirm the validity.
文摘Porous silicon samples are made on Si wafers with different resistivities under different anod ic-react ion conditions. Visible photoluminescent spectra of porous silicon (PS) at room temperature are measured using a fluorescent spectrograph where blue-violet light is observed. The decision of the resistivity of Si substrates is provided.
文摘O472/TN304.055 96042716SnO<sub>2</sub>;Pd/Si新气敏特性的研究=Study of the newgas-sensibility of SnO<sub>2</sub>:Pd/Si to reducinggases[刊,中]/沈凯华,吴孙桃,许淑恋（厦门大学物理学系）,朱文章（集美航海学院物理教研室）∥厦门大学学报.自然科学版.—1996,35（2）.
基金This work was supported by the Natural Science Foundation ofShandong Province (Grant No.Y2002A09)
文摘ZnS films were deposited on porous Si(PS) substrates with different porosities by pulsed laser deposition. The photolumi-nescence spectra of the samples were measured to study the effect of substrate porosity on luminescence properties of ZnS/porous Si composites. After deposition of ZnS films,the red photoluminescence peak of porous Si shows a slight blueshift compared with as-prepared porous Si samples. With an increase of the porosity,a green emission at about 550 nm was observed which may be ascribed to the defect-center luminescence of ZnS films,and the photoluminescence of ZnS/porous Si composites is very close to white light. Good crystal structures of the samples were observed by x-ray diffraction,showing that ZnS films were grown in preferred orientation. Due to the roughness of porous Si surface,some cracks appear in ZnS films,which could be seen from scanning electron microscope images.
