Although Cu2ZnSn(Sx,Se1-x)4(CZTSSe)is a promising candidate for thin-film photovoltaics,its cell performance is currently limited by the large voltage loss.Although a series of studies on the efficiency loss mechanism...Although Cu2ZnSn(Sx,Se1-x)4(CZTSSe)is a promising candidate for thin-film photovoltaics,its cell performance is currently limited by the large voltage loss.Although a series of studies on the efficiency loss mechanism of CZTSSe solar cell have been carried out in the past few years,no convincing understanding has been obtained until now.In this review,the current findings regarding the underlying mechanism of the efficiency loss in CZTSSe solar cells are systematically summarized and analyzed.The properties of atomic disorder and deep defects in CZTSSe materials and their effects on device performance are discussed.The synergistic effect is proposed to help understand the defect-related charge loss in the absorber.Furthermore,the experimental methods of defect identification and defect control are presented,in an attempt to identify the killer defects that can be responsible for the ultra-short minority lifetime of CZTSSe material.By comprehensively and dialectically understanding these defect properties of the CZTSSe solar cell,we believe breakthrough in the cell efficiency will come soon with our concentrated effort.展开更多
基金supported in part by the General Research Fund CUHK417807 and CUHK418708 from Hong Kong SAR Research Grants Council(RGC)by National Science Foundation of China(NSFC) under grant No.60876029a grant N CUHK417/08 from the NSFC/RGC Joint Research Scheme
基金supported by the National Natural Science Foundation of China(51961165108,51421002,51972332 and 51627803)。
文摘Although Cu2ZnSn(Sx,Se1-x)4(CZTSSe)is a promising candidate for thin-film photovoltaics,its cell performance is currently limited by the large voltage loss.Although a series of studies on the efficiency loss mechanism of CZTSSe solar cell have been carried out in the past few years,no convincing understanding has been obtained until now.In this review,the current findings regarding the underlying mechanism of the efficiency loss in CZTSSe solar cells are systematically summarized and analyzed.The properties of atomic disorder and deep defects in CZTSSe materials and their effects on device performance are discussed.The synergistic effect is proposed to help understand the defect-related charge loss in the absorber.Furthermore,the experimental methods of defect identification and defect control are presented,in an attempt to identify the killer defects that can be responsible for the ultra-short minority lifetime of CZTSSe material.By comprehensively and dialectically understanding these defect properties of the CZTSSe solar cell,we believe breakthrough in the cell efficiency will come soon with our concentrated effort.
