本文研究了0.8μm SOI NMOS晶体管,经剂量率为50rad(Si)/s的60Coγ射线辐照之后的总剂量效应,分析了器件在不同辐照条件和测量偏置下的辐照响应特性.研究结果表明:器件辐照时的栅偏置电压越高,辐照后栅氧化层中积累的空穴陷阱电荷越多,...本文研究了0.8μm SOI NMOS晶体管,经剂量率为50rad(Si)/s的60Coγ射线辐照之后的总剂量效应,分析了器件在不同辐照条件和测量偏置下的辐照响应特性.研究结果表明:器件辐照时的栅偏置电压越高,辐照后栅氧化层中积累的空穴陷阱电荷越多,引起的漏极泄漏电流越大.对于漏偏置为5V的器件,当栅电压大于阈值电压时,前栅ID-VG特性曲线中的漏极电流因碰撞电离而突然增大,体电极的电流曲线呈现倒立的钟形.展开更多
本文对PD SOI NMOS器件进行了60Coγ射线总剂量辐照的实验测试,分析了不同的栅长对器件辐射效应的影响及其物理机理.研究结果表明,短沟道器件辐照后感生的界面态密度更大,使器件跨导出现退化.PD SOI器件的局部浮体效应是造成不同栅长器...本文对PD SOI NMOS器件进行了60Coγ射线总剂量辐照的实验测试,分析了不同的栅长对器件辐射效应的影响及其物理机理.研究结果表明,短沟道器件辐照后感生的界面态密度更大,使器件跨导出现退化.PD SOI器件的局部浮体效应是造成不同栅长器件辐照后输出特性变化不一致的主要原因.短沟道器件输出特性的击穿电压更低.在关态偏置条件下,由于背栅晶体管更严重的辐射效应,短沟道SOI器件的电离辐射效应比同样偏置条件下长沟道器件严重.展开更多
Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied.The results show that the manifestations of damage caused by these two effects are quite different,though the principles of damage f...Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied.The results show that the manifestations of damage caused by these two effects are quite different,though the principles of damage formation are somewhat similar.For the total dose irradiation effect,the most notable damage lies in the great increase of the off-state leakage current.As to the hot-carrier effect,most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance.It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation,while the negative charges generated in the gate oxide,as well as the interface-trapped charges at the gate interface,cause the degradation of the hot-carrier effect.Different aspects should be considered when the device is generally hardened against these two effects.展开更多
This paper presents the total ionizing dose test results at different biases and dose rates for AD9233,which is fabricated using a modern CMOS process. The experimental results show that the digital parts are more sen...This paper presents the total ionizing dose test results at different biases and dose rates for AD9233,which is fabricated using a modern CMOS process. The experimental results show that the digital parts are more sensitive than the other parts. Power down is the worst-case bias, and this phenomenon is first found in the total ionizing dose effect of analog-to-digital converters. We also find that the AC as well as DC parameters are sensitive to the total ionizing dose at a high dose rate, whereas none of the parameters are sensitive at a low dose rate. The test facilities, results and analysis are presented in detail.展开更多
文摘本文研究了0.8μm SOI NMOS晶体管,经剂量率为50rad(Si)/s的60Coγ射线辐照之后的总剂量效应,分析了器件在不同辐照条件和测量偏置下的辐照响应特性.研究结果表明:器件辐照时的栅偏置电压越高,辐照后栅氧化层中积累的空穴陷阱电荷越多,引起的漏极泄漏电流越大.对于漏偏置为5V的器件,当栅电压大于阈值电压时,前栅ID-VG特性曲线中的漏极电流因碰撞电离而突然增大,体电极的电流曲线呈现倒立的钟形.
文摘本文对PD SOI NMOS器件进行了60Coγ射线总剂量辐照的实验测试,分析了不同的栅长对器件辐射效应的影响及其物理机理.研究结果表明,短沟道器件辐照后感生的界面态密度更大,使器件跨导出现退化.PD SOI器件的局部浮体效应是造成不同栅长器件辐照后输出特性变化不一致的主要原因.短沟道器件输出特性的击穿电压更低.在关态偏置条件下,由于背栅晶体管更严重的辐射效应,短沟道SOI器件的电离辐射效应比同样偏置条件下长沟道器件严重.
文摘Total dose irradiation and the hot-carrier effects of sub-micro NMOSFETs are studied.The results show that the manifestations of damage caused by these two effects are quite different,though the principles of damage formation are somewhat similar.For the total dose irradiation effect,the most notable damage lies in the great increase of the off-state leakage current.As to the hot-carrier effect,most changes come from the decrease of the output characteristics curves as well as the decrease of trans-conductance.It is considered that the oxide-trapped and interface-trapped charges related to STI increase the current during irradiation,while the negative charges generated in the gate oxide,as well as the interface-trapped charges at the gate interface,cause the degradation of the hot-carrier effect.Different aspects should be considered when the device is generally hardened against these two effects.
基金supported by the National Natural Science Foundation of China(No.11005152)
文摘This paper presents the total ionizing dose test results at different biases and dose rates for AD9233,which is fabricated using a modern CMOS process. The experimental results show that the digital parts are more sensitive than the other parts. Power down is the worst-case bias, and this phenomenon is first found in the total ionizing dose effect of analog-to-digital converters. We also find that the AC as well as DC parameters are sensitive to the total ionizing dose at a high dose rate, whereas none of the parameters are sensitive at a low dose rate. The test facilities, results and analysis are presented in detail.
