设计了一种In P基的背入射台面结构的单行载流子光探测器.通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层,使得光探测器同时具备了高速和高饱和电流特性.理论分析表明,在光敏面为14μm2、反向偏压为2 V条件下,该器件...设计了一种In P基的背入射台面结构的单行载流子光探测器.通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层,使得光探测器同时具备了高速和高饱和电流特性.理论分析表明,在光敏面为14μm2、反向偏压为2 V条件下,该器件的3 d B带宽可达58 GHz,直流饱和电流高达158 m A.在大功率光注入条件下,详细分析了光探测器带宽降低和电流饱和现象,得出能带偏移和电场坍塌是其根本原因的结论.展开更多
This paper proposes a novel modified uni-traveling-carrier photodiode(MUTC-PD)featuring an electric field regulation layer:a p-type doped thin layer inserted behind the PD’s n-doped cliff layer.This electric field re...This paper proposes a novel modified uni-traveling-carrier photodiode(MUTC-PD)featuring an electric field regulation layer:a p-type doped thin layer inserted behind the PD’s n-doped cliff layer.This electric field regulation layer enhances the PD’s performance by not only reducing and smoothing the electric field intensity in the collector layer,allowing photo-generated electrons to transit at peak drift velocity,but also improving the electric field intensity in the depleted absorber layer and optimizing the photo-generated carriers’saturated transit performance.Additionally,the transport characteristics of the peak drift velocity of photogenerated electrons in the device’s collection layer can be used to optimize its parasitic characteristics.The electron’s peak drift velocity compensates for the lost transit time.Thus improving the 3 dB bandwidth of the PD’s photo response.Finally obtains a MUTC-PD with a 3 dB bandwidth of 68 GHz at a responsivity of 0.502 A/W,making it suitable for 100 Gbit/s optical receivers.展开更多
基金The Joint Laboratory of Quantum Optoelectronics and the Theory of Bivergentum and Beijing International Scientific and Technological Cooperation Base of Information Optoelectronics and Nanoheterogeneous Structure,the National Natural and Science Foundation of China(Nos.61574019,61674018,61674020)the Fund of the State Key Laboratory of Information Photonics and Optical Communications,the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20130005130001)
文摘设计了一种In P基的背入射台面结构的单行载流子光探测器.通过在吸收层中采取高斯型掺杂界面及引入合适厚度和掺杂浓度的崖层,使得光探测器同时具备了高速和高饱和电流特性.理论分析表明,在光敏面为14μm2、反向偏压为2 V条件下,该器件的3 d B带宽可达58 GHz,直流饱和电流高达158 m A.在大功率光注入条件下,详细分析了光探测器带宽降低和电流饱和现象,得出能带偏移和电场坍塌是其根本原因的结论.
文摘This paper proposes a novel modified uni-traveling-carrier photodiode(MUTC-PD)featuring an electric field regulation layer:a p-type doped thin layer inserted behind the PD’s n-doped cliff layer.This electric field regulation layer enhances the PD’s performance by not only reducing and smoothing the electric field intensity in the collector layer,allowing photo-generated electrons to transit at peak drift velocity,but also improving the electric field intensity in the depleted absorber layer and optimizing the photo-generated carriers’saturated transit performance.Additionally,the transport characteristics of the peak drift velocity of photogenerated electrons in the device’s collection layer can be used to optimize its parasitic characteristics.The electron’s peak drift velocity compensates for the lost transit time.Thus improving the 3 dB bandwidth of the PD’s photo response.Finally obtains a MUTC-PD with a 3 dB bandwidth of 68 GHz at a responsivity of 0.502 A/W,making it suitable for 100 Gbit/s optical receivers.
